JP2008544560A - 高パワー半導体光電子光学デバイス - Google Patents
高パワー半導体光電子光学デバイス Download PDFInfo
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- JP2008544560A JP2008544560A JP2008518984A JP2008518984A JP2008544560A JP 2008544560 A JP2008544560 A JP 2008544560A JP 2008518984 A JP2008518984 A JP 2008518984A JP 2008518984 A JP2008518984 A JP 2008518984A JP 2008544560 A JP2008544560 A JP 2008544560A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
- H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (16)
- 半導体本体と、
2つの端部区間をもつ活性領域と、
前記端部区間を閉じる前面ファセットおよび後面ファセットと、
電気接触アセンブリであって、
前記活性領域にキャリアを注入するための前記半導体本体の少なくとも一部の上の電極メタライゼーションと、
前記端部区間の少なくとも一方で前記キャリア注入を制限し、したがって少なくとも1つの非ポンプ端部区間を設ける手段であって、前記注入制限手段が前記半導体本体の少なくとも一部の上に延びる分離層を備え、それによって前記電気接触アセンブリの完全絶縁領域および非絶縁領域を設け、それによって前記完全絶縁領域と非絶縁領域との間の前記分離層の境界の少なくとも一部が前記半導体本体の部分的適用範囲の電流移行領域を生成するパターンを呈し、したがって任意の前記完全絶縁領域と任意の非絶縁領域との間に電流移行領域を設け、前記移行領域が単一ステップよりも急激でない注入電流勾配を生成する手段とを備える電気接触アセンブリと
を含む大電流半導体光電子工学デバイス、特に高パワーレーザダイオード。 - 前記パターンが、前記完全絶縁領域と前記非絶縁領域との間に電流移行部を設けるために、少なくとも一部が次第に変化する、前記絶縁層の端部における非線形中間区間を含む、請求項1に記載のレーザダイオード。
- 前記パターンが、前記完全絶縁領域と前記非絶縁領域との間に実質的にステップのない、すなわち実際には連続的な電流移行部を備える中間区間を含む、前記請求項のいずれかに記載のレーザダイオード。
- 前記完全絶縁領域と前記非絶縁領域との間の前記中間区間が前記絶縁層の端部に本質的にジグザグ状または同様の歯のパターンを含む、前記請求項のいずれかに記載のレーザダイオード。
- 前記歯のパターンの隣接するコーナーの間の繰返し距離が前記半導体本体の材料のキャリア拡散距離以下である、請求項4に記載のレーザダイオード。
- 前記歯のパターンが、前記半導体本体の材料の前記キャリア拡散距離よりも大きいか、好ましくは前記拡散距離の3倍よりも大きい距離にわたって前記非絶縁領域内に延びる、請求項4または5に記載のレーザダイオード。
- 前記歯の長さと前記歯の端部間の離間との比によって定義されるアスペクト比が、1よりも大きいか、好ましくは3よりも大きい、請求項4、5、または6に記載のレーザダイオード。
- 前記完全絶縁領域と前記非絶縁領域との間の前記中間区間が孔のパターンを呈する、前記請求項のいずれかに記載のレーザダイオード。
- 前記孔のパターンが、前記中間区間の一部の電気的性質に漸変を生成するために孔サイズの漸変を含む、請求項8に記載のレーザダイオード。
- 前記孔の直径が前記半導体本体の材料のキャリア拡散距離以下である、請求項8または9に記載のレーザダイオード。
- 前記孔の間の距離が前記半導体本体の材料のキャリア拡散距離以下である、請求項8、9、または10に記載のレーザダイオード。
- 前記パターンが前記分離層の前記境界の矩形歯の櫛状パターンである、前記請求項のいずれかに記載のレーザダイオード。
- 前記櫛状構造の前記歯が1よりも大きいか、好ましくは3よりも大きいアスペクト比、すなわち長さ対幅の比を有する、請求項12に記載のレーザダイオード。
- 前記櫛状構造の前記隣接する歯の間の距離が前記半導体本体の材料の前記キャリア拡散距離以下である、請求項12または13に記載のレーザダイオード。
- 前記櫛状構造が前記半導体材料の前記キャリア拡散距離よりも大きいか、好ましくは前記拡散距離の3倍よりも大きい距離にわたって前記非絶縁領域内に延びる、請求項12、13、または14に記載のレーザダイオード。
- 2つの分離層が設けられ、各々の分離層が前記レーザダイオードの前部端部区間および後部端部区間にある、前記請求項のいずれかに記載のレーザダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0513038A GB2427751A (en) | 2005-06-28 | 2005-06-28 | High power semiconductor opto-electronic device |
GB0513038.0 | 2006-06-28 | ||
PCT/GB2006/050172 WO2007000614A1 (en) | 2005-06-28 | 2006-06-28 | High power semiconductor opto-electronic device |
Publications (2)
Publication Number | Publication Date |
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JP2008544560A true JP2008544560A (ja) | 2008-12-04 |
JP5344915B2 JP5344915B2 (ja) | 2013-11-20 |
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ID=34856186
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Application Number | Title | Priority Date | Filing Date |
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JP2008518984A Active JP5344915B2 (ja) | 2005-06-28 | 2006-06-28 | 高パワー半導体光電子光学デバイス |
Country Status (4)
Country | Link |
---|---|
US (1) | US8111727B2 (ja) |
JP (1) | JP5344915B2 (ja) |
GB (1) | GB2427751A (ja) |
WO (1) | WO2007000614A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092408A (ja) * | 2014-10-31 | 2016-05-23 | 日亜化学工業株式会社 | 半導体レーザ素子 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2427752A (en) | 2005-06-28 | 2007-01-03 | Bookham Technology Plc | High power semiconductor laser diode |
US7567603B2 (en) * | 2006-09-20 | 2009-07-28 | Jds Uniphase Corporation | Semiconductor laser diode with advanced window structure |
DE102008014092A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip mit einem strukturierten Kontaktstreifen |
JP2010267871A (ja) * | 2009-05-15 | 2010-11-25 | Sony Corp | 半導体レーザおよびその製造方法 |
US9166369B2 (en) | 2013-04-09 | 2015-10-20 | Nlight Photonics Corporation | Flared laser oscillator waveguide |
WO2015002683A2 (en) | 2013-04-09 | 2015-01-08 | Nlight Photonics Corporation | Diode laser packages with flared laser oscillator waveguides |
US10186836B2 (en) | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
EP3016219B1 (en) * | 2014-10-31 | 2018-12-26 | Nichia Corporation | Semiconductor laser element |
US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
US10714900B2 (en) | 2018-06-04 | 2020-07-14 | Ii-Vi Delaware, Inc. | Ex-situ conditioning of laser facets and passivated devices formed using the same |
US10505332B1 (en) | 2018-06-04 | 2019-12-10 | Ii-Vi Delaware, Inc. | Ex-situ conditioning of laser facets and passivated devices formed using the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0563289A (ja) * | 1991-05-31 | 1993-03-12 | Shimadzu Corp | 広ストライプ型半導体レーザ |
JPH05327114A (ja) * | 1992-05-22 | 1993-12-10 | Sanyo Electric Co Ltd | 半導体レーザ |
JPH09321379A (ja) * | 1996-05-29 | 1997-12-12 | Shimadzu Corp | 半導体レーザ |
JP2002261379A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Electric Corp | 半導体デバイスおよびそれを応用した光半導体デバイス |
JP2003017805A (ja) * | 2001-05-10 | 2003-01-17 | Nortel Networks Optical Components (Switzerland) Gmbh | 高出力半導体レーザー・ダイオード |
Family Cites Families (10)
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US4791646A (en) * | 1985-07-31 | 1988-12-13 | California Institute Of Technology | Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns |
JP3242955B2 (ja) | 1991-10-21 | 2001-12-25 | 株式会社東芝 | 半導体レーザ装置 |
JPH07263811A (ja) | 1994-03-25 | 1995-10-13 | Hitachi Ltd | 半導体レーザ装置 |
JP3630395B2 (ja) * | 1999-06-28 | 2005-03-16 | シャープ株式会社 | 半導体レーザ素子およびその製造方法 |
TW413958B (en) | 1999-07-19 | 2000-12-01 | Ind Tech Res Inst | Semiconductor laser structure |
JP4514861B2 (ja) * | 1999-11-29 | 2010-07-28 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法および半導体装置の作製方法 |
JP2002076502A (ja) * | 2000-08-31 | 2002-03-15 | Sanyo Electric Co Ltd | 半導体レーザ素子 |
JP3775724B2 (ja) * | 2000-09-13 | 2006-05-17 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
JP2003332483A (ja) * | 2002-05-16 | 2003-11-21 | Hitachi Ltd | 配線基板とそれを用いた電子装置 |
GB2427752A (en) | 2005-06-28 | 2007-01-03 | Bookham Technology Plc | High power semiconductor laser diode |
-
2005
- 2005-06-28 GB GB0513038A patent/GB2427751A/en not_active Withdrawn
-
2006
- 2006-06-28 WO PCT/GB2006/050172 patent/WO2007000614A1/en active Application Filing
- 2006-06-28 US US11/993,247 patent/US8111727B2/en active Active
- 2006-06-28 JP JP2008518984A patent/JP5344915B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0563289A (ja) * | 1991-05-31 | 1993-03-12 | Shimadzu Corp | 広ストライプ型半導体レーザ |
JPH05327114A (ja) * | 1992-05-22 | 1993-12-10 | Sanyo Electric Co Ltd | 半導体レーザ |
JPH09321379A (ja) * | 1996-05-29 | 1997-12-12 | Shimadzu Corp | 半導体レーザ |
JP2002261379A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Electric Corp | 半導体デバイスおよびそれを応用した光半導体デバイス |
JP2003017805A (ja) * | 2001-05-10 | 2003-01-17 | Nortel Networks Optical Components (Switzerland) Gmbh | 高出力半導体レーザー・ダイオード |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016092408A (ja) * | 2014-10-31 | 2016-05-23 | 日亜化学工業株式会社 | 半導体レーザ素子 |
Also Published As
Publication number | Publication date |
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GB0513038D0 (en) | 2005-08-03 |
GB2427751A (en) | 2007-01-03 |
US8111727B2 (en) | 2012-02-07 |
WO2007000614A1 (en) | 2007-01-04 |
JP5344915B2 (ja) | 2013-11-20 |
US20100220762A1 (en) | 2010-09-02 |
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