JP5345397B2 - 化学機械研磨応用で使用するための超純度コロイド状シリカ - Google Patents

化学機械研磨応用で使用するための超純度コロイド状シリカ Download PDF

Info

Publication number
JP5345397B2
JP5345397B2 JP2008533465A JP2008533465A JP5345397B2 JP 5345397 B2 JP5345397 B2 JP 5345397B2 JP 2008533465 A JP2008533465 A JP 2008533465A JP 2008533465 A JP2008533465 A JP 2008533465A JP 5345397 B2 JP5345397 B2 JP 5345397B2
Authority
JP
Japan
Prior art keywords
colloidal silica
ppm
composition
concentration
silica particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008533465A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009510224A (ja
JP2009510224A5 (enExample
Inventor
マーウリカー ディーパック
ワン ユー
エー デルブリッジ ケン
アール エム モヤーツ ゲルト
エイチ モーセニ サイード
アール クーンツ ニコル
フー ビン
ウェン リチン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Planar Solutions LLC
Original Assignee
Planar Solutions LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Planar Solutions LLC filed Critical Planar Solutions LLC
Publication of JP2009510224A publication Critical patent/JP2009510224A/ja
Publication of JP2009510224A5 publication Critical patent/JP2009510224A5/ja
Application granted granted Critical
Publication of JP5345397B2 publication Critical patent/JP5345397B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C01B33/1435—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates using ion exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/146—After-treatment of sols
    • C01B33/148—Concentration; Drying; Dehydration; Stabilisation; Purification
    • C01B33/1485—Stabilisation, e.g. prevention of gelling; Purification
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
JP2008533465A 2005-09-26 2006-09-22 化学機械研磨応用で使用するための超純度コロイド状シリカ Active JP5345397B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72061105P 2005-09-26 2005-09-26
US60/720,611 2005-09-26
PCT/US2006/037065 WO2007038321A2 (en) 2005-09-26 2006-09-22 Ultrapure colloidal silica for use in chemical mechanical polishing applications

Publications (3)

Publication Number Publication Date
JP2009510224A JP2009510224A (ja) 2009-03-12
JP2009510224A5 JP2009510224A5 (enExample) 2013-02-07
JP5345397B2 true JP5345397B2 (ja) 2013-11-20

Family

ID=37900323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008533465A Active JP5345397B2 (ja) 2005-09-26 2006-09-22 化学機械研磨応用で使用するための超純度コロイド状シリカ

Country Status (6)

Country Link
US (3) US8211193B2 (enExample)
EP (1) EP1966410B1 (enExample)
JP (1) JP5345397B2 (enExample)
KR (2) KR20080059266A (enExample)
TW (1) TWI404793B (enExample)
WO (1) WO2007038321A2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007038321A2 (en) * 2005-09-26 2007-04-05 Planar Solutions, Llc Ultrapure colloidal silica for use in chemical mechanical polishing applications
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
JPWO2008123373A1 (ja) * 2007-03-27 2010-07-15 扶桑化学工業株式会社 コロイダルシリカ及びその製造方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
TWI555830B (zh) * 2010-11-08 2016-11-01 福吉米股份有限公司 研磨用組成物及利用其的半導體基板的研磨方法
JP2014511330A (ja) 2011-02-22 2014-05-15 エボニック デグサ ゲーエムベーハー アルカリ金属ケイ酸塩溶液からの高純度水性コロイダルシリカゾルの製造方法
CN102690604A (zh) * 2011-03-24 2012-09-26 中国科学院上海微系统与信息技术研究所 化学机械抛光液
TWI681929B (zh) * 2011-12-28 2020-01-11 日揮觸媒化成股份有限公司 高純度氧化矽溶膠及其製造方法
US20160152998A1 (en) 2013-06-24 2016-06-02 North Carolina State University Transgenic Expression Of Archaea Superoxide Reductase
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
US9610548B2 (en) 2014-02-28 2017-04-04 Pall Corporation Composite porous polymeric membrane with high void volume
US9302228B2 (en) 2014-02-28 2016-04-05 Pall Corporation Charged porous polymeric membrane with high void volume
US9309126B2 (en) 2014-02-28 2016-04-12 Pall Corporation Rapidly dissolvable nanoparticles
US9446355B2 (en) 2014-02-28 2016-09-20 Pall Corporation Porous polymeric membrane with high void volume
US9764292B2 (en) 2014-02-28 2017-09-19 Pall Corporation Porous polymeric membrane with high void volume
US9776142B2 (en) 2014-02-28 2017-10-03 Pall Corporation Porous polymeric membrane with high void volume
US9561473B2 (en) 2014-02-28 2017-02-07 Pall Corporation Charged hollow fiber membrane having hexagonal voids
US9737860B2 (en) 2014-02-28 2017-08-22 Pall Corporation Hollow fiber membrane having hexagonal voids
JP6366308B2 (ja) * 2014-03-12 2018-08-01 株式会社ディスコ 加工方法
TWI593628B (zh) * 2014-06-25 2017-08-01 卡博特微電子公司 用於製造化學機械拋光組合物之方法
CN105802507A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN111087930A (zh) * 2019-12-23 2020-05-01 长江存储科技有限责任公司 一种化学机械抛光研磨剂的制备方法及化学机械抛光方法
KR102513110B1 (ko) * 2020-08-28 2023-03-24 (주)에이스나노켐 초고순도 콜로이달 실리카 입자의 제조방법 및 그에 의해 제조된 초고순도 콜로이달 실리카 입자
JP2024530709A (ja) 2021-08-19 2024-08-23 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング シリカ粒子を製造するための方法、かかる方法によって製造されるシリカ粒子、かかるシリカ粒子の組成物および使用
CN115784245B (zh) * 2022-12-29 2024-01-16 苏州西丽卡电子材料有限公司 一种疏水性高纯度微米级球形二氧化硅粉体的制备方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947376A (en) * 1969-04-28 1976-03-30 Nalco Chemical Company Silica sols containing large particle size silica
US5063179A (en) * 1990-03-02 1991-11-05 Cabot Corporation Process for making non-porous micron-sized high purity silica
US5168928A (en) * 1991-08-15 1992-12-08 Halliburton Company Preparation and use of gelable silicate solutions in oil field applications
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
EP0773270B1 (en) * 1995-11-10 2001-01-24 Tokuyama Corporation Polishing slurries and a process for the production thereof
US6062952A (en) * 1997-06-05 2000-05-16 Robinson; Karl M. Planarization process with abrasive polishing slurry that is selective to a planarized surface
CO5070714A1 (es) * 1998-03-06 2001-08-28 Nalco Chemical Co Proceso para la preparacion de silice coloidal estable
KR100574259B1 (ko) 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
JP3721497B2 (ja) * 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
TWI296006B (enExample) * 2000-02-09 2008-04-21 Jsr Corp
JP2001294417A (ja) * 2000-04-12 2001-10-23 Nippon Chem Ind Co Ltd コロイダルシリカの製造方法
JP3837277B2 (ja) 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
US6747065B1 (en) * 2000-09-01 2004-06-08 Chemical Products Corporation System and method for producing high purity colloidal silica and potassium hydroxide
US6906109B2 (en) * 2000-09-01 2005-06-14 Chemical Products Corp. Method for controling uniformity of colloidal silica particle size
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
CN100453486C (zh) * 2001-08-02 2009-01-21 3M创新有限公司 磨粒及其制备和使用方法
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2003218069A (ja) * 2002-01-23 2003-07-31 Fujimi Inc 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物
DE10211958A1 (de) * 2002-03-18 2003-10-16 Wacker Chemie Gmbh Hochreines Silica-Pulver, Verfahren und Vorrichtung zu seiner Herstellung
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
KR100855474B1 (ko) 2002-12-23 2008-09-01 주식회사 동진쎄미켐 산성 영역에서 콜로이달 실리카의 분산안정성과 과산화물산화제의 분해안정성이 뛰어난 구리 배선용 화학-기계적연마슬러리 조성물
JP2004349426A (ja) 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US6979252B1 (en) * 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
JP2008523638A (ja) 2004-12-13 2008-07-03 プラナー ソリューションズ エルエルシー コロイド状シリカをベースとする化学機械研磨用スラリー
US20060283095A1 (en) 2005-06-15 2006-12-21 Planar Solutions, Llc Fumed silica to colloidal silica conversion process
WO2007038321A2 (en) * 2005-09-26 2007-04-05 Planar Solutions, Llc Ultrapure colloidal silica for use in chemical mechanical polishing applications

Also Published As

Publication number Publication date
JP2009510224A (ja) 2009-03-12
EP1966410B1 (en) 2018-12-26
US20070075292A1 (en) 2007-04-05
KR20080059266A (ko) 2008-06-26
US20070254964A1 (en) 2007-11-01
US20120145950A1 (en) 2012-06-14
US8779011B2 (en) 2014-07-15
EP1966410A2 (en) 2008-09-10
WO2007038321A2 (en) 2007-04-05
TW200724655A (en) 2007-07-01
US8211193B2 (en) 2012-07-03
WO2007038321A3 (en) 2007-07-12
EP1966410A4 (en) 2016-03-23
TWI404793B (zh) 2013-08-11
KR20100093620A (ko) 2010-08-25
KR101214060B1 (ko) 2012-12-20

Similar Documents

Publication Publication Date Title
JP5345397B2 (ja) 化学機械研磨応用で使用するための超純度コロイド状シリカ
JP3616802B2 (ja) スラリー組成物およびそれを用いる化学機械的研磨方法
JP6392913B2 (ja) 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
RU2356926C2 (ru) Абразивные частицы для механической полировки
US6669748B2 (en) Dispersion liquid of silica particles for polishing, method of producing the same, and polishing agent
JP5002175B2 (ja) 研磨スラリーおよびウエハ再生方法
JP2009510224A5 (enExample)
JP5596344B2 (ja) コロイダルシリカを利用した酸化ケイ素研磨方法
CN111566785A (zh) 具有经改善的形貌的钨大量抛光方法
US20080038996A1 (en) Polishing composition for semiconductor wafer, production method thereof, and polishing method
WO2000000560A2 (en) Chemical mechanical polishing slurry and method for using same
WO2010033156A2 (en) Barrier slurry for low-k dielectrics
US11802220B2 (en) Silica-based slurry for selective polishing of carbon-based films
KR20060131605A (ko) 퓸드 실리카의 콜로이달 실리카로의 전환 방법
CN1539000A (zh) 硅石和硅石基淤浆
KR20210088732A (ko) 구리 장벽 cmp를 위한 조성물 및 방법
JP2010028079A (ja) 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2006012969A (ja) 研磨用シリカゾルおよびその製造方法
JP5333743B2 (ja) 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
TW202530131A (zh) 氧化矽顆粒、含此顆粒之組合物及此等顆粒與組合物之用途

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090902

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101227

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120809

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120822

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121122

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121130

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20121214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130716

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130814

R150 Certificate of patent or registration of utility model

Ref document number: 5345397

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250