JP2011014197A5 - - Google Patents

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Publication number
JP2011014197A5
JP2011014197A5 JP2009157696A JP2009157696A JP2011014197A5 JP 2011014197 A5 JP2011014197 A5 JP 2011014197A5 JP 2009157696 A JP2009157696 A JP 2009157696A JP 2009157696 A JP2009157696 A JP 2009157696A JP 2011014197 A5 JP2011014197 A5 JP 2011014197A5
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JP
Japan
Prior art keywords
test period
voltage
write voltage
node
memory cell
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Application number
JP2009157696A
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English (en)
Japanese (ja)
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JP5328525B2 (ja
JP2011014197A (ja
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Application filed filed Critical
Priority to JP2009157696A priority Critical patent/JP5328525B2/ja
Priority claimed from JP2009157696A external-priority patent/JP5328525B2/ja
Priority to US12/801,857 priority patent/US8179734B2/en
Publication of JP2011014197A publication Critical patent/JP2011014197A/ja
Priority to US13/438,742 priority patent/US8693268B2/en
Publication of JP2011014197A5 publication Critical patent/JP2011014197A5/ja
Application granted granted Critical
Publication of JP5328525B2 publication Critical patent/JP5328525B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009157696A 2009-07-02 2009-07-02 半導体装置 Expired - Fee Related JP5328525B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009157696A JP5328525B2 (ja) 2009-07-02 2009-07-02 半導体装置
US12/801,857 US8179734B2 (en) 2009-07-02 2010-06-29 Semiconductor device
US13/438,742 US8693268B2 (en) 2009-07-02 2012-04-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009157696A JP5328525B2 (ja) 2009-07-02 2009-07-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2011014197A JP2011014197A (ja) 2011-01-20
JP2011014197A5 true JP2011014197A5 (https=) 2012-04-05
JP5328525B2 JP5328525B2 (ja) 2013-10-30

Family

ID=43412573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157696A Expired - Fee Related JP5328525B2 (ja) 2009-07-02 2009-07-02 半導体装置

Country Status (2)

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US (2) US8179734B2 (https=)
JP (1) JP5328525B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
US8054125B2 (en) * 2009-12-31 2011-11-08 Silicon Laboratories Inc. Charge pump with low power, high voltage protection circuitry
JP6084520B2 (ja) * 2013-06-13 2017-02-22 サイプレス セミコンダクター コーポレーション 半導体メモリおよび半導体メモリの試験方法
US9478297B2 (en) * 2014-01-31 2016-10-25 Taiwan Semiconductor Manufacturing Company Limited Multiple-time programmable memory
US10957364B2 (en) 2018-09-26 2021-03-23 Micron Technology, Inc. Charge pump supply optimization and noise reduction method for logic systems
US11070128B2 (en) 2019-01-23 2021-07-20 Stmicroelectronics International N.V. Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
US11258358B2 (en) 2019-01-23 2022-02-22 Stmicroelectronics International N.V. Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory
CN115910138B (zh) * 2021-08-24 2025-09-19 浙江驰拓科技有限公司 一种mram写失效的检测处理方法及检测处理电路、mram

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
JP2809921B2 (ja) * 1992-03-10 1998-10-15 富士通株式会社 不揮発性半導体記憶装置
JP3236105B2 (ja) * 1993-03-17 2001-12-10 富士通株式会社 不揮発性半導体記憶装置及びその動作試験方法
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
US5943263A (en) * 1997-01-08 1999-08-24 Micron Technology, Inc. Apparatus and method for programming voltage protection in a non-volatile memory system
JP3884810B2 (ja) * 1997-01-21 2007-02-21 株式会社ルネサステクノロジ 高電圧発生装置
JP4056611B2 (ja) * 1998-03-17 2008-03-05 富士通株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のメモリデータの再生方法
JP3854025B2 (ja) * 1998-12-25 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
JP3563298B2 (ja) * 1999-06-11 2004-09-08 株式会社 沖マイクロデザイン 電圧検出回路
US6166960A (en) * 1999-09-24 2000-12-26 Microchip Technology, Incorporated Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom
JP2002008392A (ja) * 2000-06-22 2002-01-11 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその評価方法
JP4314056B2 (ja) * 2003-04-17 2009-08-12 パナソニック株式会社 半導体記憶装置
JP2005276345A (ja) * 2004-03-25 2005-10-06 Nec Electronics Corp 不揮発性記憶装置及び不揮発性記憶装置の検証方法
JP4565883B2 (ja) * 2004-04-27 2010-10-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7187600B2 (en) * 2004-09-22 2007-03-06 Freescale Semiconductor, Inc. Method and apparatus for protecting an integrated circuit from erroneous operation
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置

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