KR101432852B1 - 화학 기계적 평탄화 조성물, 시스템, 및 사용 방법 - Google Patents

화학 기계적 평탄화 조성물, 시스템, 및 사용 방법 Download PDF

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Publication number
KR101432852B1
KR101432852B1 KR1020097012681A KR20097012681A KR101432852B1 KR 101432852 B1 KR101432852 B1 KR 101432852B1 KR 1020097012681 A KR1020097012681 A KR 1020097012681A KR 20097012681 A KR20097012681 A KR 20097012681A KR 101432852 B1 KR101432852 B1 KR 101432852B1
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South Korea
Prior art keywords
working liquid
proline
wafer
delete delete
abrasive
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KR1020097012681A
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English (en)
Korean (ko)
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KR20090087927A (ko
Inventor
존 제이. 개글리아디
패트리샤 엠. 사부
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20090087927A publication Critical patent/KR20090087927A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020097012681A 2006-12-20 2007-12-10 화학 기계적 평탄화 조성물, 시스템, 및 사용 방법 Expired - Fee Related KR101432852B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/613,646 US8591764B2 (en) 2006-12-20 2006-12-20 Chemical mechanical planarization composition, system, and method of use
US11/613,646 2006-12-20
PCT/US2007/086955 WO2008079651A1 (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use

Publications (2)

Publication Number Publication Date
KR20090087927A KR20090087927A (ko) 2009-08-18
KR101432852B1 true KR101432852B1 (ko) 2014-08-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097012681A Expired - Fee Related KR101432852B1 (ko) 2006-12-20 2007-12-10 화학 기계적 평탄화 조성물, 시스템, 및 사용 방법

Country Status (7)

Country Link
US (1) US8591764B2 (enExample)
EP (1) EP2109648B1 (enExample)
JP (1) JP5363338B2 (enExample)
KR (1) KR101432852B1 (enExample)
CN (1) CN101568613B (enExample)
TW (1) TWI437084B (enExample)
WO (1) WO2008079651A1 (enExample)

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US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US20080261402A1 (en) * 2007-04-17 2008-10-23 United Microelectronics Corp. Method of removing insulating layer on substrate
US20090023362A1 (en) * 2007-07-17 2009-01-22 Tzu-Shin Chen Retaining ring for chemical mechanical polishing, its operational method and application system
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
EA026288B1 (ru) * 2011-07-22 2017-03-31 Сатисло Аг Оптическое изделие, содержащее незапотевающее покрытие с улучшенной долговечностью на основе поверхностно-активных веществ
CN104822495A (zh) * 2012-09-21 2015-08-05 3M创新有限公司 向固定磨料幅材中引入添加剂以改善cmp性能
TWI530557B (zh) * 2014-05-29 2016-04-21 卡博特微電子公司 具高移除速率及低缺陷率之對氧化物與多晶矽及氮化物具有選擇性的ｃｍｐ組合物
JP7236999B2 (ja) 2016-12-22 2023-03-10 イラミーナ インコーポレーテッド フローセルパッケージおよびその製造方法
CN108250975A (zh) * 2016-12-28 2018-07-06 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其应用
TW202035361A (zh) * 2018-12-12 2020-10-01 美商3M新設資產公司 氟化胺氧化物界面活性劑

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US6544892B2 (en) 1999-12-08 2003-04-08 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
EP1612249A1 (en) * 2004-07-01 2006-01-04 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

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Publication number Priority date Publication date Assignee Title
US6544892B2 (en) 1999-12-08 2003-04-08 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
EP1612249A1 (en) * 2004-07-01 2006-01-04 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use

Also Published As

Publication number Publication date
JP5363338B2 (ja) 2013-12-11
US20080153392A1 (en) 2008-06-26
TWI437084B (zh) 2014-05-11
WO2008079651A1 (en) 2008-07-03
KR20090087927A (ko) 2009-08-18
US8591764B2 (en) 2013-11-26
EP2109648B1 (en) 2012-08-01
JP2010514222A (ja) 2010-04-30
CN101568613A (zh) 2009-10-28
CN101568613B (zh) 2013-02-06
EP2109648A4 (en) 2010-09-08
TW200838998A (en) 2008-10-01
EP2109648A1 (en) 2009-10-21

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