JP5396002B2 - 多端子カルコゲニドスイッチングデバイス - Google Patents
多端子カルコゲニドスイッチングデバイス Download PDFInfo
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- JP5396002B2 JP5396002B2 JP2006508659A JP2006508659A JP5396002B2 JP 5396002 B2 JP5396002 B2 JP 5396002B2 JP 2006508659 A JP2006508659 A JP 2006508659A JP 2006508659 A JP2006508659 A JP 2006508659A JP 5396002 B2 JP5396002 B2 JP 5396002B2
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- 150000004770 chalcogenides Chemical group 0.000 title claims description 167
- 239000000463 material Substances 0.000 claims description 170
- 238000004891 communication Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 230000002829 reductive effect Effects 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 19
- 230000015654 memory Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 230000008054 signal transmission Effects 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 230000006399 behavior Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052798 chalcogen Inorganic materials 0.000 description 5
- 150000001787 chalcogens Chemical class 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 230000004044 response Effects 0.000 description 4
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- 238000004132 cross linking Methods 0.000 description 3
- 239000003607 modifier Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008707 rearrangement Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000013543 active substance Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Electronic Switches (AREA)
- Electrodes Of Semiconductors (AREA)
Description
今日の電子デバイスは従来のシリコン技術に依存している。シリコン技術を用いて、最新のコンピュータおよび消費家電製品を生産するのに必要な電子部品(例えば、トランジスタ、ダイオード、スイッチ、メモリ、集積回路およびプロセッサ)を作製することができる。シリコンベースの電子機器は市場において著しい成功を収めてきたし、日常生活を大幅に簡素化する数々の利便性をもたらしてきた。
本発明は、今日の従来型のコンピュータよりも優れた機能性を有する新規のコンピュータおよび演算デバイスの構成において使用可能な電子スイッチングデバイスを提供するものである。本デバイスは、シリコンではなく抵抗および導電状態間で可逆的に転換することができるカルコゲニド相変化材料に基づくものである。状態間の転換は、相変化材料に閾値エネルギーに見合った、またはそれを上回る量のエネルギーを与えることによって生じる。少なくとも閾値量のエネルギーを外部ソースから抵抗状態に印加することによって、材料が導電状態にスイッチする。導電状態は最少量の外部エネルギーが材料に与えられる限り持続する。外部エネルギーが断たれると、材料は抵抗状態へと戻る。
本発明は、カルコゲニド材料に基づく電子スイッチングデバイスを提供する。カルコゲニド材料のスイッチング特性は広く知られており、これまでOTS(Ovonic Threshold Switch)デバイスで活用されてきた。OTSについては、その開示が参照することにより本明細書に組み込まれる米国特許第5,543,737号、第5,694,146号および第5,757,446号、ならびにその開示が参照することにより本明細書に組み込まれるS.R.Ovshinskyによる「Reversible Electrical Switching Phenomena in Disordered Structures」、Physical Review Letters、vol.21、p.1450−1453 (1969)、S.R.OvshinskyおよびH.Fritzscheによる「Amorphous Semiconductors for Switching,Memory, and Imaging Applications」、IEEE Transactions on Electron Devices,vol.ED−20、p.91−105(1973)を含むいくつかの学術論文に記載されている。
本発明によるデバイス構造の例が図3に示されている。図3は三端子デバイス構造の断面図である。3つの端子はT(1)、T(2)およびT(3)で表示されている。これらのデバイスの複数が6’’シリコンウエハー上に形成されている。このウエハー上のデバイスおよび層は、従来のスパッタリング、化学気相堆積、エッチングおよびリソグラフィ技術を用いて形成された。この構造には、シリコンウエハー基板10と、熱酸化物層20と、TiWまたはTiおよびTiNの組み合わせからなる導電層40ならびにカーボンバリア層50を含む底部電極30と、SiOX/SiNX絶縁領域60と、TiWからなる制御電極70と、カルコゲニド材料80と、カーボンバリア層100ならびにTiおよびTiNを含む導電層110を含む頂部電極90と、Al層120とを含んでいる。この例では、カルコゲニド材料80がGe2Te2Sb5であり、図3にGSTで表示されている。バリア層はカルコゲニド領域内への材料の拡散およびエレクトロマイグレーションを阻止して、デバイスのサイクル寿命を改善する。典型的な層厚は以下の通りである。導電層40(100nm)、バリア層50(30nm)、制御電極70(10〜40nm)、バリア層100(100nm)、および導電層110(100nm)。本例デバイス中のカルコゲニド材料で占められた領域は、高さ約0.1ミクロン、直径約1ミクロンの円柱形状である。カルコゲニド材料で占められた領域は、ここでは孔または孔領域等と呼ぶこともできる。電極30、70および90はカルコゲニドと電気通信状態にあり、図2の図に示された端子に相当する。制御電極70はカルコゲニド材料80を囲んでいる。頂部電極90および底部電極30もまた、それぞれ負荷および基準電極と呼ぶことができる。好適な実施形態では、基準電極が接地されている。これらの電極は、電極間の電気通信がカルコゲニド材料を介して生じるように絶縁材料により分離されている。
この例では、図3に示した三端子デバイス構造の特性のいくつかのテストの結果が説明されている。ウエハー上に形成されたデバイスからランダムに選択されたいくつかの異なるデバイス上で完了された。図4には、本発明者が完了したテストのいくつかの結果が要約されている。図4は、本三端子デバイスに関してI−Vプロットの第1象限を示すものである。電流Iは構造の電荷(頂部)および基準(底部)電極間を通る電流に対応し、電圧Vは負荷および基準電極間に印加される電圧に対応する。負荷および基準電極間のI−V関係は制御電荷に印加されるいくつかの異なる制御電圧に対して決定される。テストでは、一定の大きさの制御電圧が制御端子に印加され、負荷および基準電極間の電流が負荷および基準電極間に印加される電圧の関数として測定される。制御電圧が印加される間に、制御電圧が長期間電圧パルス(例えば、3マイクロ秒)の形で印加され、負荷および基準電極間の電圧が短期間パルス(例えば、100ナノ秒)の形で印加される。この例では、制御電圧がデバイスの制御電極および負荷電極間に印加される。
Claims (13)
- 第1端子と、
第2端子と、
第3端子と、
前記第1端子、前記第2端子および前記第3端子と電気通信状態にあるカルコゲニド材料と
を備え、
前記カルコゲニド材料は、外側壁により離間される第1端及び第2端を含み、
前記第1端子は前記第1端に隣接して配置され、
前記第2端子は前記第2端に隣接して配置され、
前記第3端子は前記カルコゲニド材料を囲み、前記第3端子に制御信号を印加することによって前記第1端子および前記第2端子間の前記カルコゲニド材料の導電性を変調し、
前記第3端子が前記カルコゲニド材料を囲むことは、前記外側壁のまわりでなされ、かつ、前記外側壁沿いにおいて前記第1端と前記第2端との間の離間距離未満にわたる、電子スイッチングデバイス。 - 前記制御信号が電圧である、請求項1に記載のデバイス。
- 前記制御信号がカルコゲニド材料に与えられる、請求項1に記載のデバイス。
- 前記第1端子、前記第2端子または前記第3端子のいずれか2つの間の電気通信が前記カルコゲニド材料を介して生じる、請求項1に記載のデバイス。
- 前記カルコゲニド材料が抵抗状態と導電状態とを有し、閾値電圧を超える大きさを有する電圧を受けたときに前記カルコゲニド材料が前記抵抗状態から前記導電状態へと転換し、前記カルコゲニド材料が前記第1端子および前記第2端子間に前記閾値電圧を有する、請求項1に記載のデバイス。
- 前記制御信号が前記閾値電圧を変調する、請求項5に記載のデバイス。
- 前記閾値電圧の大きさが減少される、請求項6に記載のデバイス。
- 前記減少が少なくとも10%である、請求項7に記載のデバイス。
- 前記減少が少なくとも25%である、請求項7に記載のデバイス。
- 前記カルコゲニド材料がS、SeまたはTeからなる群から選択される元素を含む、請求項1に記載のデバイス。
- 前記カルコゲニド材料がGeまたはSbをさらに含む、請求項10に記載のデバイス。
- 前記カルコゲニド材料がAsまたはSiをさらに含む、請求項10に記載のデバイス。
- 第1素子と、第2素子と、前記第1素子および第2素子間の電気通信を制御し、請求項1のデバイスを含む相互接続素子とを備え、前記第1素子が前記第1端子と電気通信状態にあり、前記第2素子が前記第2端子と電気通信状態にある、回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/384,994 | 2003-03-10 | ||
US10/384,994 US6967344B2 (en) | 2003-03-10 | 2003-03-10 | Multi-terminal chalcogenide switching devices |
PCT/US2004/003111 WO2004081977A2 (en) | 2003-03-10 | 2004-02-04 | Multi-terminal chalcogenide switching devices |
Publications (2)
Publication Number | Publication Date |
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JP2007525816A JP2007525816A (ja) | 2007-09-06 |
JP5396002B2 true JP5396002B2 (ja) | 2014-01-22 |
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JP2006508659A Expired - Fee Related JP5396002B2 (ja) | 2003-03-10 | 2004-02-04 | 多端子カルコゲニドスイッチングデバイス |
Country Status (10)
Country | Link |
---|---|
US (1) | US6967344B2 (ja) |
EP (1) | EP1636825B1 (ja) |
JP (1) | JP5396002B2 (ja) |
KR (1) | KR101056078B1 (ja) |
CN (1) | CN100521279C (ja) |
BR (1) | BRPI0408230A (ja) |
CA (1) | CA2518246A1 (ja) |
MX (1) | MXPA05009600A (ja) |
TW (1) | TWI257724B (ja) |
WO (1) | WO2004081977A2 (ja) |
Families Citing this family (53)
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CN100382330C (zh) * | 2005-08-11 | 2008-04-16 | 上海交通大学 | 可实现多位存储的单元结构 |
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US7494849B2 (en) * | 2005-11-03 | 2009-02-24 | Cswitch Inc. | Methods for fabricating multi-terminal phase change devices |
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KR101330769B1 (ko) * | 2005-12-12 | 2013-11-18 | 오보닉스, 아이엔씨. | 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을갖는 재료 |
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CA2518246A1 (en) | 2004-09-23 |
JP2007525816A (ja) | 2007-09-06 |
EP1636825A2 (en) | 2006-03-22 |
KR20050110668A (ko) | 2005-11-23 |
WO2004081977A2 (en) | 2004-09-23 |
MXPA05009600A (es) | 2005-11-04 |
EP1636825A4 (en) | 2010-03-24 |
BRPI0408230A (pt) | 2006-02-21 |
US6967344B2 (en) | 2005-11-22 |
CN1993842A (zh) | 2007-07-04 |
CN100521279C (zh) | 2009-07-29 |
EP1636825B1 (en) | 2013-04-10 |
US20040178401A1 (en) | 2004-09-16 |
WO2004081977A3 (en) | 2006-10-26 |
TW200505066A (en) | 2005-02-01 |
KR101056078B1 (ko) | 2011-08-10 |
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