JP2009033120A5 - - Google Patents
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- Publication number
- JP2009033120A5 JP2009033120A5 JP2008158808A JP2008158808A JP2009033120A5 JP 2009033120 A5 JP2009033120 A5 JP 2009033120A5 JP 2008158808 A JP2008158808 A JP 2008158808A JP 2008158808 A JP2008158808 A JP 2008158808A JP 2009033120 A5 JP2009033120 A5 JP 2009033120A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor film
- manufacturing
- display device
- microcrystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 39
- 239000004065 semiconductor Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 230000001681 protective effect Effects 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 238000009826 distribution Methods 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000007865 diluting Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 229960001730 nitrous oxide Drugs 0.000 claims 1
- 235000013842 nitrous oxide Nutrition 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 229910052990 silicon hydride Inorganic materials 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008158808A JP5324837B2 (ja) | 2007-06-22 | 2008-06-18 | 表示装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007165516 | 2007-06-22 | ||
| JP2007165516 | 2007-06-22 | ||
| JP2008158808A JP5324837B2 (ja) | 2007-06-22 | 2008-06-18 | 表示装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009033120A JP2009033120A (ja) | 2009-02-12 |
| JP2009033120A5 true JP2009033120A5 (https=) | 2011-07-07 |
| JP5324837B2 JP5324837B2 (ja) | 2013-10-23 |
Family
ID=40403252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008158808A Expired - Fee Related JP5324837B2 (ja) | 2007-06-22 | 2008-06-18 | 表示装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5324837B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9018109B2 (en) * | 2009-03-10 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor including silicon nitride layer and manufacturing method thereof |
| KR101476817B1 (ko) * | 2009-07-03 | 2014-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 갖는 표시 장치 및 그 제작 방법 |
| TWI559501B (zh) * | 2009-08-07 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| WO2011061978A1 (ja) * | 2009-11-19 | 2011-05-26 | シャープ株式会社 | 半導体装置の製造方法、半導体装置、及び表示装置 |
| US8629438B2 (en) | 2010-05-21 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6520320B2 (ja) | 2015-04-03 | 2019-05-29 | 住友大阪セメント株式会社 | 光導波路デバイス、及び光導波路デバイスにおいてフォトリフラクティブ効果を解消又は低減する方法 |
| CN112928227B (zh) * | 2021-01-28 | 2022-10-18 | 厦门天马微电子有限公司 | 显示面板的封装结构及其制备方法、显示面板 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06267856A (ja) * | 1993-03-16 | 1994-09-22 | Toshiba Corp | 化合物薄膜の形成方法 |
| JPH0888174A (ja) * | 1994-05-31 | 1996-04-02 | Sanyo Electric Co Ltd | 半導体装置，半導体装置の製造方法，薄膜トランジスタ，薄膜トランジスタの製造方法，表示装置 |
| JP3070660B2 (ja) * | 1996-06-03 | 2000-07-31 | 日本電気株式会社 | 気体不純物の捕獲方法及び半導体製造装置 |
| JP3349355B2 (ja) * | 1996-08-19 | 2002-11-25 | 三洋電機株式会社 | 半導体膜のレーザーアニール方法 |
| JPH1154755A (ja) * | 1997-07-29 | 1999-02-26 | Toshiba Corp | 半導体素子の製造方法および薄膜トランジスタ |
| JPH11212021A (ja) * | 1998-01-27 | 1999-08-06 | Toshiba Corp | レーザ光照射装置 |
| JP3112880B2 (ja) * | 1998-02-06 | 2000-11-27 | 鹿児島日本電気株式会社 | Ｃｖｄ装置のクリーニング方法 |
| JP2000133811A (ja) * | 1998-10-28 | 2000-05-12 | Sony Corp | 薄膜トランジスタの製造方法 |
| JP3282598B2 (ja) * | 1998-12-02 | 2002-05-13 | 日本電気株式会社 | 半導体用基板の製造方法、液晶表示装置及び密着型イメージセンサ装置 |
| JP4782316B2 (ja) * | 2001-06-29 | 2011-09-28 | 東京エレクトロン株式会社 | 処理方法及びプラズマ装置 |
| JP4341062B2 (ja) * | 2003-02-12 | 2009-10-07 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP2006100353A (ja) * | 2004-09-28 | 2006-04-13 | Nsk Ltd | フォトプロッター |
-
2008
- 2008-06-18 JP JP2008158808A patent/JP5324837B2/ja not_active Expired - Fee Related
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