JP5372102B2 - 光電変換装置および撮像システム - Google Patents

光電変換装置および撮像システム Download PDF

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Publication number
JP5372102B2
JP5372102B2 JP2011223303A JP2011223303A JP5372102B2 JP 5372102 B2 JP5372102 B2 JP 5372102B2 JP 2011223303 A JP2011223303 A JP 2011223303A JP 2011223303 A JP2011223303 A JP 2011223303A JP 5372102 B2 JP5372102 B2 JP 5372102B2
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Prior art keywords
light receiving
refractive index
lens
receiving element
photoelectric conversion
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Japanese (ja)
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JP2012182432A (ja
JP2012182432A5 (enExample
Inventor
政樹 栗原
昌弘 小林
武史 市川
康弘 関根
真人 篠原
太朗 加藤
玄三 門間
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011223303A priority Critical patent/JP5372102B2/ja
Priority to US13/364,230 priority patent/US9293493B2/en
Priority to CN201210027705.3A priority patent/CN102637704B/zh
Publication of JP2012182432A publication Critical patent/JP2012182432A/ja
Publication of JP2012182432A5 publication Critical patent/JP2012182432A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2011223303A 2011-02-09 2011-10-07 光電変換装置および撮像システム Active JP5372102B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011223303A JP5372102B2 (ja) 2011-02-09 2011-10-07 光電変換装置および撮像システム
US13/364,230 US9293493B2 (en) 2011-02-09 2012-02-01 Photoelectric conversion apparatus and image sensing system
CN201210027705.3A CN102637704B (zh) 2011-02-09 2012-02-09 光电转换装置和图像感测系统

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011026345 2011-02-09
JP2011026345 2011-02-09
JP2011223303A JP5372102B2 (ja) 2011-02-09 2011-10-07 光電変換装置および撮像システム

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JP2012182432A JP2012182432A (ja) 2012-09-20
JP2012182432A5 JP2012182432A5 (enExample) 2013-03-28
JP5372102B2 true JP5372102B2 (ja) 2013-12-18

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US (1) US9293493B2 (enExample)
JP (1) JP5372102B2 (enExample)
CN (1) CN102637704B (enExample)

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JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
KR102327503B1 (ko) * 2014-09-04 2021-11-18 에스케이하이닉스 주식회사 이미지 센서, 그 제조방법 및 이를 구비한 전자장치
WO2016103430A1 (ja) * 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
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JP7071055B2 (ja) * 2017-02-24 2022-05-18 キヤノン株式会社 撮像素子および撮像装置
KR102666282B1 (ko) * 2017-12-12 2024-05-14 르파운드리 에스.알.엘. 가시광선 및 자외선 검출을 위한 반도체 광학 센서 및 그 제조 공정
KR102632442B1 (ko) * 2018-05-09 2024-01-31 삼성전자주식회사 이미지 센서 및 전자 장치
JP2020113573A (ja) * 2019-01-08 2020-07-27 キヤノン株式会社 光電変換装置
CN114041208A (zh) 2019-09-30 2022-02-11 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114008782A (zh) 2019-09-30 2022-02-01 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN112824956A (zh) * 2019-11-21 2021-05-21 三赢科技（深圳）有限公司 透光薄片、激光投射模组、深度相机以及电子装置
WO2022050897A2 (en) * 2020-08-27 2022-03-10 Compoundtek Pte. Ltd. Semiconductor device and fabricating method therefor
TWI807248B (zh) * 2021-01-22 2023-07-01 財團法人國家實驗研究院 具有增強感光效果之聚光結構
WO2022168523A1 (ja) * 2021-02-02 2022-08-11 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法
EP4318590A4 (en) * 2021-03-31 2025-03-05 Sony Semiconductor Solutions Corporation SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
CN112885859A (zh) * 2021-03-31 2021-06-01 华虹半导体(无锡)有限公司 Cmos图像传感器
CN115224055A (zh) * 2021-04-21 2022-10-21 谢远达 具有增强感光效果的聚光结构
US11594647B2 (en) * 2021-04-21 2023-02-28 National Applied Research Laboratories Light-concentrating structure with photosensitivity enhancing effect
CN115825927A (zh) * 2022-03-29 2023-03-21 神盾股份有限公司 距离感测模块
JPWO2024038856A1 (enExample) * 2022-08-19 2024-02-22
KR20240133030A (ko) * 2023-02-28 2024-09-04 주식회사 디비하이텍 이미지 센서 및 제조방법

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JP3789365B2 (ja) 2002-01-31 2006-06-21 シャープ株式会社 層内レンズ付き半導体装置およびその製造方法
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JP2005252391A (ja) * 2004-03-01 2005-09-15 Canon Inc 撮像装置
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JP5288823B2 (ja) 2008-02-18 2013-09-11 キヤノン株式会社 光電変換装置、及び光電変換装置の製造方法
JP5235565B2 (ja) * 2008-08-27 2013-07-10 キヤノン株式会社 撮像センサ及び撮像装置
JP5428400B2 (ja) 2009-03-04 2014-02-26 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5434252B2 (ja) 2009-05-14 2014-03-05 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US8330840B2 (en) * 2009-08-06 2012-12-11 Aptina Imaging Corporation Image sensor with multilayer interference filters

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US20120200728A1 (en) 2012-08-09
US9293493B2 (en) 2016-03-22
JP2012182432A (ja) 2012-09-20
CN102637704B (zh) 2015-04-29
CN102637704A (zh) 2012-08-15

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