BRPI0408230A - dispositivo de comutação eletrÈnica, método de comutação eletrÈnica, e, circuito - Google Patents

dispositivo de comutação eletrÈnica, método de comutação eletrÈnica, e, circuito

Info

Publication number
BRPI0408230A
BRPI0408230A BRPI0408230-3A BRPI0408230A BRPI0408230A BR PI0408230 A BRPI0408230 A BR PI0408230A BR PI0408230 A BRPI0408230 A BR PI0408230A BR PI0408230 A BRPI0408230 A BR PI0408230A
Authority
BR
Brazil
Prior art keywords
electronic switching
devices
terminal
circuit
switching device
Prior art date
Application number
BRPI0408230-3A
Other languages
English (en)
Inventor
Stanford R Ovshinsky
Boil Pashmakov
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of BRPI0408230A publication Critical patent/BRPI0408230A/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Electronic Switches (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

"DISPOSITIVO DE COMUTAçãO ELETRÈNICA, MéTODO DE COMUTAçãO ELETRÈNICA, E, CIRCUITO". Dispositivos de comutação eletrónica de multi-terminal compreendendo um material de calcogeneto comutável entre um estado resistivo e um estado condutivo. Os dispositivos incluem um primeiro terminal, um segundo terminal e um terminal de controle. A aplicação de um sinal de controle ao terminal de controle modula a condutividade do material de calcogeneto entre os primeiro e segundo terminais de um estado resistivo a um estado condutivo. Os dispositivos podem ser usados como dispositivos de interconexão ou dispositivos de provisão de sinal em circuitos e redes.
BRPI0408230-3A 2003-03-10 2004-02-04 dispositivo de comutação eletrÈnica, método de comutação eletrÈnica, e, circuito BRPI0408230A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/384,994 US6967344B2 (en) 2003-03-10 2003-03-10 Multi-terminal chalcogenide switching devices
PCT/US2004/003111 WO2004081977A2 (en) 2003-03-10 2004-02-04 Multi-terminal chalcogenide switching devices

Publications (1)

Publication Number Publication Date
BRPI0408230A true BRPI0408230A (pt) 2006-02-21

Family

ID=32961414

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0408230-3A BRPI0408230A (pt) 2003-03-10 2004-02-04 dispositivo de comutação eletrÈnica, método de comutação eletrÈnica, e, circuito

Country Status (10)

Country Link
US (1) US6967344B2 (pt)
EP (1) EP1636825B1 (pt)
JP (1) JP5396002B2 (pt)
KR (1) KR101056078B1 (pt)
CN (1) CN100521279C (pt)
BR (1) BRPI0408230A (pt)
CA (1) CA2518246A1 (pt)
MX (1) MXPA05009600A (pt)
TW (1) TWI257724B (pt)
WO (1) WO2004081977A2 (pt)

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US20040257848A1 (en) * 2003-06-18 2004-12-23 Macronix International Co., Ltd. Method for adjusting the threshold voltage of a memory cell
US7381611B2 (en) * 2003-08-04 2008-06-03 Intel Corporation Multilayered phase change memory
US7485891B2 (en) * 2003-11-20 2009-02-03 International Business Machines Corporation Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
DE102004037450B4 (de) * 2004-08-02 2009-04-16 Qimonda Ag Verfahren zum Betrieb eines Schalt-Bauelements
US20080286446A1 (en) * 2005-01-28 2008-11-20 Smuruthi Kamepalli Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials
US20060172067A1 (en) * 2005-01-28 2006-08-03 Energy Conversion Devices, Inc Chemical vapor deposition of chalcogenide materials
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7525117B2 (en) * 2005-08-09 2009-04-28 Ovonyx, Inc. Chalcogenide devices and materials having reduced germanium or telluruim content
CN100382330C (zh) * 2005-08-11 2008-04-16 上海交通大学 可实现多位存储的单元结构
US8183551B2 (en) * 2005-11-03 2012-05-22 Agale Logic, Inc. Multi-terminal phase change devices
US7511532B2 (en) 2005-11-03 2009-03-31 Cswitch Corp. Reconfigurable logic structures
US7675765B2 (en) 2005-11-03 2010-03-09 Agate Logic, Inc. Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM
US7746682B2 (en) * 2005-11-03 2010-06-29 Agata Logic Inc. SEU hardened latches and memory cells using programmable resistance devices
US7494849B2 (en) * 2005-11-03 2009-02-24 Cswitch Inc. Methods for fabricating multi-terminal phase change devices
US8222917B2 (en) * 2005-11-03 2012-07-17 Agate Logic, Inc. Impedance matching and trimming apparatuses and methods using programmable resistance devices
US7741638B2 (en) * 2005-11-23 2010-06-22 Hewlett-Packard Development Company, L.P. Control layer for a nanoscale electronic switching device
KR101501980B1 (ko) * 2005-12-12 2015-03-18 오보닉스, 아이엔씨. 칼코겐화물 소자 및 감소된 저매늄 또는 텔러륨 함량을 갖는 재료
US7754603B2 (en) * 2006-05-22 2010-07-13 Ovonyx, Inc. Multi-functional chalcogenide electronic devices having gain
US7547906B2 (en) * 2006-05-22 2009-06-16 Ovonyx, Inc. Multi-functional chalcogenide electronic devices having gain
US7969769B2 (en) * 2007-03-15 2011-06-28 Ovonyx, Inc. Multi-terminal chalcogenide logic circuits
US7687309B2 (en) * 2007-06-28 2010-03-30 International Business Machines Corporation CMOS-process-compatible programmable via device
US7772582B2 (en) * 2007-07-11 2010-08-10 International Business Machines Corporation Four-terminal reconfigurable devices
US7659534B2 (en) * 2007-08-03 2010-02-09 International Business Machines Corporation Programmable via devices with air gap isolation
US7969770B2 (en) * 2007-08-03 2011-06-28 International Business Machines Corporation Programmable via devices in back end of line level
JP4621897B2 (ja) 2007-08-31 2011-01-26 独立行政法人産業技術総合研究所 固体メモリ
JP4595125B2 (ja) 2007-08-31 2010-12-08 独立行政法人産業技術総合研究所 固体メモリ
US8228719B2 (en) * 2008-06-06 2012-07-24 Ovonyx, Inc. Thin film input/output
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US8148707B2 (en) 2008-12-30 2012-04-03 Stmicroelectronics S.R.L. Ovonic threshold switch film composition for TSLAGS material
US8377741B2 (en) * 2008-12-30 2013-02-19 Stmicroelectronics S.R.L. Self-heating phase change memory cell architecture
US7939815B2 (en) * 2008-12-30 2011-05-10 Stmicroelectronics S.R.L. Forming a carbon passivated ovonic threshold switch
US8546785B2 (en) 2010-03-31 2013-10-01 Hewlett-Packard Development Company, L.P. Memristive device
US8345472B2 (en) 2010-12-21 2013-01-01 Intel Corporation Three-terminal ovonic threshold switch as a current driver in a phase change memory
FR2977077B1 (fr) * 2011-06-27 2013-08-02 Commissariat Energie Atomique Generateur de retards utilisant une resistance programmable a base de materiau a changement de phase
US8737114B2 (en) * 2012-05-07 2014-05-27 Micron Technology, Inc. Switching device structures and methods
US9019743B2 (en) * 2012-11-29 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for resistive switching random access memory with high reliable and high density
WO2015163972A2 (en) * 2014-02-14 2015-10-29 Hrl Laboratories, Llc A reconfigurable electromagnetic surface of pixelated metal patches
US20160005965A1 (en) * 2014-07-01 2016-01-07 Micron Technology, Inc. Memory cells having a first selecting chalcogenide material and a second selecting chalcogenide material and methods therof
US9406881B1 (en) 2015-04-24 2016-08-02 Micron Technology, Inc. Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same
KR102608887B1 (ko) * 2016-08-10 2023-12-04 에스케이하이닉스 주식회사 반도체 장치
WO2018066320A1 (ja) * 2016-10-04 2018-04-12 ソニーセミコンダクタソリューションズ株式会社 スイッチ素子および記憶装置ならびにメモリシステム
KR102295524B1 (ko) * 2017-03-27 2021-08-30 삼성전자 주식회사 메모리 소자
US10541271B2 (en) 2017-10-18 2020-01-21 Macronix International Co., Ltd. Superlattice-like switching devices
EP3570339B1 (en) 2018-05-17 2020-12-30 IMEC vzw Switching device with active portion switching from insulating state to conducting state
US10374009B1 (en) 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
US10943952B2 (en) * 2019-06-10 2021-03-09 Sandisk Technologies Llc Threshold switch for memory
CN110783454B (zh) * 2019-09-24 2021-03-09 华中科技大学 纳米级相变存储器单元电极配置结构的加工方法
CN110767802B (zh) * 2019-09-24 2021-03-09 华中科技大学 用于纳米级相变存储器单元的电极配置结构
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Also Published As

Publication number Publication date
JP5396002B2 (ja) 2014-01-22
EP1636825A4 (en) 2010-03-24
CN1993842A (zh) 2007-07-04
JP2007525816A (ja) 2007-09-06
EP1636825B1 (en) 2013-04-10
US20040178401A1 (en) 2004-09-16
KR101056078B1 (ko) 2011-08-10
MXPA05009600A (es) 2005-11-04
US6967344B2 (en) 2005-11-22
CA2518246A1 (en) 2004-09-23
TW200505066A (en) 2005-02-01
WO2004081977A2 (en) 2004-09-23
TWI257724B (en) 2006-07-01
WO2004081977A3 (en) 2006-10-26
KR20050110668A (ko) 2005-11-23
EP1636825A2 (en) 2006-03-22
CN100521279C (zh) 2009-07-29

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AO NAO RECOLHIMENTO DA 6A, 7A, 8A, 9A, 10A, 11A E 12A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2387 DE 04-10-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.