CN100517574C - 用于SiC半导体器件的富硅的镍-硅化物欧姆接触 - Google Patents

用于SiC半导体器件的富硅的镍-硅化物欧姆接触 Download PDF

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Publication number
CN100517574C
CN100517574C CNB2005800296902A CN200580029690A CN100517574C CN 100517574 C CN100517574 C CN 100517574C CN B2005800296902 A CNB2005800296902 A CN B2005800296902A CN 200580029690 A CN200580029690 A CN 200580029690A CN 100517574 C CN100517574 C CN 100517574C
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Prior art keywords
silicon
silicon carbide
nickel
semiconductor structure
ohmic contact
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Chinese (zh)
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CN101124660A (zh
Inventor
A·沃德三世
J·P·海宁
H·哈格尔伊特纳
K·D·威伯尔
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H10P32/172—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material being crystalline silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Electrodes Of Semiconductors (AREA)
CNB2005800296902A 2004-07-06 2005-06-30 用于SiC半导体器件的富硅的镍-硅化物欧姆接触 Expired - Lifetime CN100517574C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/884,930 2004-07-06
US10/884,930 US20060006393A1 (en) 2004-07-06 2004-07-06 Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Publications (2)

Publication Number Publication Date
CN101124660A CN101124660A (zh) 2008-02-13
CN100517574C true CN100517574C (zh) 2009-07-22

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Country Link
US (2) US20060006393A1 (enExample)
EP (1) EP1774577A2 (enExample)
JP (1) JP5437576B2 (enExample)
KR (1) KR101144882B1 (enExample)
CN (1) CN100517574C (enExample)
AU (2) AU2005270089A1 (enExample)
CA (1) CA2572959C (enExample)
TW (1) TWI270936B (enExample)
WO (1) WO2006014346A2 (enExample)

Cited By (1)

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CN109979813A (zh) * 2019-03-28 2019-07-05 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构

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US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
DE102006050360B4 (de) 2006-10-25 2014-05-15 Infineon Technologies Austria Ag Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC
JP4140648B2 (ja) * 2006-11-02 2008-08-27 住友電気工業株式会社 ＳｉＣ半導体用オーミック電極、ＳｉＣ半導体用オーミック電極の製造方法、半導体装置および半導体装置の製造方法
US8377812B2 (en) * 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US20080108190A1 (en) * 2006-11-06 2008-05-08 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US9214352B2 (en) 2010-02-11 2015-12-15 Cree, Inc. Ohmic contact to semiconductor device
US9548206B2 (en) 2010-02-11 2017-01-17 Cree, Inc. Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
US8563372B2 (en) * 2010-02-11 2013-10-22 Cree, Inc. Methods of forming contact structures including alternating metal and silicon layers and related devices
WO2011128994A1 (ja) * 2010-04-14 2011-10-20 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
DE102011013375A1 (de) 2011-03-09 2012-09-13 Marianne Auernhammer Ohmscher Kontakt auf Siliziumkarbid
CN102231363B (zh) * 2011-05-17 2012-11-07 中国电子科技集团公司第十三研究所 一种低比接触电阻、低粗糙度欧姆接触制作方法
JP6112699B2 (ja) * 2012-03-30 2017-04-12 富士電機株式会社 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置
JP2014003252A (ja) * 2012-06-21 2014-01-09 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN102931224A (zh) * 2012-08-21 2013-02-13 中国科学院微电子研究所 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法
US9230807B2 (en) * 2012-12-18 2016-01-05 General Electric Company Systems and methods for ohmic contacts in silicon carbide devices
US10192970B1 (en) * 2013-09-27 2019-01-29 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Simultaneous ohmic contact to silicon carbide
GB201405800D0 (en) * 2014-03-31 2014-05-14 Isis Innovation Process
JP6350106B2 (ja) * 2014-08-20 2018-07-04 住友電気工業株式会社 炭化珪素半導体装置
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
GB2553849A (en) * 2016-09-19 2018-03-21 Anvil Semiconductors Ltd Method of reducing device contact resistance
US10629686B2 (en) * 2018-08-02 2020-04-21 Semiconductor Components Industries, Llc Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
DE102019207866A1 (de) * 2019-05-29 2020-12-03 Robert Bosch Gmbh Verfahren zur Erzeugung eines ohmschen Kontakts auf einer Rückseite eines Siliziumkarbidsubstrats und ohmscher Kontakt
US11282927B2 (en) 2020-06-02 2022-03-22 Cree, Inc. Contact structures for semiconductor devices
US12439664B2 (en) 2022-06-24 2025-10-07 Wolfspeed, Inc. Methods of forming ohmic contacts on semiconductor devices with trench/mesa structures

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US4662063A (en) * 1986-01-28 1987-05-05 The United States Of America As Represented By The Department Of The Navy Generation of ohmic contacts on indium phosphide
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
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US5502003A (en) * 1994-03-04 1996-03-26 Fuji Electric Co., Ltd. Silicon carbide electronic device manufacturing method
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
CN1172551A (zh) * 1995-01-18 1998-02-04 艾利森电话股份有限公司 产生欧姆接触及制造设有该种欧姆接触的半导体器件的方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109979813A (zh) * 2019-03-28 2019-07-05 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构
CN109979813B (zh) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构

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US20060006393A1 (en) 2006-01-12
KR20070032803A (ko) 2007-03-22
TW200620432A (en) 2006-06-16
US7875545B2 (en) 2011-01-25
EP1774577A2 (en) 2007-04-18
WO2006014346A3 (en) 2006-09-21
CA2572959C (en) 2014-03-18
CA2572959A1 (en) 2006-02-09
KR101144882B1 (ko) 2012-05-14
US20080116464A1 (en) 2008-05-22
AU2010200045A1 (en) 2010-01-28
CN101124660A (zh) 2008-02-13
WO2006014346A2 (en) 2006-02-09
JP5437576B2 (ja) 2014-03-12
AU2005270089A1 (en) 2006-02-09
JP2008506258A (ja) 2008-02-28
TWI270936B (en) 2007-01-11

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