JP5437680B2 - 半導体ウェーハの両面研削装置及び両面研削方法 - Google Patents

半導体ウェーハの両面研削装置及び両面研削方法 Download PDF

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JP5437680B2
JP5437680B2 JP2009082708A JP2009082708A JP5437680B2 JP 5437680 B2 JP5437680 B2 JP 5437680B2 JP 2009082708 A JP2009082708 A JP 2009082708A JP 2009082708 A JP2009082708 A JP 2009082708A JP 5437680 B2 JP5437680 B2 JP 5437680B2
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semiconductor wafer
grinding
double
contact position
thickness
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JP2010238765A5 (enExample
JP2010238765A (ja
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正光 宮崎
達也 辰己
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Sumco Techxiv Corp
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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2009082708A 2009-03-30 2009-03-30 半導体ウェーハの両面研削装置及び両面研削方法 Active JP5437680B2 (ja)

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JP2010238765A5 JP2010238765A5 (enExample) 2012-04-12
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Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
JP6250435B2 (ja) * 2014-02-26 2017-12-20 光洋機械工業株式会社 両頭平面研削法
CN110744378B (zh) * 2019-11-14 2024-10-11 江苏万源新材料股份有限公司 一种裤三通自动成型设备
CN110842762A (zh) * 2019-11-19 2020-02-28 天津中环领先材料技术有限公司 一种大尺寸硅圆片减薄装置及其减薄工艺
CN110860998B (zh) * 2019-12-09 2025-05-27 中环领先(徐州)半导体材料有限公司 双面减薄的装置和方法
CN114770366B (zh) * 2022-05-17 2023-11-17 西安奕斯伟材料科技股份有限公司 一种硅片双面研磨装置的静压板及硅片双面研磨装置
CN115070604B (zh) * 2022-06-09 2023-09-29 西安奕斯伟材料科技股份有限公司 双面研磨装置和双面研磨方法
CN115383616B (zh) * 2022-09-22 2024-05-31 西安奕斯伟材料科技股份有限公司 研磨装置、研磨方法及硅片
CN119188470A (zh) * 2024-11-18 2024-12-27 西安奕斯伟材料科技股份有限公司 硅片平坦度调整系统
CN120715743A (zh) * 2025-04-18 2025-09-30 浙江求是半导体设备有限公司 一种晶圆双面减薄方法和系统

Family Cites Families (2)

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Publication number Priority date Publication date Assignee Title
JP2002346923A (ja) * 2001-05-29 2002-12-04 Sumitomo Heavy Ind Ltd 加工装置
JP2002346924A (ja) * 2001-05-29 2002-12-04 Sumitomo Heavy Ind Ltd ワークホルダ

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