JP5449397B2 - ワイヤーソー切断法 - Google Patents

ワイヤーソー切断法 Download PDF

Info

Publication number
JP5449397B2
JP5449397B2 JP2011542532A JP2011542532A JP5449397B2 JP 5449397 B2 JP5449397 B2 JP 5449397B2 JP 2011542532 A JP2011542532 A JP 2011542532A JP 2011542532 A JP2011542532 A JP 2011542532A JP 5449397 B2 JP5449397 B2 JP 5449397B2
Authority
JP
Japan
Prior art keywords
cutting fluid
cutting
wire saw
chemical
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011542532A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012512758A (ja
Inventor
グラムバイン スティーブン
ナギブ ネビン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2012512758A publication Critical patent/JP2012512758A/ja
Application granted granted Critical
Publication of JP5449397B2 publication Critical patent/JP5449397B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007—Use, recovery or regeneration of abrasive mediums
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Lubricants (AREA)
JP2011542532A 2008-12-20 2009-12-21 ワイヤーソー切断法 Expired - Fee Related JP5449397B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20314208P 2008-12-20 2008-12-20
US61/203,142 2008-12-20
PCT/US2009/068926 WO2010071873A2 (en) 2008-12-20 2009-12-21 Wiresaw cutting method

Publications (2)

Publication Number Publication Date
JP2012512758A JP2012512758A (ja) 2012-06-07
JP5449397B2 true JP5449397B2 (ja) 2014-03-19

Family

ID=42269294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542532A Expired - Fee Related JP5449397B2 (ja) 2008-12-20 2009-12-21 ワイヤーソー切断法

Country Status (10)

Country Link
US (1) US8960177B2 (ko)
EP (1) EP2377147A2 (ko)
JP (1) JP5449397B2 (ko)
KR (1) KR101428152B1 (ko)
CN (1) CN102257604B (ko)
IL (1) IL213229A (ko)
MY (1) MY153330A (ko)
SG (1) SG172286A1 (ko)
TW (1) TWI378836B (ko)
WO (1) WO2010071873A2 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5464055B2 (ja) * 2009-06-02 2014-04-09 日信化学工業株式会社 水性切削液及び水性切削剤
JP5640260B2 (ja) * 2010-06-25 2014-12-17 日本碍子株式会社 クーラント回収方法
GB2484348A (en) * 2010-10-08 2012-04-11 Rec Wafer Norway As Abrasive slurry and method of production of photovoltaic wafers
CN102694058A (zh) * 2011-03-23 2012-09-26 镇江荣德新能源科技有限公司 配制太阳电池硅片切割砂浆的设备
CN102189611B (zh) * 2011-04-15 2013-11-27 浙江德圣龙新材料科技有限公司 用于太阳能硅片线切割的等密度砂浆切割方法
CN102241083A (zh) * 2011-07-12 2011-11-16 浙江德圣龙新材料科技有限公司 用于太阳能硅片线切割的等粘度砂浆切割方法及装置
US20130144421A1 (en) * 2011-12-01 2013-06-06 Memc Electronic Materials, Spa Systems For Controlling Temperature Of Bearings In A Wire Saw
CN102744796A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 硅锭切片质量监控系统及监测方法
CN203712895U (zh) * 2013-10-30 2014-07-16 章博 一种多线切割机的钢线清洗装置
CN103707425B (zh) * 2013-12-12 2016-07-06 灵璧县灵磁新材料有限公司 一种多线性磁石切割机
CN104290206A (zh) * 2014-09-18 2015-01-21 苏州市汇峰机械设备有限公司 一种线切割机砂浆装置
JP6174545B2 (ja) * 2014-10-17 2017-08-02 ファナック株式会社 臭気センサを用いた切削液の状態監視装置
EP3015238A1 (en) * 2014-10-29 2016-05-04 Applied Materials Switzerland Sàrl Wire monitoring system
EP3015237A1 (en) * 2014-10-29 2016-05-04 Applied Materials Switzerland Sàrl Wire monitoring system
JP6432453B2 (ja) * 2015-06-23 2018-12-05 株式会社Sumco ワイヤーソー装置およびワークの切断方法
KR20220150315A (ko) 2016-09-08 2022-11-10 트랜스포드 인코포레이티드 플라즈마기반의 고속출력 변속시스템
FR3070538B1 (fr) * 2017-08-30 2020-02-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de desassemblage d'un module photovoltaique et installation associee
CN110561631A (zh) * 2018-06-06 2019-12-13 隆基绿能科技股份有限公司 切割液供给装置及方法
US20200047299A1 (en) * 2018-08-07 2020-02-13 Illinois Tool Works Inc. Coolant recapture and recirculation in material removal systems
CN112428463B (zh) * 2020-11-19 2022-01-07 上海中欣晶圆半导体科技有限公司 一种晶棒线切割加工过程中断线复旧的方法
CN114407214A (zh) * 2022-01-28 2022-04-29 广东高景太阳能科技有限公司 一种大尺寸硅片切割砂浆液浓度自动调节系统
CN115625809A (zh) * 2022-10-31 2023-01-20 浙江富芯微电子科技有限公司 一种晶棒切割系统

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB613810I5 (ko) * 1959-02-11
US3618707A (en) * 1970-06-16 1971-11-09 Metal Chemicals Inc Method of lubricating machine tools
GB8826857D0 (en) * 1988-11-17 1988-12-21 Bp Chem Int Ltd Water based functional fluids
JP3194860B2 (ja) * 1994-11-21 2001-08-06 信越半導体株式会社 スラリー粘度調整装置
JP3222784B2 (ja) * 1995-10-04 2001-10-29 株式会社日平トヤマ ワイヤソーのスラリー管理システム
MY138664A (en) * 1995-10-04 2009-07-31 Komatsu Ntc Ltd Slurry managing system and slurry managing for wire saws
JP3249373B2 (ja) * 1996-02-21 2002-01-21 信越半導体株式会社 水溶性スラリー廃液の再利用システム
TW330884B (en) * 1996-03-26 1998-05-01 Shinetsu Handotai Co Ltd Wire saw and method of slicing a cylindrical workpiece
JP3647607B2 (ja) * 1997-06-20 2005-05-18 株式会社日平トヤマ スラリ循環装置及びワイヤソー
JP3982719B2 (ja) * 1997-07-24 2007-09-26 石川島汎用機サービス株式会社 ワイヤソーの砥粒循環装置
JPH1158236A (ja) * 1997-08-20 1999-03-02 Nippei Toyama Corp スラリ循環装置及びそれを用いたワイヤソー
JPH11114825A (ja) * 1997-10-15 1999-04-27 Yushiro Chem Ind Co Ltd 水分を含む切削液の水分調整装置及び切削液再利用システム
US6045434A (en) * 1997-11-10 2000-04-04 International Business Machines Corporation Method and apparatus of monitoring polishing pad wear during processing
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP4212155B2 (ja) * 1998-08-20 2009-01-21 株式会社スーパーシリコン研究所 ワイヤソー用スラリータンク
JP2000141362A (ja) * 1998-11-11 2000-05-23 Tokyo Seimitsu Co Ltd ワイヤソーの加工液交換制御装置
JP2000218492A (ja) * 1999-01-28 2000-08-08 Tokyo Seimitsu Co Ltd ワイヤソーの異常伝達システム
US6048256A (en) * 1999-04-06 2000-04-11 Lucent Technologies Inc. Apparatus and method for continuous delivery and conditioning of a polishing slurry
JP3389141B2 (ja) * 1999-04-26 2003-03-24 株式会社スーパーシリコン研究所 スライシング用スラリーの評価方法及びスラリー
JP2002117532A (ja) * 2000-10-11 2002-04-19 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
DE10122628B4 (de) * 2001-05-10 2007-10-11 Siltronic Ag Verfahren zum Abtrennen von Scheiben von einem Werkstück
US6709311B2 (en) * 2001-08-13 2004-03-23 Particle Measuring Systems, Inc. Spectroscopic measurement of the chemical constituents of a CMP slurry
JP3950391B2 (ja) 2002-08-26 2007-08-01 石川島汎用機サービス株式会社 ワイヤソーのスラリー管理装置
CA2519942A1 (en) * 2003-03-25 2004-10-14 Neopad Technologies Corporation Chip customized polish pads for chemical mechanical planarization (cmp)
JP4311247B2 (ja) * 2004-03-19 2009-08-12 日立電線株式会社 研磨用砥粒、研磨剤、研磨液の製造方法
JP4493454B2 (ja) * 2004-09-22 2010-06-30 株式会社カサタニ シリコン加工用水溶性切削剤組成物及び加工方法
US8007348B2 (en) * 2005-06-27 2011-08-30 Husqvarna Professional Outdoor Products Inc. Tools and methods for making and using tools, blades and methods of making and using blades, and machines for working on work pieces
DE102005040343A1 (de) * 2005-08-25 2007-03-01 Freiberger Compound Materials Gmbh Verfahren, Vorrichtung und Slurry zum Drahtsägen
US20110017230A1 (en) * 2009-07-27 2011-01-27 Memc Electronic Materials, Inc. Method and System for Processing Abrasive Slurry
WO2011024486A1 (ja) * 2009-08-31 2011-03-03 三洋化成工業株式会社 シリコンインゴットスライス用水溶性切削液

Also Published As

Publication number Publication date
IL213229A0 (en) 2011-07-31
KR20110099135A (ko) 2011-09-06
CN102257604A (zh) 2011-11-23
US20110303210A1 (en) 2011-12-15
TW201032924A (en) 2010-09-16
SG172286A1 (en) 2011-07-28
IL213229A (en) 2015-04-30
EP2377147A2 (en) 2011-10-19
WO2010071873A3 (en) 2010-09-10
TWI378836B (en) 2012-12-11
KR101428152B1 (ko) 2014-08-08
JP2012512758A (ja) 2012-06-07
WO2010071873A2 (en) 2010-06-24
US8960177B2 (en) 2015-02-24
MY153330A (en) 2015-01-29
CN102257604B (zh) 2013-07-03

Similar Documents

Publication Publication Date Title
JP5449397B2 (ja) ワイヤーソー切断法
JP4022569B1 (ja) ウエハ製造方法
TWI443004B (zh) 用於在線割鋸過程中冷卻由半導體材料製成的工件的方法
US20110240002A1 (en) Cutting fluid composition for wiresawing
WO2011043177A1 (ja) ワイヤーソーによるシリコンインゴットの切断方法およびワイヤーソー
KR20140018265A (ko) 고정 지립 와이어소용 수용성 가공액
JP2015536379A (ja) 水溶性切削流体組成物
EP2966156A1 (en) Aqueous working fluid
US20130174828A1 (en) Systems and Methods For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw
EP2621699B1 (en) Sawing apparatus of single crystal ingot
AU2011287623B9 (en) Carrier fluids for abrasives
US8597538B2 (en) Composition for improving dryness during wire sawing
JP2011014561A (ja) シリコンインゴットの切断方法
JP2008103690A (ja) シリコンインゴット切断用スラリー
JP2000296455A (ja) 固定砥粒マルチワイヤソー
KR20120056196A (ko) 웨이퍼 절삭용 환경 친화적 수용성 절삭유 및 이를 포함한 수용성 웨이퍼 절삭액 조성물
JP5750525B2 (ja) 固定砥粒ワイヤソー用水溶性加工液
JP2016132081A (ja) ワイヤソーにおけるワークの切削方法及びワイヤソー

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130604

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130903

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130910

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131224

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees