JP5352084B2 - 半導体装置およびその製造方法 - Google Patents
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- JP5352084B2 JP5352084B2 JP2007329365A JP2007329365A JP5352084B2 JP 5352084 B2 JP5352084 B2 JP 5352084B2 JP 2007329365 A JP2007329365 A JP 2007329365A JP 2007329365 A JP2007329365 A JP 2007329365A JP 5352084 B2 JP5352084 B2 JP 5352084B2
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- 239000004065 semiconductor Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000010410 layer Substances 0.000 claims description 125
- 239000000758 substrate Substances 0.000 claims description 54
- 239000011229 interlayer Substances 0.000 claims description 34
- 238000003860 storage Methods 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000015654 memory Effects 0.000 description 36
- 238000000034 method Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- -1 Silicon Oxide Nitride Chemical class 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Description
12 ビットライン
14 トンネル絶縁膜
16 電荷蓄積層
18 トップ絶縁膜
20 ONO膜
22 ワードライン
24 層間絶縁膜
26 コンタクトホール
28 コンタクトプラグ
30 第2絶縁膜
32 第1絶縁膜
34 ゲート電極
36 第1導電層
38 第2導電層
40 マスク層
42 配線層
44 保護膜
46 第3絶縁膜
48 第4絶縁膜
Claims (11)
- 半導体基板内を延伸して設けられたビットラインと、
前記半導体基板上に設けられた電荷蓄積層と、
前記電荷蓄積層上方に設けられ、前記ビットラインに交差して延伸するワードラインと、
前記ワードライン下であって、前記ビットライン間の前記電荷蓄積層上に設けられたゲート電極と、
前記ビットライン上に設けられ、前記ビットライン延伸方向に延伸する第1絶縁膜と、
前記第1絶縁膜の側面に接して設けられ、前記第1絶縁膜と異なる材料からなる第2絶縁膜と、
前記第1絶縁膜および前記第2絶縁膜上に設けられ、前記第2絶縁膜と異なる材料からなる層間絶縁膜と、
前記第1絶縁膜および前記層間絶縁膜を貫通し、前記第2絶縁膜に挟まれて設けられ、前記ビットラインに接続するコンタクトプラグと、を具備し、
前記第2絶縁膜は、前記ビットライン上に前記ビットライン延伸方向に延伸して設けられていることを特徴とする半導体装置。 - 前記第2絶縁膜はU字型の断面形状をしており、
前記第1絶縁膜は、前記U字型の断面形状をした第2絶縁膜に埋め込まれるように設けられ、
前記コンタクトプラグは、前記U字型の断面形状をした第2絶縁膜の底面を貫通するように設けられていることを特徴とする請求項1記載の半導体装置。 - 前記第2絶縁膜の側面は、前記ビットラインの側面の上方に配置されていることを特徴とする請求項1または2に記載の半導体装置。
- 前記ゲート電極の上面と前記第1絶縁膜の上面と前記第2絶縁膜の上面とは平坦であることを特徴とする請求項1から3のいずれか一項記載の半導体装置。
- 前記第1絶縁膜および前記層間絶縁膜は酸化シリコン膜からなり、前記第2絶縁膜は窒化シリコン膜からなることを特徴とする請求項1から4のいずれか一項記載の半導体装置。
- 半導体基板上に電荷蓄積層を形成する工程と、
前記電荷蓄積層上に延伸する第1導電層を形成する工程と、
前記第1導電層をマスクに、前記半導体基板内にビットラインを形成する工程と、
前記第1導電層間に埋め込まれるように第1絶縁膜を形成する工程と、
前記第1導電層および前記第1絶縁膜上に第2導電層を形成する工程と、
前記第2導電層上に形成された、前記ビットラインに交差して延伸するマスク層をマスクに、前記第2導電層をエッチングしてワードラインを形成する工程と、
前記マスク層をマスクに、前記第1導電層をエッチングしてゲート電極を形成する工程と、
前記第1絶縁膜の側面に接するように、前記第1絶縁膜と異なる材料からなる第2絶縁膜を形成する工程と、
前記第1絶縁膜および前記第2絶縁膜上に、前記第2絶縁膜と異なる材料からなる層間絶縁膜を形成する工程と、
前記層間絶縁膜および前記第1絶縁膜を貫通し、前記第2絶縁膜に挟まれたコンタクトホールを形成する工程と、
前記コンタクトホールに埋め込まれるように、前記ビットラインに接続するコンタクトプラグを形成する工程とを有し、
前記第2絶縁膜は、前記ビットライン上に前記ビットライン延伸方向に延伸して設けられていることを特徴とする半導体装置の製造方法。 - 前記第2絶縁膜は、前記コンタクトホールを形成する工程において、前記第1絶縁膜および前記層間絶縁膜よりエッチングがされ難い材料であることを特徴とする請求項6記載の半導体装置の製造方法。
- 前記第2絶縁膜を形成する工程は、前記第1絶縁膜を形成する工程の前に、前記第1導電層の側面に前記第2絶縁膜を形成する工程を含むことを特徴とする請求項6または7記載の半導体装置の製造方法。
- 前記第2絶縁膜を形成する工程は、前記第1導電層間に沿うように、前記第2絶縁膜を形成する工程を含み、
前記コンタクトホールを形成する工程は、前記第2絶縁膜を貫通するように、前記コンタクトホールを形成する工程を含むことを特徴とする請求項8記載の半導体装置の製造方法。 - 前記ビットラインを形成する工程は、前記第2絶縁膜を形成する工程の後に行うことを特徴とする請求項8または9記載の半導体装置の製造方法。
- 前記第1絶縁膜および前記層間絶縁膜は酸化シリコン膜からなり、前記第2絶縁膜は窒化シリコン膜からなることを特徴とする請求項6から10のいずれか一項記載の半導体装置の製造方法。
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JP2007329365A JP5352084B2 (ja) | 2007-12-20 | 2007-12-20 | 半導体装置およびその製造方法 |
US12/336,757 US7902592B2 (en) | 2007-12-20 | 2008-12-17 | Semiconductor device and method for manufacturing |
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JP2011077185A (ja) * | 2009-09-29 | 2011-04-14 | Elpida Memory Inc | 半導体装置の製造方法、半導体装置及びデータ処理システム |
KR101763420B1 (ko) * | 2010-09-16 | 2017-08-01 | 삼성전자주식회사 | 3차원 반도체 기억 소자 및 그 제조 방법 |
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JP2003332469A (ja) * | 2002-05-10 | 2003-11-21 | Fujitsu Ltd | 不揮発性半導体記憶装置及びその製造方法 |
KR100657964B1 (ko) * | 2005-07-22 | 2006-12-14 | 삼성전자주식회사 | 한 쌍의 핀-타입 채널 영역들에 대응하는 단일 게이트전극을 갖는 반도체 소자 및 랜덤 액세스 메모리 |
JP2007158176A (ja) * | 2005-12-07 | 2007-06-21 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
JP2007329254A (ja) * | 2006-06-07 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置およびその製造方法 |
KR100833426B1 (ko) * | 2006-12-04 | 2008-05-29 | 주식회사 하이닉스반도체 | 비휘발성 판독 전용 메모리 및 이의 형성 방법 |
JP2008294220A (ja) * | 2007-05-24 | 2008-12-04 | Toshiba Corp | 半導体メモリ装置 |
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US20090315097A1 (en) | 2009-12-24 |
US7902592B2 (en) | 2011-03-08 |
JP2009152413A (ja) | 2009-07-09 |
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