JP5352546B2 - 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 - Google Patents
接合システム、接合方法、プログラム及びコンピュータ記憶媒体 Download PDFInfo
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- JP5352546B2 JP5352546B2 JP2010188804A JP2010188804A JP5352546B2 JP 5352546 B2 JP5352546 B2 JP 5352546B2 JP 2010188804 A JP2010188804 A JP 2010188804A JP 2010188804 A JP2010188804 A JP 2010188804A JP 5352546 B2 JP5352546 B2 JP 5352546B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
30 洗浄装置
31 仮接合装置
40〜43 接合装置
133 複合ノズル体
140 プラズマノズル
141 処理液ノズル
142 供給管
143 ガス供給源
144 供給機器群
145 高周波電源
146 供給管
147 ガス供給源
148 供給機器群
150 接着剤ノズル
180 前熱処理ユニット
181 接合ユニット
182 後熱処理ユニット
200 第1の熱処理板
230 加圧機構
250 第2の熱処理板
280 第3の熱処理板
300 制御部
BU、BL 絶縁部
JU、JL 金属接合部
WU 上ウェハ
WL 下ウェハ
WT 重合ウェハ
WU1、WL1 表面
Claims (12)
- 表面に金属接合部と絶縁部とが形成された基板同士を接合する接合システムであって、
基板の表面を洗浄する洗浄装置と、
前記洗浄装置で洗浄された基板同士を、前記金属接合部を当接させた状態で重ね合わせて、前記絶縁部におけるファンデルワールス力及び水素結合によって仮接合する仮接合装置と、
前記仮接合装置で仮接合された重合基板を本接合する本接合装置と、を備え、
前記仮接合装置は、
処理ガスのプラズマを生成して、基板の表面の前記絶縁部を活性化する表面活性部と、
基板の表面の前記絶縁部に処理液を供給して、当該絶縁部を親水化する表面親水部と、を有し、
前記本接合装置は、
前記絶縁部におけるファンデルワールス力及び水素結合を強固にする第1の温度で重合基板を熱処理する第1の熱処理板と、
前記第1の温度よりも高く、且つ押圧によって前記金属接合部同士が接合する第2の温度で重合基板を熱処理する第2の熱処理板と、
前記第2の熱処理板上の重合基板を当該第2の熱処理板側に押圧する加圧機構と、を有することを特徴とする、接合システム。 - 前記処理液は、霧状の純水又は霧状のアクリル酸であることを特徴とする、請求項1に記載の接合システム。
- 前記仮接合装置は、基板の表面に接着剤を供給する接着剤供給部を有することを特徴とする、請求項1又は2に記載の接合システム。
- 前記接着剤は、前記第1の温度で昇華することを特徴とする、請求項3に記載の接合システム。
- 前記洗浄装置は、他の処理ガスのプラズマを用いて基板の表面を洗浄することを特徴とする、請求項1〜4のいずれかに記載の接合システム。
- 表面に金属接合部と絶縁部とが形成された基板同士を接合する接合方法であって、
基板の表面を洗浄する洗浄工程と、
その後、処理ガスのプラズマを用いて基板の表面の前記絶縁部を活性化すると共に、処理液を用いて基板の表面の前記絶縁部を親水化する表面処理工程と、
その後、前記表面処理工程が行われた基板同士を、前記金属接合部を当接させた状態で重ね合わせて、前記絶縁部におけるファンデルワールス力及び水素結合によって仮接合する仮接合工程と、
その後、前記仮接合工程で仮接合された重合基板を第1の温度で熱処理し、前記絶縁部におけるファンデルワールス力及び水素結合を強固にした後、重合基板を前記第1の温度よりも高い第2の温度で熱処理しながら、当該重合基板を押圧し前記金属接合部同士を接合させて本接合する本接合工程と、を有することを特徴とする、接合方法。 - 前記処理液は、霧状の純水又は霧状のアクリル酸であることを特徴とする、請求項6に記載の接合方法。
- 前記仮接合工程において、接着剤を用いて基板の表面を接着することを特徴とする、請求項6又は7に記載の接合方法。
- 前記接着剤は、前記第1の温度で昇華することを特徴とする、請求項8に記載の接合方法。
- 前記洗浄工程において、他の処理ガスのプラズマを用いて基板の表面を洗浄することを特徴とする、請求項6〜9のいずれかに記載の接合方法。
- 請求項6〜10のいずかに記載の接合方法を接合システムによって実行させるために、当該接合システムを制御する制御部のコンピュータ上で動作するプログラム。
- 請求項11に記載のプログラムを格納した読み取り可能なコンピュータ記憶媒体。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010188804A JP5352546B2 (ja) | 2010-08-25 | 2010-08-25 | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
PCT/JP2011/068278 WO2012026334A1 (ja) | 2010-08-25 | 2011-08-10 | 接合システム、接合方法及びコンピュータ記憶媒体 |
TW100129260A TW201220418A (en) | 2010-08-25 | 2011-08-16 | Substrate joining system and substrate joining method and computer storage medium |
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JP2010188804A JP5352546B2 (ja) | 2010-08-25 | 2010-08-25 | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
Publications (2)
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JP2012049267A JP2012049267A (ja) | 2012-03-08 |
JP5352546B2 true JP5352546B2 (ja) | 2013-11-27 |
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Country Status (3)
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JP (1) | JP5352546B2 (ja) |
TW (1) | TW201220418A (ja) |
WO (1) | WO2012026334A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2990054B1 (fr) * | 2012-04-27 | 2014-05-02 | Commissariat Energie Atomique | Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif. |
JP2014063791A (ja) * | 2012-09-20 | 2014-04-10 | Tokyo Electron Ltd | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
WO2014157082A1 (ja) * | 2013-03-29 | 2014-10-02 | 東京応化工業株式会社 | 貼付方法 |
JP6396756B2 (ja) * | 2013-11-28 | 2018-09-26 | 京セラ株式会社 | 複合体およびその製造方法ならびに複合基板の製造方法 |
JP6172555B2 (ja) * | 2014-11-21 | 2017-08-02 | 株式会社村田製作所 | ウエハの接合方法 |
CN107958839B (zh) * | 2016-10-18 | 2020-09-29 | 上海新昇半导体科技有限公司 | 晶圆键合方法及其键合装置 |
KR20200060559A (ko) * | 2018-11-20 | 2020-06-01 | 세메스 주식회사 | 본딩 장치 및 본딩 방법 |
TW202247250A (zh) * | 2021-01-25 | 2022-12-01 | 日商東京威力科創股份有限公司 | 表面改質裝置及接合強度判定方法 |
Family Cites Families (8)
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JP2701709B2 (ja) * | 1993-02-16 | 1998-01-21 | 株式会社デンソー | 2つの材料の直接接合方法及び材料直接接合装置 |
JP3350144B2 (ja) * | 1993-05-18 | 2002-11-25 | 本田技研工業株式会社 | チップ部品の接合方法 |
JPH09320913A (ja) * | 1996-05-30 | 1997-12-12 | Nec Kansai Ltd | ウェーハ貼り付け方法及びその装置 |
JP2004266071A (ja) * | 2003-02-28 | 2004-09-24 | Canon Inc | 貼り合わせシステム |
JP2007201196A (ja) * | 2006-01-26 | 2007-08-09 | Matsushita Electric Works Ltd | ウェハ接合装置およびウェハ接合方法 |
JP4635972B2 (ja) * | 2006-06-29 | 2011-02-23 | 株式会社ニコン | ロードロック装置、それを使用した方法及びウエハ接合システム |
JP5256407B2 (ja) * | 2008-03-17 | 2013-08-07 | ボンドテック株式会社 | 接合方法およびこの方法により作成されるデバイス、接合装置並びにこの方法により接合される基板 |
JP5314607B2 (ja) * | 2010-01-20 | 2013-10-16 | 東京エレクトロン株式会社 | 接合装置、接合方法、プログラム及びコンピュータ記憶媒体 |
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2010
- 2010-08-25 JP JP2010188804A patent/JP5352546B2/ja active Active
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2011
- 2011-08-10 WO PCT/JP2011/068278 patent/WO2012026334A1/ja active Application Filing
- 2011-08-16 TW TW100129260A patent/TW201220418A/zh unknown
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Publication number | Publication date |
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WO2012026334A1 (ja) | 2012-03-01 |
TW201220418A (en) | 2012-05-16 |
JP2012049267A (ja) | 2012-03-08 |
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