JP5419634B2 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
JP5419634B2
JP5419634B2 JP2009245411A JP2009245411A JP5419634B2 JP 5419634 B2 JP5419634 B2 JP 5419634B2 JP 2009245411 A JP2009245411 A JP 2009245411A JP 2009245411 A JP2009245411 A JP 2009245411A JP 5419634 B2 JP5419634 B2 JP 5419634B2
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JP
Japan
Prior art keywords
pattern
template
substrate
processed
convex portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009245411A
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English (en)
Japanese (ja)
Other versions
JP2011091307A (ja
JP2011091307A5 (enExample
Inventor
正之 幡野
帥現 姜
哲郎 中杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2009245411A priority Critical patent/JP5419634B2/ja
Priority to US12/882,944 priority patent/US8118585B2/en
Publication of JP2011091307A publication Critical patent/JP2011091307A/ja
Publication of JP2011091307A5 publication Critical patent/JP2011091307A5/ja
Application granted granted Critical
Publication of JP5419634B2 publication Critical patent/JP5419634B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009245411A 2009-10-26 2009-10-26 パターン形成方法 Expired - Fee Related JP5419634B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009245411A JP5419634B2 (ja) 2009-10-26 2009-10-26 パターン形成方法
US12/882,944 US8118585B2 (en) 2009-10-26 2010-09-15 Pattern formation method and a method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009245411A JP5419634B2 (ja) 2009-10-26 2009-10-26 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2011091307A JP2011091307A (ja) 2011-05-06
JP2011091307A5 JP2011091307A5 (enExample) 2012-04-26
JP5419634B2 true JP5419634B2 (ja) 2014-02-19

Family

ID=43898779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009245411A Expired - Fee Related JP5419634B2 (ja) 2009-10-26 2009-10-26 パターン形成方法

Country Status (2)

Country Link
US (1) US8118585B2 (enExample)
JP (1) JP5419634B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5693488B2 (ja) 2012-02-20 2015-04-01 株式会社東芝 パターン形成方法、パターン形成装置及び半導体装置の製造方法
JP6302287B2 (ja) 2014-03-04 2018-03-28 東芝メモリ株式会社 インプリント装置およびパターン形成方法
FR3030875B1 (fr) * 2014-12-22 2022-10-14 Commissariat Energie Atomique Procede d'obtention de motifs dans une couche
US10578965B2 (en) * 2016-03-31 2020-03-03 Canon Kabushiki Kaisha Pattern forming method
AU2018234668A1 (en) * 2017-03-16 2019-09-12 Molecular Imprints, Inc. Optical polymer films and methods for casting the same
CN115257026A (zh) 2017-10-17 2022-11-01 奇跃公司 用于铸造聚合物产品的方法和装置
JP7077754B2 (ja) * 2018-05-08 2022-05-31 大日本印刷株式会社 インプリントモールド用基板、インプリントモールド及びそれらの製造方法
CN113167969B (zh) 2018-10-16 2023-08-08 奇跃公司 用于浇铸聚合物产品的方法和装置
JP7558696B2 (ja) * 2020-07-06 2024-10-01 キヤノン株式会社 成形装置及び物品の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241614A (ja) * 1985-04-19 1986-10-27 Hitachi Ltd 変位検知機構
JPH0330813Y2 (enExample) * 1985-08-22 1991-06-28
JP2000323461A (ja) * 1999-05-11 2000-11-24 Nec Corp 微細パターン形成装置、その製造方法、および形成方法
JP4217551B2 (ja) * 2003-07-02 2009-02-04 キヤノン株式会社 微細加工方法及び微細加工装置
JP2006245072A (ja) * 2005-02-28 2006-09-14 Canon Inc パターン転写用モールドおよび転写装置
US7418902B2 (en) * 2005-05-31 2008-09-02 Asml Netherlands B.V. Imprint lithography including alignment
JP2007027361A (ja) 2005-07-15 2007-02-01 Toppan Printing Co Ltd インプリント用モールド
JP5268239B2 (ja) * 2005-10-18 2013-08-21 キヤノン株式会社 パターン形成装置、パターン形成方法
JP2007173614A (ja) * 2005-12-22 2007-07-05 Ricoh Co Ltd 微細加工装置
US20070151328A1 (en) * 2005-12-30 2007-07-05 Asml Holding N.V. Vacuum driven proximity sensor
EP2001602B1 (en) * 2006-04-03 2011-06-22 Molecular Imprints, Inc. Lithography imprinting system
US7247843B1 (en) * 2006-05-11 2007-07-24 Massachusetts Institute Of Technology Long-range gap detection with interferometric sensitivity using spatial phase of interference patterns
JP2008008889A (ja) * 2006-05-31 2008-01-17 Canon Inc ギャップ測定方法、インプリント方法、及びインプリント装置
US20090101037A1 (en) * 2006-05-31 2009-04-23 Canon Kabushiki Kaisha Gap measuring method, imprint method, and imprint apparatus
JP2008078550A (ja) * 2006-09-25 2008-04-03 Toppan Printing Co Ltd インプリントモールドおよびその製造方法およびパターン形成方法
JP2008091782A (ja) * 2006-10-04 2008-04-17 Toshiba Corp パターン形成用テンプレート、パターン形成方法、及びナノインプリント装置
JP5186114B2 (ja) 2007-02-14 2013-04-17 東芝機械株式会社 転写装置および転写方法
JP5570688B2 (ja) * 2007-06-28 2014-08-13 ピーエスフォー ルクスコ エスエイアールエル 微細レジストパターン形成方法及びナノインプリントモールド構造
KR100843552B1 (ko) * 2007-07-19 2008-07-04 한국전자통신연구원 나노 임프린트 공정을 이용한 나노 전극선 제조 방법
US8945444B2 (en) * 2007-12-04 2015-02-03 Canon Nanotechnologies, Inc. High throughput imprint based on contact line motion tracking control

Also Published As

Publication number Publication date
US8118585B2 (en) 2012-02-21
JP2011091307A (ja) 2011-05-06
US20110097827A1 (en) 2011-04-28

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