JP5383313B2 - 窒化物半導体発光装置 - Google Patents

窒化物半導体発光装置 Download PDF

Info

Publication number
JP5383313B2
JP5383313B2 JP2009122287A JP2009122287A JP5383313B2 JP 5383313 B2 JP5383313 B2 JP 5383313B2 JP 2009122287 A JP2009122287 A JP 2009122287A JP 2009122287 A JP2009122287 A JP 2009122287A JP 5383313 B2 JP5383313 B2 JP 5383313B2
Authority
JP
Japan
Prior art keywords
film
light emitting
face
protective film
aln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009122287A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010272641A (ja
JP2010272641A5 (OSRAM
Inventor
真治 吉田
賢児 折田
義晃 長谷川
篤範 持田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2009122287A priority Critical patent/JP5383313B2/ja
Priority to CN201080021734.8A priority patent/CN102484354B/zh
Priority to PCT/JP2010/000262 priority patent/WO2010134229A1/ja
Publication of JP2010272641A publication Critical patent/JP2010272641A/ja
Priority to US13/294,682 priority patent/US8437376B2/en
Publication of JP2010272641A5 publication Critical patent/JP2010272641A5/ja
Application granted granted Critical
Publication of JP5383313B2 publication Critical patent/JP5383313B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2009122287A 2009-05-20 2009-05-20 窒化物半導体発光装置 Active JP5383313B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009122287A JP5383313B2 (ja) 2009-05-20 2009-05-20 窒化物半導体発光装置
CN201080021734.8A CN102484354B (zh) 2009-05-20 2010-01-19 氮化物半导体发光装置
PCT/JP2010/000262 WO2010134229A1 (ja) 2009-05-20 2010-01-19 窒化物半導体発光装置
US13/294,682 US8437376B2 (en) 2009-05-20 2011-11-11 Nitride semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009122287A JP5383313B2 (ja) 2009-05-20 2009-05-20 窒化物半導体発光装置

Publications (3)

Publication Number Publication Date
JP2010272641A JP2010272641A (ja) 2010-12-02
JP2010272641A5 JP2010272641A5 (OSRAM) 2012-04-26
JP5383313B2 true JP5383313B2 (ja) 2014-01-08

Family

ID=43125923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009122287A Active JP5383313B2 (ja) 2009-05-20 2009-05-20 窒化物半導体発光装置

Country Status (4)

Country Link
US (1) US8437376B2 (OSRAM)
JP (1) JP5383313B2 (OSRAM)
CN (1) CN102484354B (OSRAM)
WO (1) WO2010134229A1 (OSRAM)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6085150B2 (ja) * 2012-03-16 2017-02-22 株式会社日立ハイテクサイエンス 試料作製装置及び試料作製方法
DE102012102306B4 (de) * 2012-03-19 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012102305B4 (de) * 2012-03-19 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012025880B4 (de) 2012-03-19 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
US8737445B2 (en) * 2012-04-04 2014-05-27 Osram Opto Semiconductors Gmbh Laser diode assembly
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
KR102091843B1 (ko) * 2012-06-25 2020-03-20 서울바이오시스 주식회사 ｍ면 질화물계 발광다이오드의 제조 방법
JP5491679B1 (ja) * 2012-06-29 2014-05-14 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) * 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
CN107849683B (zh) * 2015-07-15 2020-09-01 住友电气工业株式会社 被膜
JP2017143139A (ja) * 2016-02-09 2017-08-17 株式会社東芝 半導体装置およびその製造方法
EP3564404B1 (en) * 2016-12-28 2023-03-15 Sumitomo Electric Industries, Ltd. Coating
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
JP7296934B2 (ja) * 2018-02-14 2023-06-23 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子及び照明光源モジュール
GB2584150B (en) 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
JP7438476B2 (ja) * 2019-08-20 2024-02-27 日亜化学工業株式会社 半導体レーザ装置及びその製造方法
CN115373072B (zh) * 2021-05-21 2025-12-02 中国科学院半导体研究所 c轴择优取向氧化锌镁脊型波导及制作方法
JP2023005918A (ja) * 2021-06-29 2023-01-18 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体発光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288287A (ja) * 1989-04-27 1990-11-28 Sharp Corp 半導体レーザ素子
WO2003043150A1 (en) 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
AU2002347692C1 (en) 2001-10-26 2008-03-06 Ammono Sp. Zo.O. Bulk monocrystalline gallium nitride
WO2004004085A2 (en) 2002-06-26 2004-01-08 Ammono Sp.Zo.O. Nitride semiconductor laser device and a method for improving its performance
CN1805230B (zh) * 2004-12-20 2011-06-01 夏普株式会社 氮化物半导体发光元件及其制造方法
JP4451371B2 (ja) 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP2007201373A (ja) 2006-01-30 2007-08-09 Sharp Corp 半導体レーザ素子
JP4444304B2 (ja) 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5042609B2 (ja) 2006-12-08 2012-10-03 シャープ株式会社 窒化物系半導体素子
JP4978454B2 (ja) 2006-12-28 2012-07-18 日亜化学工業株式会社 窒化物半導体レーザ素子
US7646798B2 (en) * 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
US7804872B2 (en) 2007-06-07 2010-09-28 Nichia Corporation Nitride semiconductor laser element
JP5572919B2 (ja) * 2007-06-07 2014-08-20 日亜化学工業株式会社 窒化物半導体レーザ素子

Also Published As

Publication number Publication date
US20120057612A1 (en) 2012-03-08
JP2010272641A (ja) 2010-12-02
US8437376B2 (en) 2013-05-07
CN102484354A (zh) 2012-05-30
CN102484354B (zh) 2014-08-27
WO2010134229A1 (ja) 2010-11-25

Similar Documents

Publication Publication Date Title
JP5383313B2 (ja) 窒化物半導体発光装置
JP5491679B1 (ja) 窒化物半導体発光素子
WO2002103865A1 (en) Semiconductor laser device and its manufacturing method
US7759684B2 (en) Nitride semiconductor light emitting device and method for fabricating the same
US8571083B2 (en) Nitride semiconductor laser chip
US7602829B2 (en) Semiconductor light emitting device and method of manufacturing same
WO2014097508A1 (ja) 窒化物半導体レーザ素子
US20130070801A1 (en) Semiconductor laser device and method of manufacturing the same
JP5735216B2 (ja) 窒化物半導体レーザ素子
JP5343687B2 (ja) 窒化物半導体レーザ素子
KR101407885B1 (ko) 질화물 반도체 레이저 소자
JP5670009B2 (ja) 窒化物半導体レーザ素子
US20100133582A1 (en) Nitride semiconductor light emitting device
JP3989244B2 (ja) 窒化物半導体レーザ素子および光記録再生装置
JP2010062300A (ja) 窒化物半導体素子およびその製造方法
JP2008300802A (ja) 半導体レーザ素子およびその製造方法
JP4035021B2 (ja) 半導体レーザ装置、光ディスク装置及び光集積化装置
US7633983B2 (en) Semiconductor laser device
JP2002124702A (ja) 窒化ガリウム系半導体発光素子
JP4066317B2 (ja) 半導体レーザ素子、その製造方法及び光ディスク装置
JP2011119540A (ja) 窒化物半導体レーザ素子
JP2007329487A (ja) レーザ素子および光記録再生装置
JP2009267108A (ja) 半導体発光素子及びそれを用いた半導体発光装置
JP2005322944A (ja) 窒化ガリウム系半導体発光素子の評価方法および製造方法
JP5681338B2 (ja) 窒化物半導体レーザ素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120309

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120309

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20120309

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130124

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130305

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131001

R150 Certificate of patent or registration of utility model

Ref document number: 5383313

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150