JP5354821B2 - 有機el素子の製造方法及び製造装置 - Google Patents
有機el素子の製造方法及び製造装置 Download PDFInfo
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- JP5354821B2 JP5354821B2 JP2012266748A JP2012266748A JP5354821B2 JP 5354821 B2 JP5354821 B2 JP 5354821B2 JP 2012266748 A JP2012266748 A JP 2012266748A JP 2012266748 A JP2012266748 A JP 2012266748A JP 5354821 B2 JP5354821 B2 JP 5354821B2
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- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 238000007740 vapor deposition Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000011364 vaporized material Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 123
- 238000000151 deposition Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000002585 base Substances 0.000 description 81
- 239000010410 layer Substances 0.000 description 71
- 230000000052 comparative effect Effects 0.000 description 14
- 230000008016 vaporization Effects 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000009834 vaporization Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 1
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 N, N-di-m-tolylamino Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
この第2領域52iは、その一端部が円弧状の第1領域52hの一端部に繋がっている。
(実施例1)
(比較例)
シャドーマスクには所定のピッチで開口部が形成されている。さらに、繰り出されたシャドーマスクは、押さえロールによって基材に密着させられる。
Claims (4)
- 帯状の基材をローラに接触させて搬送する搬送工程と、
気化材料を蒸着源から吐出することにより、前記基材の所定部位に前記気化材料を蒸着する工程と、
前記気化材料を蒸着する際に、前記気化材料が前記所定部位を除く部位に蒸着するのを防止するように、前記基材を遮蔽するための遮蔽部を前記蒸着源および前記基材間に配置させる工程と、を有し、
前記遮蔽部は、前記蒸着源および前記基材間に配置されて前記基材を遮蔽する遮蔽位置と、前記蒸着源および前記基材間から退避して前記基材を遮蔽するのを解除する遮蔽解除位置とに切り替え可能に構成され、
前記遮蔽部は、前記ローラと共に回転しながら、前記遮蔽位置と、前記遮蔽解除位置とに切り替えられることを特徴とする有機EL素子の製造方法。 - 前記遮蔽部は、前記遮蔽位置に位置した状態で前記基材の幅方向に亘って配置されるべく、前記基材の幅寸法よりも大きく形成される請求項1に記載の有機EL素子の製造方法。
- 前記遮蔽部は、フリップ式遮蔽板である請求項1又は2に記載の有機ELの製造方法。
- 帯状の基材に接触するローラと、
気化材料を前記基材に蒸着すべく、前記基材の所定部位に向けて前記気化材料を吐出する蒸着源と、
前記気化材料が前記所定部位を除く部位に蒸着するのを防止するように、前記基材を遮蔽する遮蔽装置と、を備え、
前記遮蔽装置は、前記基材を遮蔽するための遮蔽部と、該遮蔽部を、前記蒸着源及び前記基材間に配置させて前記基材を遮蔽する遮蔽位置と、前記蒸着源及び前記基材間から退避させて前記基材を遮蔽するのを解除する遮蔽解除位置とに切り替え可能な切替機構と、を備え、
前記遮蔽部は、前記ローラとともに回転しながら、前記切替機構によって、前記遮蔽位置と、前記遮蔽解除位置とに切り替えられることを特徴とする有機EL素子の製造装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012266748A JP5354821B2 (ja) | 2011-12-27 | 2012-12-05 | 有機el素子の製造方法及び製造装置 |
KR1020137015700A KR20140107101A (ko) | 2011-12-27 | 2012-12-10 | 유기 el 소자의 제조 방법 및 제조 장치 |
EP12862802.1A EP2701465A4 (en) | 2011-12-27 | 2012-12-10 | METHOD AND DEVICE FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT |
CN201280003847.4A CN103283307B (zh) | 2011-12-27 | 2012-12-10 | 有机el元件的制造方法和制造装置 |
US14/115,793 US8999735B2 (en) | 2011-12-27 | 2012-12-10 | Method and apparatus for manufacturing organic el device |
PCT/JP2012/081975 WO2013099578A1 (ja) | 2011-12-27 | 2012-12-10 | 有機el素子の製造方法及び製造装置 |
TW101148374A TW201334255A (zh) | 2011-12-27 | 2012-12-19 | 有機el元件之製造方法及製造裝置(一) |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011285561 | 2011-12-27 | ||
JP2011285561 | 2011-12-27 | ||
JP2012266748A JP5354821B2 (ja) | 2011-12-27 | 2012-12-05 | 有機el素子の製造方法及び製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013152924A JP2013152924A (ja) | 2013-08-08 |
JP5354821B2 true JP5354821B2 (ja) | 2013-11-27 |
Family
ID=48697071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012266748A Expired - Fee Related JP5354821B2 (ja) | 2011-12-27 | 2012-12-05 | 有機el素子の製造方法及び製造装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8999735B2 (ja) |
EP (1) | EP2701465A4 (ja) |
JP (1) | JP5354821B2 (ja) |
KR (1) | KR20140107101A (ja) |
CN (1) | CN103283307B (ja) |
TW (1) | TW201334255A (ja) |
WO (1) | WO2013099578A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5856839B2 (ja) * | 2011-12-27 | 2016-02-10 | 日東電工株式会社 | 有機el素子の製造方法及び製造装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000183500A (ja) | 1998-12-18 | 2000-06-30 | Sony Corp | パターン形成装置およびパターン形成方法 |
JP2003133067A (ja) * | 2001-10-23 | 2003-05-09 | Sony Corp | パターン形成装置及びパターン形成方法 |
JP4944341B2 (ja) * | 2002-02-26 | 2012-05-30 | 日本電気株式会社 | リチウムイオン二次電池用負極の製造方法 |
KR100992229B1 (ko) * | 2008-08-29 | 2010-11-05 | 삼성전기주식회사 | 롤투롤타입의 박막형성장치 |
JP5660041B2 (ja) * | 2009-08-20 | 2015-01-28 | コニカミノルタ株式会社 | パターン薄膜形成方法 |
JP5300765B2 (ja) * | 2010-03-18 | 2013-09-25 | 富士フイルム株式会社 | ガスバリアフィルム |
-
2012
- 2012-12-05 JP JP2012266748A patent/JP5354821B2/ja not_active Expired - Fee Related
- 2012-12-10 WO PCT/JP2012/081975 patent/WO2013099578A1/ja active Application Filing
- 2012-12-10 CN CN201280003847.4A patent/CN103283307B/zh not_active Expired - Fee Related
- 2012-12-10 US US14/115,793 patent/US8999735B2/en not_active Expired - Fee Related
- 2012-12-10 KR KR1020137015700A patent/KR20140107101A/ko active IP Right Grant
- 2012-12-10 EP EP12862802.1A patent/EP2701465A4/en not_active Withdrawn
- 2012-12-19 TW TW101148374A patent/TW201334255A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20140107101A (ko) | 2014-09-04 |
CN103283307B (zh) | 2016-05-25 |
TW201334255A (zh) | 2013-08-16 |
EP2701465A1 (en) | 2014-02-26 |
US20140084276A1 (en) | 2014-03-27 |
WO2013099578A1 (ja) | 2013-07-04 |
JP2013152924A (ja) | 2013-08-08 |
US8999735B2 (en) | 2015-04-07 |
EP2701465A4 (en) | 2015-08-05 |
CN103283307A (zh) | 2013-09-04 |
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