JP5408132B2 - Ｍｉｓ型電界効果トランジスタの製造方法 - Google Patents
Ｍｉｓ型電界効果トランジスタの製造方法 Download PDFInfo
- Publication number
- JP5408132B2 JP5408132B2 JP2010517952A JP2010517952A JP5408132B2 JP 5408132 B2 JP5408132 B2 JP 5408132B2 JP 2010517952 A JP2010517952 A JP 2010517952A JP 2010517952 A JP2010517952 A JP 2010517952A JP 5408132 B2 JP5408132 B2 JP 5408132B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- field effect
- effect transistor
- manufacturing
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 230000005669 field effect Effects 0.000 title claims description 40
- 238000005530 etching Methods 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 28
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000002407 reforming Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 144
- 230000001681 protective effect Effects 0.000 description 24
- 230000003071 parasitic effect Effects 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 15
- 238000002955 isolation Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910021334 nickel silicide Inorganic materials 0.000 description 6
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
- H01L29/66507—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide providing different silicide thicknesses on the gate and on source or drain
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010517952A JP5408132B2 (ja) | 2008-06-18 | 2009-06-17 | Ｍｉｓ型電界効果トランジスタの製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008158956 | 2008-06-18 | ||
| JP2008158956 | 2008-06-18 | ||
| PCT/JP2009/061057 WO2009154242A1 (fr) | 2008-06-18 | 2009-06-17 | Procédé de fabrication d'un transistor à effet de champ de type mis |
| JP2010517952A JP5408132B2 (ja) | 2008-06-18 | 2009-06-17 | Ｍｉｓ型電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2009154242A1 JPWO2009154242A1 (ja) | 2011-12-01 |
| JP5408132B2 true JP5408132B2 (ja) | 2014-02-05 |
Family
ID=41434158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010517952A Expired - Fee Related JP5408132B2 (ja) | 2008-06-18 | 2009-06-17 | Ｍｉｓ型電界効果トランジスタの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5408132B2 (fr) |
| WO (1) | WO2009154242A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599341A (zh) * | 2018-12-12 | 2019-04-09 | 上海华力微电子有限公司 | 半导体结构的制造方法及半导体结构 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106556A (ja) * | 1993-10-01 | 1995-04-21 | Toyota Motor Corp | 半導体装置の製造方法 |
| JPH10326891A (ja) * | 1997-05-26 | 1998-12-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2005057013A (ja) * | 2003-08-01 | 2005-03-03 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
| JP2006108629A (ja) * | 2004-09-10 | 2006-04-20 | Toshiba Corp | 半導体装置の製造方法 |
| JP2006140175A (ja) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
| JP2006190821A (ja) * | 2005-01-06 | 2006-07-20 | Sony Corp | 絶縁ゲート電界効果トランジスタおよびその製造方法 |
| JP2008098264A (ja) * | 2006-10-10 | 2008-04-24 | Sony Corp | 半導体装置の製造方法 |
-
2009
- 2009-06-17 JP JP2010517952A patent/JP5408132B2/ja not_active Expired - Fee Related
- 2009-06-17 WO PCT/JP2009/061057 patent/WO2009154242A1/fr active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07106556A (ja) * | 1993-10-01 | 1995-04-21 | Toyota Motor Corp | 半導体装置の製造方法 |
| JPH10326891A (ja) * | 1997-05-26 | 1998-12-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2005057013A (ja) * | 2003-08-01 | 2005-03-03 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
| JP2006108629A (ja) * | 2004-09-10 | 2006-04-20 | Toshiba Corp | 半導体装置の製造方法 |
| JP2006140175A (ja) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
| JP2006190821A (ja) * | 2005-01-06 | 2006-07-20 | Sony Corp | 絶縁ゲート電界効果トランジスタおよびその製造方法 |
| JP2008098264A (ja) * | 2006-10-10 | 2008-04-24 | Sony Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009154242A1 (fr) | 2009-12-23 |
| JPWO2009154242A1 (ja) | 2011-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5204645B2 (ja) | 強化した応力伝送効率でコンタクト絶縁層を形成する技術 | |
| JP5079687B2 (ja) | Ｓｏｉデバイスの製造方法 | |
| US7723762B2 (en) | Schottky barrier FinFET device and fabrication method thereof | |
| JP4447128B2 (ja) | 絶縁ゲート型半導体装置の製造方法 | |
| JP2007019129A (ja) | 半導体装置の製造方法及び半導体装置 | |
| JP2006054423A (ja) | 半導体装置及びその製造方法 | |
| TW200411938A (en) | Semiconductor device and its manufacturing method | |
| JP3798377B2 (ja) | ショットキー障壁トンネルトランジスタの製造方法 | |
| KR100414735B1 (ko) | 반도체소자 및 그 형성 방법 | |
| JP2007103456A (ja) | 半導体装置及びその製造方法 | |
| TW574746B (en) | Method for manufacturing MOSFET with recessed channel | |
| KR100790267B1 (ko) | 반도체 소자의 트랜지스터 및 그 제조방법 | |
| KR100576464B1 (ko) | 반도체소자의 도전배선 형성방법 | |
| JP5408132B2 (ja) | Ｍｉｓ型電界効果トランジスタの製造方法 | |
| US7115464B2 (en) | Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device | |
| KR100563095B1 (ko) | 반도체 소자의 실리사이드 형성방법 | |
| KR100586178B1 (ko) | 쇼트키 장벽 관통 트랜지스터 및 그 제조방법 | |
| US9076818B2 (en) | Semiconductor device fabrication methods | |
| US7745298B2 (en) | Method of forming a via | |
| US6180474B1 (en) | Method for fabricating semiconductor device | |
| US20230378297A1 (en) | Source/Drains In Semiconductor Devices and Methods of Forming Thereof | |
| JP2008047820A (ja) | 半導体装置の製造方法および半導体装置 | |
| KR100596802B1 (ko) | 반도체 소자의 제조방법 | |
| KR100459930B1 (ko) | 부분적으로 셀프 얼라인 된 살리사이드 콘택 형성 방법 | |
| JP2007158299A (ja) | ショットキー障壁トンネルトランジスタ及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120518 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131008 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131021 |
|
| LAPS | Cancellation because of no payment of annual fees |