JP5314857B2 - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fabricating method of a semiconductor device which can reduce a manufacturing cost with the less number of processes and can form a semiconductor element using a semiconductor layer of a desired shape without using a resist, and a fabricating method of a semiconductor device which can improve yield and mass productivity by improving efficiency in correcting a defect of a wiring formed on a substrate. <P>SOLUTION: This fabricating method has a step of forming a light absorbing layer 103 on one surface of a substrate 102 having transparency, and a step of irradiating the light absorbing layer 103 with a laser beam via a mask 101 from the other surface side of the substrate having transparency. This irradiation allows the light absorbing layer to absorb the energy of the laser beam. One part of the light absorbing layer is dissociated by emission of a gas in the light absorbing layer based on the energy or sublimation of the light absorbing layer, one part of the light absorbing layer is peeled from the substrate having transparency, and one part of the light absorbing layer is selectively transferred onto an opposite substrate, thereby forming a layer on the substrate. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a method for manufacturing a layer such as a conductive layer, a semiconductor layer, or an insulating layer by a transfer method using a laser beam. Further, the present invention relates to a method for manufacturing a semiconductor device including a semiconductor element formed using the layer.

  2. Description of the Related Art Conventionally, a so-called active matrix driving type display panel or semiconductor integrated circuit constituted by a thin film transistor (hereinafter also referred to as “TFT”) or a semiconductor element typified by a MOS transistor has a light exposure process (hereinafter referred to as a photomask). And a photolithography process), and after forming a resist mask, various thin films are selectively etched.

In the photolithography process, a resist is applied to the entire surface of the substrate and pre-baked, and then the resist is exposed to ultraviolet rays and the like through a photomask, and developed to form a resist mask. Thereafter, using the resist mask as a mask, a thin film (thin film formed of a semiconductor material, an insulator material, or a conductor material) existing in a portion other than a semiconductor layer or a portion to be a wiring is removed by etching, and the semiconductor layer or A wiring is formed (Patent Document 1).
Japanese Patent Laid-Open No. 05-144812

  However, in the conventional process for forming wiring, semiconductor layers, insulating layers, etc. using a photolithography process, most of the resist material is wasted and the number of processes for forming the wiring, semiconductor layers, insulating layers, etc. There are many, and throughput falls.

  In the case where a semiconductor film having a desired shape is formed by etching a semiconductor film using a photolithography process, a resist is applied to the surface of the semiconductor film. At this time, since the surface of the semiconductor film is directly exposed to the resist, there is a problem that the semiconductor film is contaminated by impurities such as oxygen, carbon, and heavy metal elements contained in the resist. Due to this contamination, impurity elements are mixed in the semiconductor film, and the characteristics of the semiconductor element are deteriorated. In particular, TFTs have a problem of causing variation and deterioration in transistor characteristics.

  The present invention has been made in view of such a situation, and provides a method for manufacturing a semiconductor device capable of reducing cost with a small number of steps. In addition, a method for manufacturing a semiconductor device including a semiconductor element having a semiconductor layer having a desired shape without using a resist is provided. Further, the present invention provides a method for manufacturing a semiconductor device, which can increase efficiency in correcting a defect in a wiring formed over a substrate and can improve yield and mass productivity. Further, a method for manufacturing a semiconductor device which can improve throughput and has high productivity is provided.

  In the present invention, a light absorption layer is formed on one surface of a light-transmitting substrate, and the light absorption layer is irradiated with a laser beam from the other surface side of the light-transmitting substrate through a mask. By the irradiation, the energy of the laser beam is absorbed by the light absorption layer. On the opposite substrate, a part of the light absorption layer is dissociated by releasing gas in the light absorption layer by the energy or by sublimation of the light absorption layer, and a part of the light absorption layer is peeled off from the light-transmitting substrate. A portion of the light absorption layer is selectively transferred to the substrate to form a layer on the substrate.

  Note that another layer may be provided so as to be in contact with the light absorption layer, and similarly, the light absorption layer may be irradiated with a laser beam from the light-transmitting substrate side through a mask. In this case, the energy of the laser beam is absorbed by the light absorption layer by the irradiation. A part of the light absorption layer and a part of the layer in contact with the light absorption layer are dissociated by releasing gas in the light absorption layer by the energy or by sublimation of the light absorption layer, so that the light absorption layer is separated from the light-transmitting substrate. A part of the layer and a part of the layer in contact with the light absorption layer are peeled and selectively transferred onto an opposing substrate to form a layer on the substrate.

  Alternatively, another layer is provided so as to be in contact with the light absorption layer. Similarly, the light absorption layer is irradiated with a laser beam from the light-transmitting substrate side through a mask, and part of the layer in contact with the light absorption layer is formed. Dissociate, peel off a part of the layer in contact with the light absorption layer from the light absorption layer, selectively transfer a part of the layer in contact with the light absorption layer onto the opposing substrate, and form a layer on the substrate It is characterized by.

  The light absorption layer is a conductive layer, a semiconductor layer, or an insulating layer that absorbs a laser beam. The layer in contact with the light absorption layer is one or more of a conductive layer, a semiconductor layer, and an insulating layer.

  As the mask, a binary mask, a phase shift mask, or the like is used. Further, a binary mask and a phase shift mask can be used. Further, a mask having a microlens and having a light shielding layer around the microlens can be used.

  The laser beam irradiation can be performed in a vacuum atmosphere by setting the light-transmitting substrate and the substrate in a vacuum atmosphere. Further, the laser beam can be irradiated while heating the substrate. Furthermore, the laser beam can be irradiated while heating the substrate in a vacuum atmosphere.

  In the present invention, when a light absorption layer is formed over a light-transmitting substrate and the light absorption layer is irradiated with a laser beam, the light absorption layer corresponding to the irradiation region of the laser beam can be transferred to the opposite substrate. Is possible. For this reason, it is possible to form a layer having a desired shape at a predetermined location without using a photolithography process using a known resist.

  In the present invention, a first layer that absorbs light is formed over a light-transmitting substrate, a second layer that is in contact with the first layer is formed, and the light absorption layer is irradiated with a laser beam. Then, the second layer corresponding to the laser beam irradiation region can be transferred to the opposing substrate. For this reason, it is possible to form a layer having a desired shape at a predetermined location without using a photolithography process using a known resist.

  In the present invention, a first layer that absorbs light is formed over a light-transmitting substrate, a second layer that is in contact with the first layer is formed, and the light absorption layer is irradiated with a laser beam. Then, the first layer and the second layer that absorb light corresponding to the irradiation region of the laser beam can be transferred to the opposing substrates. For this reason, it is possible to form a layer having a desired shape at a predetermined location without using a photolithography process using a known resist.

  In addition, by irradiating a light absorption layer with a laser beam having a large area such as a linear laser beam, a rectangular laser beam, or a planar laser beam, a plurality of regions can be irradiated with a laser beam in a short time. Therefore, a semiconductor device can be manufactured with high productivity.

  In the case where the light absorption layer is a semiconductor layer, a semiconductor layer having a desired shape can be formed over the substrate while avoiding the incorporation of an impurity element into the semiconductor film by resist coating. A semiconductor element can be formed. Therefore, a highly integrated semiconductor device with little variation in characteristics can be manufactured with high productivity.

  In addition, a layer having a desired shape can be formed without passing through a photolithography process using a resist, and a semiconductor element can be formed using the layer. For this reason, it is possible to reduce raw materials with a small number of steps. As a result, cost reduction is possible.

  Furthermore, a liquid crystal television and an EL television each including the semiconductor device formed by the above manufacturing process can be manufactured at low cost.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and it is easy for those skilled in the art to change the modes and details in various ways without departing from the spirit and scope of the present invention. Understood. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)
In this embodiment mode, a process of selectively forming a layer having an arbitrary shape over a substrate without performing a photolithography process is described below. 1 to 4 are cross-sectional views showing a step of selectively forming a layer having an arbitrary shape on a substrate.

  As shown in FIG. 1A, a light absorption layer 103 is formed on one surface of a light-transmitting substrate 102. A mask 101 is provided on the other surface side of the light-transmitting substrate 102. In addition, the substrate 100 is provided so as to face the light absorption layer 103. Note that one surface and the other surface of the light-transmitting substrate 102 are opposed to each other.

  As the light-transmitting substrate 102, a substrate that transmits a laser beam to be irradiated later can be used. For this reason, a substrate that does not absorb the wavelength of a laser beam to be formed later may be selected as appropriate. Typical examples of the light-transmitting substrate 102 include a quartz substrate, a glass substrate, and a resin substrate.

  The light absorption layer is formed using a material that absorbs a laser beam irradiated later. As a material that absorbs the laser beam, a material having a band gap energy smaller than the energy of the laser beam to be irradiated is used.

  As a light absorption layer, titanium (Ti), aluminum (Al), tantalum (Ta), tungsten (W), molybdenum (Mo), copper (Cu), chromium (Cr), neodymium (Nd), iron (Fe) , Nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silver (Ag), gold (Au), platinum (Pt) An element selected from cadmium (Cd), zinc (Zn), silicon (Si), germanium (Ge), zirconium (Zr), and barium (Ba) can be used. Alternatively, an alloy material containing the element as a main component, a nitrogen compound, an oxygen compound, a carbon compound, or a single layer of a halogen compound can be used. Further, a stack of these can be used. Alternatively, an insulating film in which particles capable of absorbing light are dispersed, typically a silicon oxide film in which microcrystalline silicon is dispersed can be used. Alternatively, an insulating layer in which a dye is dissolved or dispersed in an insulator can be used.

  The light absorption layer absorbs a laser beam to be irradiated later, and comes into contact with a part of the light absorption layer or the light absorption layer by releasing gas in the light absorption layer or sublimating the light absorption layer by the energy of the laser beam. By using a material that can dissociate part of the layer, the transfer of the light absorption layer can be further facilitated.

  As a light absorption layer capable of releasing gas in the light absorption layer by the energy of the laser beam, there is a layer formed of a material containing at least one of hydrogen and a rare gas element. Typically, a semiconductor layer containing hydrogen, a conductive layer containing noble gas or hydrogen, an insulating layer containing noble gas or hydrogen, and the like can be given. In this case, dissociation occurs in part of the light absorption layer as the gas is released in the light absorption layer, so that the light absorption layer can be easily transferred.

  As the light absorption layer that can be sublimated by the energy of the laser beam, a material having a low sublimation point of about 100 to 2000 ° C. is preferable. Alternatively, a material having a melting point of 1500 to 3500 ° C. and a thermal conductivity of 0.1 to 100 W / mK can be used. As a light absorption layer capable of sublimation, representative examples of materials having a low sublimation point of about 100 to 2000 ° C. include aluminum nitride, zinc oxide, zinc sulfide, silicon nitride, mercury sulfide, and aluminum chloride. Examples of materials having a melting point of 1000 to 2000 ° C. and a thermal conductivity of 5 to 100 W / mK include germanium (Ge), silicon oxide, chromium (Cr), and titanium (Ti).

  As a method for forming the light absorption layer 103, a coating method, an electrolytic plating method, a PVD method (Physical Vapor Deposition), or a CVD method (Chemical Vapor Deposition) is used.

  As the mask 101, a mask that can selectively transmit the laser beam 104, a mask that can selectively control the phase difference of the laser beam, and the laser beam 104 can be selectively focused. A suitable mask can be used as appropriate.

  As the substrate 100, a glass substrate, a plastic substrate, a metal substrate, a ceramic substrate, or the like can be used as appropriate.

  Next, the light absorption layer 103 is irradiated with the laser beam 104 from the mask 101 side through the mask 101 and the light-transmitting substrate 102.

  As the laser beam 104, one having energy absorbed by the light absorption layer 103 is appropriately selected. Typically, irradiation is performed by appropriately selecting a laser beam in an ultraviolet region, a visible region, or an infrared region.

Laser oscillators that can oscillate such laser beams include excimer laser oscillators such as ArF, KrF, and XeCl, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, and single crystal oscillators. YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , Nd, Yb, A solid laser oscillator or a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP using one or more of Cr, Ti, Ho, Er, Tm, and Ta as a medium can be used. In the solid-state laser oscillator, it is preferable to appropriately apply the fundamental wave to the fifth harmonic.

As the laser beam 104, a continuous wave laser beam or a pulsed laser beam can be used as appropriate. In a pulsed laser beam, a frequency band of several tens to several hundreds of Hz is usually used, but an oscillation frequency of 10 MHz or higher and a pulse width in the picosecond range or a femtosecond (10 ⁻¹⁵ seconds), which is significantly higher than that. It is also possible to use a pulsed laser having a table frequency.

As the cross-sectional shape of the laser beam 104, a circular shape, an elliptical shape, a rectangular shape, or a linear shape (strictly, an elongated rectangular shape) may be used as appropriate. Further, it is preferable to process with an optical system so as to have such a cross-sectional shape.

  The energy or power of the laser beam 104 is preferably such that gas is emitted from the light absorption layer or sublimation of the light absorption layer is performed.

  In order to transfer the layer to a desired region over the substrate, the substrate, the light-transmitting substrate, and the mask are fixed, and the laser beam may be scanned two-dimensionally. Alternatively, a laser beam irradiation position and a mask may be fixed, and a light-transmitting substrate and the substrate may be moved two-dimensionally to transfer a layer having a desired shape to the substrate.

  Irradiation with the laser beam 104 can be performed under atmospheric pressure or reduced pressure. When performed under reduced pressure, the transfer of the light absorption layer is facilitated. Furthermore, the light absorption layer 103 may be irradiated with a laser beam while the substrate 100 is heated. Also in this case, transfer of the light absorption layer is facilitated.

  As a result, the laser beam 104 is absorbed in the light absorption layer 103, and part of the light absorption layer 103 is dissociated by the energy of the laser beam 104, so that the layer 105a is formed over the substrate 100 as illustrated in FIG. Can be transferred. Further, the remaining portion 105 b of the light absorption layer remains on the light-transmitting substrate 102. Note that after the layer 105a is transferred to the substrate 100, the layer 105a may be irradiated with a laser beam. Alternatively, the layer 105a may be heated after the layer 105a is transferred onto the substrate 100. By such a process, the adhesion between the transferred layer and the substrate can be improved. In addition, the density of the transferred layer can be increased. Furthermore, in the case where the transferred layer 105a is a semiconductor layer, a microcrystalline semiconductor layer in which crystal grains of 0.5 nm to 20 nm can be observed can be formed in the crystalline semiconductor layer or the amorphous semiconductor layer.

  Note that here, in the transfer using the laser beam, the light absorption layer irradiated with the laser beam is not separated at the energy absorption region of the laser beam, but is dissociated only at the interface between the absorption region and the non-absorption region, and the substrate is separated. It includes the case where it is transferred and the case where it is transferred to the substrate after being separated in the energy absorption region of the laser beam. Furthermore, it includes a case where the light absorption layer irradiated with the laser beam absorbs the energy of the laser beam, melts and evaporates, and is transferred to the substrate.

  Through the above steps, a layer can be selectively formed using a part of the light absorption layer on the substrate without using a photolithography step.

  Next, a method for selectively transferring the light absorption layer and the layer in contact with the light absorption layer onto the substrate will be described with reference to FIGS.

  As shown in FIG. 2A, a light absorption layer 111 and a layer 112 in contact with the light absorption layer 111 are formed on one surface of a light-transmitting substrate 102. A mask 101 is provided on the other surface side of the light-transmitting substrate 102. The substrate 100 is provided so as to face the layer 112 in contact with the light absorption layer 111.

  Here, the light absorption layer 111 can be formed using a material similar to that of the light absorption layer 103 illustrated in FIG.

  As the layer 112 in contact with the light absorption layer 111, a conductive layer, a semiconductor layer, or an insulating layer can be formed as appropriate. The layer 112 in contact with the light absorption layer 111 is not limited to a single layer but may be a multilayer in which a plurality of layers are stacked.

  Next, the light absorption layer 111 is irradiated with the laser beam 104 from the mask 101 side through the mask 101 and the light-transmitting substrate 102.

  As a result, the light absorption layer 111 absorbs the laser beam 104 and a part of the light absorption layer 111 is dissociated by the energy of the laser beam 104. At this time, the energy is also transmitted to the layer 112 in contact with the light absorption layer 111, so that the layer 113a can be transferred onto the substrate 100 as illustrated in FIG. Further, over the light-transmitting substrate 102, the light absorption layer 111 and the remaining portion 113b of the layer 112 in contact with the light absorption layer 111 remain.

  In FIG. 2, the light absorption layer 111 and the layer 112 in contact with the light absorption layer are transferred to the substrate 100, but the present invention is not limited thereto.

  As shown in FIG. 3, only a part 115 a of the layer in contact with the light absorption layer may be transferred onto the substrate 100, and the light absorption layer 111 may remain on the light-transmitting substrate 102.

  Note that although FIGS. 1 to 3 illustrate the light-transmitting substrate and the mask separately, the present invention is not limited to this, and the mask may be formed over the light-transmitting substrate. That is, a light absorption layer may be formed on one surface of a light-transmitting substrate and a mask may be formed on the other surface of the light-transmitting substrate. Typical examples of the mask include a light shielding layer, a reflective layer, a microlens, and a phase shift mask.

  Through the above steps, a layer can be formed using a part of a layer that is selectively in contact with the light absorption layer on the substrate without using a photolithography step. As a result, even a layer that does not absorb light can be selectively transferred onto the substrate by being provided so as to be in contact with the light absorbing layer.

  Here, in the transfer method using the laser beam, the positional relationship between the light-transmitting substrate on which the light absorption layer is formed and the substrate facing the light absorption layer will be described with reference to FIGS. FIG. 4 is a cross-sectional view showing the positional relationship between the substrate facing the light absorption layer and the mask. In addition, here, the structure shown in FIG. 1 is used as a representative mode; however, the structure shown in FIG. 2 or 3 can be used as appropriate.

  As shown in FIG. 4A, the surface of the substrate 100 and the light-transmitting substrate 102 on which the light absorption layer is formed are formed using a so-called contact method in which the light absorption layer 103 is interposed therebetween. Can do. At this time, the substrate 100 and the light absorption layer 103 may be in contact with each other. In this case, when the light absorption layer is irradiated with a laser beam, the distance to transfer a part of the light absorption layer is short, so that a part of the light absorption layer can be easily transferred onto the substrate, thereby improving the throughput. Can be made.

  4B, the substrate 100 and the light-transmitting substrate 102 are arranged so as to sandwich a holding member 116 such as a frame, and the substrate 100 and the light-transmitting substrate 102 are interposed between. A so-called proximity system that maintains a constant interval can be used. Also in this case, the surface of the substrate 100 and the light-transmitting substrate 102 on which the light absorption layer 103 is formed are arranged with the light absorption layer 103 therebetween. In this case, since the substrate and the light-transmitting substrate can be installed without damaging the surface of the light absorption layer 103, the yield is improved.

  4C, a spacer 117 may be provided between the light absorption layer 103 and the substrate 100, and the substrate 100 and the light-transmitting substrate 102 may be arranged so as to sandwich the spacer 117. . 2 and 3, the spacer 117 sandwiches the spacer 117 between the layer in contact with the light absorption layer 103 and the substrate 100. As the spacer 117, a spherical spacer or a columnar spacer can be used as appropriate.

  At this time, the height H of the spacer 117 is preferably 2.5 to 20 times the thickness d of the layer 118 transferred onto the substrate by irradiating the light absorption layer 103 with a laser beam. If the height H of the spacer is higher than this range, it becomes difficult to maintain the uniformity of the transferred layer 118.

As shown in FIG. 4C, by providing a plurality of spacers 117 over the substrate 100, the distance between the light-transmitting substrate 102 and the substrate 100 can be kept constant even when a large-area substrate is used. it can.

  In FIG. 4, a substrate 100 and a mask 101 are provided with a light-transmitting substrate 102 interposed therebetween.

  Furthermore, a mirror projection method or a stepper method can be used. In this case, a mask is provided between the light source and the optical system such as a mirror or a lens, and a transparent substrate is provided between the optical system such as the mirror or lens and the substrate so as to face the substrate. That's fine. By using the mirror projection method or the stepper method, the shape and position of the layer can be transferred with high accuracy.

  Next, masks that can be used in FIGS. 1 to 4 are described below. Hereinafter, the structure shown in FIG. 1 is used as a representative form for the mask that can be used in FIGS. 1 to 4, but the structure shown in FIG. 2 or 3 can be used as appropriate.

  As a mask that can be used in FIGS. 1 to 4, a binary mask 121a as shown in FIG. 5A can be used. In the binary mask 121a, a light shielding layer 123 that absorbs light such as chromium or chromium oxide is selectively formed on a light-transmitting substrate 122 such as quartz. Light can be transmitted in a region where the light shielding layer 123 is not formed.

  Further, when the energy of the laser beam applied to the light absorption layer is high, a reflective layer 124 is formed between the light-transmitting substrate 122 and the light-blocking layer 123 as in the binary mask 121b illustrated in FIG. It is preferable to do. By providing the reflective layer 124, the amount of absorption of the laser beam in the light shielding layer can be reduced. For this reason, it is possible to avoid thermal conversion of energy due to light absorption of the laser beam 104 and deformation of the pattern of the light shielding layer due to the heat.

  As the reflective layer 124, a dielectric mirror or a reflective layer can be used. The dielectric mirror is obtained by alternately laminating two types of transparent insulating layers having different refractive indexes. At this time, the greater the refractive index of the two types of transparent insulating layers and the greater the number of layers, the higher the reflection efficiency. For the dielectric mirror, a material to be appropriately laminated is selected depending on the wavelength of the laser beam to be irradiated. For example, the laminated structure of the dielectric mirror that reflects visible light includes a laminated structure of titanium dioxide and silicon dioxide, a laminated structure of zinc sulfide and magnesium fluoride, and a laminated structure of amorphous silicon and silicon nitride.

Alternatively, a layer formed of aluminum, gold, silver, nickel, or the like may be used as the reflective layer. Furthermore, a dielectric mirror and a reflective layer may be stacked.

  A phase shift mask can be used as a mask that can be used in FIGS. By using a phase shift mask, a layer having a fine shape, typically a layer having a small width, or a layer having a small width and length can be formed.

  First, a Levenson type phase shift mask will be described as a phase shift mask. A phase shift mask 131 shown in FIG. 6A has a plurality of fine irregularities regularly formed on the substrate surface. It is possible to modulate the phase of the laser beam intensity by modulating the phase of the laser beam that passes through the phase shift mask and partially causing annihilation interference. Here, unevenness is provided such that the phase difference is 180 ° between adjacent unevennesses. As a result, as shown in FIG. 6B, the phase 132 has a difference of 180 °. When these lights interfere, a laser beam intensity distribution 133 as shown in FIG. 6C is obtained.

  By irradiating the light absorption layer 103 with a laser beam as shown in FIG. 6C as shown in FIG. 6A, the difference between the region in which the laser beam is absorbed and the region in which the laser beam is not absorbed is obtained. It can be secured sufficiently.

  As a result, as shown in FIG. 6D, the layer 134a having a fine width can be transferred to the substrate 100. Note that in FIG. 6D, the remaining portion 134b of the light absorption layer remains on the light-transmitting substrate 102.

  Here, the unevenness of the phase shift mask and the position of the beam spot of the laser beam will be described with reference to FIG. FIG. 7 is a top view of the phase shift mask.

  As shown in FIG. 7A, the beam spot can be arranged and the laser beam can be scanned so that the interface between the convex portion 131a and the concave portion 131b of the phase shift mask is parallel to the width direction of the beam spot. Further, the scanning direction of the laser beam at this time is parallel to the interface between the convex portion 131a and the concave portion 131b. Note that the position of the laser beam and the phase shift mask may be fixed, and the light-transmitting substrate and substrate may be moved in a direction parallel to the interface between the convex portions 131a and the concave portions 131b to transfer the layer to the substrate. .

  Further, as shown in FIG. 7B, the beam spot is arranged and the laser beam is scanned so that the interface between the convex portion 131a and the concave portion 131b of the phase shift mask and the length direction of the beam spot are parallel to each other. Can do. Further, the scanning direction of the laser beam at this time is perpendicular to the interface between the convex portion 131a and the concave portion 131b. Note that the position of the laser beam and the phase shift mask may be fixed, and the light-transmitting substrate and substrate may be moved in a direction perpendicular to the interface between the convex portions 131a and the concave portions 131b to transfer the layer to the substrate. .

  Further, as shown in FIG. 7C, the unevenness of the phase shift mask may be a lattice shape. That is, the convex part 136a may be arranged on a diagonal line, and the concave part 136b may be arrange | positioned so that the space | interval may be filled up. In such a case, the intensity of the laser beam as shown in FIG. 6C is two-dimensionally formed.

  Next, a mode in which a layer is selectively transferred onto a substrate using a phase shift mask and a binary mask will be described with reference to FIG.

  FIG. 8A is a top view of one embodiment of a mask for forming a gate wiring and a gate electrode. A binary mask 121 provided with a light shielding layer 143 having an opening in a region where a gate wiring and a gate electrode are formed, and a phase shift mask 141 are overlaid on the gate electrode formation region. A cross-sectional view taken along line AB of FIG. 8A is shown in FIG.

  As shown in FIG. 8B, a concave portion and a convex portion are formed in the phase shift mask 141 in the region where the gate electrode is formed. In addition, since the region where the gate wiring and the gate electrode are not formed is not irradiated with a laser beam, a light shielding layer 143 is formed on the binary mask 121. As the binary mask 121, the binary masks 121a and 121b shown in FIG. 5 can be used as appropriate. The light-blocking layer 143 can be formed using a material similar to that of the light-blocking layer 123 or the reflective layer 124 illustrated in FIG.

  As shown in FIG. 8C, the laser beam passing through the phase shift mask 141 has a phase difference of 180 ° in the phase 144. When these lights are made to interfere with each other, the intensity 145 of the laser beam is obtained as shown in FIG. That is, by irradiating the light absorption layer 103 with a laser beam as shown in FIG. 8D, a difference between a region where the laser beam is absorbed and a region where the light absorption layer is not absorbed in the region where the gate electrode is formed. Can be secured sufficiently. In the wiring region, a laser beam can be irradiated.

  As a result, a wide gate wiring and a narrow gate electrode 146 can be formed simultaneously. That is, a layer having a predetermined width can be selectively formed in a desired region by irradiating a laser beam with a binary mask and a phase shift mask superimposed.

  Here, the binary mask 121 and the phase shift mask 141 are overlapped to irradiate the light absorption layer with the laser beam. Instead, the light shielding layer 143 may be provided on the phase shift mask 141. Thus, the alignment accuracy of the binary mask 121 and the phase shift mask 141 can be increased, and the yield can be improved.

  Further, as the phase shift mask, a phase shift mask in which the top surface shape of the concave portion or the convex portion is circular can be used.

  FIG. 9A is a top view of a phase shift mask in which the top surface shape of the concave portion or the convex portion is circular. Here, an example is shown in which a concave portion 152 having a circular top surface is formed on the substrate. A light shielding layer 153 is provided in a region where it is not necessary to irradiate the laser beam. 9A and 9C are cross-sectional views taken along the line AB of FIG.

  As shown in FIG. 9B, the light absorption layer 103 is irradiated with the laser beam 104 through the phase shift mask 150 and the light-transmitting substrate 102. A part of the laser beam 104 is shielded by the light shielding layer 153. Further, since the phase of light is shifted by 180 ° at the concave portion 152 and the convex portion, a sufficient difference in light intensity can be ensured. Note that the light-blocking layer 153 can be formed using a material similar to that of the light-blocking layer 123 or the reflective layer 124 illustrated in FIG.

  As a result, as shown in FIG. 9C, the layer 154a having a circular top shape can be transferred to the substrate 100. Note that in FIG. 9C, the remaining portion 154 b of the light absorption layer 103 remains on the light-transmitting substrate 102.

  6 to 9 show the form in which the surface of the light-transmitting substrate is formed with irregularities to form the phase difference of the laser beam. Instead, a light shielding layer and a phase shifter material are used. Thus, a phase shift mask that forms a phase difference of the laser beam can be used.

  Next, a halftone phase shift mask will be described as a phase shift mask.

  As shown in FIG. 10A, the halftone phase shift mask 160 is selectively formed with a translucent phase shifter material 162 instead of a light shielding layer on a translucent substrate 122 such as quartz. Has been. As shown in FIG. 10B, the amplitude distribution 163 of the laser beam at this time is inverted between the light that has passed through the phase shifter material 162 and the light that has passed through the region without the phase shifter material 162.

  As a result, as shown in FIG. 10C, the intensity distribution 164 of the laser beam sharply increases at the interface of the phase shifter material 162.

  By irradiating the light absorption layer 103 with a laser beam having an intensity distribution as shown in FIG. 10C, a sufficient difference between a region where the laser beam is absorbed and a region where the laser beam is not absorbed can be secured sufficiently. it can.

  As a result, as shown in FIG. 10D, the layer 165a having a fine width can be transferred to the substrate 100. Note that in FIG. 10D, the remaining portion 165b of the light absorption layer remains over the light-transmitting substrate 102.

  Further, as a mask that can be used in FIGS. 1 to 4, a mask having a microlens having a curvature around at least the top of a microlens or a microlens array or the like, and preferably a hemispherical microlens like a convex lens or a concave lens. Can be used. If the microlens is convex or concave on the side irradiated with the laser beam, the laser beam can be condensed by the light absorption layer. In FIG. 11, description is made using a mask having a microlens array.

  A microlens array is formed on the surface of the mask 171. A light shielding layer 173 is provided in a region where it is not necessary to irradiate the laser beam. Note that the light-blocking layer 173 can be formed using a material similar to that of the reflective layer 124 illustrated in FIG.

  As shown in FIG. 11A, the light absorption layer 103 is irradiated with a laser beam 104 through a mask 171 and a light-transmitting substrate 102. A part of the laser beam 104 is shielded by the light shielding layer 173. Further, light is collected at each lens of the microlens array. For this reason, the condensed laser beam 104 is selectively irradiated to the light absorption layer 103.

  As a result, the fine layer 174a can be transferred to the substrate 100 as shown in FIG. Note that in FIG. 11C, the remaining portion 174 b of the light absorption layer 103 remains on the light-transmitting substrate 102.

Instead of the microlens array, a microlens may be formed by selectively discharging and baking a transparent composition on a light-transmitting substrate. Such microlenses are polyimide, acrylic, vinyl acetate resin, polyvinyl acetal, polystyrene, AS resin, methacrylic resin, polypropylene, polycarbonate, celluloid, cellulose acetate plastic, polyethylene, methylpentene resin, vinyl chloride resin, polyester resin, It can be formed of urea resin. Further, SiO having Si—CH ₃ bond represented by PSG (phosphorus glass), BPSG (phosphorus boron glass), silicate-based SOG (Spin on Glass), polysilazane-based SOG, alkoxysilicate-based SOG, polymethylsiloxane and the like. ₂ can be formed.

  By a transfer method using a laser beam as described in this embodiment mode, a conductive layer, a semiconductor layer, and an insulating layer can be selectively formed over the substrate. It can also be used in a repair process for repairing wiring defects. In particular, by using a phase shift mask or a mask having a microlens as a mask, it is possible to repair defects in the wiring in a region where the width between the wirings is narrow. As a result, the yield of the semiconductor device can be improved and the mass productivity can be improved.

(Embodiment 2)
In this embodiment, a method for manufacturing a semiconductor element using Embodiment 1 will be described with reference to FIGS.

  Here, an inverted staggered thin film transistor 188 is described as a semiconductor element. Note that not only the inverted staggered thin film transistor but also a semiconductor element such as a forward staggered thin film transistor, a coplanar thin film transistor, a diode, or a MOS transistor can be manufactured.

  As shown in FIG. 12A, a light absorption layer 181 is formed over one surface of a light-transmitting substrate 102. Here, as the light absorption layer 181, a tungsten layer having a thickness of 10 to 1000 nm or more is formed over the light-transmitting substrate 102 by a sputtering method. Further, the substrate 100 is provided so as to face the light absorption layer 181. A mask 101 is provided on the other surface side of the light-transmitting substrate. Note that one surface and the other surface of the light-transmitting substrate 102 are opposed to each other.

  Next, the laser beam 104 is irradiated through the mask 101 and the light-transmitting substrate 102. As a result, the light absorption layer irradiated with the laser beam is transferred onto the substrate 100 as shown in FIG. Here, the transferred light absorption layer is referred to as a layer 182. The layer 182 functions as a gate electrode.

  Note that the layer 182 functioning as a gate electrode may be formed by a droplet discharge method in which droplets of the adjusted composition are discharged from fine holes to form a layer having a predetermined shape. Moreover, you may form using a printing method. Alternatively, the layer 182 may be formed by forming a conductive layer over a substrate by a CVD method, a PVD method, a coating method, or the like, and then selectively etching the conductive layer by a photolithography process.

  Next, as illustrated in FIG. 12C, the gate insulating layer 180 is formed over the substrate 100 and the layer 182. Here, a 50-200 nm silicon nitride layer is formed by plasma CVD.

  Next, the light absorption layer 183, the insulating layer 184, and the semiconductor layer 185 are formed over the light-transmitting substrate 179. Here, a zinc oxide layer having a thickness of 10 to 50 nm is formed as the light absorption layer 183, a silicon oxynitride layer having a thickness of 10 to 50 nm is formed as the insulating layer 184, and an amorphous silicon layer having a thickness of 50 to 150 nm is formed as the semiconductor layer 185. It is formed by a plasma CVD method.

  Next, the gate insulating layer 180 over the substrate 100 and the semiconductor layer 185 over the light-transmitting substrate 179 are disposed so as to face each other. After the mask 101 is disposed over the light-transmitting substrate 179, the mask 101 Then, the light absorption layer 183 is irradiated with the laser beam 104 through the light-transmitting substrate 179.

  Note that at this time, the light absorption layer 183 may be irradiated with the laser beam 104 under reduced pressure. Alternatively, the light absorption layer 183 may be irradiated with the laser beam 104 while the substrate 100 is heated.

  As a result, as shown in FIG. 12D, the semiconductor layer 185a, the insulating layer 184a, and the light absorption layer 183a are transferred onto the gate insulating layer 180 of the substrate 100. After that, the light absorption layer 183a and the insulating layer 184a over the semiconductor layer 185a are removed. Note that here, the insulating layer 184a functions as a blocking layer that prevents the light absorption layer 183a from entering the semiconductor layer 185a. Further, it functions as an etching stopper layer when etching the light absorption layer 183a. Therefore, by providing the insulating layer 184 so as to be in contact with the light absorption layer 183, it is possible to prevent impurities from entering the semiconductor layer when the semiconductor layer 185a is formed by transfer, and the semiconductor layer The uniformity of the film thickness of 185a can be improved.

  Alternatively, the semiconductor layer 185a may be irradiated with a laser beam after the insulating layer 184a and the light absorption layer 183a are removed. Further, the semiconductor layer 185a may be heated. As a result, a crystalline semiconductor layer or a microcrystalline semiconductor layer can be formed.

  Note that the semiconductor layer 185a may be formed by a droplet discharge method in which a droplet of the adjusted composition is discharged from a minute hole to form a layer having a predetermined shape. Moreover, you may form using a printing method. Alternatively, the semiconductor layer 185a may be formed by forming a semiconductor layer over a substrate by a CVD method, a PVD method, a coating method, or the like, and then selectively etching the conductive layer by a photolithography process.

  Next, as illustrated in FIG. 12E, a contact layer 186 is formed over the semiconductor layer 185a. Here, an amorphous silicon layer doped with phosphorus is formed as the contact layer 186 by a formation method similar to that of the layer 182. Alternatively, the contact layer 186 may be formed by a droplet discharge method in which droplets of the adjusted composition are discharged from fine holes to form a layer having a predetermined shape. Moreover, you may form using a printing method. Alternatively, the contact layer 186 may be formed by being selectively etched by a photolithography process after being formed over the substrate by a CVD method, a PVD method, a coating method, or the like.

  Next, as illustrated in FIG. 12F, a wiring 187 is formed over the contact layer 186. The wiring 187 can be formed in the same manner as the layer 182. Alternatively, the wiring 187 may be formed by dropping and baking a conductive paste by a droplet discharge method. Here, an aluminum layer is formed by a method similar to that of the layer 182. Alternatively, the wiring 187 may be formed by a droplet discharge method in which droplets of the adjusted composition are discharged from fine holes to form a layer having a predetermined shape. Moreover, you may form using a printing method. Alternatively, after forming a conductive layer over the substrate by a CVD method, a PVD method, a coating method, or the like, the wiring 187 may be formed by selectively etching the conductive layer through a photolithography process.

  Further, the contact layer 186 and the wiring 187 may be transferred at the same time as the layer 182 without forming the contact layer 186 and the wiring 187 in different steps as shown in FIGS.

  A method of forming a layer having a predetermined shape by discharging droplets of the adjusted composition from fine holes is called a droplet discharge method.

  Through the above steps, a semiconductor element can be manufactured by a transfer method using a laser beam.

(Embodiment 3)
In this embodiment, a method for forming a contact hole, which is highly reliable and is intended to be manufactured at a low cost through a simplified process, will be described with reference to FIGS.

In the case where the conductive layers are electrically connected to each other through the insulating layer, an opening (so-called contact hole) is formed in the insulating layer. In this case, an opening is selectively formed by laser beam irradiation without forming a mask layer over the insulating layer. A first conductive layer is formed, an insulating layer is stacked on the first conductive layer, and a laser is selectively formed from the insulating layer side in a region where an opening is formed in the stack of the first conductive layer and the insulating layer. Irradiate the beam. When the first conductive layer is formed using a conductive material that absorbs a laser beam, the laser beam passes through the insulating layer but is absorbed by the first conductive layer. The first conductive layer is heated and evaporated by the energy of the absorbed laser beam, and destroys the insulating layer stacked thereon. Accordingly, an opening is formed in the first conductive layer and the insulating layer, and a part of the conductive layer under the insulating layer is exposed on the side wall and the bottom surface (or only the side wall) of the opening. By forming the second conductive layer in the opening so as to be in contact with the exposed first conductive layer, the first conductive layer and the second conductive layer can be electrically connected through the insulating layer. In other words, in the present invention, the opening in the insulating layer formed on the conductive layer is formed by irradiating the conductive layer with a laser beam and evaporating the laser irradiation region of the conductive layer by laser ablation. Form.

This will be specifically described with reference to FIG. In this embodiment, as illustrated in FIG. 13A, a conductive layer 721a, a conductive layer 721b that absorbs a laser beam, and an insulating layer 722 are formed over a substrate 720.

The conductive layer 721a and the conductive layer 721b that absorbs the laser beam have a stacked structure, and in this embodiment mode, a low-melting-point metal (in this embodiment mode) that is relatively easily evaporated to the conductive layer 721b that absorbs the laser beam. Chromium) is used, and a metal having a high melting point (tungsten in this embodiment) is used for the conductive layer 721a than the conductive layer 721b that absorbs the laser beam.

As shown in FIG. 13B, the conductive layer 721b that absorbs the laser beam is selectively irradiated with the laser beam 723 from the insulating layer 722 side. In the region irradiated with the laser beam, the irradiation region of the conductive layer 721b is evaporated by the energy of the laser beam. As a result, the insulating layer 722 over the irradiation region of the conductive layer 721b that absorbs the laser beam is removed, so that the opening 725 can be formed. In addition, the conductive layer 721b that absorbs the laser beam is separated into conductive layers 728a and 728b, and the insulating layer 722 is separated into insulating layers 727a and 727b (see FIG. 13C). A conductive layer 726 can be formed in the opening 725 so that the conductive layer 721a, the conductive layers 728a and 728b, and the conductive layer 726 can be electrically connected (see FIG. 13D).

  Furthermore, as illustrated in FIG. 13C, in the case where an oxide layer is formed on the surface of the conductive layer 721a after the opening 725 is formed, the oxide layer is preferably removed. As a method for removing the oxide layer, wet etching, dry etching, or the like can be used as appropriate. Note that in the case where the conductive layer 721a is a tungsten layer, the wet etching using a solution of hydrofluoric acid or the like makes the conductive layer 721a brittle. Therefore, the oxide layer is preferably removed by dry etching.

The beam spot shape of the laser beam 723 can be selected as appropriate, such as a point, a plane, a line, or a rectangle. The opening 725 may be formed by irradiating one point with the laser beam having the above shape. Alternatively, the opening 725 may be selectively formed by scanning the laser beam having the above shape one-dimensionally or two-dimensionally. As the laser beam 723, a laser beam emitted from the laser oscillator described in Embodiment 1 can be used as appropriate.

The conductive layers 721a and 721b can be formed by a vapor deposition method, a sputtering method, a PVD method (Physical Vapor Deposition), a low pressure CVD method (LPCVD method), a CVD method such as a plasma CVD method (Chemical Vapor Deposition), or the like. . In addition, a method in which the composition can be transferred or drawn in a desired pattern, for example, various printing methods (screen (stencil) printing, offset (flat plate) printing, letterpress printing, gravure (intaglio printing), etc.) ), A dispenser method, a selective coating method, and the like can also be used. The conductive layers 721a and 721b can be formed using one or more of chromium, molybdenum, nickel, titanium, cobalt, copper, and aluminum.

FIG. 13 shows an example in which the conductive layer 721b that absorbs the laser beam is evaporated by irradiation with the laser beam 723, the opening 725 is formed in the insulating layer 722, and the stacked conductive layer 721a remains. FIGS. 14A to 14D show another example in which an opening reaching a conductive layer formed under an insulating layer is formed.

In FIG. 14A, an upper conductive layer among conductive layers stacked under an insulating layer is a conductive layer that absorbs a laser beam, and only the upper portion of the conductive layer that absorbs the laser beam is laser-induced by a laser beam. This is an example of ablation. A conductive layer 731, a conductive layer 732 that absorbs a laser beam, and an insulating layer 733 are provided over the substrate 730, and the conductive layer 734 is provided in the opening 750 formed in the conductive layer 732 and the insulating layer 733. A conductive layer 732 that absorbs a laser beam is exposed in the opening 750 and is in contact with and electrically connected to the conductive layer 734.

The conductive layer formed under the insulating layer may be a laminate of a plurality of types of conductive layers having different melting points, or may be a single layer. FIGS. 14B and 14C illustrate an example in which a conductive layer that absorbs a laser beam formed under an insulating layer is a single layer. FIG. 14B shows an example in which only the upper portion of the conductive layer that absorbs the laser beam is laser ablated by the laser beam, and FIG. 14C shows the case where the substrate 740 is exposed in the conductive layer that absorbs the laser beam. It is an example removed by laser ablation.

14B, a conductive layer 736 that absorbs a laser beam and an insulating layer 738 are provided over a substrate 735, and a conductive layer 739 is formed in an opening 751 formed in the conductive layer 736 and the insulating layer 738 that absorbs a laser beam. Is provided. The conductive layer 736 is exposed in the opening 751 and is in contact with and electrically connected to the conductive layer 739. In the case where only the upper portion in the film thickness direction of the conductive layer is partially removed as shown in FIG. 14B, the irradiation condition (energy, irradiation time, etc.) of the laser beam is controlled, or the conductive layer 736 is formed thick. Good.

In FIG. 14C, a conductive layer 741 and an insulating layer 743 that absorb a laser beam are provided over a substrate 740, and a part of the conductive layer 741 that absorbs the laser beam and an opening 752 formed in the insulating layer 743 are conductive. A layer 744 is provided. A conductive layer 741 that absorbs a laser beam is exposed in the opening 752 and is in contact with and electrically connected to the conductive layer 744. As shown in FIG. 14B, the lower conductive layer and the upper conductive layer are not necessarily in contact with each other at the bottom of the opening, and the upper conductive layer is formed so as to be in contact with the lower conductive layer exposed on the side surface of the opening. The structure connected to may be sufficient.

Further, the shape of the opening functioning as the contact hole may not be perpendicular to the bottom surface, and the opening side surface may be tapered as shown in FIG. 14D, a conductive layer 746, a conductive layer 747 that absorbs a laser beam, and an insulating layer 748 are formed over a substrate 745, and an opening 753 is formed in the insulating layer 748 and the conductive layer 747. The opening 753 has a mortar shape, and the side surface of the opening 753 is tapered with respect to the bottom surface.

Thus, the lower conductive layer below the insulating layer and the upper conductive layer on the insulating layer are electrically connected to each other through the opening provided in the insulating layer. In this embodiment, a second conductive layer that absorbs a laser beam is formed over the first conductive layer, and the second conductive layer is evaporated by the laser beam, whereby the first conductive layer and the second conductive layer are evaporated. An opening is formed in the insulating layer formed on the layer. The size and shape of the openings formed in the insulating layer and the conductive layer are controlled by the irradiation conditions (energy intensity, irradiation time, etc.) of the laser beam and the properties of the insulating layer and conductive layer (thermal conductivity, melting point, boiling point, etc.). can do.

  In this embodiment, a method for manufacturing a semiconductor device having a conductive layer connected to a thin film transistor will be described with reference to FIGS. Here, a liquid crystal display panel is formed as the semiconductor device. FIG. 15 is a cross-sectional view of one pixel of the liquid crystal display panel, which will be described below.

  As shown in FIG. 15A, the thin film transistor 188 described in Embodiment 2 and the insulating layer 190 which covers the thin film transistor 188 are formed over the substrate 100. Here, the composition is applied by a coating method and baked to form the insulating layer 190 formed of polyimide.

Next, part of the insulating layer 190 is removed by the method described in Embodiment 3 to provide an opening, so that the insulating layer 191 having the opening is formed. Thereafter, oxide formed on the surface of the wiring 187 may be removed.

  Next, as illustrated in FIG. 15B, a conductive layer 192 connected to the wiring 187 is formed over the opening and the surface of the insulating layer 191. Note that the conductive layer 192 functions as a pixel electrode. Here, the conductive layer 192 is formed using zinc oxide by the method described in Embodiment 1. By forming the light-transmitting conductive layer 192 as the pixel electrode, a transmissive liquid crystal display panel can be manufactured later. Further, by forming a conductive layer having reflectivity, such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), as the conductive layer 192, a reflective liquid crystal display later Panels can be made. Furthermore, a semi-transmissive liquid crystal display panel can be manufactured by forming the light-transmitting conductive layer and the reflective conductive layer for each pixel.

  Note that as shown in FIG. 15B, an opening can be formed so that the wiring 187 and the conductive layer 192 are in contact with each other on the surface of the wiring 187.

  In addition, as illustrated in FIG. 15C, an opening can be formed so that the wiring 187 and the conductive layer 192 are in contact with the surface of the contact layer 186.

Through the above steps, an active matrix substrate can be formed.

  Next, an insulating film is formed by a printing method or a spin coating method, and an alignment film 193 is formed by rubbing. Note that the alignment film 193 can also be formed by oblique deposition.

Next, in the counter substrate 261 provided with the alignment film 264, the second pixel electrode (counter electrode) 263, and the coloring layer 262, a closed loop-shaped sealing material (illustrated) is formed in a region around the pixel portion by a droplet discharge method. Not). A filler may be mixed in the sealing material, and a color filter, a shielding film (black matrix), or the like may be formed on the counter substrate 261.

Next, after the liquid crystal material is dropped inside the closed loop formed of the sealing material by a dispenser type (dropping type), the counter substrate and the active matrix substrate are bonded together in a vacuum, and ultraviolet curing is performed, thereby liquid crystal A liquid crystal layer 265 filled with the material is formed. Note that as a method for forming the liquid crystal layer 265, a dip type (pumping type) in which a liquid crystal material is injected using a capillary phenomenon after the counter substrate is bonded can be used instead of the dispenser type (dropping type).

After that, a wiring board, typically an FPC (Flexible Print Circuit) is attached to the connection terminal portions of the scan line and the signal line through the connection conductive layer. Through the above process, a liquid crystal display panel can be formed.

Although the present embodiment shows a TN liquid crystal display panel, the above-described process can be similarly applied to other types of liquid crystal display panels. For example, the present embodiment can be applied to a horizontal electric field type liquid crystal display panel in which an electric field is applied in parallel with a glass substrate to align liquid crystals. Further, the present embodiment can be applied to a VA (Vertical Alignment) liquid crystal display panel.

16 and 17 show a pixel structure of a VA liquid crystal display panel. FIG. 16 is a plan view, and FIG. 17 shows a cross-sectional structure corresponding to the cutting line I-J shown in the figure. The following description will be given with reference to both the drawings.

In this pixel structure, a single pixel has a plurality of pixel electrodes, and a TFT is connected to each pixel electrode. Each TFT is configured to be driven by a different gate signal. That is, a pixel designed for a multi-domain has a configuration in which a signal applied to each pixel electrode is controlled independently.

The pixel electrode 1624 is connected to the TFT 1628 through a wiring 1618 through an opening (contact hole) 1623. The pixel electrode 1626 is connected to the TFT 1629 through a wiring 1619 through an opening (contact hole) 1627. The gate wiring 1602 of the TFT 1628 and the gate electrode 1603 of the TFT 1629 are separated so that different gate signals can be given. On the other hand, the wiring 1616 functioning as a data line is used in common by the TFT 1628 and the TFT 1629.

The pixel electrode 1624 and the pixel electrode 1626 can be manufactured similarly to the above embodiment mode.

The pixel electrode 1624 and the pixel electrode 1626 have different shapes and are separated by a slit 1625. A pixel electrode 1626 is formed so as to surround the outside of the V-shaped pixel electrode 1624. The timing of the voltage applied to the pixel electrode 1624 and the pixel electrode 1626 is varied depending on the TFT 1628 and the TFT 1629, thereby controlling the alignment of the liquid crystal. A counter substrate 1601 is provided with a light-blocking film 1632, a coloring layer 1636, and a counter electrode layer 1640. In addition, a planarization film 1637 is formed between the coloring layer 1636 and the counter electrode layer 1640 to prevent alignment disorder of the liquid crystal. FIG. 18 shows a structure on the counter substrate side. The counter electrode layer 1640 is a common electrode between different pixels, but a slit 1641 is formed. By arranging the slits 1641 and the slits 1625 on the pixel electrode 1624 side and the pixel electrode 1626 side to alternately engage with each other, an oblique electric field can be effectively generated to control the alignment of the liquid crystal. Thereby, the direction in which the liquid crystal is aligned can be varied depending on the location, and the viewing angle is widened.

This embodiment can be freely combined with the above embodiment modes as appropriate.

Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, it is possible to prevent electrostatic breakdown by manufacturing in the same process as the above TFT and connecting the gate wiring of the pixel portion and the drain or source wiring of the diode.

According to the present invention, a component such as a wiring constituting the liquid crystal display panel can be formed in a desired shape. Further, a complicated photolithography process can be reduced and a liquid crystal display panel can be manufactured through a simplified process, so that material loss is small and cost reduction can be achieved. Therefore, a high-performance and highly reliable liquid crystal display panel can be manufactured with high yield.

  In this embodiment, a method for manufacturing a light-emitting display panel as a semiconductor device will be described. In FIG. 19, one pixel of the light emitting display panel is shown and described below.

  Similarly to Example 1, as illustrated in FIG. 19A, the thin film transistor 188 described in Embodiment 2 and the insulating layer 191 having an opening are formed over the substrate 100.

  Next, as illustrated in FIG. 19B, the first conductive layer 201 connected to the wiring 187 is formed as in the first embodiment. Note that the first conductive layer 201 functions as a pixel electrode.

  Next, as illustrated in FIG. 19C, an insulating layer 202 is formed to cover an end portion of the first conductive layer 201 functioning as a pixel electrode. As such an insulating layer, an insulating layer (not shown) is formed over the insulating layer 191 and the first conductive layer 201, and the insulating layer over the conductive layer 201 is formed on the insulating layer by using the method described in Embodiment 3. It can be formed by selective removal.

  Next, as illustrated in FIG. 19D, a layer 203 containing a light-emitting material is formed over the exposed portion of the first conductive layer 201 and part of the insulating layer 202, and a second layer functioning as a pixel electrode is formed thereover. The conductive layer 204 is formed. Through the above steps, the light-emitting element 205 including the first conductive layer 201, the layer 203 containing a light-emitting material, and the second conductive layer 204 can be formed.

  Here, the structure of the light-emitting element 205 will be described.

  By forming a layer having a light emitting function using an organic compound (hereinafter referred to as a light emitting layer 343) in the layer 203 containing a light emitting material, the light emitting element 205 functions as an organic EL element.

Examples of the light-emitting organic compound include 9,10-di (2-naphthyl) anthracene (abbreviation: DNA) and 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA). ), 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin 545T, perylene, rubrene, periflanthene, 2,5,8,11-tetra (Tert-butyl) perylene (abbreviation: TBP), 9,10-diphenylanthracene (abbreviation: DPA), 5,12-diphenyltetracene, 4- (dicyanomethylene) -2-methyl-6- [p- (dimethylamino) ) Styryl] -4H-pyran (abbreviation: DCM1), 4- (dicyanomethylene) -2-methyl-6- [2- Loridin-9-yl) ethenyl] -4H-pyran (abbreviation: DCM2), 4- (dicyanomethylene) -2,6-bis [p- (dimethylamino) styryl] -4H-pyran (abbreviation: BisDCM) and the like. Can be mentioned. In addition, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ² ′] (picolinato) iridium (abbreviation: FIrpic), bis {2- [3 ′, 5′-bis (trifluoromethyl) ) Phenyl] pyridinato-N, C ² } (picolinato) iridium (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), Tris (2-phenylpyridinato-N, C ² ′) iridium (abbreviation: Ir ( ppy) ₃ ), (acetylacetonato) bis (2-phenylpyridinato-N, C ² ′) iridium (abbreviation: Ir (ppy) ₂ (acac)), (acetylacetonato) bis [2- (2 '-Thienyl) pyridinato-N, C ³ '] iridium (abbreviation: Ir (thp) ₂ (acac)), (acetylacetonato) bis (2-phenylquinolinato-N, C ² ) iridium (Abbreviation: Ir (pq) ₂ (acac)), (acetylacetonato) bis [2- (2′-benzothienyl) pyridinato-N, C ³ ′] iridium (abbreviation: Ir (btp) ₂ (acac)) A compound capable of emitting phosphorescence such as can also be used.

  As shown in FIG. 21A, a hole injection layer 341 formed of a hole injection material, a hole transport layer 342 formed of a hole transport material, and light emission on the first conductive layer 201. A light-emitting layer 343 formed of an organic compound, an electron transport layer 344 formed of an electron-transport material, a layer 203 containing a light-emitting material formed of an electron injection layer 345 formed of an electron-inject material, and The light-emitting element 205 may be formed using two conductive layers 204.

The hole transporting material includes phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine (abbreviation: CuPc), vanadyl phthalocyanine (abbreviation: VOPc), and 4,4 ′, 4 ″ -tris (N, N-diphenyl). Amino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 1,3,5 -Tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'-biphenyl -4,4'-diamine (abbreviation: TPD), 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4'-bis {N- [ 4-di (m-tolyl) amino Phenyl-N-phenylamino} biphenyl (abbreviation: DNTPD), 4,4′-bis [N- (4-biphenylyl) -N-phenylamino] biphenyl (abbreviation: BBPB), 4,4 ′, 4 ″- Examples include tri (N-carbazolyl) triphenylamine (abbreviation: TCTA), but are not limited thereto. Among the above-mentioned compounds, aromatic amine compounds typified by TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, BBPB, TCTA, NPB and the like easily generate holes and are suitable as organic compounds. It is a compound group. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher.

  As the hole injecting material, there is a material obtained by chemically doping a conductive polymer compound in addition to the above hole transporting material. Polyethylenedioxythiophene (abbreviation: PEDOT) doped with polystyrene sulfonic acid (abbreviation: PSS). ) And polyaniline (abbreviation: PAni) can also be used. In addition, an inorganic semiconductor thin film such as molybdenum oxide, vanadium oxide, or nickel oxide, or an ultrathin film of an inorganic insulator such as aluminum oxide is also effective.

Here, the electron transporting materials are tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h]. -Quinolinato) Beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc. Can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) A material such as a metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher.

  As the electron injection material, in addition to the above-described electron transporting materials, alkali metal halides such as lithium fluoride and cesium fluoride, alkaline earth halides such as calcium fluoride, and alkali metal oxides such as lithium oxide. Insulator-like thin films such as objects are often used. In addition, alkali metal complexes such as lithium acetylacetonate (abbreviation: Li (acac) and 8-quinolinolato-lithium (abbreviation: Liq) are also effective. Furthermore, the above-described electron transporting materials, Mg, Li, Cs, and the like are also effective. It is also possible to use a material in which a metal having a small work function is mixed by co-evaporation or the like.

  In addition, as illustrated in FIG. 21B, a hole transport layer 346 formed of the first conductive layer 201, a light-emitting organic compound, and an inorganic compound having an electron-accepting property with respect to the light-emitting organic compound, A light-emitting layer 343 formed of a light-emitting organic compound, a layer 318 including a light-emitting material formed of an electron-transport layer 347 formed of an inorganic compound having an electron-donating property with respect to the light-emitting organic compound, and a first layer The light-emitting element 205 may be formed using two conductive layers 204.

  The hole-transport layer 346 formed using a light-emitting organic compound and an inorganic compound having an electron-accepting property with respect to the light-emitting organic compound appropriately uses the above-described hole-transport organic compound as the organic compound. Form. The inorganic compound may be anything as long as it can easily receive electrons from an organic compound, and various metal oxides or metal nitrides can be used. Any one of Groups 4 to 12 of the periodic table can be used. These transition metal oxides are preferable because they easily exhibit electron accepting properties. Specific examples include titanium oxide, zirconium oxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide, and zinc oxide. Among the metal oxides described above, any of the transition metal oxides in Groups 4 to 8 of the periodic table has a high electron accepting property and is a preferred group. Vanadium oxide, molybdenum oxide, tungsten oxide, and rhenium oxide are particularly preferable because they can be vacuum-deposited and are easy to handle.

  The electron-transport layer 347 formed using a light-emitting organic compound and an inorganic compound having an electron-donating property with respect to the light-emitting organic compound is formed using the above-described electron-transport organic compound as appropriate as the organic compound. Further, the inorganic compound may be anything as long as it easily gives an electron to the organic compound, and various metal oxides or metal nitrides are possible, but alkali metal oxides, alkaline earth metal oxides, Rare earth metal oxides, alkali metal nitrides, alkaline earth metal nitrides, and rare earth metal nitrides are preferred because they easily exhibit electron donating properties. Specific examples include lithium oxide, strontium oxide, barium oxide, erbium oxide, lithium nitride, magnesium nitride, calcium nitride, yttrium nitride, and lanthanum nitride. In particular, lithium oxide, barium oxide, lithium nitride, magnesium nitride, and calcium nitride are preferable because they can be vacuum-deposited and are easy to handle.

  Since the electron transport layer 347 or the hole transport layer 346 formed of a light-emitting organic compound and an inorganic compound has excellent electron injection / transport characteristics, both the first conductive layer 201 and the second conductive layer 204 are Various materials can be used with almost no work function limitation. In addition, the driving voltage can be reduced.

  In addition, the light-emitting element 205 functions as an inorganic EL element because the layer 203 containing a light-emitting material has a layer having a light-emitting function using an inorganic compound (hereinafter referred to as a light-emitting layer 349). Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has a layer containing a light emitting material in which particles of the light emitting material are dispersed in a binder, and the latter has a layer containing a light emitting material made of a thin film of the light emitting material. The common point is that electrons accelerated by an electric field are required. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In many cases, dispersion-type inorganic EL emits donor-acceptor recombination light emission, and thin-film inorganic EL element emits localized light emission. The structure of the inorganic EL element is shown below.

  A light-emitting material that can be used in this embodiment includes a base material and an impurity element that serves as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

  The solid phase method is a method in which a base material and an impurity element or a compound thereof are weighed, mixed in a mortar, heated and fired in an electric furnace, reacted, and the base material contains the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

  The liquid phase method (coprecipitation method) is a method in which a base material or a compound thereof and an impurity element or a compound thereof are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

  As a base material used for a light-emitting material of an inorganic EL element, sulfide, oxide, or nitride can be used. Examples of sulfides that can be used include zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, and barium sulfide. As the oxide, for example, zinc oxide, yttrium oxide, or the like can be used. As the nitride, for example, aluminum nitride, gallium nitride, indium nitride, or the like can be used. Furthermore, zinc selenide, zinc telluride, and the like can also be used, and may be a ternary mixed crystal such as calcium sulfide-gallium sulfide, strontium sulfide-gallium, barium sulfide-gallium.

  As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

  On the other hand, a light-emitting material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used as the emission center of donor-acceptor recombination light emission. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. For example, copper (Cu), silver (Ag), or the like can be used as the second impurity element.

  When a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, the base material, the first impurity element or compound thereof, and the second impurity element or compound thereof are weighed, respectively, After mixing, heating and baking are performed in an electric furnace. As the base material, the above-described base material can be used, and as the first impurity element or a compound thereof, for example, fluorine (F), chlorine (Cl), aluminum sulfide, or the like can be used. As the second impurity element or a compound thereof, for example, copper (Cu), silver (Ag), copper sulfide, silver sulfide, or the like can be used. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

  In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound constituted by the first impurity element and the second impurity element, for example, copper chloride, silver chloride, or the like can be used.

  Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

  FIG. 21C illustrates a cross section of an inorganic EL element in which the layer 203 containing a light-emitting material includes a first insulating layer 348, a light-emitting layer 349, and a second insulating layer 350.

  In the case of a thin-film inorganic EL, the light emitting layer 349 is a layer containing the above light emitting material, and is a physical vapor deposition method (such as a resistance heating vapor deposition method, a vacuum vapor deposition method such as an electron beam vapor deposition (EB vapor deposition) method, or a sputtering method ( PVD), metal organic chemical vapor deposition (CVD), chemical vapor deposition (CVD) such as hydride transport low pressure CVD, atomic layer epitaxy (ALE), or the like.

  The first insulating layer 348 and the second insulating layer 350 are not particularly limited, but preferably have an insulating property and a dense film quality, and more preferably have a high dielectric constant. For example, silicon oxide, yttrium oxide, aluminum oxide, hafnium oxide, tantalum oxide, barium titanate, strontium titanate, lead titanate, silicon nitride, zirconium oxide, etc., or a mixed film or a laminate of two or more of them may be used. it can. The first insulating layer 348 and the second insulating layer 350 can be formed by sputtering, vapor deposition, CVD, or the like. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. Note that the light-emitting element of this embodiment does not necessarily require hot electrons, and thus can be formed into a thin film, and has an advantage that a driving voltage can be reduced. The film thickness is preferably 500 nm or less, more preferably 100 nm or less.

  Note that although not illustrated, a buffer layer may be provided between the light-emitting layer 349 and the insulating layers 348 and 350 or between the light-emitting layer 349 and the first conductive layer 201 and the second conductive layer 204. This buffer layer has a role of facilitating carrier injection and suppressing mixing of both layers. The buffer layer is not particularly limited. For example, zinc sulfide, selenium sulfide, cadmium sulfide, strontium sulfide, barium sulfide, copper sulfide, lithium fluoride, calcium fluoride, fluorine, which are the base materials of the light emitting layer, are used. Barium fluoride, magnesium fluoride, or the like can be used.

  In addition, as illustrated in FIG. 21D, the layer 203 containing a light-emitting material may include a light-emitting layer 349 and a first insulating layer 348. In this case, FIG. 21D illustrates a mode in which the first insulating layer 348 is provided between the second conductive layer 204 and the light-emitting layer 349. Note that the first insulating layer 348 may be provided between the first conductive layer 201 and the light-emitting layer 349.

  Furthermore, the layer 203 containing a light emitting material may be formed of only the light emitting layer 349. That is, the light-emitting element 205 may be formed using the first conductive layer 201, the layer 203 containing a light-emitting material, and the second conductive layer 204.

  In the case of a dispersion-type inorganic EL, a particulate light emitting material is dispersed in a binder to form a layer containing a film light emitting material. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. The binder is a substance for fixing the particulate light emitting material in a dispersed state and holding it in a shape as a layer containing the light emitting material. The light emitting material is uniformly dispersed and fixed in the layer containing the light emitting material by the binder.

  In the case of a dispersion type inorganic EL, a method for forming a layer containing a light emitting material includes a droplet discharge method that can selectively form a layer containing a light emitting material, a printing method (screen printing, offset printing, etc.), a spin coating method, and the like. An application method, a dipping method, a dispenser method, or the like can also be used. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the layer including a light-emitting material and a light-emitting material including a binder, the ratio of the light-emitting material may be 50 wt% or more and 80 wt% or less.

  The element in FIG. 21E includes a first conductive layer 201, a layer 203 containing a light emitting material, and a second conductive layer 204. In the layer 203 containing a light emitting material, a light emitting material 352 is dispersed in a binder 351. A light emitting layer and an insulating layer 348. Note that although the insulating layer 348 is in contact with the second conductive layer 204 in FIG. 21E, the insulating layer 348 may be in contact with the first conductive layer 201. The element may include an insulating layer in contact with each of the first conductive layer 201 and the second conductive layer 204. Further, the element does not need to include an insulating layer in contact with the first conductive layer 201 and the second conductive layer 204.

  As a binder that can be used in this embodiment, an organic material or an inorganic material can be used. Further, a mixed material of an organic material and an inorganic material may be used. As the organic material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aryl group) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. Moreover, a photocuring type etc. can be used. The dielectric constant can be adjusted by appropriately mixing fine particles having a high dielectric constant such as barium titanate or strontium titanate with these resins.

  Inorganic materials used for the binder include silicon oxide, silicon nitride, silicon containing oxygen and nitrogen, aluminum nitride, aluminum containing oxygen and nitrogen, aluminum oxide, titanium oxide, barium titanate, strontium titanate, lead titanate , Potassium niobate, lead niobate, tantalum oxide, barium tantalate, lithium tantalate, yttrium oxide, zirconium oxide, zinc sulfide, and other inorganic materials. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the layer containing the light emitting material and the light emitting material composed of the binder can be controlled more and the dielectric constant can be increased. Can do.

  In the manufacturing process, the light emitting material is dispersed in a solution containing a binder, but as a solvent of the solution containing the binder that can be used in this embodiment, a method of forming a light emitting layer by dissolving the binder material (various wet processes) ) And a solvent capable of producing a solution having a viscosity suitable for a desired film thickness may be appropriately selected. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB). Etc. can be used.

  Inorganic EL light-emitting elements can emit light by applying a voltage between a pair of electrodes that sandwich a layer containing a light-emitting material, but can operate in either direct current drive or alternating current drive.

Here, as a light-emitting element that displays red, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. As a light emitting layer, DNTPD is added to 50 nm, NPB is added to 10 nm, and bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (acetylacetonate) (abbreviation: Ir (Fdpq) ₂ (acac)) is added. In addition, NPB is formed by stacking 30 nm, Alq ₃ by 30 nm, and lithium fluoride by 1 nm. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

As a light-emitting element that displays green, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. The light-emitting layer is formed by stacking DNTPD at 50 nm, NPB at 10 nm, coumarin 545T (C545T) added Alq ₃ at 40 nm, Alq ₃ at 30 nm, and lithium fluoride at 1 nm. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

As a light-emitting element that displays blue, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. 9- [4- (N-carbazolyl)] added with 50 nm of DNTPD, 10 nm of NPB, 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP) as a light emitting layer phenyl-10-phenylanthracene (abbreviation: CzPA) and 30 nm, the Alq ₃ 30 nm, and formed by 1nm laminating lithium fluoride. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

  Next, a protective film is preferably formed over the conductive layer 204.

After that, a wiring board, typically an FPC (Flexible Print Circuit) is attached to the connection terminal portions of the scan line and the signal line through the connection conductive layer. Through the above steps, a light-emitting display panel can be formed.

Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion.

  Here, in the light-emitting display panel having the light-emitting elements shown in FIGS. 21A and 21B, a case where light is emitted to the substrate 100 side, that is, a case where downward emission is performed is described with reference to FIG. explain. In this case, a conductive layer 484 having a light-transmitting property, a layer 485 containing a light-emitting material, and a conductive layer 486 having a light-blocking property or a reflective property are sequentially stacked in contact with the wiring 187 so as to be electrically connected to the thin film transistor 188. The The substrate 100 through which light is transmitted needs to be transparent to at least light in the visible region.

  Next, a case where light is emitted to the side opposite to the substrate 100, that is, a case where upward emission is performed will be described with reference to FIG. The thin film transistor 188 can be formed in a manner similar to that of the thin film transistor described above. A wiring 187 electrically connected to the thin film transistor 188 is in contact with and electrically connected to the light-blocking or reflective conductive layer 463. A conductive layer 463 having a light-blocking property or a reflective property, a layer 464 containing a light-emitting material, and a conductive layer 465 having a light-transmitting property are sequentially stacked. The conductive layer 463 is a metal layer having a light shielding property or a reflection property, and reflects light emitted from the light emitting element to an upper surface of the light emitting element as indicated by an arrow. Note that a light-transmitting conductive layer may be formed over the light-blocking or reflective conductive layer 463. Light emitted from the light-emitting element is emitted through the conductive layer 465.

  Next, the case where light is emitted to both the substrate 100 side and the opposite side, that is, the case where both light emission is performed will be described with reference to FIG. A light-transmitting first conductive layer 472 is electrically connected to a wiring 187 electrically connected to the semiconductor layer of the thin film transistor 188. A first conductive layer 472 having a light-transmitting property, a layer 473 including a light-emitting material, and a second conductive layer 474 having a light-transmitting property are sequentially stacked. At this time, both the first light-transmitting conductive layer 472 and the light-transmitting second conductive layer 474 can transmit light or a material that transmits light at least in the visible region. When formed in thickness, both emissions are realized. In this case, the insulating layer that transmits light and the substrate 100 also need to have a light-transmitting property with respect to at least light in the visible region.

  Here, a pixel circuit of a light-emitting display panel including the light-emitting elements illustrated in FIGS. 21A and 21B and an operation configuration thereof will be described with reference to FIGS. There are two types of operation configurations of the light-emitting display panel, in which a video signal input to a pixel is defined by voltage and a current is defined by current in a display device in which a video signal is digital. There are two types of video signals defined by voltage, one having a constant voltage applied to the light emitting element (CVCV) and one having a constant current applied to the light emitting element (CVCC). In addition, a video signal is defined by current, there are a constant voltage applied to the light emitting element (CCCV) and a constant current applied to the light emitting element (CCCC). In this embodiment, a pixel that performs CVCV operation will be described with reference to FIGS. In addition, a pixel that performs the CVCC operation will be described with reference to FIG.

  In the pixel shown in FIGS. 20A and 20B, a signal line 3710 and a power supply line 3711 are arranged in the column direction, and a scanning line 3714 is arranged in the row direction. In addition, the pixel includes a switching TFT 3701, a driving TFT 3703, a capacitor element 3702, and a light emitting element 3705.

  Note that the switching TFT 3701 and the driving TFT 3703 operate in a linear region when turned on. The driving TFT 3703 has a role of controlling whether or not a voltage is applied to the light emitting element 3705. It is preferable in the manufacturing process that the switching TFT 3701 and the driving TFT 3703 have the same conductivity type. The driving TFT 3703 may be a depletion type TFT as well as an enhancement type.

  In the pixels shown in FIGS. 20A and 20B, the switching TFT 3701 controls input of a video signal to the pixel. When the switching TFT 3701 is turned on, the video signal is input into the pixel. Then, the voltage of the video signal is held in the capacitor 3702.

  In FIG. 20A, when the potential of the power supply line 3711 is Vss and the potential of the counter electrode of the light emitting element 3705 is Vdd, the counter electrode of the light emitting element is an anode, and the electrode of the light emitting element connected to the driving TFT 3703 is The cathode. In this case, luminance unevenness due to characteristic variations of the driving TFT 3703 can be suppressed.

  In FIG. 20A, when the potential of the power supply line 3711 is Vdd and the potential of the counter electrode of the light emitting element 3705 is Vss, the counter electrode of the light emitting element is a cathode and the electrode of the light emitting element connected to the driving TFT 3703 is It is the anode. In this case, luminance unevenness due to characteristic variations of the driving TFT 3703 can be suppressed.

  The pixel shown in FIG. 20B has the same pixel structure as that shown in FIG. 20A except that a TFT 3706 and a scanning line 3715 are added.

  The TFT 3706 is controlled to be turned on or off by a newly arranged scanning line 3715. When the TFT 3706 is turned on, the charge held in the capacitor 3702 is discharged, and the driving TFT 3703 is turned off. That is, the arrangement of the TFT 3706 can forcibly create a state in which no current flows through the light emitting element 3705. Therefore, the TFT 3706 can be called an erasing TFT. Accordingly, the structure in FIG. 20B can improve the light emission duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all the pixels. Is possible.

  In the pixel having the above operation configuration, the current value of the light-emitting element 3705 can be determined by the driving TFT 3703 that operates in a linear region. With the above structure, variation in TFT characteristics can be suppressed, and luminance unevenness of a light-emitting element due to variation in TFT characteristics can be improved, so that a display device with improved image quality can be provided.

  Next, a pixel that performs the CVCC operation is described with reference to FIG. In the pixel illustrated in FIG. 20C, a power supply line 3712 and a current control TFT 3704 are provided in the pixel configuration illustrated in FIG. 20C, the pixel is connected to the gate electrode of the driving TFT 3703. However, instead of the power supply line 3712 arranged in the row direction, the pixel is connected to the power supply line 3712 arranged in the column direction. May be.

  Note that the switching TFT 3701 operates in a linear region, and the driving TFT 3703 operates in a saturation region. The driving TFT 3703 has a role of controlling a current value flowing through the light emitting element 3705, and the current controlling TFT 3704 has a role of operating in a saturation region and controlling supply of current to the light emitting element 3705.

Note that the CVCC operation can also be performed in the pixels shown in FIGS. 20A and 20B. In addition, in the pixel having the operation configuration illustrated in FIG. 20C, Vdd and Vss can be changed as appropriate depending on the direction of current flow of the light-emitting element, as in FIGS. 20A and 20B. .

  In the pixel having the above structure, since the current control TFT 3704 operates in a linear region, a slight change in Vgs of the current control TFT 3704 does not affect the current value of the light emitting element 3705. That is, the current value of the light emitting element 3705 can be determined by the driving TFT 3703 operating in the saturation region. With the above structure, it is possible to provide a display device in which luminance unevenness of a light-emitting element due to variation in TFT characteristics is improved and image quality is improved.

  In particular, in the case of forming a thin film transistor having an amorphous semiconductor or the like, it is preferable to increase the area of the semiconductor film of the driving TFT because the variation of the TFT can be reduced. 20A and 20B can increase an aperture ratio because the number of TFTs is small.

  Note that although a structure in which the capacitor 3702 is provided is shown, the present invention is not limited to this, and the capacitor 3702 is provided when a capacitor for holding a video signal is a gate capacitor or the like. It does not have to be provided.

  In addition, when the semiconductor layer of the thin film transistor is formed using an amorphous semiconductor film, a threshold value is likely to shift. Therefore, a circuit for correcting the threshold value is preferably provided in or around the pixel.

  Such an active matrix light-emitting display device is advantageous in that it can be driven at a low voltage when a pixel density is increased because a TFT is provided in each pixel. On the other hand, a passive matrix light-emitting display device can also be formed. A passive matrix light-emitting display device has a high aperture ratio because a TFT is not provided for each pixel.

  In the display device of the present invention, the screen display driving method is not particularly limited. For example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the display device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

  As described above, various pixel circuits can be employed.

In this embodiment, a typical example of a semiconductor device will be described with reference to FIGS. An electrophoretic element is a microcapsule in which a positive and negative charged black and white particle is confined between a first conductive layer and a second conductive layer. This is an element that performs display by generating a potential difference in the second conductive layer and moving black and white particles between the first conductive layer and the second conductive layer.

  Similarly to Example 1, as illustrated in FIG. 23, the thin film transistor 188 described in Embodiment 2 and the insulating layer 191 having an opening are formed over the substrate 100.

  Next, as in Example 1, a first conductive layer 1181 connected to the wiring 187 is formed. Note that the first conductive layer 1181 functions as a pixel electrode. Here, the first conductive layer 1181 is formed using aluminum by the method described in Embodiment 1.

  In addition, a second conductive layer 1173 is formed over the substrate 1172. Here, the second conductive layer 1173 is formed using zinc oxide by the method described in Embodiment Mode 1.

  Next, the substrate 100 and the substrate 1172 are attached to each other with a sealant. At this time, the microcapsules 1170 are dispersed between the first conductive layer 1181 and the second conductive layer 1173, so that an electrophoretic element is formed between the substrate 100 and the substrate 1172. The electrophoretic element includes a first conductive layer 1181, microcapsules 1170, and a second conductive layer 1173. The microcapsule 1170 is fixed between the first conductive layer 1181 and the second conductive layer 1173 with a binder.

  Next, the structure of the microcapsule will be described with reference to FIG. As shown in FIGS. 24A and 24B, in the microcapsule 1170, a transparent dispersion medium 1176, charged black particles 1175a, and white particles 1175b are enclosed in a fine transparent container 1174. Instead of the black particles 1175a, blue particles, red particles, green particles, yellow particles, blue green particles, and red purple particles may be used. Furthermore, as shown in FIGS. 24C and 24D, a microcapsule 1330 in which a colored dispersion medium 1333 and white particles 1332 are dispersed in a fine transparent container 1331 may be used. Note that the colored dispersion medium 1333 is colored in any one of black, blue, red, green, yellow, blue-green, and magenta. Further, by providing each pixel with a microcapsule in which blue particles are dispersed, a microcapsule in which red particles are dispersed, and a microcapsule in which green particles are dispersed, color display can be performed. Further, by providing each of a microcapsule in which yellow particles are dispersed, a microcapsule in which blue-green particles are dispersed, and a microcapsule in which reddish purple particles are dispersed, color display can be performed. In addition, microcapsules in which white or black particles are dispersed in a blue dispersion medium, microcapsules in which white or black particles are dispersed in a red dispersion medium, and white or black particles in a green dispersion medium. By providing each of the microcapsules in which is dispersed, color display can be performed. In addition, a microcapsule in which white particles or black particles are dispersed in a yellow dispersion medium in one pixel, a microcapsule in which white particles or black particles are dispersed in a blue-green dispersion medium, white particles or black in a magenta dispersion medium By providing each of the microcapsules in which the particles are dispersed, color display can be performed.

  Next, a display method using an electrophoretic element will be described. Specifically, a display method of the microcapsule 1170 having two-color particles is described with reference to FIGS. Here, a microcapsule using white particles and black particles as two-color particles and having a transparent dispersion medium is shown. Note that particles of other colors may be used instead of the black particles of the two colors.

  In the microcapsule 1170, it is assumed that the black particles 1175a are positively charged and the white particles 1175b are negatively charged, and a voltage is applied to the first conductive layer 1171 and the second conductive layer 1173. Here, when an electric field is generated in the direction from the second conductive layer to the first conductive layer, the black particles 1175a migrate to the second conductive layer 1173 side as shown in FIG. The white particles 1175b migrate to the conductive layer 1171 side. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

  On the other hand, when a voltage is applied in the direction from the first conductive layer 1171 to the second conductive layer 1173, the black particles 1175a migrate to the first conductive layer 1171 side as shown in FIG. White particles 1175b migrate to the second conductive layer 1173 side. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as black, and when viewed from the second conductive layer 1173 side, it is observed as white.

  Next, a display method of the microcapsule 1330 including white particles and a colored dispersion medium is described. Here, an example in which the dispersion medium is colored in black is shown, but the same applies even when a dispersion medium colored in another color is used.

  In the microcapsule 1330, it is assumed that the white particles 1332 are negatively charged, and a voltage is applied to the first conductive layer 1171 and the second conductive layer 1173. Here, when an electric field is generated in the direction from the second conductive layer to the first conductive layer, white particles 1332 migrate to the first conductive layer 1171 side as illustrated in FIG. As a result, when the microcapsule is viewed from the first conductive layer 1171 side, it is observed as white, and when viewed from the second conductive layer 1173 side, it is observed as black.

  On the other hand, when a voltage is applied in the direction from the first conductive layer to the second conductive layer, white particles 1332 migrate to the second conductive layer 1173 side as shown in FIG. When the microcapsule is viewed from the first conductive layer 1171 side, it is observed in black, and when viewed from the second conductive layer 1173 side, it is observed as white.

Here, the electrophoretic element has been described, but a display device using a twisting ball display method may be used instead. In the twisting ball display method, spherical particles that are separately painted in white and black are arranged between the first conductive layer and the second conductive layer, and a potential difference is generated between the first conductive layer and the second conductive layer. In this method, display is performed by controlling the orientation of the spherical particles.

  Further, instead of a thin film transistor, a MIM (Metal-Insulator-Metal), a diode, or the like can be used as a switching element.

  A display device having an electrophoretic element or a display device using a twisting ball display system maintains the same state as when a voltage is applied for a long time after the field effect transistor is removed. Thus, the display state can be maintained even when the power is turned off. For this reason, low power consumption is possible.

  Through the above steps, a semiconductor device including an electrophoretic element can be manufactured.

  In the display panels (EL display panel, liquid crystal display panel, electrophoretic display panel) manufactured according to Embodiments 1 to 3, the semiconductor layer is formed of an amorphous semiconductor or SAS (semi-amorphous silicon), and the scanning line side An example in which a drive circuit is formed on a substrate is shown.

FIG. 25 shows a block diagram of a scanning line side driving circuit constituted by an n-channel TFT using SAS capable of obtaining a field effect mobility of 1 to 15 cm ² / V · sec.

  In FIG. 25, a block denoted by reference numeral 8500 corresponds to a pulse output circuit that outputs a sampling pulse for one stage, and the shift register includes n pulse output circuits. Reference numeral 8501 denotes a buffer circuit to which a pixel 8502 is connected.

  FIG. 26 shows a specific structure of the pulse output circuit 8500, and the circuit is composed of n-channel TFTs 8601 to 8613. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 8 μm, the channel width can be set in the range of 10 to 80 μm.

  A specific structure of the buffer circuit 8501 is shown in FIG. Similarly, the buffer circuit includes n-channel TFTs 8620 to 8635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 10 μm, the channel width is set in the range of 10 to 1800 μm.

  In order to realize such a circuit, it is necessary to connect the TFTs by wiring.

As described above, a driver circuit can be incorporated in the display panel.

  Next, mounting of a driver circuit on the display panel described in the above embodiment will be described with reference to FIG.

  As shown in FIG. 28A, a source line driver circuit 1402 and gate line driver circuits 1403 a and 1403 b are mounted around the pixel portion 1401. In FIG. 28A, as a source line driver circuit 1402 and gate line driver circuits 1403a and 1403b, a mounting method using a known anisotropic conductive adhesive or anisotropic conductive film, a COG method, wire bonding The IC chip 1405 is mounted on the substrate 1400 by a method, a reflow process using a solder bump, or the like. Here, the COG method is used. Then, an IC chip and an external circuit are connected via an FPC (flexible printed circuit) 1406.

  Note that a part of the source line driver circuit 1402, for example, an analog switch may be formed over the substrate, and the other part may be separately mounted using an IC chip.

  As shown in FIG. 28B, when a TFT is formed using a SAS or a crystalline semiconductor, the pixel portion 1401, gate line driver circuits 1403a and 1403b, and the like are formed over the substrate, and the source line driver circuit 1402 and the like are formed. It may be mounted as an IC chip separately. In FIG. 28B, an IC chip 1405 is mounted on a substrate 1400 as a source line driver circuit 1402 by a COG method. Then, the IC chip and an external circuit are connected through the FPC 1406.

  Note that a part of the source line driver circuit 1402, for example, an analog switch may be formed over the substrate, and the other part may be separately mounted using an IC chip.

  Further, as illustrated in FIG. 28C, the source line driver circuit 1402 and the like may be mounted by a TAB method instead of the COG method. Then, the IC chip and an external circuit are connected through the FPC 1406. In FIG. 28C, the source line driver circuit is mounted by a TAB method, but a gate line driver circuit may be mounted by a TAB method.

  When the IC chip is mounted by the TAB method, a pixel portion can be provided larger than the substrate, and a narrow frame can be achieved.

  The IC chip is formed using a silicon wafer, but an IC (hereinafter referred to as a driver IC) in which a circuit is formed on a glass substrate may be provided instead of the IC chip. Since the IC chip is taken out from the circular silicon wafer, the shape of the base substrate is limited. On the other hand, the driver IC has a mother substrate made of glass and has no restriction in shape, so that productivity can be improved. Therefore, the shape of the driver IC can be set freely. For example, when the length of the long side of the driver IC is 15 to 80 mm, the required number can be reduced as compared with the case where the IC chip is mounted. As a result, the number of connection terminals can be reduced, and the manufacturing yield can be improved.

  The driver IC can be formed using a thin film transistor having a crystalline semiconductor layer formed over a substrate, and the crystalline semiconductor layer is preferably formed by irradiation with a continuous wave laser beam. A semiconductor layer obtained by irradiation with a continuous wave laser beam has few crystal defects and large crystal grains. As a result, a thin film transistor including such a semiconductor film has favorable mobility and response speed, can be driven at high speed, and is suitable for a driver IC.

  Next, a module having the display panel shown in the above embodiment will be described with reference to FIG. FIG. 29 shows a module in which a display panel 9801 and a circuit board 9802 are combined. On the circuit board 9802, for example, a control circuit 9804, a signal dividing circuit 9805, and the like are formed. In addition, the display panel 9801 and the circuit board 9802 are connected by a connection wiring 9803. As the display panel 9801, a liquid crystal display panel, a light-emitting display panel, an electrophoretic display panel, or the like as described in Embodiments 1 to 3 can be used as appropriate.

  This display panel 9801 includes a pixel portion 9806 in which a light-emitting element is provided in each pixel, a scanning line driver circuit 9807, and a signal line driver circuit 9808 that supplies a video signal to a selected pixel. The configuration of the pixel portion 9806 is the same as in Embodiments 1 to 3. The scan line driver circuit 9807 and the signal line driver circuit 9808 are a mounting method using an anisotropic conductive adhesive or an anisotropic conductive film, a COG method, a wire bonding method, a reflow process using a solder bump, or the like. By the method described above, a scanning line driver circuit 9807 and a signal line driver circuit 9808 formed with IC chips are mounted on a substrate.

  According to this embodiment, a module having a display panel can be formed with high yield.

  As an electronic device including the semiconductor device described in any of the above embodiments and examples, a television device (also simply referred to as a television or a television receiver), a digital camera, a digital video camera, a mobile phone device (simply a mobile phone, a mobile phone) (Also called a telephone), portable information terminals such as PDAs, portable game machines, computer monitors, computers, sound reproduction apparatuses such as car audio, and image reproduction apparatuses equipped with recording media such as home game machines. . A specific example thereof will be described with reference to FIG.

  A portable information terminal illustrated in FIG. 30A includes a main body 9201, a display portion 9202, and the like. By applying what is described in the above embodiments and examples to the display portion 9202, a portable information terminal can be provided at low cost.

  A digital video camera shown in FIG. 30B includes a display portion 9701, a display portion 9702, and the like. By applying the display portion 9701 to any of the above embodiments and examples, a digital video camera can be provided at low cost.

  A portable terminal illustrated in FIG. 30C includes a main body 9101, a display portion 9102, and the like. By applying the display portion 9102 to any of the above embodiments and examples, a portable terminal can be provided at low cost.

  A portable television device illustrated in FIG. 30D includes a main body 9301, a display portion 9302, and the like. By applying the display portion 9302 to the above embodiment mode and examples, a portable television device can be provided at low cost. Such a television device can be widely applied from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). .

  A portable computer shown in FIG. 30E includes a main body 9401, a display portion 9402, and the like. By applying any of the above embodiments and examples to the display portion 9402, a portable computer can be provided at low cost.

  A television device illustrated in FIG. 30F includes a main body 9601, a display portion 9602, and the like. A television device can be provided at low cost by applying the display portion 9602 to the above embodiment mode and examples.

  Here, a configuration of the television device will be described with reference to FIG.

  FIG. 31 is a block diagram illustrating a main configuration of a television device. A tuner 9511 receives a video signal and an audio signal. The video signal includes a video detection circuit 9512, a video signal processing circuit 9513 that converts the signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and converts the video signal into the input specifications of the driver IC. Is processed by a control circuit 9514. The control circuit 9514 outputs signals to the scan line driver circuit 9516 and the signal line driver circuit 9517 of the display panel 9515, respectively. In the case of digital driving, a signal dividing circuit 9518 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

  Of the signals received by the tuner 9511, the audio signal is sent to the audio detection circuit 9521, and the output is supplied to the speaker 9523 through the audio signal processing circuit 9522. The control circuit 9524 receives control information on the receiving station (reception frequency) and volume from the input unit 9525 and sends a signal to the tuner 9511 and the audio signal processing circuit 9522.

  This television device includes the display panel 9515, whereby low power consumption of the television device can be achieved.

  Note that the present invention is not limited to a television receiver, and is applicable to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is sectional drawing explaining the mask applicable to this invention. 6A and 6B are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention and an applicable mask. It is a top view explaining a laser beam irradiation method. 10A and 10B are a cross-sectional view and a top view illustrating a method for manufacturing a semiconductor device of the present invention and an applicable mask. 10A and 10B are a cross-sectional view and a top view illustrating a method for manufacturing a semiconductor device of the present invention and an applicable mask. 6A and 6B are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention and an applicable mask. 6A and 6B are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention and an applicable mask. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are top views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are top views illustrating a method for manufacturing a semiconductor device of the present invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the equivalent circuit of the light emitting element which can be applied to this invention. It is a figure explaining the cross-section of the light emitting element which can be applied to this invention. It is a figure explaining the cross-section of the light emitting element which can be applied to this invention. 8A to 8D are cross-sectional views illustrating a method for manufacturing a semiconductor device of the present invention. It is a figure explaining the cross-sectional structure of the electrophoretic element which can be applied to this invention. FIG. 10 is a diagram illustrating a circuit configuration in a case where a scanning line side driving circuit is formed using TFTs in the display panel of the present invention. FIG. 11 is a diagram (shift register circuit) illustrating a circuit configuration in a case where a scan line side driver circuit is formed using TFTs in a display panel of the present invention. FIG. 11 is a diagram (buffer circuit) illustrating a circuit configuration in a case where a scanning line side driving circuit is formed using TFTs in the display panel of the present invention. It is a top view illustrating a semiconductor device of the present invention. It is a top view illustrating a semiconductor device of the present invention. FIG. 11 is a perspective view illustrating an electronic device using the semiconductor device of the invention. FIG. 11 illustrates an electronic device using a semiconductor device of the present invention.

Claims (4)

Forming a first layer that absorbs light and a second layer having a region in contact with the first layer on one surface of the first substrate having translucency;
Forming a mask on the other surface of the first substrate;
A second substrate is disposed so as to face the second layer through a spacer,
And a step of irradiating a laser beam from the other surface side of the first substrate to transfer a part of the second layer to the second substrate. Forming a first layer that absorbs light and a second layer having a region in contact with the first layer on one surface of the first substrate having translucency;
Forming a mask on the other surface of the first substrate;
A second substrate is disposed so as to face the second layer through a spacer,
Irradiating a laser beam from the other surface side of the first substrate, and transferring a part of the first layer and a part of the second layer to the second substrate. A method for manufacturing a semiconductor device. In claim 1 or claim 2,
The method for manufacturing a semiconductor device, wherein the spacer includes a region in contact with the second layer. In any one of Claim 1 thru | or 3,
The method for manufacturing a semiconductor device, wherein the spacer has a height that is 2.5 to 20 times the thickness of the second layer.

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