JP5328525B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5328525B2
JP5328525B2 JP2009157696A JP2009157696A JP5328525B2 JP 5328525 B2 JP5328525 B2 JP 5328525B2 JP 2009157696 A JP2009157696 A JP 2009157696A JP 2009157696 A JP2009157696 A JP 2009157696A JP 5328525 B2 JP5328525 B2 JP 5328525B2
Authority
JP
Japan
Prior art keywords
write voltage
circuit
write
test period
load current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009157696A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011014197A (ja
JP2011014197A5 (https=
Inventor
義孝 相馬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009157696A priority Critical patent/JP5328525B2/ja
Priority to US12/801,857 priority patent/US8179734B2/en
Publication of JP2011014197A publication Critical patent/JP2011014197A/ja
Priority to US13/438,742 priority patent/US8693268B2/en
Publication of JP2011014197A5 publication Critical patent/JP2011014197A5/ja
Application granted granted Critical
Publication of JP5328525B2 publication Critical patent/JP5328525B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2009157696A 2009-07-02 2009-07-02 半導体装置 Expired - Fee Related JP5328525B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009157696A JP5328525B2 (ja) 2009-07-02 2009-07-02 半導体装置
US12/801,857 US8179734B2 (en) 2009-07-02 2010-06-29 Semiconductor device
US13/438,742 US8693268B2 (en) 2009-07-02 2012-04-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009157696A JP5328525B2 (ja) 2009-07-02 2009-07-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2011014197A JP2011014197A (ja) 2011-01-20
JP2011014197A5 JP2011014197A5 (https=) 2012-04-05
JP5328525B2 true JP5328525B2 (ja) 2013-10-30

Family

ID=43412573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157696A Expired - Fee Related JP5328525B2 (ja) 2009-07-02 2009-07-02 半導体装置

Country Status (2)

Country Link
US (2) US8179734B2 (https=)
JP (1) JP5328525B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
US8054125B2 (en) * 2009-12-31 2011-11-08 Silicon Laboratories Inc. Charge pump with low power, high voltage protection circuitry
JP6084520B2 (ja) * 2013-06-13 2017-02-22 サイプレス セミコンダクター コーポレーション 半導体メモリおよび半導体メモリの試験方法
US9478297B2 (en) * 2014-01-31 2016-10-25 Taiwan Semiconductor Manufacturing Company Limited Multiple-time programmable memory
US10957364B2 (en) 2018-09-26 2021-03-23 Micron Technology, Inc. Charge pump supply optimization and noise reduction method for logic systems
US11070128B2 (en) 2019-01-23 2021-07-20 Stmicroelectronics International N.V. Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
US11258358B2 (en) 2019-01-23 2022-02-22 Stmicroelectronics International N.V. Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
CN115910138B (zh) * 2021-08-24 2025-09-19 浙江驰拓科技有限公司 一种mram写失效的检测处理方法及检测处理电路、mram

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
JP2809921B2 (ja) * 1992-03-10 1998-10-15 富士通株式会社 不揮発性半導体記憶装置
JP3236105B2 (ja) * 1993-03-17 2001-12-10 富士通株式会社 不揮発性半導体記憶装置及びその動作試験方法
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
US5943263A (en) * 1997-01-08 1999-08-24 Micron Technology, Inc. Apparatus and method for programming voltage protection in a non-volatile memory system
JP3884810B2 (ja) * 1997-01-21 2007-02-21 株式会社ルネサステクノロジ 高電圧発生装置
JP4056611B2 (ja) * 1998-03-17 2008-03-05 富士通株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のメモリデータの再生方法
JP3854025B2 (ja) * 1998-12-25 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
JP3563298B2 (ja) * 1999-06-11 2004-09-08 株式会社 沖マイクロデザイン 電圧検出回路
US6166960A (en) * 1999-09-24 2000-12-26 Microchip Technology, Incorporated Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom
JP2002008392A (ja) * 2000-06-22 2002-01-11 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその評価方法
JP4314056B2 (ja) * 2003-04-17 2009-08-12 パナソニック株式会社 半導体記憶装置
JP2005276345A (ja) * 2004-03-25 2005-10-06 Nec Electronics Corp 不揮発性記憶装置及び不揮発性記憶装置の検証方法
JP4565883B2 (ja) * 2004-04-27 2010-10-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20110002164A1 (en) 2011-01-06
US20120188823A1 (en) 2012-07-26
US8693268B2 (en) 2014-04-08
US8179734B2 (en) 2012-05-15
JP2011014197A (ja) 2011-01-20

Similar Documents

Publication Publication Date Title
JP5328525B2 (ja) 半導体装置
US10234336B2 (en) Ring oscillators for temperature detection in wideband supply noise environments
JP5084118B2 (ja) 半導体装置のクロック発振器
US20040046595A1 (en) Semiconductor memory device having a power-on reset circuit
CN101107674A (zh) 半导体装置以及半导体装置的控制方法
JP4464454B1 (ja) 半導体装置及び半導体装置におけるベリファイ方法
JP2006172202A (ja) 半導体装置
US8358555B2 (en) Fuse circuit and control method thereof
US7042788B2 (en) Power supply circuit and semiconductor storage device with the power supply circuit
JP3563298B2 (ja) 電圧検出回路
US9318161B2 (en) Non-volatile memory robust start-up using analog-to-digital converter
JP2004220711A (ja) 半導体集積回路装置
JP4847695B2 (ja) 不揮発性メモリ素子での電源検出装置及びその検出方法
KR102088835B1 (ko) 어레이 이-퓨즈의 부트-업 방법 및 그를 이용한 반도체 장치
US8823428B2 (en) Semiconductor device, method for operating the same, and memory system including the same
JP2008047247A (ja) 電気ヒューズ回路、メモリ装置及び電子部品
JP3968022B2 (ja) ダイナミックメモリおよびダイナミックメモリをテストするための方法
US9318163B2 (en) Robust memory start-up using clock counter
CN107146637B (zh) 自刷新控制装置以及易失性半导体存储器装置
JP6457734B2 (ja) 半導体装置
US20170019018A1 (en) Power control device and method thereof
JP2009232486A (ja) 電圧発生回路および半導体記憶装置のテスト方法
KR100845798B1 (ko) 전압 생성 회로 및 이를 이용한 반도체 메모리 장치
JP2015097131A (ja) 半導体装置
KR101088468B1 (ko) 전압 생성 회로 및 이를 구비한 불휘발성 메모리 소자

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120220

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130204

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130325

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130708

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130723

R150 Certificate of patent or registration of utility model

Ref document number: 5328525

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees