JP5410760B2 - 半導体素子、化合物、半導体素子の半導体層及び薄膜トランジスタ素子を作製する方法 - Google Patents

半導体素子、化合物、半導体素子の半導体層及び薄膜トランジスタ素子を作製する方法 Download PDF

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JP5410760B2
JP5410760B2 JP2008544954A JP2008544954A JP5410760B2 JP 5410760 B2 JP5410760 B2 JP 5410760B2 JP 2008544954 A JP2008544954 A JP 2008544954A JP 2008544954 A JP2008544954 A JP 2008544954A JP 5410760 B2 JP5410760 B2 JP 5410760B2
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compound
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JP2009519595A5 (enExample
JP2009519595A (ja
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ベレンズ，ウルリッヒ
ビーネワルト，フランク
キルナー，ハンス・イェルク
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BASF Schweiz AG
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    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
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  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2008544954A 2005-12-12 2006-12-04 半導体素子、化合物、半導体素子の半導体層及び薄膜トランジスタ素子を作製する方法 Expired - Fee Related JP5410760B2 (ja)

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EP05111963.4 2005-12-12
EP05111963 2005-12-12
PCT/EP2006/069281 WO2007068618A1 (en) 2005-12-12 2006-12-04 Organic semiconductors and their manufacture

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JP2009519595A JP2009519595A (ja) 2009-05-14
JP2009519595A5 JP2009519595A5 (enExample) 2010-01-28
JP5410760B2 true JP5410760B2 (ja) 2014-02-05

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US (1) US8101776B2 (enExample)
EP (2) EP2573833B1 (enExample)
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CN (1) CN101356662B (enExample)
TW (1) TWI415317B (enExample)
WO (1) WO2007068618A1 (enExample)

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