JP5315688B2 - 積層型半導体装置 - Google Patents

積層型半導体装置 Download PDF

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Publication number
JP5315688B2
JP5315688B2 JP2007339005A JP2007339005A JP5315688B2 JP 5315688 B2 JP5315688 B2 JP 5315688B2 JP 2007339005 A JP2007339005 A JP 2007339005A JP 2007339005 A JP2007339005 A JP 2007339005A JP 5315688 B2 JP5315688 B2 JP 5315688B2
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Japan
Prior art keywords
heat
hole
conductive member
semiconductor chip
semiconductor device
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JP2007339005A
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English (en)
Japanese (ja)
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JP2009164152A5 (enrdf_load_stackoverflow
JP2009164152A (ja
Inventor
優介 瀧
功 菅谷
義一 青木
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Nikon Corp
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Nikon Corp
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Priority to JP2007339005A priority Critical patent/JP5315688B2/ja
Publication of JP2009164152A publication Critical patent/JP2009164152A/ja
Publication of JP2009164152A5 publication Critical patent/JP2009164152A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2007339005A 2007-12-28 2007-12-28 積層型半導体装置 Active JP5315688B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007339005A JP5315688B2 (ja) 2007-12-28 2007-12-28 積層型半導体装置

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JP2007339005A JP5315688B2 (ja) 2007-12-28 2007-12-28 積層型半導体装置

Related Child Applications (1)

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JP2013089530A Division JP5626400B2 (ja) 2013-04-22 2013-04-22 積層型半導体装置

Publications (3)

Publication Number Publication Date
JP2009164152A JP2009164152A (ja) 2009-07-23
JP2009164152A5 JP2009164152A5 (enrdf_load_stackoverflow) 2011-05-06
JP5315688B2 true JP5315688B2 (ja) 2013-10-16

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Family Applications (1)

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JP2007339005A Active JP5315688B2 (ja) 2007-12-28 2007-12-28 積層型半導体装置

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JP (1) JP5315688B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10847615B2 (en) 2018-09-20 2020-11-24 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010050259A (ja) * 2008-08-21 2010-03-04 Zycube:Kk ３次元積層半導体装置
JP5439120B2 (ja) * 2009-11-02 2014-03-12 株式会社東芝 半導体装置およびその製造方法
US8232137B2 (en) * 2009-12-10 2012-07-31 Intersil Americas Inc. Heat conduction for chip stacks and 3-D circuits
JP2011243689A (ja) * 2010-05-17 2011-12-01 Panasonic Corp 半導体装置及びその製造方法
KR101715761B1 (ko) * 2010-12-31 2017-03-14 삼성전자주식회사 반도체 패키지 및 그 제조방법
US9704793B2 (en) 2011-01-04 2017-07-11 Napra Co., Ltd. Substrate for electronic device and electronic device
JP5709718B2 (ja) * 2011-01-04 2015-04-30 有限会社 ナプラ 発光デバイス
JP5250707B2 (ja) * 2011-05-26 2013-07-31 有限会社 ナプラ 電子機器用基板及び電子機器
US8367478B2 (en) 2011-06-02 2013-02-05 International Business Machines Corporation Method and system for internal layer-layer thermal enhancement
EP2555239A3 (en) * 2011-08-04 2013-06-05 Sony Mobile Communications AB Thermal package with heat slug for die stacks
US9129929B2 (en) 2012-04-19 2015-09-08 Sony Corporation Thermal package with heat slug for die stacks
JP6201322B2 (ja) * 2013-01-18 2017-09-27 富士通株式会社 電子デバイス及びその製造方法、並びに基板構造及びその製造方法
CN112968005B (zh) * 2021-02-02 2023-02-03 北京大学东莞光电研究院 带连通孔的金刚石复合片及其制造方法
WO2025117597A1 (en) * 2023-12-01 2025-06-05 The Board Of Trustees Of The Leland Stanford Junior University Semiconductors devices, and their manufacture, including thermal-pathway vias

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235446A (ja) * 1984-05-09 1985-11-22 Nec Corp 半導体装置とその製造方法
JPH0529533A (ja) * 1991-07-23 1993-02-05 Fujitsu Ltd 半導体装置
JP3147087B2 (ja) * 1998-06-17 2001-03-19 日本電気株式会社 積層型半導体装置放熱構造
TWI388042B (zh) * 2004-11-04 2013-03-01 Taiwan Semiconductor Mfg 基於奈米管基板之積體電路
JP2006147801A (ja) * 2004-11-18 2006-06-08 Seiko Precision Inc 放熱シート、インターフェース、電子部品及び放熱シートの製造方法
JP4688526B2 (ja) * 2005-03-03 2011-05-25 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
US7928590B2 (en) * 2006-08-15 2011-04-19 Qimonda Ag Integrated circuit package with a heat dissipation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10847615B2 (en) 2018-09-20 2020-11-24 Kabushiki Kaisha Toshiba Semiconductor device

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Publication number Publication date
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