KR101414399B1 - 반도체 접합 장치 및 방법 - Google Patents

반도체 접합 장치 및 방법 Download PDF

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KR101414399B1
KR101414399B1 KR1020097000673A KR20097000673A KR101414399B1 KR 101414399 B1 KR101414399 B1 KR 101414399B1 KR 1020097000673 A KR1020097000673 A KR 1020097000673A KR 20097000673 A KR20097000673 A KR 20097000673A KR 101414399 B1 KR101414399 B1 KR 101414399B1
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bonding
semiconductor
wafer
chamber
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KR20090034871A (ko
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그레고리 죠지
에띠엔느 핸콕
로버트 캠벨
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수스 마이크로텍 리소그라피 게엠바하
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
KR1020097000673A 2006-06-22 2007-06-22 반도체 접합 장치 및 방법 Active KR101414399B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81561906P 2006-06-22 2006-06-22
US60/815,619 2006-06-22
US11/766,531 US7948034B2 (en) 2006-06-22 2007-06-21 Apparatus and method for semiconductor bonding
US11/766,531 2007-06-21
PCT/US2007/071857 WO2007150012A2 (en) 2006-06-22 2007-06-22 Apparatus and method for semiconductor bonding

Publications (2)

Publication Number Publication Date
KR20090034871A KR20090034871A (ko) 2009-04-08
KR101414399B1 true KR101414399B1 (ko) 2014-07-01

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Country Link
US (1) US7948034B2 (enExample)
EP (1) EP2030229B1 (enExample)
JP (1) JP5390380B2 (enExample)
KR (1) KR101414399B1 (enExample)
WO (1) WO2007150012A2 (enExample)

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DE102006058493B4 (de) * 2006-12-12 2012-03-22 Erich Thallner Verfahren und Vorrichtung zum Bonden von Wafern
US7939424B2 (en) 2007-09-21 2011-05-10 Varian Semiconductor Equipment Associates, Inc. Wafer bonding activated by ion implantation
JP5320736B2 (ja) * 2007-12-28 2013-10-23 株式会社ニコン 半導体ウエハ貼り合わせ装置
US8139219B2 (en) * 2008-04-02 2012-03-20 Suss Microtec Lithography, Gmbh Apparatus and method for semiconductor wafer alignment
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WO2010057068A2 (en) * 2008-11-16 2010-05-20 Suss Microtec, Inc. Method and apparatus for wafer bonding with enhanced wafer mating
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
JPWO2011036900A1 (ja) * 2009-09-28 2013-02-14 株式会社ニコン 加圧モジュール、加圧装置、基板貼り合せ装置、基板貼り合せ方法および貼り合せ基板
US8640755B2 (en) 2010-10-05 2014-02-04 Skyworks Solutions, Inc. Securing mechanism and method for wafer bonder
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5411177B2 (ja) * 2011-02-24 2014-02-12 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
TWI578409B (zh) * 2011-12-08 2017-04-11 尼康股份有限公司 A pressing device, a substrate bonding device and a superimposing substrate
CN102646620B (zh) * 2012-05-08 2015-02-18 中国科学院半导体研究所 硅基iii-v外延材料图形异质键合均匀轴向力施力装置
NL2010252C2 (en) 2013-02-06 2014-08-07 Boschman Tech Bv Semiconductor product processing method, including a semiconductor product encapsulation method and a semiconductor product carrier-mounting method, and corresponding semiconductor product processing apparatus.
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10121760B2 (en) 2013-11-01 2018-11-06 Nikon Corporation Wafer bonding system and method
US9418830B2 (en) 2014-06-27 2016-08-16 Freescale Semiconductor, Inc. Methods for bonding semiconductor wafers
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US10825705B2 (en) 2015-05-15 2020-11-03 Suss Microtec Lithography Gmbh Apparatus, system, and method for handling aligned wafer pairs
US11183401B2 (en) 2015-05-15 2021-11-23 Suss Microtec Lithography Gmbh System and related techniques for handling aligned substrate pairs
CN106710442B (zh) * 2015-10-21 2021-01-22 京东方科技集团股份有限公司 背光源分离设备
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
CN105405793A (zh) * 2015-12-08 2016-03-16 中国科学院半导体研究所 均匀轴向力承片装置
TWI701708B (zh) * 2016-02-24 2020-08-11 德商蘇士微科技印刷術股份有限公司 半導體接合設備及相關技術
US10410892B2 (en) * 2016-11-18 2019-09-10 Taiwan Semiconductor Manufacturing Company Ltd. Method of semiconductor wafer bonding and system thereof
WO2019079281A1 (en) 2017-10-17 2019-04-25 Molekule Inc. SYSTEM AND METHOD FOR PHOTOELECTROCHEMICAL AIR PURIFICATION
KR102576705B1 (ko) * 2018-08-30 2023-09-08 삼성전자주식회사 기판 본딩 장치 및 기판의 본딩 방법
KR102619624B1 (ko) 2018-11-13 2023-12-29 삼성전자주식회사 기판합착 장치 및 방법
US11097525B1 (en) 2020-02-03 2021-08-24 Molekule, Inc. Filter media and system and method for manufacture thereof
WO2022047421A1 (en) 2020-08-31 2022-03-03 Molekule, Inc. Air filter and filter media thereof
KR102840203B1 (ko) 2020-09-01 2025-08-01 삼성전자주식회사 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비
KR102830238B1 (ko) 2020-09-01 2025-07-04 삼성전자주식회사 레이저 본딩 시스템 및 레이저 본딩 장치
TWI874823B (zh) 2021-10-14 2025-03-01 德商平克塞莫系統有限公司 多功能設備和衝壓工具
DE102021126716B3 (de) 2021-10-14 2022-09-01 Pink Gmbh Thermosysteme Multifunktionale sinter- oder diffusionslötvorrichtung und presswerkzeug
CN114361063B (zh) * 2021-11-24 2024-12-13 苏州科阳半导体有限公司 基板键合方法及基板
TWI769957B (zh) * 2021-11-25 2022-07-01 天虹科技股份有限公司 基板鍵合機台
DE102022107462A1 (de) 2022-03-29 2023-10-05 Pva Industrial Vacuum Systems Gmbh Hochtemperatur-Fügeofen
US20230360940A1 (en) * 2022-05-03 2023-11-09 Applied Materials, Inc. Wafer film frame carrier

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JP2005294824A (ja) * 2004-03-12 2005-10-20 Bondotekku:Kk 真空中での超音波接合方法及び装置

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JP2005294824A (ja) * 2004-03-12 2005-10-20 Bondotekku:Kk 真空中での超音波接合方法及び装置

Also Published As

Publication number Publication date
KR20090034871A (ko) 2009-04-08
EP2030229A2 (en) 2009-03-04
WO2007150012A2 (en) 2007-12-27
EP2030229A4 (en) 2011-10-19
WO2007150012A3 (en) 2008-02-21
EP2030229B1 (en) 2018-05-02
JP5390380B2 (ja) 2014-01-15
JP2009542012A (ja) 2009-11-26
US7948034B2 (en) 2011-05-24
US20070296035A1 (en) 2007-12-27

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