JP5395384B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP5395384B2
JP5395384B2 JP2008218503A JP2008218503A JP5395384B2 JP 5395384 B2 JP5395384 B2 JP 5395384B2 JP 2008218503 A JP2008218503 A JP 2008218503A JP 2008218503 A JP2008218503 A JP 2008218503A JP 5395384 B2 JP5395384 B2 JP 5395384B2
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film
semiconductor film
region
microcrystalline semiconductor
thin film
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JP2008218503A
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Japanese (ja)
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JP2009081425A (ja
JP2009081425A5 (https=
Inventor
聡 小林
郁子 川俣
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2009081425A5 publication Critical patent/JP2009081425A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP2008218503A 2007-09-07 2008-08-27 薄膜トランジスタの作製方法 Expired - Fee Related JP5395384B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008218503A JP5395384B2 (ja) 2007-09-07 2008-08-27 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007232667 2007-09-07
JP2007232667 2007-09-07
JP2008218503A JP5395384B2 (ja) 2007-09-07 2008-08-27 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2009081425A JP2009081425A (ja) 2009-04-16
JP2009081425A5 JP2009081425A5 (https=) 2011-10-13
JP5395384B2 true JP5395384B2 (ja) 2014-01-22

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US (2) US7791075B2 (https=)
JP (1) JP5395384B2 (https=)

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US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
KR101981441B1 (ko) * 2009-07-31 2019-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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KR102369012B1 (ko) 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
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KR102480794B1 (ko) 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
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WO2013183254A1 (ja) * 2012-06-08 2013-12-12 パナソニック株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP6085758B2 (ja) * 2012-06-08 2017-03-01 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び薄膜トランジスタの製造方法
CN102738007B (zh) * 2012-07-02 2014-09-03 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN102931091A (zh) * 2012-10-25 2013-02-13 深圳市华星光电技术有限公司 一种主动矩阵式平面显示装置、薄膜晶体管及其制作方法
KR102072099B1 (ko) * 2012-11-08 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 막 및 금속 산화물 막의 형성 방법
CN103887343B (zh) * 2012-12-21 2017-06-09 北京京东方光电科技有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
KR20240042562A (ko) * 2013-12-26 2024-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9876110B2 (en) 2014-01-31 2018-01-23 Stmicroelectronics, Inc. High dose implantation for ultrathin semiconductor-on-insulator substrates
CN103824779A (zh) * 2014-02-18 2014-05-28 北京京东方显示技术有限公司 一种薄膜晶体管及其制作方法、tft阵列基板、显示装置
US9793361B2 (en) * 2014-09-10 2017-10-17 Boe Technology Group Co., Ltd. Thin film transistor, array substrate and display device
US9685560B2 (en) * 2015-03-02 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Transistor, method for manufacturing transistor, semiconductor device, and electronic device
CN106876476B (zh) * 2017-02-16 2020-04-17 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及电子设备
CN116406106B (zh) * 2023-02-22 2025-09-09 华为技术有限公司 壳体结构、壳体、电子设备及壳体结构的制备方法

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US8420462B2 (en) 2013-04-16
JP2009081425A (ja) 2009-04-16
US20090065784A1 (en) 2009-03-12
US7791075B2 (en) 2010-09-07
US20100304515A1 (en) 2010-12-02

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