JP5344915B2 - 高パワー半導体光電子光学デバイス - Google Patents
高パワー半導体光電子光学デバイス Download PDFInfo
- Publication number
- JP5344915B2 JP5344915B2 JP2008518984A JP2008518984A JP5344915B2 JP 5344915 B2 JP5344915 B2 JP 5344915B2 JP 2008518984 A JP2008518984 A JP 2008518984A JP 2008518984 A JP2008518984 A JP 2008518984A JP 5344915 B2 JP5344915 B2 JP 5344915B2
- Authority
- JP
- Japan
- Prior art keywords
- optoelectronic device
- region
- semiconductor
- distance
- semiconductor optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
- H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (23)
- 対向する端部区間を有する活性領域と、前記対向する端部区間の末端をそれぞれなす前面ファセットおよび後面ファセットと、を有する半導体本体と、
前記活性領域にキャリアを注入するための前記半導体本体の少なくとも一部に亘って延びる電極メタライゼーションを構成する電気接触アセンブリと、
前記対向する端部区間の少なくとも一方で前記電極メタライゼーションから前記活性領域への前記キャリア注入を制限するように前記電気接触アセンブリの完全絶縁領域および非絶縁領域を定義するために前記半導体本体の一部に亘って延びる分離層と、
前記完全絶縁領域および非絶縁領域の間の電流移行領域を定義するために、前記電気接触アセンブリの完全絶縁領域および非絶縁領域の間に形成される前記分離層のエッジ領域と、
を備え、
前記分離層の前記エッジ領域は、前記半導体本体の材料のキャリア拡散長と同程度かそれ未満の距離だけ離れている繰返し要素を有するパターンを含み、
前記電流移行領域において、前記半導体本体は前記分離層によって一部だけ覆われ、さらに前記活性領域へキャリアの注入が起こる場所における前記分離層の1箇所以上のエッジの全長は前記形成されたエッジ領域で単一ステップエッジ領域によって提供される注入電流勾配よりも急峻ではない注入電流勾配を前記電流移行領域内に提供するパターン形成によって増加される、半導体光電子デバイス。 - 前記パターン形成が、前記完全絶縁領域と前記非絶縁領域との間に段階的電流移行部を設けるために、少なくとも一部が次第に変化する、前記分離層の端部における非線形中間区間を含む、請求項1に記載の半導体光電子工学デバイス。
- 前記パターン形成が、前記分離層の前記エッジ領域において前記完全絶縁領域と前記非絶縁領域との間に実質的にステップのない、すなわち実際には連続的な電流移行部を備える中間区間を含む、請求項1または2に記載の半導体光電子デバイス。
- 前記パターン形成が、前記完全絶縁領域と前記非絶縁領域との間に前記中間区間を含み、前記中間区間は前記分離層の前記一箇所以上のエッジは実質的にジグザグ状または同様の歯のパターンを含む、請求項1〜3のいずれか1項に記載の半導体光電子デバイス。
- 前記歯のパターンの隣接するコーナーの間の繰返し距離が前記半導体本体の材料のキャリア拡散距離以下である、請求項4に記載の半導体光電子工学デバイス。
- 前記歯のパターンの隣接するコーナーの間の繰返し距離が0.5〜1.0μmの間か、好ましくは1〜5μmの間である、請求項4または5に記載の半導体光電子デバイス。
- 前記歯のパターンの全体の長さが、前記半導体本体の材料の前記キャリア拡散距離よりも大きいか、好ましくは前記拡散距離の3倍よりも大きい距離にわたって前記非絶縁領域内に延びる、請求項4、5または6に記載の半導体光電子デバイス。
- 前記歯のパターンの全体の長さが、2〜50μmの間か、好ましくは4〜25μmの間の距離にわたって前記非絶縁領域内に延びる、請求項4または5に記載の半導体光電子デバイス。
- 前記歯の長さと前記歯の端部間の離間との比によって定義されるアスペクト比が、1よりも大きいか、好ましくは3よりも大きい、請求項4〜8のいずれか1項に記載の半導体光電子工学デバイス。
- 前記パターン形成が、孔のパターンを含む前記完全絶縁領域と前記非絶縁領域との間の前記中間区間を有する、請求項1〜9のいずれか1項に記載の半導体光電子デバイス。
- 前記孔のパターンが、前記活性領域へキャリアの注入が起こる場所において前記分離層のさらなるエッジを提供するために、および前記中間区間の電気的性質に漸変を生成するために、異なったサイズの孔を含む、請求項10に記載の半導体光電子デバイス。
- 前記孔の直径が前記半導体本体の材料のキャリア拡散距離以下である、請求項10または11に記載の半導体光電子デバイス。
- 前記孔の直径が0.5〜10μmの間である、請求項10、11または12に記載の半導体光電子デバイス。
- 前記孔の間の距離が前記半導体本体の材料のキャリア拡散距離以下である、請求項10〜13のいずれか1項に記載の半導体光電子デバイス。
- 前記孔の間の距離が0.5〜10μmの間である、請求項10〜14のいずれか1項に記載の半導体光電子デバイス。
- 前記パターン形成が、矩形歯の櫛状パターンを含む前記分離層の前記エッジ領域における中間区間を含む、請求項1〜15のいずれか1項に記載の半導体光電子デバイス。
- 前記櫛状パターンの前記歯が1よりも大きいか、好ましくは3よりも大きいアスペクト比、すなわち長さ対幅の比を有する、請求項16に記載の半導体光電子デバイス。
- 前記櫛状パターンの前記隣接する歯の間の前記繰返し距離が前記半導体本体の材料の前記キャリア拡散距離以下である、請求項16または17に記載の半導体光電子デバイス。
- 前記櫛状パターンの前記隣接する歯の間の前記繰返し距離が0.5〜10μmの間である、請求項16、17または18に記載の半導体光電子デバイス。
- 前記櫛状パターンの全体の長さが前記半導体本体の前記材料の前記キャリア拡散距離よりも大きいか、好ましくは前記拡散距離の3倍よりも大きい距離にわたって前記非絶縁領域内に延びる、請求項16〜19のいずれか1項に記載の半導体光電子デバイス。
- 前記櫛状パターンの全体の長さが2〜50μmの間の距離にわたって前記非絶縁領域内に延びる、請求項16〜20のいずれか1項に記載の半導体光電子デバイス。
- 2つの分離層が設けられ、各々の分離層が前記半導体光電子デバイスの前記前面ファセットに対応する端部区間および前記後面ファセットに対応する端部区間にある、請求項1〜21のいずれか1項に記載の半導体光電子デバイス。
- 前記繰返し要素間の距離は、0.5μm以上10μm以下である、請求項1乃至22の何れか1項に記載の半導体光電子デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0513038A GB2427751A (en) | 2005-06-28 | 2005-06-28 | High power semiconductor opto-electronic device |
GB0513038.0 | 2005-06-28 | ||
PCT/GB2006/050172 WO2007000614A1 (en) | 2005-06-28 | 2006-06-28 | High power semiconductor opto-electronic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008544560A JP2008544560A (ja) | 2008-12-04 |
JP5344915B2 true JP5344915B2 (ja) | 2013-11-20 |
Family
ID=34856186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008518984A Active JP5344915B2 (ja) | 2005-06-28 | 2006-06-28 | 高パワー半導体光電子光学デバイス |
Country Status (4)
Country | Link |
---|---|
US (1) | US8111727B2 (ja) |
JP (1) | JP5344915B2 (ja) |
GB (1) | GB2427751A (ja) |
WO (1) | WO2007000614A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2427752A (en) | 2005-06-28 | 2007-01-03 | Bookham Technology Plc | High power semiconductor laser diode |
US7567603B2 (en) * | 2006-09-20 | 2009-07-28 | Jds Uniphase Corporation | Semiconductor laser diode with advanced window structure |
DE102008014092A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen |
JP2010267871A (ja) * | 2009-05-15 | 2010-11-25 | Sony Corp | 半導体レーザおよびその製造方法 |
WO2015002683A2 (en) | 2013-04-09 | 2015-01-08 | Nlight Photonics Corporation | Diode laser packages with flared laser oscillator waveguides |
US9166369B2 (en) | 2013-04-09 | 2015-10-20 | Nlight Photonics Corporation | Flared laser oscillator waveguide |
US10186836B2 (en) | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
US9590389B2 (en) * | 2014-10-31 | 2017-03-07 | Nichia Corporation | Semiconductor laser element |
JP6682800B2 (ja) * | 2014-10-31 | 2020-04-15 | 日亜化学工業株式会社 | 半導体レーザ素子 |
US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
US10505332B1 (en) | 2018-06-04 | 2019-12-10 | Ii-Vi Delaware, Inc. | Ex-situ conditioning of laser facets and passivated devices formed using the same |
US10714900B2 (en) | 2018-06-04 | 2020-07-14 | Ii-Vi Delaware, Inc. | Ex-situ conditioning of laser facets and passivated devices formed using the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4791646A (en) * | 1985-07-31 | 1988-12-13 | California Institute Of Technology | Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns |
JPH0563289A (ja) * | 1991-05-31 | 1993-03-12 | Shimadzu Corp | 広ストライプ型半導体レーザ |
JP3242955B2 (ja) * | 1991-10-21 | 2001-12-25 | 株式会社東芝 | 半導体レーザ装置 |
JP3213377B2 (ja) * | 1992-05-22 | 2001-10-02 | 三洋電機株式会社 | 半導体レーザ |
JPH07263811A (ja) * | 1994-03-25 | 1995-10-13 | Hitachi Ltd | 半導体レーザ装置 |
JPH09321379A (ja) * | 1996-05-29 | 1997-12-12 | Shimadzu Corp | 半導体レーザ |
JP3630395B2 (ja) * | 1999-06-28 | 2005-03-16 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
TW413958B (en) * | 1999-07-19 | 2000-12-01 | Ind Tech Res Inst | Semiconductor laser structure |
JP4514861B2 (ja) * | 1999-11-29 | 2010-07-28 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法および半導体装置の作製方法 |
JP2002076502A (ja) * | 2000-08-31 | 2002-03-15 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JP3775724B2 (ja) * | 2000-09-13 | 2006-05-17 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
JP2002261379A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Electric Corp | 半導体デバイスおよびそれを応用した光半導体デバイス |
US6782024B2 (en) * | 2001-05-10 | 2004-08-24 | Bookham Technology Plc | High power semiconductor laser diode |
JP2003332483A (ja) * | 2002-05-16 | 2003-11-21 | Hitachi Ltd | 配線基板とそれを用いた電子装置 |
GB2427752A (en) | 2005-06-28 | 2007-01-03 | Bookham Technology Plc | High power semiconductor laser diode |
-
2005
- 2005-06-28 GB GB0513038A patent/GB2427751A/en not_active Withdrawn
-
2006
- 2006-06-28 US US11/993,247 patent/US8111727B2/en active Active
- 2006-06-28 WO PCT/GB2006/050172 patent/WO2007000614A1/en active Application Filing
- 2006-06-28 JP JP2008518984A patent/JP5344915B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
GB2427751A (en) | 2007-01-03 |
US20100220762A1 (en) | 2010-09-02 |
JP2008544560A (ja) | 2008-12-04 |
US8111727B2 (en) | 2012-02-07 |
WO2007000614A1 (en) | 2007-01-04 |
GB0513038D0 (en) | 2005-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5344915B2 (ja) | 高パワー半導体光電子光学デバイス | |
US4251780A (en) | Stripe offset geometry in injection lasers to achieve transverse mode control | |
JP5222724B2 (ja) | 高パワー半導体レーザダイオード | |
GB2432456A (en) | High power semiconductor laser diode | |
US4803691A (en) | Lateral superradiance suppressing diode laser bar | |
US4958202A (en) | Semiconductor light-emitting device and method of manufacturing the same | |
JP2006074051A (ja) | 面発光レーザのための放射光を出射する半導体基体およびその製造方法 | |
JP4599700B2 (ja) | 分布帰還型半導体レーザ | |
US20100020836A1 (en) | Use of current channeling in multiple node laser systems and methods thereof | |
JP3024611B2 (ja) | 半導体レーザおよびその製造方法 | |
US6822990B2 (en) | Semiconductor laser device | |
KR20060038057A (ko) | 반도체 레이저 소자 및 그 제조 방법 | |
JP3401714B2 (ja) | 光半導体装置 | |
US4974233A (en) | Semiconductor laser device | |
JPH07283490A (ja) | 光半導体装置 | |
JP4799847B2 (ja) | 半導体レーザ素子及びその製造方法 | |
US20040081214A1 (en) | Narrow lateral waveguide laser | |
JP3255111B2 (ja) | 半導体レーザ及びその製造方法 | |
US20050078724A1 (en) | Single mode distributed feedback lasers | |
JP2988552B2 (ja) | 半導体レーザ装置及びその製造方法 | |
JPS6358390B2 (ja) | ||
JP2605478B2 (ja) | 半導体レーザ装置の製造方法 | |
JP2001077466A (ja) | 半導体レーザ | |
JPH11220211A (ja) | 自励発振型半導体レーザ | |
JPS61279192A (ja) | 半導体レ−ザ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090625 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120514 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120925 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130124 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130329 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130409 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130708 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130813 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5344915 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |