TWI381473B - 利用彎液面處理晶圓表面時之相對於近接頭實質上均一流體流率用的設備 - Google Patents
利用彎液面處理晶圓表面時之相對於近接頭實質上均一流體流率用的設備 Download PDFInfo
- Publication number
- TWI381473B TWI381473B TW98104111A TW98104111A TWI381473B TW I381473 B TWI381473 B TW I381473B TW 98104111 A TW98104111 A TW 98104111A TW 98104111 A TW98104111 A TW 98104111A TW I381473 B TWI381473 B TW I381473B
- Authority
- TW
- Taiwan
- Prior art keywords
- flow
- fluid
- bore
- resistor
- block
- Prior art date
Links
- 239000012530 fluid Substances 0.000 title claims description 471
- 230000005499 meniscus Effects 0.000 title claims description 79
- 238000012545 processing Methods 0.000 title description 22
- 230000003750 conditioning effect Effects 0.000 claims description 38
- 230000001105 regulatory effect Effects 0.000 claims description 29
- 239000007788 liquid Substances 0.000 claims description 24
- 230000013011 mating Effects 0.000 claims description 19
- 239000011148 porous material Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000003491 array Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 6
- 238000013022 venting Methods 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims 1
- 238000005304 joining Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 147
- 230000032258 transport Effects 0.000 description 110
- 238000005553 drilling Methods 0.000 description 36
- 239000000758 substrate Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 12
- 238000000926 separation method Methods 0.000 description 12
- 238000010276 construction Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000012552 review Methods 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000001143 conditioned effect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001780 ECTFE Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000008450 motivation Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920007925 Ethylene chlorotrifluoroethylene (ECTFE) Polymers 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010102 embolization Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 flat display surface Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6508808P | 2008-02-08 | 2008-02-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001587A TW201001587A (en) | 2010-01-01 |
| TWI381473B true TWI381473B (zh) | 2013-01-01 |
Family
ID=40952731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98104111A TWI381473B (zh) | 2008-02-08 | 2009-02-09 | 利用彎液面處理晶圓表面時之相對於近接頭實質上均一流體流率用的設備 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8317966B2 (enExample) |
| JP (1) | JP5427792B2 (enExample) |
| KR (1) | KR101679432B1 (enExample) |
| CN (1) | CN101971299B (enExample) |
| SG (1) | SG188086A1 (enExample) |
| TW (1) | TWI381473B (enExample) |
| WO (1) | WO2009100409A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7849554B2 (en) * | 2009-04-28 | 2010-12-14 | Lam Research Corporation | Apparatus and system for cleaning substrate |
| JP5701645B2 (ja) * | 2011-03-01 | 2015-04-15 | 株式会社Ｓｃｒｅｅｎホールディングス | ノズル、基板処理装置、および基板処理方法 |
| JP6061181B2 (ja) | 2012-08-20 | 2017-01-18 | ローム株式会社 | 半導体装置 |
| US9859135B2 (en) * | 2014-12-19 | 2018-01-02 | Applied Materials, Inc. | Substrate rinsing systems and methods |
| KR102116534B1 (ko) * | 2018-06-25 | 2020-05-28 | 주식회사 에이치에스하이테크 | 기판 세정용 노즐 및 그 제조 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041181A (en) * | 1987-10-06 | 1991-08-20 | Integrated Fluidics Company | Method of bonding plastics |
| JP2003234286A (ja) * | 2001-12-06 | 2003-08-22 | Tokyo Electron Ltd | 液処理装置 |
| US20030209323A1 (en) * | 2002-05-07 | 2003-11-13 | Nec Electronics Corporation | Production apparatus for manufacturing semiconductor device |
| US20060124153A1 (en) * | 2002-09-30 | 2006-06-15 | Lam Research Corp. | Enhanced wafer cleaning method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
| JP2002075947A (ja) * | 2000-08-30 | 2002-03-15 | Alps Electric Co Ltd | ウェット処理装置 |
| JP3916491B2 (ja) | 2002-03-28 | 2007-05-16 | 芝浦メカトロニクス株式会社 | 基板の処理装置 |
| US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US7240679B2 (en) * | 2002-09-30 | 2007-07-10 | Lam Research Corporation | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
| US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US7520285B2 (en) * | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
| JP4343031B2 (ja) * | 2004-05-31 | 2009-10-14 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US7003899B1 (en) * | 2004-09-30 | 2006-02-28 | Lam Research Corporation | System and method for modulating flow through multiple ports in a proximity head |
| JP5068471B2 (ja) | 2006-03-31 | 2012-11-07 | 東京エレクトロン株式会社 | 基板処理装置 |
| US7998304B2 (en) * | 2007-12-20 | 2011-08-16 | Lam Research Corporation | Methods of configuring a proximity head that provides uniform fluid flow relative to a wafer |
-
2009
- 2009-02-07 JP JP2010546083A patent/JP5427792B2/ja not_active Expired - Fee Related
- 2009-02-07 US US12/367,515 patent/US8317966B2/en active Active
- 2009-02-07 WO PCT/US2009/033499 patent/WO2009100409A2/en not_active Ceased
- 2009-02-07 KR KR1020107017572A patent/KR101679432B1/ko not_active Expired - Fee Related
- 2009-02-07 CN CN200980104907.XA patent/CN101971299B/zh not_active Expired - Fee Related
- 2009-02-07 SG SG2013006853A patent/SG188086A1/en unknown
- 2009-02-09 TW TW98104111A patent/TWI381473B/zh not_active IP Right Cessation
-
2012
- 2012-10-26 US US13/661,969 patent/US8900400B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041181A (en) * | 1987-10-06 | 1991-08-20 | Integrated Fluidics Company | Method of bonding plastics |
| JP2003234286A (ja) * | 2001-12-06 | 2003-08-22 | Tokyo Electron Ltd | 液処理装置 |
| US20030209323A1 (en) * | 2002-05-07 | 2003-11-13 | Nec Electronics Corporation | Production apparatus for manufacturing semiconductor device |
| US20060124153A1 (en) * | 2002-09-30 | 2006-06-15 | Lam Research Corp. | Enhanced wafer cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101679432B1 (ko) | 2016-12-06 |
| US8317966B2 (en) | 2012-11-27 |
| SG188086A1 (en) | 2013-03-28 |
| CN101971299A (zh) | 2011-02-09 |
| TW201001587A (en) | 2010-01-01 |
| JP2011512654A (ja) | 2011-04-21 |
| JP5427792B2 (ja) | 2014-02-26 |
| WO2009100409A2 (en) | 2009-08-13 |
| KR20100119763A (ko) | 2010-11-10 |
| US20130048765A1 (en) | 2013-02-28 |
| CN101971299B (zh) | 2013-03-20 |
| WO2009100409A3 (en) | 2009-12-03 |
| US20100037922A1 (en) | 2010-02-18 |
| US8900400B2 (en) | 2014-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |