JP5389073B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5389073B2 JP5389073B2 JP2011033210A JP2011033210A JP5389073B2 JP 5389073 B2 JP5389073 B2 JP 5389073B2 JP 2011033210 A JP2011033210 A JP 2011033210A JP 2011033210 A JP2011033210 A JP 2011033210A JP 5389073 B2 JP5389073 B2 JP 5389073B2
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- Prior art keywords
- wiring
- sacrificial
- semiconductor device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1に、本実施形態の半導体装置における配線パターンの上面図を示す。図1に示すように、例えば幅0.5μm以上の太幅配線11が、例えば幅0.1μm未満の細幅配線12と、切り欠き部11aの近傍で接続部12aにおいて接続されている。太幅配線11には、切り欠き部11aが設けられており、切り欠き部11a内で、太幅配線11と犠牲的配線13が、その端部である接続部13aにおいて接続されている。
本実施形態においては、犠牲的配線を、太幅配線に切り欠き部を設けることなく配置している点で、実施形態1と異なっている。
Claims (5)
- 一部に切り欠き部を有する第1の配線と、
前記第1の配線と接続され、前記第1の配線より細幅の第2の配線と、
前記第1の配線の前記切り欠き部内に配置されるとともに、一方の端部が前記第1の配線と接続され、他方の端部より局所的に細幅となる中間部を有する犠牲的配線と、
を備えることを特徴とする半導体装置。 - 前記犠牲的配線は、前記第1の配線と前記第2の配線との接続部と、前記第1の配線と前記犠牲的配線との接続部と、の距離が、前記第1の配線の配線幅以下となる位置において、前記第1の配線に接続されることを特徴とする請求項1に記載の半導体装置。
- 前記犠牲的配線は、前記第1の配線以外の配線、又はビアコンタクトと直接接続されていないことを特徴とする請求項1又は請求項2に記載の半導体装置。
- 前記犠牲的配線は、前記他方の端部の配線幅が、前記第2の配線より太幅で、前記中間部が前記第2の配線の配線幅より細いことを特徴とする請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記犠牲的配線は、前記第2の配線と間隙を有して平行に配置されることを特徴とする請求項1から請求項4のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011033210A JP5389073B2 (ja) | 2011-02-18 | 2011-02-18 | 半導体装置 |
US13/356,139 US8723331B2 (en) | 2011-02-18 | 2012-01-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011033210A JP5389073B2 (ja) | 2011-02-18 | 2011-02-18 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012174773A JP2012174773A (ja) | 2012-09-10 |
JP5389073B2 true JP5389073B2 (ja) | 2014-01-15 |
Family
ID=46652087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011033210A Expired - Fee Related JP5389073B2 (ja) | 2011-02-18 | 2011-02-18 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8723331B2 (ja) |
JP (1) | JP5389073B2 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2590553B2 (ja) * | 1987-12-07 | 1997-03-12 | 日本電気株式会社 | 半導体装置 |
JP2005259968A (ja) * | 2004-03-11 | 2005-09-22 | Toshiba Corp | 半導体装置 |
JP2007294586A (ja) * | 2006-04-24 | 2007-11-08 | Toshiba Corp | 半導体装置 |
JP4731456B2 (ja) | 2006-12-19 | 2011-07-27 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP5251153B2 (ja) | 2008-02-07 | 2013-07-31 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8304900B2 (en) * | 2010-08-11 | 2012-11-06 | Stats Chippac Ltd. | Integrated circuit packaging system with stacked lead and method of manufacture thereof |
-
2011
- 2011-02-18 JP JP2011033210A patent/JP5389073B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-23 US US13/356,139 patent/US8723331B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012174773A (ja) | 2012-09-10 |
US8723331B2 (en) | 2014-05-13 |
US20120211898A1 (en) | 2012-08-23 |
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