JP5410032B2 - 有機半導体装置 - Google Patents
有機半導体装置 Download PDFInfo
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- JP5410032B2 JP5410032B2 JP2008109033A JP2008109033A JP5410032B2 JP 5410032 B2 JP5410032 B2 JP 5410032B2 JP 2008109033 A JP2008109033 A JP 2008109033A JP 2008109033 A JP2008109033 A JP 2008109033A JP 5410032 B2 JP5410032 B2 JP 5410032B2
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- electrode
- insulating film
- transistor
- organic
- organic semiconductor
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- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Description
(但し、ID:ドレイン電流、W:チャネル幅、ε0:真空の誘電率、εr:比誘電率、μ:電界効果移動度、VG:ゲート電圧、Vth:しきい値電圧、d:ゲート絶縁膜厚み、L:チャネル長)
図1は、本発明に従う一実施形態の有機半導体装置を示す断面図である。本実施形態の有機半導体装置は、有機EL素子を用いた画素を駆動するためのアクティブマトリクスデバイスである。図1に示す断面図は、図2に示す平面図のA−A線に沿う断面図である。
比較の有機半導体装置として、図15に示すアクティブマトリクス型回路を形成した。図15に示すように、駆動用トランジスタ21として、スイッチング用トランジスタ22と同様の縦型トランジスタを形成した。スイッチング用トランジスタ22のソース/ドレイン電極10は、第1の電極2に接続されており、第1の電極2は、有機EL素子を形成する透明電極14に隣接して形成されている。第1の電極2には、駆動用トランジスタ21のゲート電極16が接続されている。第1の電極2の上には、層間絶縁膜17が設けられ、層間絶縁膜17の上に、キャパシタ用電極15が形成されている。キャパシタ用電極15は、電源線24に接続されている。
図8は、本発明に従う他の実施形態の有機半導体装置を示す断面図である。図8に示す断面図は、図9に示すB−B線に沿う断面図である。図9は、本実施形態の有機半導体装置を示す平面図である。
図11は、本発明に従うさらに他の実施形態であるアクティブマトリクス型回路を製造する工程を示す平面図である。
図13は、本発明に従うさらに他の実施形態の有機半導体装置である、有機EL素子を用いたアクティブマトリクス型回路の製造工程を示す平面図である。
2…第1の電極(ゲート電極)
3…第1の絶縁膜(ゲート絶縁膜)
4…第2の電極(ソース/ドレイン電極)
5…第3の電極(ソース/ドレイン電極)
6…有機半導体層
7…電極パッド
8…走査線(ゲート電極)
9…ソース/ドレイン電極
10…ソース/ドレイン電極
11…ゲート絶縁膜
12…フローティング電極
13…有機半導体層
14…透明電極
15…キャパシタ用電極
16…ゲート電極
17…層間絶縁膜
18…第2の絶縁膜
19…第4の電極
20…キャパシタ部
21…トランジスタ部(駆動用トランジスタ)
22…スイッチング用トランジスタ
23…信号線
24…電源線
25…有機EL素子
30…保護絶縁膜
31…ホール輸送層
32…発光層
33…電子輸送層
34…陰極
35…封止膜
Claims (3)
- キャパシタ部とトランジスタ部を有する有機半導体装置であって、
基板と、
前記基板上に形成された凸部の少なくとも上面部を構成する第1の電極と、
前記第1の電極上及び前記凸部の側面上に設けられる第1の絶縁膜と、
前記凸部の上方の前記第1の絶縁膜上に設けられる第2の電極と、
前記凸部の前記側面の下方に隣接して前記基板上に設けられる第3の電極と、
前記凸部の前記側面上の前記第1の絶縁膜を覆い、前記第2の電極及び前記第3の電極と接するように設けられる有機半導体層とを備え、
前記第1の電極と、前記第1の絶縁膜と、前記第2の電極とから、前記キャパシタ部が構成され、
前記第2の電極及び前記第3の電極からなるソース電極及びドレイン電極と、前記第1の電極からなるゲート電極と、前記第1の絶縁膜からなるゲート絶縁膜と、前記有機半導体層からなる半導体層とから、前記トランジスタ部が構成され、
前記凸部が、前記基板上に設けられる第4の電極と、前記第4の電極上に設けられる第2の絶縁膜と、前記第2の絶縁膜上に設けられる前記第1の電極とから構成されており、
前記第4の電極が前記第2の電極と電気的に接続され、前記キャパシタ部が、前記第2の絶縁膜を介して設けられる前記第4の電極と前記第1の電極間にも形成されていることを特徴とする有機半導体装置。 - スイッチング用トランジスタと、駆動用トランジスタと、前記駆動用トランジスタからの駆動信号により駆動される画素表示部と、走査信号を与える走査線と、画素信号を与える信号線と、前記画素表示部に印加する電圧を与える電源線とを備え、
前記駆動用トランジスタが前記トランジスタ部から構成され、
前記スイッチング用トランジスタのゲート電極に与えられる前記走査線からの前記走査信号に応じて前記スイッチング用トランジスタが、前記信号線からの前記画素信号を前記駆動用トランジスタの前記ゲート電極である前記第1の電極に与え、これによって前記キャパシタ部に電荷を蓄積し、前記第1の電極の電位または前記キャパシタ部に蓄積された電荷量に応じて、前記電源線に電気的に接続された前記第2の電極と、前記画素表示部に設けられた前記第3の電極との間を流れる電流を制御し、前記画素表示部に印加する前記電源線から供給された電流もしくは電圧を制御することを特徴とする請求項1に記載の有機半導体装置。 - 前記電源線の一部が前記第2の電極を兼ねており、前記電源線の前記一部の下方に、前記第1の絶縁膜及び前記第1の電極が設けられていることを特徴とする請求項2に記載の有機半導体装置。
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