JP5363338B2 - 化学機械平坦化組成物、システム、及びその使用方法 - Google Patents
化学機械平坦化組成物、システム、及びその使用方法 Download PDFInfo
- Publication number
- JP5363338B2 JP5363338B2 JP2009543056A JP2009543056A JP5363338B2 JP 5363338 B2 JP5363338 B2 JP 5363338B2 JP 2009543056 A JP2009543056 A JP 2009543056A JP 2009543056 A JP2009543056 A JP 2009543056A JP 5363338 B2 JP5363338 B2 JP 5363338B2
- Authority
- JP
- Japan
- Prior art keywords
- working liquid
- wafer
- proline
- removal rate
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H10P95/062—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/613,646 | 2006-12-20 | ||
| US11/613,646 US8591764B2 (en) | 2006-12-20 | 2006-12-20 | Chemical mechanical planarization composition, system, and method of use |
| PCT/US2007/086955 WO2008079651A1 (en) | 2006-12-20 | 2007-12-10 | Chemical mechanical planarization composition, system, and method of use |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010514222A JP2010514222A (ja) | 2010-04-30 |
| JP2010514222A5 JP2010514222A5 (enExample) | 2011-02-10 |
| JP5363338B2 true JP5363338B2 (ja) | 2013-12-11 |
Family
ID=39543526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009543056A Expired - Fee Related JP5363338B2 (ja) | 2006-12-20 | 2007-12-10 | 化学機械平坦化組成物、システム、及びその使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8591764B2 (enExample) |
| EP (1) | EP2109648B1 (enExample) |
| JP (1) | JP5363338B2 (enExample) |
| KR (1) | KR101432852B1 (enExample) |
| CN (1) | CN101568613B (enExample) |
| TW (1) | TWI437084B (enExample) |
| WO (1) | WO2008079651A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8092707B2 (en) * | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
| US20080261402A1 (en) * | 2007-04-17 | 2008-10-23 | United Microelectronics Corp. | Method of removing insulating layer on substrate |
| US20090023362A1 (en) * | 2007-07-17 | 2009-01-22 | Tzu-Shin Chen | Retaining ring for chemical mechanical polishing, its operational method and application system |
| DE102009025243B4 (de) | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
| EA026288B1 (ru) * | 2011-07-22 | 2017-03-31 | Сатисло Аг | Оптическое изделие, содержащее незапотевающее покрытие с улучшенной долговечностью на основе поверхностно-активных веществ |
| WO2014047014A1 (en) * | 2012-09-21 | 2014-03-27 | 3M Innovative Properties Company | Incorporating additives into fixed abrasive webs for improved cmp performance |
| TWI530557B (zh) * | 2014-05-29 | 2016-04-21 | 卡博特微電子公司 | 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的cmp組合物 |
| NZ754331A (en) * | 2016-12-22 | 2025-09-26 | Illumina Inc | Flow cell package and method for making the same |
| CN108250975B (zh) * | 2016-12-28 | 2026-01-27 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液及其应用 |
| TW202035361A (zh) * | 2018-12-12 | 2020-10-01 | 美商3M新設資產公司 | 氟化胺氧化物界面活性劑 |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5114437A (en) * | 1990-08-28 | 1992-05-19 | Sumitomo Chemical Co., Ltd. | Polishing composition for metallic material |
| US5152917B1 (en) * | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
| JPH05112775A (ja) | 1991-10-22 | 1993-05-07 | Sumitomo Chem Co Ltd | 金属材料の研磨用組成物 |
| US5690539A (en) * | 1995-08-07 | 1997-11-25 | Cal-West Equipment Company Inc. | Method of abarding using surface abrasion compositions |
| US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| US6121143A (en) * | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
| CA2342332A1 (en) * | 1998-08-31 | 2000-03-09 | Hiroki Terazaki | Abrasive liquid for metal and method for polishing |
| US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6468910B1 (en) * | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
| JP3869608B2 (ja) * | 2000-01-25 | 2007-01-17 | Necエレクトロニクス株式会社 | 防食剤 |
| KR20020086949A (ko) * | 2000-04-11 | 2002-11-20 | 캐보트 마이크로일렉트로닉스 코포레이션 | 실리콘 옥사이드의 선택적 제거를 위한 시스템 |
| US6733553B2 (en) * | 2000-04-13 | 2004-05-11 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same |
| US6964923B1 (en) * | 2000-05-24 | 2005-11-15 | International Business Machines Corporation | Selective polishing with slurries containing polyelectrolytes |
| JP2002057130A (ja) * | 2000-08-14 | 2002-02-22 | Three M Innovative Properties Co | Cmp用研磨パッド |
| US20020092423A1 (en) * | 2000-09-05 | 2002-07-18 | Gillingham Gary R. | Methods for filtering air for a gas turbine system |
| US6477926B1 (en) * | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
| US6702954B1 (en) * | 2000-10-19 | 2004-03-09 | Ferro Corporation | Chemical-mechanical polishing slurry and method |
| KR100464429B1 (ko) * | 2002-08-16 | 2005-01-03 | 삼성전자주식회사 | 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법 |
| JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| US6841480B2 (en) * | 2002-02-04 | 2005-01-11 | Infineon Technologies Ag | Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate |
| US20030176151A1 (en) * | 2002-02-12 | 2003-09-18 | Applied Materials, Inc. | STI polish enhancement using fixed abrasives with amino acid additives |
| US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
| US7063597B2 (en) * | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2004241675A (ja) * | 2003-02-07 | 2004-08-26 | Renesas Technology Corp | 配線接続構造を有する電子デバイスの製造方法 |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| US7160178B2 (en) * | 2003-08-07 | 2007-01-09 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
| US7427361B2 (en) * | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
| US7214623B2 (en) * | 2003-10-13 | 2007-05-08 | International Business Machines Corporation | Planarization system and method using a carbonate containing fluid |
| US7314578B2 (en) * | 2003-12-12 | 2008-01-01 | Samsung Electronics Co., Ltd. | Slurry compositions and CMP methods using the same |
| JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| US20060000808A1 (en) | 2004-07-01 | 2006-01-05 | Fuji Photo Film Co., Ltd. | Polishing solution of metal and chemical mechanical polishing method |
| JP2006100538A (ja) | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| JP2006179845A (ja) | 2004-11-26 | 2006-07-06 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US6997785B1 (en) * | 2004-12-23 | 2006-02-14 | 3M Innovative Properties Company | Wafer planarization composition and method of use |
| JP2006295152A (ja) * | 2005-03-17 | 2006-10-26 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
| US7368388B2 (en) * | 2005-04-15 | 2008-05-06 | Small Robert J | Cerium oxide abrasives for chemical mechanical polishing |
-
2006
- 2006-12-20 US US11/613,646 patent/US8591764B2/en not_active Expired - Fee Related
-
2007
- 2007-12-10 JP JP2009543056A patent/JP5363338B2/ja not_active Expired - Fee Related
- 2007-12-10 KR KR1020097012681A patent/KR101432852B1/ko not_active Expired - Fee Related
- 2007-12-10 CN CN2007800477343A patent/CN101568613B/zh not_active Expired - Fee Related
- 2007-12-10 WO PCT/US2007/086955 patent/WO2008079651A1/en not_active Ceased
- 2007-12-10 EP EP07869084A patent/EP2109648B1/en not_active Not-in-force
- 2007-12-19 TW TW096148796A patent/TWI437084B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR101432852B1 (ko) | 2014-08-26 |
| EP2109648B1 (en) | 2012-08-01 |
| CN101568613A (zh) | 2009-10-28 |
| TWI437084B (zh) | 2014-05-11 |
| JP2010514222A (ja) | 2010-04-30 |
| WO2008079651A1 (en) | 2008-07-03 |
| EP2109648A1 (en) | 2009-10-21 |
| US20080153392A1 (en) | 2008-06-26 |
| TW200838998A (en) | 2008-10-01 |
| CN101568613B (zh) | 2013-02-06 |
| EP2109648A4 (en) | 2010-09-08 |
| US8591764B2 (en) | 2013-11-26 |
| KR20090087927A (ko) | 2009-08-18 |
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