JP5410992B2 - 基板ダイオードを備えてプロセス耐性構造を有するsoiデバイス及びその製造方法 - Google Patents
基板ダイオードを備えてプロセス耐性構造を有するsoiデバイス及びその製造方法 Download PDFInfo
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Description
Claims (5)
- SOI基板(201、301)の第1デバイス領域(210、310)に第1開口部(211B、311B)と第2開口部(211A、311A)とを形成する一方で第2デバイス領域(220、320)を覆うステップを含み、前記第1開口部(211B、311B)と第2開口部(211A、311A)とは、埋め込み絶縁層(204、304)を通って結晶性基板材料(202、302)にまで拡張されており、前記第2デバイス領域(220、320)には第1トランジスタ(230、330B)と第2トランジスタ(330A)とが形成されて各々拡張領域(234)を備えるものとなっており、さらに、前記第1および第2開口部(211A、211B、311A、311B)を形成する前に、前記第1および第2トランジスタ(230、330、330B)のゲート電極(231)のサイドウォールに形成されたサイドウォールスペーサ(236、336)を含むものであって、
前記第1トランジスタ(230、330B)にドレインおよびソース領域(237、337)を、さらに、前記第1開口部(211B、311B)により露出された前記第1結晶性基板材料(202、302)に第1ドープ領域(217B、317B)を共通の第1ドレイン/ソース注入プロセス(209p)で形成するステップと、
前記第2トランジスタ(330A)へのドレインおよびソース領域(337)の形成と、前記第2開口部(211A、311A)により露出された前記結晶性基板材料(202、302)への第2ドープ領域(217A、317A)の形成と、を共通の第2ドレイン/ソース注入プロセス(209n)で行うステップと、
前記共通の第1ドレイン/ソース注入プロセス(209p)および前記共通の第2ドレイン/ソース注入プロセス(209n)の後に前記第1開口部(211B、311B)および前記第2開口部(211A、311A)のサイドウォールに第1スペーサ素子(360S)を形成し、前記第1開口部(211B、311B)および前記第1トランジスタ(230、330B)に対してさらなる共通のドレイン/ソース注入プロセスを行い、前記第2開口部(211A、311A)および前記第2トランジスタ(330A)に対してさらなる共通のドレイン/ソース注入プロセスを行うステップと、
前記第1および第2トランジスタ(230、330A、330B)と、前記第1および第2ドープ領域(217A、317A、217B、317B)と、に金属シリサイド(238、218、318)を形成するステップと、を含む方法。 - 前記ドレインおよびソース領域(237、337)と、前記第1および第2ドープ領域(217A、317A、217B、317B)と、を前記金属シリサイド(238、218、318)を形成する前にアニールするステップをさらに含む、請求項1記載の方法。
- 前記金属シリサイド(238)を形成する前に前記サイドウォールスペーサ(236、336)を除去するステップをさらに含む、請求項1記載の方法。
- 前記共通の第1および第2ドレイン/ソース注入プロセス(209p、209n)後に、前記第1および第2開口部(311A、311B)のサイドウォールにスペーサ素子(360S)を形成するステップと、
前記第1開口部(211B、311B)と前記第1トランジスタ(230、330B)に対してさらなる共通のドレイン/ソース注入プロセスを実行するとともに、前記第2開口部(211A、311A)と前記第2トランジスタ(330A)に対してさらなる共通のドレイン/ソース注入プロセスを実行するステップをさらに含む、請求項1記載の方法。 - 前記金属シリサイド(318)を形成する前に、前記第1および第2開口部(311A、311B)のサイドウォールにスペーサ素子(360S)を形成するステップをさらに含む、請求項1記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007004859.0 | 2007-01-31 | ||
DE102007004859A DE102007004859A1 (de) | 2007-01-31 | 2007-01-31 | SOI-Bauelement mit einer Substratdiode mit Prozess toleranter Konfiguration und Verfahren zur Herstellung des SOI-Bauelements |
US11/862,296 | 2007-09-27 | ||
US11/862,296 US7943442B2 (en) | 2007-01-31 | 2007-09-27 | SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device |
PCT/US2008/001310 WO2008094666A2 (en) | 2007-01-31 | 2008-01-31 | An soi device having a substrate diode with process tolerant configuration and method of forming the soi device |
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JP2013231193A Division JP5615422B2 (ja) | 2007-01-31 | 2013-11-07 | 基板ダイオードを備えてプロセス耐性構造を有するsoiデバイス及びその製造方法 |
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JP2010517324A JP2010517324A (ja) | 2010-05-20 |
JP5410992B2 true JP5410992B2 (ja) | 2014-02-05 |
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JP2009548309A Active JP5410992B2 (ja) | 2007-01-31 | 2008-01-31 | 基板ダイオードを備えてプロセス耐性構造を有するsoiデバイス及びその製造方法 |
JP2013231193A Active JP5615422B2 (ja) | 2007-01-31 | 2013-11-07 | 基板ダイオードを備えてプロセス耐性構造を有するsoiデバイス及びその製造方法 |
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US (2) | US7943442B2 (ja) |
JP (2) | JP5410992B2 (ja) |
KR (1) | KR101391417B1 (ja) |
CN (1) | CN101669201A (ja) |
DE (1) | DE102007004859A1 (ja) |
GB (1) | GB2459072B (ja) |
TW (1) | TWI483343B (ja) |
WO (1) | WO2008094666A2 (ja) |
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DE102008063403A1 (de) * | 2008-12-31 | 2010-07-08 | Advanced Micro Devices, Inc., Sunnyvale | SOI-Bauelement mit einem vergrabenen isolierenden Material mit erhöhter Ätzwiderstandsfähigkeit |
US9368648B2 (en) | 2009-04-02 | 2016-06-14 | Qualcomm Incorporated | Active diode having no gate and no shallow trench isolation |
DE102009021487B4 (de) | 2009-05-15 | 2013-07-04 | Globalfoundries Dresden Module One Llc & Co. Kg | Halbleiterelement mit vergrabener isolierender Schicht und pn-Übergang sowie entsprechendes Herstellungsverfahren |
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US20110183477A1 (en) | 2011-07-28 |
WO2008094666A3 (en) | 2009-02-19 |
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JP5615422B2 (ja) | 2014-10-29 |
GB2459072B (en) | 2011-06-29 |
US20080268585A1 (en) | 2008-10-30 |
WO2008094666A2 (en) | 2008-08-07 |
US7943442B2 (en) | 2011-05-17 |
GB2459072A (en) | 2009-10-14 |
KR20090108727A (ko) | 2009-10-16 |
KR101391417B1 (ko) | 2014-05-02 |
JP2010517324A (ja) | 2010-05-20 |
TW200845297A (en) | 2008-11-16 |
JP2014064018A (ja) | 2014-04-10 |
TWI483343B (zh) | 2015-05-01 |
US8377761B2 (en) | 2013-02-19 |
CN101669201A (zh) | 2010-03-10 |
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