JP5405887B2 - 研磨装置及び研磨方法 - Google Patents

研磨装置及び研磨方法 Download PDF

Info

Publication number
JP5405887B2
JP5405887B2 JP2009108192A JP2009108192A JP5405887B2 JP 5405887 B2 JP5405887 B2 JP 5405887B2 JP 2009108192 A JP2009108192 A JP 2009108192A JP 2009108192 A JP2009108192 A JP 2009108192A JP 5405887 B2 JP5405887 B2 JP 5405887B2
Authority
JP
Japan
Prior art keywords
polishing
conditioning disk
conditioning
standby position
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009108192A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010253637A (ja
JP2010253637A5 (ja
Inventor
昌史 白谷
茂之 吉田
修 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009108192A priority Critical patent/JP5405887B2/ja
Priority to US12/662,340 priority patent/US8562392B2/en
Priority to CN201010170037.0A priority patent/CN101898328B/zh
Publication of JP2010253637A publication Critical patent/JP2010253637A/ja
Publication of JP2010253637A5 publication Critical patent/JP2010253637A5/ja
Application granted granted Critical
Publication of JP5405887B2 publication Critical patent/JP5405887B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
JP2009108192A 2009-04-27 2009-04-27 研磨装置及び研磨方法 Expired - Fee Related JP5405887B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009108192A JP5405887B2 (ja) 2009-04-27 2009-04-27 研磨装置及び研磨方法
US12/662,340 US8562392B2 (en) 2009-04-27 2010-04-12 Polishing apparatus and polishing method
CN201010170037.0A CN101898328B (zh) 2009-04-27 2010-04-27 抛光设备及抛光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009108192A JP5405887B2 (ja) 2009-04-27 2009-04-27 研磨装置及び研磨方法

Publications (3)

Publication Number Publication Date
JP2010253637A JP2010253637A (ja) 2010-11-11
JP2010253637A5 JP2010253637A5 (ja) 2012-04-12
JP5405887B2 true JP5405887B2 (ja) 2014-02-05

Family

ID=42992556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009108192A Expired - Fee Related JP5405887B2 (ja) 2009-04-27 2009-04-27 研磨装置及び研磨方法

Country Status (3)

Country Link
US (1) US8562392B2 (zh)
JP (1) JP5405887B2 (zh)
CN (1) CN101898328B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010179407A (ja) * 2009-02-05 2010-08-19 Elpida Memory Inc Ｃｍｐ装置
CN102320026A (zh) * 2011-09-07 2012-01-18 清华大学 化学机械抛光方法
CN102294649A (zh) * 2011-09-07 2011-12-28 清华大学 化学机械抛光方法
CN102294647A (zh) * 2011-09-07 2011-12-28 清华大学 化学机械抛光方法
CN103035504B (zh) * 2011-10-09 2016-07-06 中芯国际集成电路制造(北京)有限公司 化学机械抛光方法和化学机械抛光设备
TWI577497B (zh) * 2012-10-31 2017-04-11 Ebara Corp Grinding device
CN104416466A (zh) * 2013-08-26 2015-03-18 中芯国际集成电路制造(上海)有限公司 一种用于化学机械抛光工艺的抛光垫修整方法
TWI689378B (zh) * 2013-10-04 2020-04-01 日商福吉米股份有限公司 研磨裝置，研磨構件的加工方法，研磨構件的修整方法，形狀加工用切削工具及表面修整用工具
CN104625941B (zh) * 2013-11-14 2018-09-04 盛美半导体设备（上海）有限公司 晶圆加工装置
JP6233326B2 (ja) * 2015-02-04 2017-11-22 信越半導体株式会社 研磨布立ち上げ方法及び研磨方法
US10096460B2 (en) 2016-08-02 2018-10-09 Semiconductor Components Industries, Llc Semiconductor wafer and method of wafer thinning using grinding phase and separation phase
CN107855900B (zh) * 2017-12-27 2024-01-16 中原工学院 一种两工位聚晶金刚石复合片类抛光机
CN109202724A (zh) * 2018-09-12 2019-01-15 上海华力集成电路制造有限公司 化学机械研磨装置及其操作方法
CN111993268A (zh) * 2020-08-24 2020-11-27 台州市老林装饰有限公司 一种晶圆研磨头装置
KR20220073192A (ko) * 2020-11-26 2022-06-03 에스케이실트론 주식회사 연마 패드 세정 장치 및 연마 장치
CN114851057A (zh) * 2021-02-04 2022-08-05 中国科学院微电子研究所 晶圆抛光装置及抛光方法
WO2023239421A1 (en) * 2022-06-06 2023-12-14 Applied Materials, Inc. In-situ conditioner disk cleaning during cmp

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5839947A (en) * 1996-02-05 1998-11-24 Ebara Corporation Polishing apparatus
JP3720451B2 (ja) 1996-03-19 2005-11-30 株式会社荏原製作所 ポリッシング装置及びその運転方法
JP3475004B2 (ja) * 1996-03-19 2003-12-08 株式会社荏原製作所 ポリッシング装置
US6217430B1 (en) * 1998-11-02 2001-04-17 Applied Materials, Inc. Pad conditioner cleaning apparatus
US6358124B1 (en) * 1998-11-02 2002-03-19 Applied Materials, Inc. Pad conditioner cleaning apparatus
JP3708740B2 (ja) 1999-03-15 2005-10-19 株式会社東芝 研磨装置および研磨方法
JP4030247B2 (ja) * 1999-05-17 2008-01-09 株式会社荏原製作所 ドレッシング装置及びポリッシング装置
JP2000343407A (ja) * 1999-06-08 2000-12-12 Ebara Corp ドレッシング装置
EP1080840A3 (en) * 1999-08-30 2004-01-02 Mitsubishi Materials Corporation Polishing apparatus, polishing method and method of conditioning polishing pad
JP2001260024A (ja) * 2000-03-10 2001-09-25 Mitsubishi Materials Corp ドレッサー装置用洗浄装置
JP2001138233A (ja) * 1999-11-19 2001-05-22 Sony Corp 研磨装置、研磨方法および研磨工具の洗浄方法
JP2002079461A (ja) * 2000-09-07 2002-03-19 Ebara Corp ポリッシング装置
JP2002355759A (ja) * 2001-05-30 2002-12-10 Hitachi Cable Ltd ウエハ研磨装置
US20030064595A1 (en) * 2001-09-28 2003-04-03 Wang Michael Shu-Huan Chemical mechanical polishing defect reduction system and method
KR100513402B1 (ko) * 2003-09-25 2005-09-09 삼성전자주식회사 화학적 기계적 연마 패드의 컨디셔너 클리닝장치
CN1914004B (zh) * 2004-01-26 2010-06-02 Tbw工业有限公司 用于化学机械平面化的多步骤、原位垫修整方法
US7097542B2 (en) * 2004-07-26 2006-08-29 Intel Corporation Method and apparatus for conditioning a polishing pad
US7210981B2 (en) * 2005-05-26 2007-05-01 Applied Materials, Inc. Smart conditioner rinse station

Also Published As

Publication number Publication date
JP2010253637A (ja) 2010-11-11
CN101898328B (zh) 2012-10-03
US20100273401A1 (en) 2010-10-28
US8562392B2 (en) 2013-10-22
CN101898328A (zh) 2010-12-01

Similar Documents

Publication Publication Date Title
JP5405887B2 (ja) 研磨装置及び研磨方法
KR100666664B1 (ko) 폴리싱장치
US20150024661A1 (en) Mechanisms for removing debris from polishing pad
KR101747970B1 (ko) 연마패드의 드레싱 방법 및 드레싱 장치
JP2002103201A (ja) ポリッシング装置
US6953390B2 (en) Polishing apparatus
JP2010228058A (ja) 研磨布の洗浄装置および洗浄方法
KR102229920B1 (ko) 화학 기계적 평탄화 후의 기판 버프 사전 세정을 위한 시스템, 방법 및 장치
US6764388B2 (en) High-pressure pad cleaning system
US20190039203A1 (en) Substrate processing apparatus
JP5911792B2 (ja) 研磨方法
JP5699597B2 (ja) 両面研磨装置
JP2007301661A (ja) 研磨装置
JP4349752B2 (ja) ポリッシング方法
KR20220009885A (ko) 드레싱 장치 및 연마 장치
JP2015044250A (ja) ポリッシング方法
JP5257752B2 (ja) 研磨パッドのドレッシング方法
US11980997B2 (en) Dressing apparatus and polishing apparatus
JP5484172B2 (ja) 研磨パッドのテーパ面形成方法
US20220016742A1 (en) Dressing apparatus and polishing apparatus
JP5484171B2 (ja) 研磨パッドの溝形成方法
JPH11347938A (ja) 研磨生成物の排出機構及び研磨装置
JP2002370159A (ja) ポリッシング装置
JP2006066425A (ja) 半導体基板の研磨方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120229

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120229

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130604

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130805

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131015

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131031

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees