JP5314857B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5314857B2
JP5314857B2 JP2007187768A JP2007187768A JP5314857B2 JP 5314857 B2 JP5314857 B2 JP 5314857B2 JP 2007187768 A JP2007187768 A JP 2007187768A JP 2007187768 A JP2007187768 A JP 2007187768A JP 5314857 B2 JP5314857 B2 JP 5314857B2
Authority
JP
Japan
Prior art keywords
layer
light
substrate
laser beam
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007187768A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008053698A (ja
JP2008053698A5 (enrdf_load_stackoverflow
Inventor
秀和 宮入
博信 小路
明久 下村
栄二 比嘉
智昭 森若
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007187768A priority Critical patent/JP5314857B2/ja
Publication of JP2008053698A publication Critical patent/JP2008053698A/ja
Publication of JP2008053698A5 publication Critical patent/JP2008053698A5/ja
Application granted granted Critical
Publication of JP5314857B2 publication Critical patent/JP5314857B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007187768A 2006-07-28 2007-07-19 半導体装置の作製方法 Expired - Fee Related JP5314857B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007187768A JP5314857B2 (ja) 2006-07-28 2007-07-19 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006206505 2006-07-28
JP2006206505 2006-07-28
JP2007187768A JP5314857B2 (ja) 2006-07-28 2007-07-19 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008053698A JP2008053698A (ja) 2008-03-06
JP2008053698A5 JP2008053698A5 (enrdf_load_stackoverflow) 2010-07-22
JP5314857B2 true JP5314857B2 (ja) 2013-10-16

Family

ID=39237394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007187768A Expired - Fee Related JP5314857B2 (ja) 2006-07-28 2007-07-19 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5314857B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5367415B2 (ja) * 2008-03-06 2013-12-11 株式会社半導体エネルギー研究所 発光装置の作製方法及び成膜用基板
JP5238544B2 (ja) 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5079722B2 (ja) * 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
US8409672B2 (en) 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
US8405909B2 (en) 2008-05-09 2013-03-26 Semiconductor Energy Laboratories Co., Ltd. Deposition donor substrate and deposition method using the same
US8652859B2 (en) * 2011-01-31 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device and manufacturing apparatus of light-emitting device
TWI636896B (zh) 2013-10-30 2018-10-01 荷蘭Ｔｎｏ自然科學組織公司 用以在基材上形成圖案化結構之方法與系統
CN107045237B (zh) 2017-02-04 2022-02-15 合肥京东方光电科技有限公司 阵列基板及其制造方法
KR20210023375A (ko) * 2019-08-23 2021-03-04 삼성전자주식회사 레이저 전사 장치 및 이를 이용한 전사 방법
CN115312634B (zh) * 2022-07-26 2025-07-11 深圳市华星光电半导体显示技术有限公司 微发光二极管的分散转移方法
CN116742299B (zh) * 2023-05-04 2023-12-26 西安电子科技大学 一种铁电薄膜移相器、晶圆级相控阵芯片系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3606891B2 (ja) * 1992-11-06 2005-01-05 富士写真フイルム株式会社 熱転写シート及び画像形成方法
JP3720441B2 (ja) * 1995-12-19 2005-11-30 富士写真フイルム株式会社 熱転写材料
JPH11243209A (ja) * 1998-02-25 1999-09-07 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器
JP2000031013A (ja) * 1998-07-10 2000-01-28 Omron Corp 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板
JP2000031624A (ja) * 1998-07-10 2000-01-28 Omron Corp 導電性パターンを形成するための方法及び装置、並びに、導電性パターン形成用転写板
JP2001156017A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた熱処理方法並びに半導体装置の作製方法
JP4347545B2 (ja) * 2002-06-28 2009-10-21 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP2005285827A (ja) * 2004-03-26 2005-10-13 Advanced Lcd Technologies Development Center Co Ltd 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置

Also Published As

Publication number Publication date
JP2008053698A (ja) 2008-03-06

Similar Documents

Publication Publication Date Title
US7994021B2 (en) Method of manufacturing semiconductor device
JP5314857B2 (ja) 半導体装置の作製方法
KR101471822B1 (ko) 반도체장치의 제조방법
JP5628949B2 (ja) 半導体装置の作製方法
JP4919738B2 (ja) 半導体装置の作製方法
JP5216276B2 (ja) 半導体装置の作製方法
JP5227563B2 (ja) 半導体装置の作製方法
KR20080034809A (ko) 반도체 장치의 제작 방법
JP2008077074A (ja) 表示装置の作製方法
JP4954836B2 (ja) 半導体装置の作製方法
JP5030535B2 (ja) 半導体装置の作製方法
JP5314842B2 (ja) 半導体装置の作製方法
JP5276811B2 (ja) 半導体装置の作製方法
JP5409759B2 (ja) 半導体装置の作製方法
JP2008176095A (ja) パターン形成方法及び薄膜トランジスタの作製方法
JP2008052268A (ja) 表示装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100609

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130604

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130614

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130702

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130708

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5314857

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees