JP5324837B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP5324837B2
JP5324837B2 JP2008158808A JP2008158808A JP5324837B2 JP 5324837 B2 JP5324837 B2 JP 5324837B2 JP 2008158808 A JP2008158808 A JP 2008158808A JP 2008158808 A JP2008158808 A JP 2008158808A JP 5324837 B2 JP5324837 B2 JP 5324837B2
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Japan
Prior art keywords
film
semiconductor film
substrate
gas
light
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Expired - Fee Related
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JP2008158808A
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Japanese (ja)
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JP2009033120A (ja
JP2009033120A5 (https=
Inventor
舜平 山崎
秀和 宮入
孝征 根井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008158808A priority Critical patent/JP5324837B2/ja
Publication of JP2009033120A publication Critical patent/JP2009033120A/ja
Publication of JP2009033120A5 publication Critical patent/JP2009033120A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2008158808A 2007-06-22 2008-06-18 表示装置の作製方法 Expired - Fee Related JP5324837B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008158808A JP5324837B2 (ja) 2007-06-22 2008-06-18 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007165516 2007-06-22
JP2007165516 2007-06-22
JP2008158808A JP5324837B2 (ja) 2007-06-22 2008-06-18 表示装置の作製方法

Publications (3)

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JP2009033120A JP2009033120A (ja) 2009-02-12
JP2009033120A5 JP2009033120A5 (https=) 2011-07-07
JP5324837B2 true JP5324837B2 (ja) 2013-10-23

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JP2008158808A Expired - Fee Related JP5324837B2 (ja) 2007-06-22 2008-06-18 表示装置の作製方法

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JP (1) JP5324837B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9018109B2 (en) * 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
KR101476817B1 (ko) * 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
TWI559501B (zh) * 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011061978A1 (ja) * 2009-11-19 2011-05-26 シャープ株式会社 半導体装置の製造方法、半導体装置、及び表示装置
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6520320B2 (ja) 2015-04-03 2019-05-29 住友大阪セメント株式会社 光導波路デバイス、及び光導波路デバイスにおいてフォトリフラクティブ効果を解消又は低減する方法
CN112928227B (zh) * 2021-01-28 2022-10-18 厦门天马微电子有限公司 显示面板的封装结构及其制备方法、显示面板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267856A (ja) * 1993-03-16 1994-09-22 Toshiba Corp 化合物薄膜の形成方法
JPH0888174A (ja) * 1994-05-31 1996-04-02 Sanyo Electric Co Ltd 半導体装置，半導体装置の製造方法，薄膜トランジスタ，薄膜トランジスタの製造方法，表示装置
JP3070660B2 (ja) * 1996-06-03 2000-07-31 日本電気株式会社 気体不純物の捕獲方法及び半導体製造装置
JP3349355B2 (ja) * 1996-08-19 2002-11-25 三洋電機株式会社 半導体膜のレーザーアニール方法
JPH1154755A (ja) * 1997-07-29 1999-02-26 Toshiba Corp 半導体素子の製造方法および薄膜トランジスタ
JPH11212021A (ja) * 1998-01-27 1999-08-06 Toshiba Corp レーザ光照射装置
JP3112880B2 (ja) * 1998-02-06 2000-11-27 鹿児島日本電気株式会社 Ｃｖｄ装置のクリーニング方法
JP2000133811A (ja) * 1998-10-28 2000-05-12 Sony Corp 薄膜トランジスタの製造方法
JP3282598B2 (ja) * 1998-12-02 2002-05-13 日本電気株式会社 半導体用基板の製造方法、液晶表示装置及び密着型イメージセンサ装置
JP4782316B2 (ja) * 2001-06-29 2011-09-28 東京エレクトロン株式会社 処理方法及びプラズマ装置
JP4341062B2 (ja) * 2003-02-12 2009-10-07 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP2006100353A (ja) * 2004-09-28 2006-04-13 Nsk Ltd フォトプロッター

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