JP5394617B2 - 半導体装置及び半導体装置の製造方法及び基板 - Google Patents

半導体装置及び半導体装置の製造方法及び基板 Download PDF

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Publication number
JP5394617B2
JP5394617B2 JP2007157807A JP2007157807A JP5394617B2 JP 5394617 B2 JP5394617 B2 JP 5394617B2 JP 2007157807 A JP2007157807 A JP 2007157807A JP 2007157807 A JP2007157807 A JP 2007157807A JP 5394617 B2 JP5394617 B2 JP 5394617B2
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Japan
Prior art keywords
layer
semiconductor substrate
electrode
semiconductor
region
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JP2007157807A
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English (en)
Japanese (ja)
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JP2008021987A (ja
JP2008021987A5 (enExample
Inventor
啓 村山
光敏 東
直幸 小泉
裕一 田口
晶紀 白石
昌宏 春原
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2007157807A priority Critical patent/JP5394617B2/ja
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Publication of JP2008021987A5 publication Critical patent/JP2008021987A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

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JP2007157807A 2006-06-16 2007-06-14 半導体装置及び半導体装置の製造方法及び基板 Active JP5394617B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007157807A JP5394617B2 (ja) 2006-06-16 2007-06-14 半導体装置及び半導体装置の製造方法及び基板

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006168166 2006-06-16
JP2006168166 2006-06-16
JP2007157807A JP5394617B2 (ja) 2006-06-16 2007-06-14 半導体装置及び半導体装置の製造方法及び基板

Publications (3)

Publication Number Publication Date
JP2008021987A JP2008021987A (ja) 2008-01-31
JP2008021987A5 JP2008021987A5 (enExample) 2010-07-08
JP5394617B2 true JP5394617B2 (ja) 2014-01-22

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JP2007157807A Active JP5394617B2 (ja) 2006-06-16 2007-06-14 半導体装置及び半導体装置の製造方法及び基板

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JP (1) JP5394617B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008049777A1 (de) * 2008-05-23 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
JP5419525B2 (ja) * 2009-04-06 2014-02-19 新光電気工業株式会社 半導体装置及びその製造方法
US8598684B2 (en) 2009-04-06 2013-12-03 Shinko Electric Industries Co., Ltd. Semiconductor device, and method of manufacturing the same
JP5419547B2 (ja) * 2009-05-28 2014-02-19 新光電気工業株式会社 半導体装置及びその製造方法
WO2012086517A1 (ja) 2010-12-20 2012-06-28 ローム株式会社 発光素子ユニットおよび発光素子パッケージ
DE102010056056A1 (de) * 2010-12-23 2012-06-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines elektrischen Anschlussträgers
WO2012155984A1 (de) 2011-05-19 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen
JP5919943B2 (ja) * 2012-03-27 2016-05-18 凸版印刷株式会社 シリコンインターポーザ
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung
WO2013187319A1 (ja) * 2012-06-12 2013-12-19 株式会社村田製作所 実装基板及び発光装置
JP2013258241A (ja) * 2012-06-12 2013-12-26 Murata Mfg Co Ltd 発光装置
WO2014024108A1 (en) * 2012-08-07 2014-02-13 Koninklijke Philips N.V. Led package and manufacturing method
JP2014220361A (ja) * 2013-05-08 2014-11-20 株式会社東芝 静電気保護素子および発光モジュール
JP5836346B2 (ja) * 2013-10-04 2015-12-24 有限会社 ナプラ 配線基板及び電子デバイス
JP6539035B2 (ja) 2014-01-08 2019-07-03 ローム株式会社 チップ部品
TWI501363B (zh) * 2014-01-10 2015-09-21 立昌先進科技股份有限公司 一種小型化表面黏著型二極體封裝元件及其製法
DE102014105188A1 (de) * 2014-04-11 2015-10-15 Osram Opto Semiconductors Gmbh Halbleiterchip, optoelektronisches Bauelement mit Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP5877487B1 (ja) * 2014-12-26 2016-03-08 パナソニックＩｐマネジメント株式会社 発光装置
JP5838357B1 (ja) * 2015-01-13 2016-01-06 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
JP6801950B2 (ja) * 2015-04-15 2020-12-16 ショット日本株式会社 貫通電極基板および半導体パッケージ
JP6736260B2 (ja) * 2015-05-13 2020-08-05 ローム株式会社 半導体発光装置
KR102412600B1 (ko) * 2015-07-03 2022-06-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 발광 모듈
JP6662716B2 (ja) * 2016-06-08 2020-03-11 新光電気工業株式会社 光センサ、光センサの製造方法
JP6732586B2 (ja) * 2016-07-28 2020-07-29 ローム株式会社 Ｌｅｄパッケージ
JP7672279B2 (ja) 2021-05-20 2025-05-07 スタンレー電気株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3911839B2 (ja) * 1998-04-08 2007-05-09 松下電器産業株式会社 半導体発光装置
JP2000012913A (ja) * 1998-06-19 2000-01-14 Matsushita Electron Corp 半導体発光装置に用いる静電気保護用ダイオード及びその製造方法
US6617681B1 (en) * 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same
EP1617473A1 (en) * 2004-07-13 2006-01-18 Koninklijke Philips Electronics N.V. Electronic device comprising an ESD device

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