JP5417128B2 - リードフレーム及びその製造方法、及び半導体装置 - Google Patents
リードフレーム及びその製造方法、及び半導体装置 Download PDFInfo
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- JP5417128B2 JP5417128B2 JP2009263194A JP2009263194A JP5417128B2 JP 5417128 B2 JP5417128 B2 JP 5417128B2 JP 2009263194 A JP2009263194 A JP 2009263194A JP 2009263194 A JP2009263194 A JP 2009263194A JP 5417128 B2 JP5417128 B2 JP 5417128B2
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- lead frame
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- plating film
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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| JP2009263194A JP5417128B2 (ja) | 2008-11-27 | 2009-11-18 | リードフレーム及びその製造方法、及び半導体装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5947107B2 (ja) * | 2012-05-23 | 2016-07-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6007611B2 (ja) * | 2012-06-20 | 2016-10-12 | 大日本印刷株式会社 | Led用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法 |
| KR101451028B1 (ko) | 2013-08-22 | 2014-10-15 | (주)옵토니카 | Led 리드 프레임 제조방법 |
| JP6187201B2 (ja) | 2013-11-29 | 2017-08-30 | 日亜化学工業株式会社 | 発光装置用反射膜、並びに、それを備えるリードフレーム、配線基板、ワイヤ、及び発光装置 |
| JP6176224B2 (ja) * | 2013-12-25 | 2017-08-09 | 日亜化学工業株式会社 | 半導体素子及びそれを備える半導体装置、並びに半導体素子の製造方法 |
| JP6398541B2 (ja) * | 2014-09-29 | 2018-10-03 | 日亜化学工業株式会社 | リードフレーム及び発光装置 |
| JP6510900B2 (ja) * | 2014-09-30 | 2019-05-08 | イサハヤ電子株式会社 | 半導体装置用接合材及びその製造方法 |
| JP6624930B2 (ja) | 2015-12-26 | 2019-12-25 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
| JP6683003B2 (ja) | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
| CN107369667A (zh) * | 2016-05-13 | 2017-11-21 | 松下电器产业株式会社 | 信号传送装置 |
| JP6720747B2 (ja) | 2016-07-19 | 2020-07-08 | 日亜化学工業株式会社 | 半導体装置、基台及びそれらの製造方法 |
| JP6187659B2 (ja) * | 2016-09-09 | 2017-08-30 | 大日本印刷株式会社 | Led用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法 |
| US10312186B2 (en) * | 2017-10-31 | 2019-06-04 | Amkor Technology Inc. | Heat sink attached to an electronic component in a packaged device |
| JP7271337B2 (ja) * | 2019-06-27 | 2023-05-11 | 新光電気工業株式会社 | 電子部品装置及び電子部品装置の製造方法 |
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| JPH0945836A (ja) * | 1995-07-28 | 1997-02-14 | Dainippon Printing Co Ltd | リードフレームの部分めっき方法およびその方法により作製されたリードフレーム |
| JP3054628B2 (ja) * | 1996-06-25 | 2000-06-19 | 富士電機株式会社 | 電気機器の摺動接触子 |
| KR100381302B1 (ko) * | 1999-04-08 | 2003-04-26 | 신꼬오덴기 고교 가부시키가이샤 | 반도체 장치 및 그 제조방법 |
| DE102005015454B4 (de) * | 2005-04-04 | 2010-02-18 | Infineon Technologies Ag | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip sowie Verfahren zur Herstellung desselben |
| JP2008056950A (ja) * | 2006-08-29 | 2008-03-13 | Shinshu Univ | 銀複合材料およびその製造方法 |
| JP2008153470A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
| TWI456707B (zh) * | 2008-01-28 | 2014-10-11 | 瑞薩電子股份有限公司 | 半導體裝置及其製造方法 |
| US8288207B2 (en) * | 2009-02-13 | 2012-10-16 | Infineon Technologies Ag | Method of manufacturing semiconductor devices |
| US9583413B2 (en) * | 2009-02-13 | 2017-02-28 | Infineon Technologies Ag | Semiconductor device |
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| US8304872B2 (en) | 2012-11-06 |
| US20100127369A1 (en) | 2010-05-27 |
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