CN102637704B - 光电转换装置和图像感测系统 - Google Patents
光电转换装置和图像感测系统 Download PDFInfo
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- CN102637704B CN102637704B CN201210027705.3A CN201210027705A CN102637704B CN 102637704 B CN102637704 B CN 102637704B CN 201210027705 A CN201210027705 A CN 201210027705A CN 102637704 B CN102637704 B CN 102637704B
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011026345 | 2011-02-09 | ||
| JP2011-026345 | 2011-02-09 | ||
| JP2011223303A JP5372102B2 (ja) | 2011-02-09 | 2011-10-07 | 光電変換装置および撮像システム |
| JP2011-223303 | 2011-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637704A CN102637704A (zh) | 2012-08-15 |
| CN102637704B true CN102637704B (zh) | 2015-04-29 |
Family
ID=46600406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210027705.3A Active CN102637704B (zh) | 2011-02-09 | 2012-02-09 | 光电转换装置和图像感测系统 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9293493B2 (enExample) |
| JP (1) | JP5372102B2 (enExample) |
| CN (1) | CN102637704B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014036092A (ja) * | 2012-08-08 | 2014-02-24 | Canon Inc | 光電変換装置 |
| US9123839B2 (en) * | 2013-03-13 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company Limited | Image sensor with stacked grid structure |
| US20140375852A1 (en) * | 2013-06-20 | 2014-12-25 | Canon Kabushiki Kaisha | Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus |
| JP2015060855A (ja) * | 2013-09-17 | 2015-03-30 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP6166640B2 (ja) * | 2013-10-22 | 2017-07-19 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| US9386203B2 (en) * | 2013-10-28 | 2016-07-05 | Omnivision Technologies, Inc. | Compact spacer in multi-lens array module |
| JP6444066B2 (ja) | 2014-06-02 | 2018-12-26 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP6173259B2 (ja) | 2014-06-02 | 2017-08-02 | キヤノン株式会社 | 光電変換装置および撮像システム |
| KR102327503B1 (ko) * | 2014-09-04 | 2021-11-18 | 에스케이하이닉스 주식회사 | 이미지 센서, 그 제조방법 및 이를 구비한 전자장치 |
| WO2016103430A1 (ja) * | 2014-12-25 | 2016-06-30 | キヤノン株式会社 | ラインセンサ、画像読取装置、画像形成装置 |
| JP2016149417A (ja) * | 2015-02-10 | 2016-08-18 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法及び撮像システム |
| JP7071055B2 (ja) * | 2017-02-24 | 2022-05-18 | キヤノン株式会社 | 撮像素子および撮像装置 |
| KR102666282B1 (ko) * | 2017-12-12 | 2024-05-14 | 르파운드리 에스.알.엘. | 가시광선 및 자외선 검출을 위한 반도체 광학 센서 및 그 제조 공정 |
| KR102632442B1 (ko) * | 2018-05-09 | 2024-01-31 | 삼성전자주식회사 | 이미지 센서 및 전자 장치 |
| JP2020113573A (ja) * | 2019-01-08 | 2020-07-27 | キヤノン株式会社 | 光電変換装置 |
| CN110649057B (zh) * | 2019-09-30 | 2021-03-05 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| WO2021062661A1 (zh) | 2019-09-30 | 2021-04-08 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| CN114041208A (zh) | 2019-09-30 | 2022-02-11 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| CN112824956A (zh) * | 2019-11-21 | 2021-05-21 | 三赢科技（深圳）有限公司 | 透光薄片、激光投射模组、深度相机以及电子装置 |
| US20230253518A1 (en) * | 2020-08-27 | 2023-08-10 | Compoundtek Pte. Ltd. | Semiconductor device and fabricating method therefor |
| TWI807248B (zh) * | 2021-01-22 | 2023-07-01 | 財團法人國家實驗研究院 | 具有增強感光效果之聚光結構 |
| JP7637162B2 (ja) * | 2021-02-02 | 2025-02-27 | 株式会社ジャパンディスプレイ | 検出装置及び検出装置の製造方法 |
| CN117063287A (zh) * | 2021-03-31 | 2023-11-14 | 索尼半导体解决方案公司 | 固态成像装置及电子设备 |
| CN112885859A (zh) * | 2021-03-31 | 2021-06-01 | 华虹半导体(无锡)有限公司 | Cmos图像传感器 |
| CN115224055A (zh) * | 2021-04-21 | 2022-10-21 | 谢远达 | 具有增强感光效果的聚光结构 |
| US11594647B2 (en) * | 2021-04-21 | 2023-02-28 | National Applied Research Laboratories | Light-concentrating structure with photosensitivity enhancing effect |
| CN115825927A (zh) * | 2022-03-29 | 2023-03-21 | 神盾股份有限公司 | 距离感测模块 |
| CN119604795A (zh) * | 2022-08-19 | 2025-03-11 | 株式会社尼康 | 检测装置 |
| KR20240133030A (ko) * | 2023-02-28 | 2024-09-04 | 주식회사 디비하이텍 | 이미지 센서 및 제조방법 |
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| CN101197386A (zh) * | 2006-12-08 | 2008-06-11 | 索尼株式会社 | 固体摄像装置及其制造方法和照相机 |
| JP2008258203A (ja) * | 2007-03-30 | 2008-10-23 | Fujifilm Corp | 固体撮像素子及び固体撮像素子の製造方法 |
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| JP4548702B2 (ja) | 2003-10-02 | 2010-09-22 | キヤノン株式会社 | 撮像装置および撮像システム |
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-
2011
- 2011-10-07 JP JP2011223303A patent/JP5372102B2/ja active Active
-
2012
- 2012-02-01 US US13/364,230 patent/US9293493B2/en active Active
- 2012-02-09 CN CN201210027705.3A patent/CN102637704B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097846A (zh) * | 2006-06-28 | 2008-01-02 | 东京毅力科创株式会社 | 微透镜形成方法以及半导体装置 |
| CN101197386A (zh) * | 2006-12-08 | 2008-06-11 | 索尼株式会社 | 固体摄像装置及其制造方法和照相机 |
| JP2008258203A (ja) * | 2007-03-30 | 2008-10-23 | Fujifilm Corp | 固体撮像素子及び固体撮像素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012182432A (ja) | 2012-09-20 |
| US20120200728A1 (en) | 2012-08-09 |
| CN102637704A (zh) | 2012-08-15 |
| US9293493B2 (en) | 2016-03-22 |
| JP5372102B2 (ja) | 2013-12-18 |
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