JP5330709B2 - 処理チャンバへのガスフローを制御する方法及び装置 - Google Patents

処理チャンバへのガスフローを制御する方法及び装置 Download PDF

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Publication number
JP5330709B2
JP5330709B2 JP2008043004A JP2008043004A JP5330709B2 JP 5330709 B2 JP5330709 B2 JP 5330709B2 JP 2008043004 A JP2008043004 A JP 2008043004A JP 2008043004 A JP2008043004 A JP 2008043004A JP 5330709 B2 JP5330709 B2 JP 5330709B2
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gas
manifold
flow
processing chamber
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JP2008211219A5 (enExample
JP2008211219A (ja
Inventor
ロバート ゴールド エズラ
チャールズ フォーベル リチャード
パトリック クルーズ ジェームズ
アハマド リー ジャード
ゲオフリオン ブルーノ
アーサー バックバーガー ジュニア ダグラス
ジェフリー サリナス マーティン
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0324—With control of flow by a condition or characteristic of a fluid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87249—Multiple inlet with multiple outlet

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2008043004A 2007-02-26 2008-02-25 処理チャンバへのガスフローを制御する方法及び装置 Expired - Fee Related JP5330709B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/678,623 US7846497B2 (en) 2007-02-26 2007-02-26 Method and apparatus for controlling gas flow to a processing chamber
US11/678,623 2007-02-26

Publications (3)

Publication Number Publication Date
JP2008211219A JP2008211219A (ja) 2008-09-11
JP2008211219A5 JP2008211219A5 (enExample) 2013-02-14
JP5330709B2 true JP5330709B2 (ja) 2013-10-30

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Country Link
US (1) US7846497B2 (enExample)
EP (1) EP1961838A1 (enExample)
JP (1) JP5330709B2 (enExample)
KR (1) KR100975441B1 (enExample)
CN (1) CN101256935B (enExample)
SG (1) SG145668A1 (enExample)
TW (1) TW200846860A (enExample)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253696A (ja) * 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
US7743670B2 (en) * 2006-08-14 2010-06-29 Applied Materials, Inc. Method and apparatus for gas flow measurement
JP5372353B2 (ja) * 2007-09-25 2013-12-18 株式会社フジキン 半導体製造装置用ガス供給装置
US20090236447A1 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus for controlling gas injection in process chamber
US8623141B2 (en) * 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8747762B2 (en) 2009-12-03 2014-06-10 Applied Materials, Inc. Methods and apparatus for treating exhaust gas in a processing system
CN101989068B (zh) * 2010-11-05 2012-07-18 北京七星华创电子股份有限公司 基于质量流量控制器的模拟工艺系统和方法
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
US9175808B2 (en) * 2011-06-17 2015-11-03 Lam Research Corporation System and method for decreasing scrubber exhaust from gas delivery panels
KR102021510B1 (ko) * 2011-06-30 2019-09-16 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
CN103177923B (zh) * 2011-12-20 2016-05-11 中微半导体设备(上海)有限公司 一种应用于等离子处理装置的气体分布系统及验证方法
US9238865B2 (en) * 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
US9410244B2 (en) * 2012-09-04 2016-08-09 Asm Ip Holding B.V. Semiconductor processing apparatus including a plurality of reactors, and method for providing the same with process gas
US20140137961A1 (en) * 2012-11-19 2014-05-22 Applied Materials, Inc. Modular chemical delivery system
US8893923B2 (en) * 2012-11-28 2014-11-25 Intermolecular, Inc. Methods and systems for dispensing different liquids for high productivity combinatorial processing
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
US10161060B2 (en) 2013-12-19 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gas-supply system and method
US9632516B2 (en) * 2013-12-19 2017-04-25 Tawan Semiconductor Manufacturing Co., Ltd Gas-supply system and method
JP2016081945A (ja) * 2014-10-09 2016-05-16 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
CN106025158B (zh) * 2015-03-27 2020-08-11 株式会社杰士汤浅国际 蓄电元件
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) * 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10269600B2 (en) * 2016-03-15 2019-04-23 Applied Materials, Inc. Methods and assemblies for gas flow ratio control
US10453721B2 (en) 2016-03-15 2019-10-22 Applied Materials, Inc. Methods and assemblies for gas flow ratio control
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10604841B2 (en) * 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
GB2557670B (en) * 2016-12-15 2020-04-15 Thermo Fisher Scient Bremen Gmbh Improved gas flow control
CN108231620B (zh) * 2016-12-15 2021-01-19 中微半导体设备(上海)股份有限公司 一种气体流量控制装置及其气体流量控制方法
CN114797403B (zh) 2017-02-09 2024-09-10 应用材料公司 利用水蒸气和氧试剂的等离子体减量技术
KR101963339B1 (ko) * 2017-04-20 2019-03-28 가부시키가이샤 브이텍스 진공 용기 내 압력 멀티 제어 장치 및 진공 용기 내 압력 멀티 제어 방법
CN111164743B (zh) 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法
JP6878616B2 (ja) 2017-11-21 2021-05-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ボトムおよびミドルエッジリング
CN111433902A (zh) 2017-12-08 2020-07-17 朗姆研究公司 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头
WO2019152486A1 (en) * 2018-01-31 2019-08-08 Lam Research Corporation Manifold valve for multiple precursors
KR20210111872A (ko) 2018-08-13 2021-09-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
AT521586B1 (de) * 2018-08-28 2020-12-15 Avl List Gmbh Gasmischvorrichtung zur Linearisierung oder Kalibrierung von Gasanalysatoren
CN109884255A (zh) * 2019-03-26 2019-06-14 翼捷安全设备（昆山）有限公司 高精度全自动配气系统及方法
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
TW202128273A (zh) * 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
JP7296854B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 ガス供給方法及び基板処理装置
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR20220089052A (ko) * 2020-12-21 2022-06-28 삼성전자주식회사 반응 가스 공급 시스템, 이를 포함하는 원자층 증착 장치, 및 이를 이용해서 기판을 처리하는 방법
US12400833B2 (en) 2021-03-02 2025-08-26 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP7583186B2 (ja) 2021-03-03 2024-11-13 アイコール・システムズ・インク マニホールドアセンブリを備える流体流れ制御システム
TW202309974A (zh) * 2021-05-21 2023-03-01 美商蘭姆研究公司 高深寬比3d nand架構中的鎢字元線填充
TWI868717B (zh) * 2022-03-01 2025-01-01 美商艾克爾系統公司 包含有歧管構件的流體流動控制系統及方法
US20230384185A1 (en) * 2022-05-24 2023-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. On-line analysis system and method for specialty gasses
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5292788A (en) * 1976-01-30 1977-08-04 Standard Technology Gas diluting apparatus
US4887020A (en) * 1984-07-23 1989-12-12 U.S. Philips Corporation Self-compensating brushless alternator
US4590790A (en) * 1985-05-16 1986-05-27 American Meter Company Method for determining the accuracy of a gas measurement instrument
US4687020A (en) 1985-05-17 1987-08-18 Doyle James H Fluid mass flow controller
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
JP2888253B2 (ja) * 1989-07-20 1999-05-10 富士通株式会社 化学気相成長法およびその実施のための装置
JPH03156509A (ja) * 1989-11-14 1991-07-04 Stec Kk マスフローコントローラ
US5062446A (en) * 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
US5190058A (en) * 1991-05-22 1993-03-02 Medtronic, Inc. Method of using a temporary stent catheter
US5141021A (en) * 1991-09-06 1992-08-25 Stec Inc. Mass flow meter and mass flow controller
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
US5303731A (en) * 1992-06-30 1994-04-19 Unit Instruments, Inc. Liquid flow controller
US5190068A (en) 1992-07-02 1993-03-02 Brian Philbin Control apparatus and method for controlling fluid flows and pressures
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5293778A (en) * 1993-05-27 1994-03-15 General Electric Company Fluid flow measuring system
WO1995019549A1 (en) * 1994-01-14 1995-07-20 Unit Instruments, Inc. Flow meter
US5524084A (en) 1994-12-30 1996-06-04 Hewlett-Packard Company Method and apparatus for improved flow and pressure measurement and control
US5653807A (en) * 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US5662143A (en) * 1996-05-16 1997-09-02 Gasonics International Modular gas box system
US5944048A (en) * 1996-10-04 1999-08-31 Emerson Electric Co. Method and apparatus for detecting and controlling mass flow
US5911238A (en) * 1996-10-04 1999-06-15 Emerson Electric Co. Thermal mass flowmeter and mass flow controller, flowmetering system and method
US6937366B2 (en) * 1996-12-26 2005-08-30 Canon Kabushiki Kaisha Data communication system
JPH10240356A (ja) * 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
KR100251645B1 (ko) * 1997-03-21 2000-04-15 윤종용 반도체 공정용 가스 평가장치에 결합되는 샘플가스 분배 장치 및 구동방법
US5865205A (en) * 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
US5966499A (en) * 1997-07-28 1999-10-12 Mks Instruments, Inc. System for delivering a substantially constant vapor flow to a chemical process reactor
KR100269315B1 (ko) * 1997-11-24 2000-11-01 윤종용 램프가열방식의매엽식장비를이용한반도체장치의제조방법
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6269692B1 (en) * 1999-02-01 2001-08-07 Dxl Usa Inc. Mass flow measuring assembly having low pressure drop and fast response time
EP1096351A4 (en) * 1999-04-16 2004-12-15 Fujikin Kk FLUID SUPPLY DEVICE OF THE PARALLEL BYPASS TYPE, AND METHOD AND DEVICE FOR CONTROLLING THE FLOW OF A VARIABLE FLUID TYPE PRESSURE SYSTEM USED IN SAID DEVICE
US6210482B1 (en) 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
US6733590B1 (en) * 1999-05-03 2004-05-11 Seagate Technology Llc. Method and apparatus for multilayer deposition utilizing a common beam source
US6119710A (en) * 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
US6343617B1 (en) * 1999-07-09 2002-02-05 Millipore Corporation System and method of operation of a digital mass flow controller
US6389364B1 (en) * 1999-07-10 2002-05-14 Mykrolis Corporation System and method for a digital mass flow controller
US6138708A (en) * 1999-07-28 2000-10-31 Controls Corporation Of America Mass flow controller having automatic pressure compensator
US6799603B1 (en) * 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
JP2001185542A (ja) * 1999-12-27 2001-07-06 Hitachi Ltd プラズマ処理装置及びそれを用いたプラズマ処理方法
US6772781B2 (en) * 2000-02-04 2004-08-10 Air Liquide America, L.P. Apparatus and method for mixing gases
KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
WO2002016885A1 (en) 2000-08-22 2002-02-28 Fugasity Corporation Fluid mass flow meter with substantial measurement range
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
DE10051973A1 (de) * 2000-10-20 2002-05-02 Bosch Gmbh Robert Mikromechanisches Bauelement
US6814096B2 (en) * 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6439253B1 (en) 2000-12-28 2002-08-27 International Business Machines Corporation System for and method of monitoring the flow of semiconductor process gases from a gas delivery system
KR20040024854A (ko) 2001-04-24 2004-03-22 셀레리티 그룹 아이엔씨 질량유량 제어장치를 위한 시스템 및 방법
KR20040019293A (ko) * 2001-05-24 2004-03-05 셀레리티 그룹 아이엔씨 소정 비율의 프로세스 유체를 제공하는 방법 및 장치
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
KR101040446B1 (ko) 2002-04-19 2011-06-09 맷슨 테크놀로지, 인크. 저증기압 가스 전구체를 이용하여 기판 상에 막을증착하기 위한 시스템
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US7004191B2 (en) * 2002-06-24 2006-02-28 Mks Instruments, Inc. Apparatus and method for mass flow controller with embedded web server
US6810308B2 (en) * 2002-06-24 2004-10-26 Mks Instruments, Inc. Apparatus and method for mass flow controller with network access to diagnostics
US7136767B2 (en) * 2002-06-24 2006-11-14 Mks Instruments, Inc. Apparatus and method for calibration of mass flow controller
US7552015B2 (en) * 2002-06-24 2009-06-23 Mks Instruments, Inc. Apparatus and method for displaying mass flow controller pressure
US6712084B2 (en) * 2002-06-24 2004-03-30 Mks Instruments, Inc. Apparatus and method for pressure fluctuation insensitive mass flow control
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
EP1523701A2 (en) * 2002-07-19 2005-04-20 Celerity Group, Inc. Methods and apparatus for pressure compensation in a mass flow controller
EP1552200A4 (en) * 2002-08-28 2010-05-19 Horiba Stec Inc FLOW REGULATOR BASED ON PRESSURE AND WITH IMPROVED PRECISION
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US7169231B2 (en) 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US6898558B2 (en) * 2002-12-31 2005-05-24 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
US20040163590A1 (en) * 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US20050120805A1 (en) * 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
US7072743B2 (en) * 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7408772B2 (en) * 2004-05-14 2008-08-05 Hewlett-Packard Development Company, L.P. Fan tray electronics enclosure
US7412986B2 (en) * 2004-07-09 2008-08-19 Celerity, Inc. Method and system for flow measurement and validation of a mass flow controller
US20060068098A1 (en) * 2004-09-27 2006-03-30 Tokyo Electron Limited Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
US20060124169A1 (en) * 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method
US7174263B2 (en) * 2005-03-25 2007-02-06 Mks Instruments, Inc. External volume insensitive flow verification
US20070021935A1 (en) 2005-07-12 2007-01-25 Larson Dean J Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

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US7846497B2 (en) 2010-12-07
CN101256935B (zh) 2011-08-17
KR20080079210A (ko) 2008-08-29
CN101256935A (zh) 2008-09-03
KR100975441B1 (ko) 2010-08-11
TW200846860A (en) 2008-12-01
SG145668A1 (en) 2008-09-29
US20080202588A1 (en) 2008-08-28
JP2008211219A (ja) 2008-09-11

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