JP5350819B2 - ゲルマニウム−アンチモン−テルル合金膜を製造するための原子層堆積（ａｌｄ）方法 - Google Patents
ゲルマニウム−アンチモン−テルル合金膜を製造するための原子層堆積（ａｌｄ）方法 Download PDFInfo
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- JP5350819B2 JP5350819B2 JP2009016913A JP2009016913A JP5350819B2 JP 5350819 B2 JP5350819 B2 JP 5350819B2 JP 2009016913 A JP2009016913 A JP 2009016913A JP 2009016913 A JP2009016913 A JP 2009016913A JP 5350819 B2 JP5350819 B2 JP 5350819B2
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- branched
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- antimony
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- 238000000231 atomic layer deposition Methods 0.000 title claims description 22
- 229910045601 alloy Inorganic materials 0.000 title description 5
- 239000000956 alloy Substances 0.000 title description 5
- 229910000618 GeSbTe Inorganic materials 0.000 title description 4
- 238000004519 manufacturing process Methods 0.000 title description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 125000003118 aryl group Chemical group 0.000 claims description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 125000003342 alkenyl group Chemical group 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 13
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 12
- 125000004122 cyclic group Chemical group 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- KFMLSKLCIQLEQK-UHFFFAOYSA-N [SiH3].[Sb] Chemical compound [SiH3].[Sb] KFMLSKLCIQLEQK-UHFFFAOYSA-N 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- SFHJDYHBPMNNKO-UHFFFAOYSA-N antimony;trimethylsilicon Chemical group C[Si](C)(C)[Sb]([Si](C)(C)C)[Si](C)(C)C SFHJDYHBPMNNKO-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- GWFYHOXZOBEFTG-UHFFFAOYSA-N [GeH3]N Chemical compound [GeH3]N GWFYHOXZOBEFTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000002052 molecular layer Substances 0.000 claims description 2
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 4
- 229910001215 Te alloy Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 24
- 239000000203 mixture Substances 0.000 description 16
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 238000004821 distillation Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- -1 silylantimony compound Chemical class 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 4
- NGKZLZJWIOWBBW-UHFFFAOYSA-N antimony;dimethyl-$l^{3}-silane Chemical compound C[SiH](C)[Sb]([SiH](C)C)[SiH](C)C NGKZLZJWIOWBBW-UHFFFAOYSA-N 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- GMEFXBFKMIZRMO-UHFFFAOYSA-N aminogermanium Chemical compound [Ge]N GMEFXBFKMIZRMO-UHFFFAOYSA-N 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004770 chalcogenides Chemical group 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- JKUUTODNPMRHHZ-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)germyl]methanamine Chemical compound CN(C)[Ge](N(C)C)(N(C)C)N(C)C JKUUTODNPMRHHZ-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/20—Silicates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G30/00—Compounds of antimony
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
- C07F9/90—Antimony compounds
- C07F9/902—Compounds without antimony-carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2398908P | 2008-01-28 | 2008-01-28 | |
| US61/023,989 | 2008-01-28 | ||
| US12/355,325 | 2009-01-16 | ||
| US12/355,325 US8318252B2 (en) | 2008-01-28 | 2009-01-16 | Antimony precursors for GST films in ALD/CVD processes |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012220284A Division JP5778648B2 (ja) | 2008-01-28 | 2012-10-02 | シリルアンチモン前駆体及びそれを用いた原子層堆積（ａｌｄ）方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009215645A JP2009215645A (ja) | 2009-09-24 |
| JP5350819B2 true JP5350819B2 (ja) | 2013-11-27 |
Family
ID=40577856
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009016913A Expired - Fee Related JP5350819B2 (ja) | 2008-01-28 | 2009-01-28 | ゲルマニウム−アンチモン−テルル合金膜を製造するための原子層堆積（ａｌｄ）方法 |
| JP2012220284A Expired - Fee Related JP5778648B2 (ja) | 2008-01-28 | 2012-10-02 | シリルアンチモン前駆体及びそれを用いた原子層堆積（ａｌｄ）方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012220284A Expired - Fee Related JP5778648B2 (ja) | 2008-01-28 | 2012-10-02 | シリルアンチモン前駆体及びそれを用いた原子層堆積（ａｌｄ）方法 |
Country Status (6)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG171683A1 (en) | 2006-05-12 | 2011-06-29 | Advanced Tech Materials | Low temperature deposition of phase change memory materials |
| CN101495672B (zh) | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| SG178736A1 (en) * | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| CN102076882B (zh) * | 2008-04-25 | 2013-12-25 | Asm国际公司 | 用于碲和硒薄膜的ald的前体的合成和应用 |
| US8697486B2 (en) | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
| EP2494587B1 (en) | 2009-10-26 | 2020-07-15 | ASM International N.V. | Atomic layer deposition of antimony containing thin films |
| US20110108792A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Single Crystal Phase Change Material |
| US8148197B2 (en) | 2010-07-27 | 2012-04-03 | Micron Technology, Inc. | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same |
| TWI450999B (zh) * | 2011-08-19 | 2014-09-01 | Tokyo Electron Ltd | Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium |
| JP5780981B2 (ja) * | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | ゲルマニウム薄膜の成膜方法 |
| JP5905858B2 (ja) * | 2012-08-13 | 2016-04-20 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | Ａｌｄ／ｃｖｄプロセスにおけるｇｓｔ膜のための前駆体 |
| US9214630B2 (en) * | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
| WO2014210328A1 (en) * | 2013-06-26 | 2014-12-31 | Applied Materials, Inc. | Methods of depositing a metal alloy film |
| JP6302081B2 (ja) * | 2014-03-04 | 2018-03-28 | ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ | ゲルマニウムまたは酸化ゲルマニウムの原子層堆積 |
| CN104341355B (zh) * | 2014-10-22 | 2017-02-08 | 江南大学 | 用于相变存储材料的氨基嘧啶Ge(Ⅱ)前质体及其制备方法 |
| US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
| US9929006B2 (en) * | 2016-07-20 | 2018-03-27 | Micron Technology, Inc. | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10152493A (ja) * | 1996-09-30 | 1998-06-09 | Shin Etsu Chem Co Ltd | アルキルハロシランの製造方法 |
| KR101027485B1 (ko) | 2001-02-12 | 2011-04-06 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
| KR100642634B1 (ko) * | 2004-06-29 | 2006-11-10 | 삼성전자주식회사 | 게이트 상전이막 패턴을 갖는 피이. 램들 및 그 형성방법들 |
| KR100655796B1 (ko) * | 2004-08-17 | 2006-12-11 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| KR100566699B1 (ko) * | 2004-08-17 | 2006-04-03 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| KR100652378B1 (ko) * | 2004-09-08 | 2006-12-01 | 삼성전자주식회사 | 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법 |
| JP2006124262A (ja) | 2004-11-01 | 2006-05-18 | Dainippon Printing Co Ltd | ＩｎＳｂナノ粒子 |
| KR100640620B1 (ko) | 2004-12-27 | 2006-11-02 | 삼성전자주식회사 | 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법 |
| KR100618879B1 (ko) * | 2004-12-27 | 2006-09-01 | 삼성전자주식회사 | 게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자 |
| KR100585175B1 (ko) * | 2005-01-31 | 2006-05-30 | 삼성전자주식회사 | 화학 기상 증착법에 의한 ＧｅＳｂＴｅ 박막의 제조방법 |
| KR100688532B1 (ko) | 2005-02-14 | 2007-03-02 | 삼성전자주식회사 | 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자 |
| SG171683A1 (en) | 2006-05-12 | 2011-06-29 | Advanced Tech Materials | Low temperature deposition of phase change memory materials |
| KR100780865B1 (ko) * | 2006-07-19 | 2007-11-30 | 삼성전자주식회사 | 상변화막을 포함하는 반도체 소자의 형성 방법 |
| WO2008042981A2 (en) * | 2006-10-05 | 2008-04-10 | Asm America, Inc. | Ald of metal silicate films |
| CN101495672B (zh) | 2006-11-02 | 2011-12-07 | 高级技术材料公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
| KR20100084157A (ko) * | 2007-09-17 | 2010-07-23 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Ｇｓｔ 필름 증착용 텔루륨 전구체 |
| SG178736A1 (en) * | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US7960205B2 (en) * | 2007-11-27 | 2011-06-14 | Air Products And Chemicals, Inc. | Tellurium precursors for GST films in an ALD or CVD process |
| CN102076882B (zh) * | 2008-04-25 | 2013-12-25 | Asm国际公司 | 用于碲和硒薄膜的ald的前体的合成和应用 |
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2009
- 2009-01-16 US US12/355,325 patent/US8318252B2/en active Active
- 2009-01-23 TW TW098103029A patent/TWI382104B/zh not_active IP Right Cessation
- 2009-01-27 EP EP09151404A patent/EP2083096B1/en not_active Not-in-force
- 2009-01-28 JP JP2009016913A patent/JP5350819B2/ja not_active Expired - Fee Related
- 2009-01-28 KR KR1020090006706A patent/KR101068013B1/ko active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| US8318252B2 (en) | 2012-11-27 |
| KR101068013B1 (ko) | 2011-09-26 |
| JP5778648B2 (ja) | 2015-09-16 |
| JP2009215645A (ja) | 2009-09-24 |
| CN101497999A (zh) | 2009-08-05 |
| TW200934885A (en) | 2009-08-16 |
| EP2083096A1 (en) | 2009-07-29 |
| CN101497999B (zh) | 2012-08-08 |
| TWI382104B (zh) | 2013-01-11 |
| JP2013060663A (ja) | 2013-04-04 |
| KR20090082873A (ko) | 2009-07-31 |
| EP2083096B1 (en) | 2013-01-02 |
| US20090191330A1 (en) | 2009-07-30 |
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