JP5437576B2 - Ｓｉｃ半導体デバイス用のシリコン・リッチのニッケル珪素化合物オーミック・コンタクト - Google Patents

Ｓｉｃ半導体デバイス用のシリコン・リッチのニッケル珪素化合物オーミック・コンタクト Download PDF

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Publication number
JP5437576B2
JP5437576B2 JP2007520398A JP2007520398A JP5437576B2 JP 5437576 B2 JP5437576 B2 JP 5437576B2 JP 2007520398 A JP2007520398 A JP 2007520398A JP 2007520398 A JP2007520398 A JP 2007520398A JP 5437576 B2 JP5437576 B2 JP 5437576B2
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Prior art keywords
silicon
nickel
semiconductor structure
silicon carbide
layer
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JP2007520398A
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Japanese (ja)
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JP2008506258A5 (enExample
JP2008506258A (ja
Inventor
ワード，アラン，ザ・サード
ヘニング，ジェイソン・パトリック
ハグレイトナー，ヘルムート
ウィーバー，キース・デニス
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Electrodes Of Semiconductors (AREA)
JP2007520398A 2004-07-06 2005-06-30 Ｓｉｃ半導体デバイス用のシリコン・リッチのニッケル珪素化合物オーミック・コンタクト Expired - Lifetime JP5437576B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/884,930 2004-07-06
US10/884,930 US20060006393A1 (en) 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
PCT/US2005/023487 WO2006014346A2 (en) 2004-07-06 2005-06-30 Silicon-rich nickel-silicide ohmic contacts for sic semiconductor devices

Publications (3)

Publication Number Publication Date
JP2008506258A JP2008506258A (ja) 2008-02-28
JP2008506258A5 JP2008506258A5 (enExample) 2012-05-31
JP5437576B2 true JP5437576B2 (ja) 2014-03-12

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JP2007520398A Expired - Lifetime JP5437576B2 (ja) 2004-07-06 2005-06-30 Ｓｉｃ半導体デバイス用のシリコン・リッチのニッケル珪素化合物オーミック・コンタクト

Country Status (9)

Country Link
US (2) US20060006393A1 (enExample)
EP (1) EP1774577A2 (enExample)
JP (1) JP5437576B2 (enExample)
KR (1) KR101144882B1 (enExample)
CN (1) CN100517574C (enExample)
AU (2) AU2005270089A1 (enExample)
CA (1) CA2572959C (enExample)
TW (1) TWI270936B (enExample)
WO (1) WO2006014346A2 (enExample)

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US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
DE102006050360B4 (de) 2006-10-25 2014-05-15 Infineon Technologies Austria Ag Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC
JP4140648B2 (ja) * 2006-11-02 2008-08-27 住友電気工業株式会社 ＳｉＣ半導体用オーミック電極、ＳｉＣ半導体用オーミック電極の製造方法、半導体装置および半導体装置の製造方法
US8377812B2 (en) * 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US20080108190A1 (en) * 2006-11-06 2008-05-08 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US9214352B2 (en) 2010-02-11 2015-12-15 Cree, Inc. Ohmic contact to semiconductor device
US9548206B2 (en) 2010-02-11 2017-01-17 Cree, Inc. Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
US8563372B2 (en) * 2010-02-11 2013-10-22 Cree, Inc. Methods of forming contact structures including alternating metal and silicon layers and related devices
WO2011128994A1 (ja) * 2010-04-14 2011-10-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
DE102011013375A1 (de) 2011-03-09 2012-09-13 Marianne Auernhammer Ohmscher Kontakt auf Siliziumkarbid
CN102231363B (zh) * 2011-05-17 2012-11-07 中国电子科技集团公司第十三研究所 一种低比接触电阻、低粗糙度欧姆接触制作方法
JP6112699B2 (ja) * 2012-03-30 2017-04-12 富士電機株式会社 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP2014003252A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN102931224A (zh) * 2012-08-21 2013-02-13 中国科学院微电子研究所 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法
US9230807B2 (en) * 2012-12-18 2016-01-05 General Electric Company Systems and methods for ohmic contacts in silicon carbide devices
US10192970B1 (en) * 2013-09-27 2019-01-29 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Simultaneous ohmic contact to silicon carbide
GB201405800D0 (en) * 2014-03-31 2014-05-14 Isis Innovation Process
JP6350106B2 (ja) * 2014-08-20 2018-07-04 住友電気工業株式会社 炭化珪素半導体装置
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
GB2553849A (en) * 2016-09-19 2018-03-21 Anvil Semiconductors Ltd Method of reducing device contact resistance
US10629686B2 (en) * 2018-08-02 2020-04-21 Semiconductor Components Industries, Llc Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
CN109979813B (zh) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构
DE102019207866A1 (de) * 2019-05-29 2020-12-03 Robert Bosch Gmbh Verfahren zur Erzeugung eines ohmschen Kontakts auf einer Rückseite eines Siliziumkarbidsubstrats und ohmscher Kontakt
US11282927B2 (en) 2020-06-02 2022-03-22 Cree, Inc. Contact structures for semiconductor devices
US12439664B2 (en) 2022-06-24 2025-10-07 Wolfspeed, Inc. Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
JP3079851B2 (ja) * 1993-09-28 2000-08-21 富士電機株式会社 炭化けい素電子デバイスの製造方法
JP3085078B2 (ja) * 1994-03-04 2000-09-04 富士電機株式会社 炭化けい素電子デバイスの製造方法
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
SE504916C2 (sv) * 1995-01-18 1997-05-26 Ericsson Telefon Ab L M Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
AU2001255874A1 (en) * 2000-05-02 2001-11-12 Case Western Reserve University Method for low temperature formation of stable ohmic contacts to silicon carbide
CA2322595C (en) 2000-10-06 2009-05-05 Konstantinos Zekentes Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6759683B1 (en) * 2001-08-27 2004-07-06 The United States Of America As Represented By The Secretary Of The Army Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications
AU2003280487A1 (en) * 2002-06-28 2004-01-19 National Institute Of Advanced Industrial Science And Technology Semiconductor device and its manufacturing method
TWI320571B (en) * 2002-09-12 2010-02-11 Qs Semiconductor Australia Pty Ltd Dynamic nonvolatile random access memory ne transistor cell and random access memory array
US6815323B1 (en) * 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US20040144301A1 (en) * 2003-01-24 2004-07-29 Neudeck Philip G. Method for growth of bulk crystals by vapor phase epitaxy

Also Published As

Publication number Publication date
US20060006393A1 (en) 2006-01-12
KR20070032803A (ko) 2007-03-22
CN100517574C (zh) 2009-07-22
TW200620432A (en) 2006-06-16
US7875545B2 (en) 2011-01-25
EP1774577A2 (en) 2007-04-18
WO2006014346A3 (en) 2006-09-21
CA2572959C (en) 2014-03-18
CA2572959A1 (en) 2006-02-09
KR101144882B1 (ko) 2012-05-14
US20080116464A1 (en) 2008-05-22
AU2010200045A1 (en) 2010-01-28
CN101124660A (zh) 2008-02-13
WO2006014346A2 (en) 2006-02-09
AU2005270089A1 (en) 2006-02-09
JP2008506258A (ja) 2008-02-28
TWI270936B (en) 2007-01-11

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