JP5427792B2 - メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置 - Google Patents
メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置 Download PDFInfo
- Publication number
- JP5427792B2 JP5427792B2 JP2010546083A JP2010546083A JP5427792B2 JP 5427792 B2 JP5427792 B2 JP 5427792B2 JP 2010546083 A JP2010546083 A JP 2010546083A JP 2010546083 A JP2010546083 A JP 2010546083A JP 5427792 B2 JP5427792 B2 JP 5427792B2
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- JP
- Japan
- Prior art keywords
- bore
- fluid
- resistance
- flow
- plenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000012530 fluid Substances 0.000 title claims description 442
- 230000005499 meniscus Effects 0.000 title claims description 69
- 238000012545 processing Methods 0.000 title claims description 33
- 238000012546 transfer Methods 0.000 claims description 34
- 230000013011 mating Effects 0.000 claims description 22
- 230000008878 coupling Effects 0.000 claims description 20
- 238000010168 coupling process Methods 0.000 claims description 20
- 238000005859 coupling reaction Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 239000002033 PVDF binder Substances 0.000 claims description 6
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 138
- 239000007788 liquid Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- 230000006870 function Effects 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 9
- 230000001276 controlling effect Effects 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000005304 joining Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 4
- 229920001780 ECTFE Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 ethylene-chlorotrifluoroethylene Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6508808P | 2008-02-08 | 2008-02-08 | |
| US61/065,088 | 2008-02-08 | ||
| PCT/US2009/033499 WO2009100409A2 (en) | 2008-02-08 | 2009-02-07 | Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011512654A JP2011512654A (ja) | 2011-04-21 |
| JP2011512654A5 JP2011512654A5 (enExample) | 2012-03-22 |
| JP5427792B2 true JP5427792B2 (ja) | 2014-02-26 |
Family
ID=40952731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010546083A Expired - Fee Related JP5427792B2 (ja) | 2008-02-08 | 2009-02-07 | メニスカスによるウエハー表面処理において近接ヘッドに対する流体の流速をほぼ一定にする装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8317966B2 (enExample) |
| JP (1) | JP5427792B2 (enExample) |
| KR (1) | KR101679432B1 (enExample) |
| CN (1) | CN101971299B (enExample) |
| SG (1) | SG188086A1 (enExample) |
| TW (1) | TWI381473B (enExample) |
| WO (1) | WO2009100409A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7849554B2 (en) * | 2009-04-28 | 2010-12-14 | Lam Research Corporation | Apparatus and system for cleaning substrate |
| JP5701645B2 (ja) * | 2011-03-01 | 2015-04-15 | 株式会社Screenホールディングス | ノズル、基板処理装置、および基板処理方法 |
| JP6061181B2 (ja) | 2012-08-20 | 2017-01-18 | ローム株式会社 | 半導体装置 |
| US9859135B2 (en) * | 2014-12-19 | 2018-01-02 | Applied Materials, Inc. | Substrate rinsing systems and methods |
| KR102116534B1 (ko) * | 2018-06-25 | 2020-05-28 | 주식회사 에이치에스하이테크 | 기판 세정용 노즐 및 그 제조 방법 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041181A (en) * | 1987-10-06 | 1991-08-20 | Integrated Fluidics Company | Method of bonding plastics |
| US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
| JP2002075947A (ja) * | 2000-08-30 | 2002-03-15 | Alps Electric Co Ltd | ウェット処理装置 |
| JP3880480B2 (ja) | 2001-12-06 | 2007-02-14 | 東京エレクトロン株式会社 | 液処理装置 |
| JP3916491B2 (ja) * | 2002-03-28 | 2007-05-16 | 芝浦メカトロニクス株式会社 | 基板の処理装置 |
| JP2003324072A (ja) * | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
| US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
| US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US7329321B2 (en) * | 2002-09-30 | 2008-02-12 | Lam Research Corporation | Enhanced wafer cleaning method |
| US7520285B2 (en) * | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
| JP4343031B2 (ja) * | 2004-05-31 | 2009-10-14 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US7003899B1 (en) * | 2004-09-30 | 2006-02-28 | Lam Research Corporation | System and method for modulating flow through multiple ports in a proximity head |
| JP5068471B2 (ja) * | 2006-03-31 | 2012-11-07 | 東京エレクトロン株式会社 | 基板処理装置 |
| US7998304B2 (en) * | 2007-12-20 | 2011-08-16 | Lam Research Corporation | Methods of configuring a proximity head that provides uniform fluid flow relative to a wafer |
-
2009
- 2009-02-07 KR KR1020107017572A patent/KR101679432B1/ko not_active Expired - Fee Related
- 2009-02-07 US US12/367,515 patent/US8317966B2/en active Active
- 2009-02-07 JP JP2010546083A patent/JP5427792B2/ja not_active Expired - Fee Related
- 2009-02-07 SG SG2013006853A patent/SG188086A1/en unknown
- 2009-02-07 WO PCT/US2009/033499 patent/WO2009100409A2/en not_active Ceased
- 2009-02-07 CN CN200980104907.XA patent/CN101971299B/zh not_active Expired - Fee Related
- 2009-02-09 TW TW98104111A patent/TWI381473B/zh not_active IP Right Cessation
-
2012
- 2012-10-26 US US13/661,969 patent/US8900400B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20130048765A1 (en) | 2013-02-28 |
| TWI381473B (zh) | 2013-01-01 |
| WO2009100409A2 (en) | 2009-08-13 |
| KR20100119763A (ko) | 2010-11-10 |
| US8900400B2 (en) | 2014-12-02 |
| CN101971299B (zh) | 2013-03-20 |
| CN101971299A (zh) | 2011-02-09 |
| JP2011512654A (ja) | 2011-04-21 |
| KR101679432B1 (ko) | 2016-12-06 |
| US8317966B2 (en) | 2012-11-27 |
| US20100037922A1 (en) | 2010-02-18 |
| SG188086A1 (en) | 2013-03-28 |
| WO2009100409A3 (en) | 2009-12-03 |
| TW201001587A (en) | 2010-01-01 |
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