JP5438114B2 - 材料ボンディングのための方法およびシステム - Google Patents
材料ボンディングのための方法およびシステム Download PDFInfo
- Publication number
- JP5438114B2 JP5438114B2 JP2011527336A JP2011527336A JP5438114B2 JP 5438114 B2 JP5438114 B2 JP 5438114B2 JP 2011527336 A JP2011527336 A JP 2011527336A JP 2011527336 A JP2011527336 A JP 2011527336A JP 5438114 B2 JP5438114 B2 JP 5438114B2
- Authority
- JP
- Japan
- Prior art keywords
- intermetallic layer
- layer
- solder material
- intermetallic
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07232—Compression bonding, e.g. thermocompression bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07336—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07341—Controlling the bonding environment, e.g. atmosphere composition or temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
- H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
- H10W72/3528—Intermetallic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/301—Bonding techniques, e.g. hybrid bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
Landscapes
- Wire Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9819408P | 2008-09-18 | 2008-09-18 | |
| US61/098,194 | 2008-09-18 | ||
| PCT/EP2009/062125 WO2010031845A1 (en) | 2008-09-18 | 2009-09-18 | Methods and systems for material bonding |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012503321A JP2012503321A (ja) | 2012-02-02 |
| JP2012503321A5 JP2012503321A5 (https=) | 2012-06-21 |
| JP5438114B2 true JP5438114B2 (ja) | 2014-03-12 |
Family
ID=41268461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011527336A Active JP5438114B2 (ja) | 2008-09-18 | 2009-09-18 | 材料ボンディングのための方法およびシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8536047B2 (https=) |
| EP (1) | EP2340554B1 (https=) |
| JP (1) | JP5438114B2 (https=) |
| WO (1) | WO2010031845A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2363373A1 (en) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Bonding process for sensitive micro-and nano-systems |
| EP2654075B1 (de) * | 2010-03-31 | 2016-09-28 | EV Group E. Thallner GmbH | Verfahren zum permanenten Verbinden zweier Metalloberflächen |
| US8802553B2 (en) | 2011-02-10 | 2014-08-12 | Infineon Technologies Ag | Method for mounting a semiconductor chip on a carrier |
| JP5588419B2 (ja) * | 2011-10-26 | 2014-09-10 | 株式会社東芝 | パッケージ |
| US8916448B2 (en) | 2013-01-09 | 2014-12-23 | International Business Machines Corporation | Metal to metal bonding for stacked (3D) integrated circuits |
| US9802360B2 (en) | 2013-06-04 | 2017-10-31 | Stratsys, Inc. | Platen planarizing process for additive manufacturing system |
| DE102014116030A1 (de) * | 2014-11-04 | 2016-05-04 | Infineon Technologies Ag | Verfahren zur Herstellung einer Verbindung und Anordnung für eine Chipzusammenstellung mit Direktverbindung |
| CN105826243A (zh) * | 2015-01-09 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 晶圆键合方法以及晶圆键合结构 |
| US9620434B1 (en) | 2016-03-07 | 2017-04-11 | Toyota Motor Engineering & Manufacturing North America, Inc. | High temperature bonding processes incorporating metal particles and bonded substrates formed therefrom |
| JP2017204599A (ja) * | 2016-05-13 | 2017-11-16 | 日本電気硝子株式会社 | 気密パッケージの製造方法及び気密パッケージ |
| EP3754706A1 (en) | 2019-06-20 | 2020-12-23 | IMEC vzw | A method for the electrical bonding of semiconductor components |
| US11164845B2 (en) | 2020-01-30 | 2021-11-02 | International Business Machines Corporation | Resist structure for forming bumps |
| JP7590931B2 (ja) * | 2021-06-16 | 2024-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20230036201A1 (en) * | 2021-07-30 | 2023-02-02 | Stmicroelectronics, Inc. | Leadless semiconductor package with de-metallized porous structures and method for manufacturing the same |
| US20250140657A1 (en) * | 2023-10-27 | 2025-05-01 | Ideal Semiconductor Devices, Inc. | Semiconductor device and method of fabricating same |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US292824A (en) * | 1884-02-05 | Stop and waste cock | ||
| US27294A (en) * | 1860-02-28 | Henry isham | ||
| US114662A (en) * | 1871-05-09 | Improvement in iron culverts | ||
| US3839727A (en) * | 1973-06-25 | 1974-10-01 | Ibm | Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound |
| US5551627A (en) * | 1994-09-29 | 1996-09-03 | Motorola, Inc. | Alloy solder connect assembly and method of connection |
| US6342442B1 (en) * | 1998-11-20 | 2002-01-29 | Agere Systems Guardian Corp. | Kinetically controlled solder bonding |
| WO2001086715A2 (de) * | 2000-05-05 | 2001-11-15 | Infineon Technologies Ag | Verfahren zum verlöten einer ersten metallschicht, die eine dicke von weniger als 5 $g(m)m aufweist, mit einer zweiten metallschicht, löteinrichtung und halbleiterchip-montagevorrichtung |
| US6492197B1 (en) * | 2000-05-23 | 2002-12-10 | Unitive Electronics Inc. | Trilayer/bilayer solder bumps and fabrication methods therefor |
| US20020027294A1 (en) | 2000-07-21 | 2002-03-07 | Neuhaus Herbert J. | Electrical component assembly and method of fabrication |
| JP4656275B2 (ja) * | 2001-01-15 | 2011-03-23 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3897596B2 (ja) * | 2002-01-07 | 2007-03-28 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置と配線基板との実装体 |
| US6926955B2 (en) * | 2002-02-08 | 2005-08-09 | Intel Corporation | Phase change material containing fusible particles as thermally conductive filler |
| US6793829B2 (en) * | 2002-02-27 | 2004-09-21 | Honeywell International Inc. | Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices |
| JP4034107B2 (ja) * | 2002-04-17 | 2008-01-16 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP3682654B2 (ja) * | 2002-09-25 | 2005-08-10 | 千住金属工業株式会社 | 無電解Niメッキ部分へのはんだ付け用はんだ合金 |
| US20050067699A1 (en) * | 2003-09-29 | 2005-03-31 | Intel Corporation | Diffusion barrier layer for lead free package substrate |
| US6994920B2 (en) * | 2003-10-31 | 2006-02-07 | General Electric Company | Fusion welding method and welded article |
| US7064446B2 (en) * | 2004-03-29 | 2006-06-20 | Intel Corporation | Under bump metallization layer to enable use of high tin content solder bumps |
| US7148569B1 (en) * | 2004-09-07 | 2006-12-12 | Altera Corporation | Pad surface finish for high routing density substrate of BGA packages |
| EP1732116B1 (en) * | 2005-06-08 | 2017-02-01 | Imec | Methods for bonding and micro-electronic devices produced according to such methods |
| JP4569423B2 (ja) * | 2005-08-31 | 2010-10-27 | 株式会社日立製作所 | 半導体装置の製造方法 |
| DE102005055280B3 (de) * | 2005-11-17 | 2007-04-12 | Infineon Technologies Ag | Verbindungselement zwischen Halbleiterchip und Schaltungsträger sowie Verfahren zur Herstellung und Verwendung des Verbindungselements |
| US7626274B2 (en) * | 2006-02-03 | 2009-12-01 | Texas Instruments Incorporated | Semiconductor device with an improved solder joint |
| US7939939B1 (en) * | 2007-06-11 | 2011-05-10 | Texas Instruments Incorporated | Stable gold bump solder connections |
| US8242378B2 (en) * | 2007-09-21 | 2012-08-14 | Agere Systems Inc. | Soldering method and related device for improved resistance to brittle fracture with an intermetallic compound region coupling a solder mass to an Ni layer which has a low concentration of P, wherein the amount of P in the underlying Ni layer is controlled as a function of the expected volume of the solder mass |
| JP5535448B2 (ja) * | 2008-05-19 | 2014-07-02 | シャープ株式会社 | 半導体装置、半導体装置の実装方法、および半導体装置の実装構造 |
-
2009
- 2009-09-18 JP JP2011527336A patent/JP5438114B2/ja active Active
- 2009-09-18 WO PCT/EP2009/062125 patent/WO2010031845A1/en not_active Ceased
- 2009-09-18 EP EP09783180.4A patent/EP2340554B1/en active Active
-
2011
- 2011-03-18 US US13/051,357 patent/US8536047B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2340554B1 (en) | 2017-05-10 |
| EP2340554A1 (en) | 2011-07-06 |
| US20110233792A1 (en) | 2011-09-29 |
| WO2010031845A1 (en) | 2010-03-25 |
| US8536047B2 (en) | 2013-09-17 |
| JP2012503321A (ja) | 2012-02-02 |
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