JP5425439B2 - 発光素子、発光装置、および電子機器 - Google Patents

発光素子、発光装置、および電子機器 Download PDF

Info

Publication number
JP5425439B2
JP5425439B2 JP2008268424A JP2008268424A JP5425439B2 JP 5425439 B2 JP5425439 B2 JP 5425439B2 JP 2008268424 A JP2008268424 A JP 2008268424A JP 2008268424 A JP2008268424 A JP 2008268424A JP 5425439 B2 JP5425439 B2 JP 5425439B2
Authority
JP
Japan
Prior art keywords
layer
light
organic compound
emitting element
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008268424A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009117823A5 (https=
JP2009117823A (ja
Inventor
智子 下垣
恒徳 鈴木
哲史 瀬尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008268424A priority Critical patent/JP5425439B2/ja
Publication of JP2009117823A publication Critical patent/JP2009117823A/ja
Publication of JP2009117823A5 publication Critical patent/JP2009117823A5/ja
Application granted granted Critical
Publication of JP5425439B2 publication Critical patent/JP5425439B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008268424A 2007-10-19 2008-10-17 発光素子、発光装置、および電子機器 Expired - Fee Related JP5425439B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008268424A JP5425439B2 (ja) 2007-10-19 2008-10-17 発光素子、発光装置、および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007272003 2007-10-19
JP2007272003 2007-10-19
JP2008268424A JP5425439B2 (ja) 2007-10-19 2008-10-17 発光素子、発光装置、および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013244488A Division JP2014060442A (ja) 2007-10-19 2013-11-27 発光素子、発光装置、照明装置および電子機器

Publications (3)

Publication Number Publication Date
JP2009117823A JP2009117823A (ja) 2009-05-28
JP2009117823A5 JP2009117823A5 (https=) 2011-11-10
JP5425439B2 true JP5425439B2 (ja) 2014-02-26

Family

ID=40562798

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008268424A Expired - Fee Related JP5425439B2 (ja) 2007-10-19 2008-10-17 発光素子、発光装置、および電子機器
JP2013244488A Withdrawn JP2014060442A (ja) 2007-10-19 2013-11-27 発光素子、発光装置、照明装置および電子機器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013244488A Withdrawn JP2014060442A (ja) 2007-10-19 2013-11-27 発光素子、発光装置、照明装置および電子機器

Country Status (5)

Country Link
US (1) US9337438B2 (https=)
JP (2) JP5425439B2 (https=)
CN (2) CN101803058B (https=)
TW (2) TWI474758B (https=)
WO (1) WO2009051248A1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1876658A3 (en) 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7902742B2 (en) * 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
TWI481308B (zh) 2007-09-27 2015-04-11 Semiconductor Energy Lab 發光元件，發光裝置，與電子設備
KR101707430B1 (ko) * 2009-05-29 2017-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 조명 장치 및 전자기기
US9741955B2 (en) 2009-05-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and method for manufacturing the same
JP2011139044A (ja) * 2009-12-01 2011-07-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
CN105702873B (zh) * 2011-03-30 2017-11-24 株式会社半导体能源研究所 发光元件
KR101921896B1 (ko) * 2011-12-12 2018-11-26 메르크 파텐트 게엠베하 전자 소자용 화합물
DE112013007882B4 (de) 2012-04-20 2025-10-02 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
US10270041B2 (en) * 2015-08-28 2019-04-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
KR102574052B1 (ko) * 2015-11-19 2023-09-04 엘지디스플레이 주식회사 유기발광 표시장치
US10374183B2 (en) * 2015-11-19 2019-08-06 Lg Display Co., Ltd. Organic light emitting display device having layer to control charge transfer
KR101857547B1 (ko) * 2017-01-26 2018-05-24 벽산페인트 주식회사 정공수송 화합물 및 이를 포함한 유기 발광 소자
CN111819708A (zh) * 2018-09-26 2020-10-23 株式会社半导体能源研究所 发光器件、发光装置、电子设备及照明装置
WO2020194411A1 (ja) * 2019-03-22 2020-10-01 シャープ株式会社 発光素子、発光デバイス
KR102174351B1 (ko) * 2020-05-12 2020-11-04 두산솔루스 주식회사 유기 전계 발광 소자
CN113823752B (zh) * 2021-09-18 2023-09-01 京东方科技集团股份有限公司 空穴注入材料、电致发光器件和显示装置
US20240049593A1 (en) * 2021-10-29 2024-02-08 Samsung Display Co., Ltd. Light emitting device and amine compound for light emitting device
US20230157155A1 (en) * 2021-10-29 2023-05-18 Samsung Display Co., Ltd. Light emitting device and amine compound for light emitting device

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US107918A (en) * 1870-10-04 jones
US243992A (en) * 1881-07-05 Heebeet l
US11942A (en) * 1854-11-14 Tapeworm-trap
JP3332491B2 (ja) * 1993-08-27 2002-10-07 三洋電機株式会社 有機ｅｌ素子
DE19500912A1 (de) * 1995-01-13 1996-07-18 Basf Ag Elektrolumineszierende Anordnung
EP0818943B1 (en) 1996-07-09 2005-02-23 Sony Corporation Electroluminescent device
JPH1079297A (ja) * 1996-07-09 1998-03-24 Sony Corp 電界発光素子
JP3370011B2 (ja) * 1998-05-19 2003-01-27 三洋電機株式会社 有機エレクトロルミネッセンス素子
US7001536B2 (en) * 1999-03-23 2006-02-21 The Trustees Of Princeton University Organometallic complexes as phosphorescent emitters in organic LEDs
US6573651B2 (en) * 2000-12-18 2003-06-03 The Trustees Of Princeton University Highly efficient OLEDs using doped ambipolar conductive molecular organic thin films
TW545080B (en) 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
SG2009086778A (en) 2000-12-28 2016-11-29 Semiconductor Energy Lab Co Ltd Luminescent device
TW582121B (en) * 2001-02-08 2004-04-01 Semiconductor Energy Lab Light emitting device
US7009338B2 (en) * 2001-05-16 2006-03-07 The University Of Southern California High efficiency multi-color electro-phosphorescent OLEDs
AU2002329813A1 (en) * 2001-08-29 2003-03-18 The Trustees Of Princeton University Organic light emitting devices having carrier blocking layers comprising metal complexes
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
DE60331704D1 (de) * 2002-04-12 2010-04-29 Konica Corp Organisches lichtemittierendes Element
JP2004079413A (ja) 2002-08-21 2004-03-11 Nec Corp 有機エレクトロルミネッセント素子
US20040058193A1 (en) * 2002-09-16 2004-03-25 Eastman Kodak Company White organic light-emitting devices with improved performance
US20040086743A1 (en) * 2002-11-06 2004-05-06 Brown Cory S. Organometallic compounds for use in electroluminescent devices
JP4287198B2 (ja) * 2002-11-18 2009-07-01 出光興産株式会社 有機エレクトロルミネッセンス素子
US6833201B2 (en) * 2003-01-31 2004-12-21 Clemson University Nanostructured-doped compound for use in an EL element
CN1212318C (zh) 2003-03-07 2005-07-27 中国科学院化学研究所 芴－萘二酰亚胺衍生物化合物和应用
CN100565960C (zh) * 2003-04-02 2009-12-02 富士胶片株式会社 有机电致发光元件和有机电致发光显示器
JP2005063763A (ja) * 2003-08-08 2005-03-10 Seiko Epson Corp 有機ｅｌ装置とその製造方法、及び電子機器
JP4186758B2 (ja) 2003-09-01 2008-11-26 三菱化学株式会社 高分子化合物、正孔注入・輸送材料、有機電界発光素子材料および有機電界発光素子
CN1610468A (zh) * 2003-10-24 2005-04-27 宾得株式会社 白色的有机电致发光装置
JP4947909B2 (ja) * 2004-03-25 2012-06-06 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP2005310742A (ja) * 2004-03-25 2005-11-04 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子
US7622200B2 (en) * 2004-05-21 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting element
JP4916137B2 (ja) 2004-07-29 2012-04-11 三洋電機株式会社 有機エレクトロルミネッセンス素子
TWI382079B (zh) * 2004-07-30 2013-01-11 Sanyo Electric Co 有機電場發光元件及有機電場發光顯示裝置
JP4565921B2 (ja) * 2004-07-30 2010-10-20 三洋電機株式会社 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置
US7892657B2 (en) * 2004-11-30 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP4653469B2 (ja) * 2004-12-01 2011-03-16 出光興産株式会社 有機電界発光素子
TWI307250B (en) * 2005-03-23 2009-03-01 Au Optronics Corp Organic electroluminescent device
US20060214151A1 (en) * 2005-03-24 2006-09-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and laser apparatus using the light-emitting element
JP2006303456A (ja) * 2005-03-24 2006-11-02 Semiconductor Energy Lab Co Ltd 発光素子及び当該発光素子を用いたレーザー装置
JP4716773B2 (ja) * 2005-04-06 2011-07-06 富士フイルム株式会社 ガスバリアフィルムとそれを用いた有機デバイス
JP2007012359A (ja) * 2005-06-29 2007-01-18 Hitachi Displays Ltd 有機ｅｌ表示装置
JP4787094B2 (ja) 2005-07-04 2011-10-05 株式会社半導体エネルギー研究所 発光装置の作製方法
US8288180B2 (en) * 2005-07-04 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device
US8415878B2 (en) 2005-07-06 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP5105784B2 (ja) 2005-07-06 2012-12-26 株式会社半導体エネルギー研究所 発光素子、発光装置及び電子機器
KR100695307B1 (ko) * 2005-07-29 2007-03-14 한양대학교 산학협력단 유기발광소자 및 그 제조방법
WO2007026587A1 (en) * 2005-08-29 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative and hole transporting material, light emitting element, and electronic appliance using the same
TWI257946B (en) 2005-08-31 2006-07-11 Chunghwa Picture Tubes Ltd Organic electro-luminescence device and material of hole transport layer
CN101273008A (zh) 2005-09-30 2008-09-24 株式会社半导体能源研究所 螺芴衍生物,发光元件用材料,发光元件,发光设备和电子设备
US8148891B2 (en) * 2005-10-04 2012-04-03 Universal Display Corporation Electron impeding layer for high efficiency phosphorescent OLEDs
US8592052B2 (en) 2005-12-16 2013-11-26 Mitsubishi Chemical Corporation Organic electroluminescence device
JP2007201407A (ja) * 2005-12-26 2007-08-09 Fuji Xerox Co Ltd 有機電界発光素子
WO2007086310A1 (en) * 2006-01-27 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting material, light emitting device, and electronic device
WO2007094101A1 (ja) * 2006-02-14 2007-08-23 Sharp Kabushiki Kaisha 有機エレクトロルミネッセンス装置及び有機エレクトロルミネッセンス表示装置
US9112170B2 (en) * 2006-03-21 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP2007258362A (ja) 2006-03-22 2007-10-04 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子
EP1863105B1 (en) * 2006-06-02 2020-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
KR101386216B1 (ko) * 2006-06-07 2014-04-18 삼성디스플레이 주식회사 유기 발광 소자
US7902742B2 (en) * 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP1876658A3 (en) * 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP5179805B2 (ja) 2006-08-30 2013-04-10 株式会社半導体エネルギー研究所 アントラセン誘導体、発光素子および発光装置
WO2008026614A1 (en) * 2006-08-30 2008-03-06 Semiconductor Energy Laboratory Co., Ltd. Method for synthesizing anthracene derivative and anthracene derivative, light emitting element, light emitting device, electronic device
US7911135B2 (en) * 2006-11-29 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light emitting device, electronic appliance, and method of manufacturing the same
KR101426717B1 (ko) * 2006-12-04 2014-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치 및 전자 기기
KR101596676B1 (ko) * 2007-02-21 2016-02-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기 및 퀴녹살린 유도체
EP1973386B8 (en) * 2007-03-23 2016-01-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
JP2008237686A (ja) 2007-03-28 2008-10-09 Sanyo Electric Co Ltd 伸縮可能センサ及び該センサを用いた体調管理装置

Also Published As

Publication number Publication date
CN102655223B (zh) 2015-07-22
TW200932039A (en) 2009-07-16
TWI474758B (zh) 2015-02-21
CN101803058B (zh) 2012-07-11
CN102655223A (zh) 2012-09-05
US20090102368A1 (en) 2009-04-23
US9337438B2 (en) 2016-05-10
JP2009117823A (ja) 2009-05-28
TW201242424A (en) 2012-10-16
TWI474757B (zh) 2015-02-21
WO2009051248A1 (en) 2009-04-23
JP2014060442A (ja) 2014-04-03
CN101803058A (zh) 2010-08-11

Similar Documents

Publication Publication Date Title
JP7397135B2 (ja) 発光素子、発光装置および電子機器
JP5425439B2 (ja) 発光素子、発光装置、および電子機器
JP5530608B2 (ja) 発光素子および発光装置
JP5594928B2 (ja) 発光素子、発光装置並びに電子機器
US9041282B2 (en) Light-emitting element, light-emitting device, and electronic device including first and second light-emitting units

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110927

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130410

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130909

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131024

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131127

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5425439

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees