JP5390380B2 - 半導体接合のための装置及び方法 - Google Patents

半導体接合のための装置及び方法 Download PDF

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Publication number
JP5390380B2
JP5390380B2 JP2009516742A JP2009516742A JP5390380B2 JP 5390380 B2 JP5390380 B2 JP 5390380B2 JP 2009516742 A JP2009516742 A JP 2009516742A JP 2009516742 A JP2009516742 A JP 2009516742A JP 5390380 B2 JP5390380 B2 JP 5390380B2
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semiconductor structure
bonding
semiconductor
wafer
interface area
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JP2009542012A5 (enExample
JP2009542012A (ja
Inventor
ジョージ，グレゴリー
ハンコック，エティエン
キャンベル，ロバート
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スス マイクロテク リソグラフィー，ゲーエムベーハー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
JP2009516742A 2006-06-22 2007-06-22 半導体接合のための装置及び方法 Active JP5390380B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81561906P 2006-06-22 2006-06-22
US60/815,619 2006-06-22
US11/766,531 US7948034B2 (en) 2006-06-22 2007-06-21 Apparatus and method for semiconductor bonding
US11/766,531 2007-06-21
PCT/US2007/071857 WO2007150012A2 (en) 2006-06-22 2007-06-22 Apparatus and method for semiconductor bonding

Publications (3)

Publication Number Publication Date
JP2009542012A JP2009542012A (ja) 2009-11-26
JP2009542012A5 JP2009542012A5 (enExample) 2010-07-15
JP5390380B2 true JP5390380B2 (ja) 2014-01-15

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Family Applications (1)

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JP2009516742A Active JP5390380B2 (ja) 2006-06-22 2007-06-22 半導体接合のための装置及び方法

Country Status (5)

Country Link
US (1) US7948034B2 (enExample)
EP (1) EP2030229B1 (enExample)
JP (1) JP5390380B2 (enExample)
KR (1) KR101414399B1 (enExample)
WO (1) WO2007150012A2 (enExample)

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JPWO2011036900A1 (ja) * 2009-09-28 2013-02-14 株式会社ニコン 加圧モジュール、加圧装置、基板貼り合せ装置、基板貼り合せ方法および貼り合せ基板
US8640755B2 (en) 2010-10-05 2014-02-04 Skyworks Solutions, Inc. Securing mechanism and method for wafer bonder
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JP5411177B2 (ja) * 2011-02-24 2014-02-12 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
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US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
CN105405793A (zh) * 2015-12-08 2016-03-16 中国科学院半导体研究所 均匀轴向力承片装置
TWI701708B (zh) * 2016-02-24 2020-08-11 德商蘇士微科技印刷術股份有限公司 半導體接合設備及相關技術
US10410892B2 (en) * 2016-11-18 2019-09-10 Taiwan Semiconductor Manufacturing Company Ltd. Method of semiconductor wafer bonding and system thereof
WO2019079281A1 (en) 2017-10-17 2019-04-25 Molekule Inc. SYSTEM AND METHOD FOR PHOTOELECTROCHEMICAL AIR PURIFICATION
KR102576705B1 (ko) * 2018-08-30 2023-09-08 삼성전자주식회사 기판 본딩 장치 및 기판의 본딩 방법
KR102619624B1 (ko) 2018-11-13 2023-12-29 삼성전자주식회사 기판합착 장치 및 방법
US11097525B1 (en) 2020-02-03 2021-08-24 Molekule, Inc. Filter media and system and method for manufacture thereof
WO2022047421A1 (en) 2020-08-31 2022-03-03 Molekule, Inc. Air filter and filter media thereof
KR102840203B1 (ko) 2020-09-01 2025-08-01 삼성전자주식회사 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비
KR102830238B1 (ko) 2020-09-01 2025-07-04 삼성전자주식회사 레이저 본딩 시스템 및 레이저 본딩 장치
TWI874823B (zh) 2021-10-14 2025-03-01 德商平克塞莫系統有限公司 多功能設備和衝壓工具
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CN114361063B (zh) * 2021-11-24 2024-12-13 苏州科阳半导体有限公司 基板键合方法及基板
TWI769957B (zh) * 2021-11-25 2022-07-01 天虹科技股份有限公司 基板鍵合機台
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Also Published As

Publication number Publication date
KR20090034871A (ko) 2009-04-08
EP2030229A2 (en) 2009-03-04
WO2007150012A2 (en) 2007-12-27
EP2030229A4 (en) 2011-10-19
KR101414399B1 (ko) 2014-07-01
WO2007150012A3 (en) 2008-02-21
EP2030229B1 (en) 2018-05-02
JP2009542012A (ja) 2009-11-26
US7948034B2 (en) 2011-05-24
US20070296035A1 (en) 2007-12-27

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