CN101568613B - 化学-机械平面化组合物、系统及使用方法 - Google Patents

化学-机械平面化组合物、系统及使用方法 Download PDF

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Publication number
CN101568613B
CN101568613B CN2007800477343A CN200780047734A CN101568613B CN 101568613 B CN101568613 B CN 101568613B CN 2007800477343 A CN2007800477343 A CN 2007800477343A CN 200780047734 A CN200780047734 A CN 200780047734A CN 101568613 B CN101568613 B CN 101568613B
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CN
China
Prior art keywords
working fluid
proline
wafer
fluorochemical surfactant
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2007800477343A
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English (en)
Chinese (zh)
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CN101568613A (zh
Inventor
约翰·J·加格里亚蒂
帕特里西亚·M·萨武
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101568613A publication Critical patent/CN101568613A/zh
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007800477343A 2006-12-20 2007-12-10 化学-机械平面化组合物、系统及使用方法 Expired - Fee Related CN101568613B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/613,646 US8591764B2 (en) 2006-12-20 2006-12-20 Chemical mechanical planarization composition, system, and method of use
US11/613,646 2006-12-20
PCT/US2007/086955 WO2008079651A1 (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use

Publications (2)

Publication Number Publication Date
CN101568613A CN101568613A (zh) 2009-10-28
CN101568613B true CN101568613B (zh) 2013-02-06

Family

ID=39543526

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800477343A Expired - Fee Related CN101568613B (zh) 2006-12-20 2007-12-10 化学-机械平面化组合物、系统及使用方法

Country Status (7)

Country Link
US (1) US8591764B2 (enExample)
EP (1) EP2109648B1 (enExample)
JP (1) JP5363338B2 (enExample)
KR (1) KR101432852B1 (enExample)
CN (1) CN101568613B (enExample)
TW (1) TWI437084B (enExample)
WO (1) WO2008079651A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US20080261402A1 (en) * 2007-04-17 2008-10-23 United Microelectronics Corp. Method of removing insulating layer on substrate
US20090023362A1 (en) * 2007-07-17 2009-01-22 Tzu-Shin Chen Retaining ring for chemical mechanical polishing, its operational method and application system
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
EA026288B1 (ru) * 2011-07-22 2017-03-31 Сатисло Аг Оптическое изделие, содержащее незапотевающее покрытие с улучшенной долговечностью на основе поверхностно-активных веществ
CN104822495A (zh) * 2012-09-21 2015-08-05 3M创新有限公司 向固定磨料幅材中引入添加剂以改善cmp性能
TWI530557B (zh) * 2014-05-29 2016-04-21 卡博特微電子公司 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的ｃｍｐ組合物
JP7236999B2 (ja) 2016-12-22 2023-03-10 イラミーナ インコーポレーテッド フローセルパッケージおよびその製造方法
CN108250975A (zh) * 2016-12-28 2018-07-06 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其应用
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544892B2 (en) * 1999-12-08 2003-04-08 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
CN1742066A (zh) * 2003-02-03 2006-03-01 卡伯特微电子公司 抛光含硅电介质的方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114437A (en) 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
JPH05112775A (ja) 1991-10-22 1993-05-07 Sumitomo Chem Co Ltd 金属材料の研磨用組成物
US5690539A (en) * 1995-08-07 1997-11-25 Cal-West Equipment Company Inc. Method of abarding using surface abrasion compositions
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
AU5445899A (en) 1998-08-31 2000-03-21 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
US6468910B1 (en) 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
JP3869608B2 (ja) 2000-01-25 2007-01-17 Ｎｅｃエレクトロニクス株式会社 防食剤
CN1422314A (zh) * 2000-04-11 2003-06-04 卡伯特微电子公司 用于优先除去氧化硅的系统
US6733553B2 (en) 2000-04-13 2004-05-11 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
JP2002057130A (ja) * 2000-08-14 2002-02-22 Three M Innovative Properties Co Ｃｍｐ用研磨パッド
US20020092423A1 (en) * 2000-09-05 2002-07-18 Gillingham Gary R. Methods for filtering air for a gas turbine system
US6477926B1 (en) * 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
US6702954B1 (en) 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
KR100464429B1 (ko) 2002-08-16 2005-01-03 삼성전자주식회사 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법
CN100386850C (zh) * 2001-10-31 2008-05-07 日立化成工业株式会社 研磨液及研磨方法
US6841480B2 (en) 2002-02-04 2005-01-11 Infineon Technologies Ag Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US20030176151A1 (en) 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
JP2004241675A (ja) * 2003-02-07 2004-08-26 Renesas Technology Corp 配線接続構造を有する電子デバイスの製造方法
US20050028450A1 (en) 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
US7160178B2 (en) 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US7427361B2 (en) 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US7214623B2 (en) 2003-10-13 2007-05-08 International Business Machines Corporation Planarization system and method using a carbonate containing fluid
US7314578B2 (en) 2003-12-12 2008-01-01 Samsung Electronics Co., Ltd. Slurry compositions and CMP methods using the same
JP2005244123A (ja) 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US20060000808A1 (en) 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
JP2006100538A (ja) 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP2006179845A (ja) 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2006295152A (ja) * 2005-03-17 2006-10-26 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544892B2 (en) * 1999-12-08 2003-04-08 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
CN1742066A (zh) * 2003-02-03 2006-03-01 卡伯特微电子公司 抛光含硅电介质的方法
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use

Also Published As

Publication number Publication date
JP5363338B2 (ja) 2013-12-11
US20080153392A1 (en) 2008-06-26
TWI437084B (zh) 2014-05-11
WO2008079651A1 (en) 2008-07-03
KR20090087927A (ko) 2009-08-18
US8591764B2 (en) 2013-11-26
EP2109648B1 (en) 2012-08-01
JP2010514222A (ja) 2010-04-30
CN101568613A (zh) 2009-10-28
EP2109648A4 (en) 2010-09-08
TW200838998A (en) 2008-10-01
KR101432852B1 (ko) 2014-08-26
EP2109648A1 (en) 2009-10-21

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Granted publication date: 20130206

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