JP5367415B2 - Method for manufacturing light emitting device and substrate for film formation - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device in which time (cycle time) required for its manufacture is shortened and productivity is improved. <P>SOLUTION: The method of manufacturing a light-emitting device includes a step in which, on the one surface of a translucent supporting substrate, a first deposition substrate having a light absorbing layer and a first material layer formed on the light absorbing layer by using a wet process and an element substrate having a first electrode are used, and a surface on which the first electrode of the element substrate is formed and a surface on which the first material layer of the first deposition substrate is formed are arranged to face each other, and laser beams of a frequency 10 MHz or more and a pulse width 100 fs or more and 10 ns or less are radiated from a side of the translucent supporting substrate of the first deposition substrate, and the material layer contacting with the light absorbing layer is heated, and at least part of the material layer is deposited on the first electrode of the second substrate. The first deposition substrate is exchanged with the second deposition substrate on which other material layers are formed, and the step are repeated. Accordingly at least on the first electrode, there are formed a plurality of layers. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a method for manufacturing a light-emitting device.

  A light-emitting element using an organic compound having characteristics such as thin and light weight, high-speed response, and direct current low-voltage driving as a light emitter is expected to be applied to a next-generation flat panel display. In particular, a display device in which light emitting elements are arranged in a matrix is considered to be superior to a conventional liquid crystal display device in that it has a wide viewing angle and excellent visibility.

  The light-emitting mechanism of the light-emitting element is such that when a voltage is applied with an EL layer sandwiched between a pair of electrodes, electrons injected from the cathode and holes injected from the anode are recombined at the emission center of the EL layer. It is said that when excitons are formed and the molecular excitons relax to the ground state, they emit energy and emit light. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

  The EL layer included in the light-emitting element has at least a light-emitting layer. In addition, the EL layer can have a stacked structure including a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like in addition to the light-emitting layer.

  Further, EL materials for forming the EL layer are roughly classified into low molecular (monomer) materials and high molecular (polymer) materials. In general, a low molecular weight material is often formed using a vapor deposition method, and a high molecular weight material is often formed using an ink jet method or a spin coat method.

  A vapor deposition apparatus used in the case of the vapor deposition method has a substrate placed on a substrate holder, an EL material, that is, a crucible (or vapor deposition boat) enclosing the vapor deposition material, a heater for heating the EL material in the crucible, and a sublimation EL. And a shutter for preventing diffusion of the material. Then, the EL material heated by the heater is sublimated and deposited on the substrate. At this time, in order to uniformly form a film, the deposition target substrate is rotated, and even the substrate having a size of 300 mm × 360 mm needs to have a distance of about 1 m between the substrate and the crucible. Therefore, when the substrate to be processed is enlarged, the vapor deposition apparatus needs to be further enlarged, so that there is a practical limit to the size of the substrate that can be formed using the vapor deposition method. Conceivable.

  In addition, when considering a full color display device using red, green, and blue light emitting elements by vapor deposition, a shadow mask is installed between the substrate and the evaporation source in contact with the substrate. Different colors are realized through the mask.

  However, a shadow mask used for manufacturing a full-color display device is extremely thin because an opening needs to be precisely manufactured. Therefore, when the shadow mask is enlarged in accordance with the increase in the size of the substrate, problems such as deflection of the shadow mask and change in the size of the opening have occurred. In addition, since it is difficult to introduce a means for reinforcing the strength of the shadow mask in a region corresponding to the pixel portion of the shadow mask, it is difficult to apply the reinforcing means when manufacturing a large display area.

  In addition, there is a growing demand for finer display pixel pitches with higher definition of display devices (increasing the number of pixels), and the shadow mask tends to be thinner.

  On the other hand, a method of directly depositing an EL layer on a deposition target substrate by a wet method such as an ink-jet method or a spin coat method can be applied even when the substrate is enlarged, but a uniform film is formed. Is difficult. Further, in the case of using a wet method, it is necessary to apply a composition or solution containing an EL material and then calcinate to remove the solvent. Therefore, in the case where a layer containing an EL material is stacked, it is necessary to repeat the step of applying and the step of baking, which is very time consuming. In addition, in the case of stacking using a wet method such as an ink jet method, a film must be formed using a solvent in which an already formed layer does not dissolve, and options for materials to be used and options for a layered structure are limited. . If the choice of the material to be used and the choice of the laminated structure are limited, the performance (emission efficiency, lifetime, etc.) of the light emitting element is greatly limited. Therefore, even a light-emitting element having an excellent structure cannot be applied to a light-emitting device, which is a major obstacle to improving the performance of the light-emitting device.

  Therefore, an object of the present invention is to shorten the time required for manufacturing (tact time) and improve productivity in manufacturing a light-emitting device.

  One embodiment of the present invention includes a first film-formation substrate including a light-absorbing layer and a first material layer formed on the light-absorbing layer by a wet method on one surface of the light-transmitting support substrate. The element substrate having the first electrode is used, and the surface of the element substrate on which the first electrode is formed and the surface of the first film formation substrate on which the first material layer is formed are opposed to each other. The material layer is disposed and irradiated with a laser beam having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less from the translucent support substrate side of the first film formation substrate, and the material layer in contact with the light absorption layer is heated. A step of forming a film on at least a part of the first electrode of the second substrate, and replacing the first film-forming substrate with a second film-forming substrate on which another material layer is formed. A method for manufacturing a light-emitting device is characterized in that a plurality of layers are formed on at least the first electrode by repeating the steps.

  In the above structure, at least one of the steps is characterized by using a deposition substrate in which a reflective layer having an opening is formed between a light-transmitting support substrate and a light absorption layer. By providing the reflective layer, a film having a desired pattern can be formed.

  In the above structure, the deposition substrate may include a heat insulating layer between the reflective layer and the light absorption layer. By providing the heat insulating layer, it is possible to suppress blurring of the film formation pattern. The heat transmittance of the heat insulating layer with respect to laser light is preferably 60% or more, and the heat conductivity of the material used for the heat insulating layer is preferably smaller than the heat conductivity of the material used for the reflective layer and the light absorbing layer. Examples of the material constituting the heat insulating layer include titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, and silicon carbide. Moreover, it is preferable that the film thickness of a heat insulation layer is 10 nm or more and 2 micrometers or less.

  In the above structure, the reflective layer preferably has a reflectance of 85% or more with respect to laser light. Examples of the material constituting the reflective layer include aluminum, silver, gold, platinum, copper, an alloy containing aluminum, an alloy containing silver, or indium oxide-tin oxide.

  In the above structure, the light absorption layer preferably has a reflectance with respect to light of 70% or less. Moreover, it is preferable that the film thickness of a light absorption layer is 10 nm or more and 600 nm or less. Examples of the material constituting the light absorption layer include metal nitride, metal, and carbon.

  In the above structure, the material layer is preferably a layer made of an organic compound.

  In the above configuration, the laser beam is preferably formed in a linear shape.

  Note that a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). In addition, a module in which a connector such as an FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the light emitting device, or a printed wiring board provided on the end of the TAB tape or TCP In addition, a module in which an IC (integrated circuit) is directly mounted on a light emitting element by a COG (Chip On Glass) method is also included in the light emitting device.

  By applying the present invention, the time (takt time) required for manufacturing the light emitting device can be shortened and productivity can be improved.

4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a deposition substrate and a deposition method according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. 4A and 4B illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. FIG. 6 illustrates a film formation apparatus. 3A and 3B illustrate a light-emitting element. FIG. 9 illustrates a passive matrix light-emitting device. FIG. 9 illustrates a passive matrix light-emitting device. FIG. 10 illustrates an active matrix light-emitting device. FIG. 9 illustrates an electronic device. FIG. 9 illustrates an electronic device.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes can be made in form and details without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals may be used in common in different drawings.

(Embodiment 1)
In this embodiment, a method for manufacturing a light-emitting device of one embodiment of the present invention will be described. The method for manufacturing the light-emitting device described in this embodiment uses a deposition substrate. Note that in this specification, a substrate which is provided with a material to be formed and is used for forming a film on a deposition target substrate is referred to as a deposition substrate.

  FIG. 1A illustrates an example of a deposition substrate. In the deposition substrate illustrated in FIG. 1A, a light absorption layer 104 is formed over a first substrate 101 which is a supporting substrate. A material layer 105 containing a material to be deposited on the deposition target substrate is formed over the light absorption layer 104. In FIG. 1A, the material layer 105 is formed over the entire surface of the first substrate 101. Note that the light absorption layer 104 may be patterned so as to correspond to a region desired to be formed over the deposition target substrate.

  In the present invention, when the material of the material layer 105 is formed, the light applied to the first substrate 101 needs to pass through the first substrate 101. Therefore, the first substrate 101 transmits light. A substrate having a high rate is preferable. That is, in the case where laser light is used as irradiation light, the first substrate 101 is preferably a substrate that transmits laser light. Moreover, it is preferable that it is a material with low heat conductivity. This is because the heat obtained from the irradiated light can be efficiently used for film formation because the thermal conductivity is low. As the first substrate 101, for example, a glass substrate, a quartz substrate, or the like can be used. A glass substrate or a quartz substrate is less likely to adsorb or adhere impurities (such as moisture) than a film substrate or the like. Thus, impurities can be prevented from being mixed during film formation.

  The light absorption layer 104 is a layer that absorbs light irradiated during film formation. Therefore, the light absorption layer 104 is preferably formed of a material having a low reflectance with respect to the light to be irradiated and a high absorption rate. Specifically, the light absorption layer 104 preferably exhibits a reflectance of 70% or less with respect to the irradiated light.

  Various materials can be used for the light absorption layer 104. For example, a metal nitride such as titanium nitride, tantalum nitride, molybdenum nitride, or tungsten nitride, a metal such as titanium, molybdenum, or tungsten, or carbon can be used. Note that since the type of material suitable for the light absorption layer 104 varies depending on the wavelength of light to be irradiated, it is necessary to select a material as appropriate. Further, the light absorption layer 104 is not limited to a single layer, and may be composed of a plurality of layers. For example, a stacked structure of metal and metal nitride may be used.

  Note that the light absorption layer 104 can be formed by various methods. For example, it can be formed by sputtering, electron beam vapor deposition, vacuum vapor deposition, or the like.

  Further, although the thickness of the light absorption layer 104 varies depending on the material, the irradiation light can be converted into heat without wasting by setting the film thickness so that the irradiation light is not transmitted. Therefore, the film thickness is preferably 10 nm or more and 2 μm or less. In addition, when the light absorption layer is thinner, the entire light absorption layer can be heated with light of smaller energy. Therefore, the thickness of the light absorption layer 104 is more preferably 10 nm or more and 600 nm or less. For example, when light with a wavelength of 532 nm is irradiated, by setting the thickness of the light absorption layer 104 to be 50 nm or more and 200 nm or less, the irradiated light can be efficiently absorbed and generated.

  Note that the light absorption layer 104 can be heated to a temperature at which a material included in the material layer 105 can be deposited (a temperature at which at least a part of the material included in the material layer is deposited on the deposition target substrate). Part of the irradiated light may be transmitted. However, in the case where part of the light is transmitted, it is necessary to use a material that is not decomposed by irradiation light as the material included in the material layer 105.

  The material layer 105 is a layer including a material to be deposited on the deposition target substrate. Then, by irradiating the deposition substrate with light, the material included in the material layer 105 is heated, and at least a part of the material included in the material layer 105 is deposited on the deposition substrate. When the material layer 105 is heated, at least a part of the material included in the material layer is vaporized and adheres to the deposition target substrate, or at least a part of the material layer is thermally deformed, resulting in a change in stress. In order to achieve this, the film is peeled off and formed on the film formation substrate.

  The material layer 105 is formed by a wet method. For example, a spin coating method, a spray coating method, an ink jet method, a dip coating method, a casting method, a die coating method, a roll coating method, a blade coating method, a bar coating method, a gravure coating method, or a printing method can be used. By using a wet method, a large film formation substrate can be easily formed. Further, by selecting a film formation method even in a wet method, the utilization efficiency of materials can be increased, and the manufacturing cost can be reduced.

  In the case where the material layer 105 is formed by a wet method, a desired material may be dissolved or dispersed in a solvent to prepare a solution or a dispersion. The solvent is not particularly limited as long as it can dissolve or disperse the material and does not react with the material. For example, halogen solvents such as chloroform, tetrachloromethane, dichloromethane, 1,2-dichloroethane, or chlorobenzene, ketone solvents such as acetone, methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone, or cyclohexanone, benzene, toluene, or Aromatic solvents such as xylene, ethyl acetate, n-propyl acetate, n-butyl acetate, ethyl propionate, γ-butyrolactone, ester solvents such as diethyl carbonate, ether solvents such as tetrahydrofuran or dioxane, dimethylformamide Alternatively, an amide solvent such as dimethylacetamide, dimethyl sulfoxide, hexane, water, or the like can be used. Moreover, you may mix and use these solvent multiple types. By using the wet method, the utilization efficiency of the material can be increased, and the manufacturing cost can be reduced.

  Note that in the case where the thickness and uniformity of a film formed over the deposition target substrate are controlled by the material layer 105, the thickness and uniformity of the material layer 105 need to be controlled. However, the material layer 105 is not necessarily a uniform layer as long as the thickness and uniformity of a film formed over the deposition target substrate are not affected. For example, it may be formed in a fine island shape, or may be formed in a layered structure.

  As a material included in the material layer 105, any material can be used regardless of whether it is an organic compound or an inorganic compound as long as it can be formed into a film. In the case where an EL layer of a light-emitting element is formed as shown in this embodiment mode, a filmable material for forming the EL layer is used. For example, in addition to organic compounds such as luminescent materials and carrier transport materials that form EL layers, metal oxides and metals used for electrodes of light-emitting elements in addition to carrier transport layers and carrier injection layers that constitute EL layers Inorganic compounds such as nitrides, metal halides, and simple metals can also be used. Note that in this specification, an EL layer refers to a layer provided between a pair of electrodes in a light-emitting element.

  Further, the material layer 105 may include a plurality of materials. The material layer 105 may be a single layer or a plurality of layers may be stacked. Therefore, it is possible to perform co-evaporation by stacking layers containing different materials. Note that in the case where the material layer 105 has a stacked structure, the material layer 105 is preferably stacked so as to include a low-temperature material that can be formed on the first substrate side. With such a structure, it is possible to efficiently perform vapor deposition using the material layer 105 having a stacked structure.

  Next, as illustrated in FIG. 1B, a deposition target substrate is provided on one surface of the first substrate 101, at a position facing the surface on which the light absorption layer 104 and the material layer 105 are formed. A certain second substrate 107 is disposed. The second substrate 107 is a deposition target substrate on which a desired layer is deposited by a deposition process. Note that here, in order to describe the case where an EL layer of a light-emitting element is formed using a deposition substrate, a first electrode 108 serving as one electrode of the light-emitting element is formed over the second substrate 107, and An insulator 109 is formed. Then, the distance d between the first substrate 101 and the second substrate 107 is a close distance, specifically, the distance d between the surface of the material layer 105 on the first substrate 101 and the surface of the second substrate 107 is 0 mm or more. It is made to face 2 mm or less, preferably 0 mm to 0.05 mm, more preferably 0 mm to 0.03 mm.

  Note that the distance d is defined by the distance between the surface of the material layer 105 on the first substrate 101 and the surface of the second substrate 107. Therefore, when any layer (for example, a conductive layer functioning as an electrode or an insulator functioning as a partition wall) is formed over the second substrate 107, the distance d is equal to the material layer 105 on the first substrate 101. , And the distance between the surface of the layer formed on the second substrate 107 and the outermost surface of the layer. However, the distance d in the case where the surface of the material layer 105 on the first substrate 101 or the outermost surface of the layer formed on the second substrate 107 has unevenness is the distance d of the material layer 105 on the first substrate 101. , And the shortest distance between the top surface of the layer formed on the second substrate 107.

  Next, as shown in FIG. 1C, light 110 is irradiated from the back surface (the surface on which the light absorption layer 104 and the material layer 105 are not formed) of the first substrate 101. The light absorption layer formed over the first substrate 101 absorbs irradiated light and converts it into heat. Then, by applying the heat to the material layer 105 provided in contact with the light absorption layer, at least a part of the material included in the material layer 105 is formed on the first electrode 108 formed over the second substrate 107. The film is formed. Thus, the EL layer 111 of the light-emitting element can be formed over the second substrate 107.

  As light to be irradiated, laser light having a frequency of 10 MHz or more and a pulse width of 100 fs to 10 ns is used. By using laser light having a very large frequency and a very small pulse width in this manner, heat conversion in the light absorption layer 104 is efficiently performed, and the material can be efficiently heated.

  Further, the wavelength of the laser beam is not particularly limited, and laser beams having various wavelengths can be used. For example, laser light having a wavelength such as 355, 515, 532, 1030, or 1064 nm can be used.

The laser light includes Ar laser, Kr laser, excimer laser and other gas laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic). YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants are used as the medium. Lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, fiber lasers and other solid lasers that are oscillated from one or more types can be used. Also, second harmonics, third harmonics, and higher harmonics oscillated from the solid-state laser can be used. Note that the use of a solid-state laser whose laser medium is solid has the advantage that a maintenance-free state can be maintained for a long time and the output is relatively stable.

  The shape of the laser spot is preferably linear or rectangular. By making the shape linear or rectangular, the processing substrate can be efficiently scanned with laser light. Therefore, the time required for film formation (takt time) is shortened and productivity is improved.

  In addition, the present invention is characterized in that the light absorption layer 104 that absorbs light from the light source gives heat to the material layer 105 instead of using radiant heat by light from the irradiated light source. Therefore, since the temperature of the deposition target substrate does not increase, a substrate with low heat resistance can be used as the deposition target substrate.

In addition, film formation by light irradiation is preferably performed in a reduced pressure atmosphere. Therefore, it is preferable that the film formation chamber has an atmosphere of 5 × 10 ⁻³ Pa or less, preferably 10 ⁻⁴ Pa to 10 ⁻⁶ Pa.

  Since laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less used in the present invention can have high output, a large area can be processed at one time, and the time required for film formation can be shortened. Therefore, productivity can be improved.

  FIG. 2A shows the case where the distance d between the first substrate 101 and the second substrate 107 is 0 mm. That is, the case where the material layer 105 formed over the first substrate 101 is in contact with the insulator 109 which is the outermost layer among the layers formed over the second substrate 107 is described. By reducing the distance d in this manner, the accuracy of the shape of the film formed over the second substrate 107 can be improved when light is irradiated as illustrated in FIG. Note that as shown in this embodiment mode, the distance d may be large when the film is formed over the entire surface of the second substrate. However, it is preferably 2 mm or less from the viewpoint of material utilization efficiency and film thickness control. In addition, when the surface of the second substrate 107 is not uneven, the material layer 105 on the first substrate 101 and the second substrate are prevented from being transmitted to the deposition surface. It is preferable that the film formation surface 107 is not in contact.

  In FIG. 1, the case where a layer common to all pixels is formed has been described. By using the method shown in FIG. 1, a light-emitting device having the same structure, that is, a monochromatic light-emitting device can be manufactured. For example, when the EL layer 111 is a light-emitting layer, a monochromatic light-emitting device having only the light-emitting layer between a pair of electrodes can be manufactured by the method illustrated in FIGS. In addition, by repeating the method illustrated in FIG. 1 and stacking a plurality of layers, a light-emitting device having a single-color light-emitting device and a plurality of layers between a pair of electrodes can be manufactured. For example, a part of an EL layer (a hole injection layer, a hole transport layer, or the like) is formed on the second substrate 107 which is a deposition target substrate by using the first deposition substrate and the method shown in FIG. Form. After that, a second substrate on which a part of the EL layer (hole injection layer, hole transport layer, etc.) is formed as shown in FIG. A light emitting layer may be formed thereon.

  Note that in the case where a material with low thermal stability such as an organic compound is already formed over the deposition target substrate, the first substrate 101 is used so that heat is not transmitted to the film already formed. The upper material layer 105 and the deposition surface of the second substrate 107 are preferably not in contact with each other.

  Further, although the case where the second substrate 107 is located above the first substrate 101 is illustrated in this embodiment mode, the present invention is not limited to this. The direction in which the substrate is installed can be set as appropriate. Note that in the case where the first substrate 101 is formed by a wet method, it is not necessary to invert the first substrate 101 after the first substrate 101 is formed by a wet method. Therefore, the second substrate 107 is formed above the first substrate 101. It is preferable to arrange.

  By using the film formation method described in this embodiment, a flat and uniform film can be formed.

  In addition, when the deposition substrate described in this embodiment is prepared in advance and the deposition substrate is replaced, deposition can be successively performed on the deposition target substrate. Therefore, the time (takt time) required for manufacturing the light emitting device can be shortened and productivity can be improved.

  In addition, the deposition substrate once used for deposition can be used a plurality of times by removing the material layer and forming a new material layer again. Thus, the cost for manufacturing the light-emitting device can be reduced. The film formation substrate according to the present invention uses a glass substrate or a quartz substrate as a support substrate. These substrates are less likely to adsorb or adhere impurities (such as moisture) than film substrates. Therefore, the deposition substrate according to the present invention is suitable for reuse.

  In addition, unlike the case where an EL layer is directly formed over a deposition target substrate using a wet method, the deposition method described in this embodiment does not need to consider solubility of a layer that has already been formed. Therefore, the choice of the type of material for film formation is expanded. Further, the number of layers to be stacked can be freely set. Thus, by using the film formation method described in this embodiment, a light-emitting device having a desired stacked structure can be manufactured using a desired material. In particular, when the substrate is increased in size, it is important in terms of improving the performance of the light-emitting device that the type of material used and the laminated structure can be freely designed.

  In addition, when a light-emitting device is manufactured by directly forming a film over a deposition substrate using a wet method, the light emission efficiency is higher than when a light-emitting device is manufactured using a dry method due to the influence of a solvent, impurities, or the like. In many cases, performance such as life span is inferior. However, since the film formation method described in this embodiment forms a film by heating a material to be formed, the influence of a solvent can be reduced.

  Further, in the deposition method described in this embodiment, deposition is performed in a state where the distance between the deposition substrate and the deposition target substrate is small. Therefore, most of the material layer provided over the deposition substrate is deposited over the deposition target substrate, so that the material utilization efficiency is high. Therefore, the manufacturing cost can be reduced. In addition, since the film formation is performed in a state where the distance between the film formation substrate and the film formation substrate is small, the material can be prevented from adhering to the inner wall of the film formation chamber, and the film formation apparatus can be easily maintained.

  In the present invention, since a high-power laser beam can be used as a light source, it is possible to form a film over a large area. Therefore, the time (takt time) required for manufacturing the light emitting device can be shortened, and productivity can be improved.

  In addition, by using the film formation method described in this embodiment mode, the film thickness of the material layer formed over the first substrate is controlled, so that the film is formed over the second substrate which is a deposition target substrate. The thickness of the film to be formed can be controlled. That is, the film thickness of the material layer is set in advance so that the film formed on the second substrate has a desired film thickness by depositing all the materials included in the material layer formed on the first substrate. Since it is controlled, it is not necessary to monitor the film thickness when the film is formed on the second substrate. Therefore, it is not necessary for the user to adjust the film formation rate using the film thickness monitor, and the film formation process can be fully automated. Therefore, productivity can be improved.

  In addition, by using the film formation method described in this embodiment, the material included in the material layer 105 formed over the first substrate can be formed uniformly. Even when the material layer 105 includes a plurality of materials, a film containing the same material as the material layer 105 in substantially the same weight ratio can be formed over the second substrate which is a deposition substrate. Therefore, by using the film formation method described in this embodiment mode, it is not necessary to control the evaporation rate as in the case of co-evaporation even when a film is formed using a plurality of materials having different vaporization temperatures. Therefore, it is possible to easily and accurately form a layer containing different desired materials without complicated control of the deposition rate or the like.

(Embodiment 2)
In Embodiment Mode 1, the case where a layer common to all pixels is formed has been described. However, when a full-color light emitting device is manufactured, at least the light emitting layer needs to be applied separately. Therefore, in this embodiment, a method for forming different layers in each light-emitting element is described.

  FIG. 3A illustrates an example of a deposition substrate. In the deposition substrate illustrated in FIG. 3A, a reflective layer 102 is formed over a first substrate 101 which is a supporting substrate. The reflective layer 102 has an opening 106. The opening 106 is patterned so as to correspond to a region where film formation is desired on the film formation substrate. A light absorption layer 104 is formed on the reflective layer 102. A material layer 105 containing a material to be deposited on the deposition target substrate is formed over the light absorption layer 104. In FIG. 3A, the light absorption layer 104 and the material layer 105 are formed over the entire surface of the first substrate 101.

  In FIG. 3A, the structure described in Embodiment 1 can be applied to the first substrate 101, the light absorption layer 104, and the material layer 105.

  The reflective layer 102 is a layer for reflecting light irradiated to other portions in order to selectively irradiate light to a part of the light absorption layer 104 during film formation. Therefore, the reflective layer 102 is preferably formed of a material having a high reflectance with respect to the light to be irradiated. Specifically, the reflective layer 102 preferably has a reflectance of 85% or more, more preferably 90% or more, with respect to the irradiated light. When the reflectance is 85% or more, preferably 90% or more, it is possible to prevent the reflection layer from absorbing irradiated light and converting it to heat.

  As a material that can be used for the reflective layer 102, for example, silver, gold, platinum, copper, an alloy containing aluminum, an alloy containing silver, indium oxide-tin oxide, or the like can be used.

  Note that since the type of material suitable for the reflective layer 102 varies depending on the wavelength of light to be irradiated, it is necessary to select a material as appropriate.

  Note that the reflective layer 102 can be formed by various methods. For example, it can be formed by sputtering, electron beam vapor deposition, vacuum vapor deposition, or the like. Moreover, although the film thickness of the reflective layer 102 changes with materials, it is preferable to set it as 100 nm or more. By setting it as a film thickness of 100 nm or more, it can suppress that the irradiated light permeate | transmits a reflective layer.

  Various methods can be used to form the opening 106 in the reflective layer 102, but dry etching is preferably used. By using dry etching, the sidewall of the opening 106 becomes sharp and a fine pattern can be formed.

  Note that the reflectance between the reflective layer 102 and the light absorbing layer 104 is preferably as large as possible. Specifically, the difference in reflectance with respect to the wavelength of light to be irradiated is preferably 25% or more, more preferably 30% or more.

  Next, as illustrated in FIG. 3B, at one surface of the first substrate 101 that faces the surface on which the reflective layer 102, the light absorption layer 104, and the material layer 105 are formed. A second substrate 107 which is a deposition substrate is provided. The second substrate 107 is a deposition target substrate on which a desired layer is deposited by a deposition process. Over the second substrate 107, a first electrode 108 which serves as one electrode of the light-emitting element, and an insulator 109 are formed. Then, the distance d between the first substrate 101 and the second substrate 107 is a close distance, specifically, the distance d between the surface of the material layer 105 on the first substrate 101 and the surface of the second substrate 107 is 0 mm or more. It is made to face 2 mm or less, preferably 0 mm to 0.05 mm, more preferably 0 mm to 0.03 mm. In particular, it is more desirable that the thickness be 0 μm or more and 3 μm or less.

  Next, as illustrated in FIG. 3C, the light 110 is irradiated from the back surface side (the surface on which the reflective layer 102, the light absorption layer 104, and the material layer 105 are not formed) of the first substrate 101. At this time, light applied to the reflective layer 102 formed over the first substrate 101 is reflected, but light applied to the opening 106 of the reflective layer 102 is absorbed by the light absorption layer 104. Then, the light absorption layer 104 is formed on the second substrate 107 with at least part of the material included in the material layer 105 by applying heat obtained from the absorbed light to the material included in the material layer 105. A material is formed over the first electrode 108. Thus, the EL layer 111 of the light emitting element is formed over the second substrate 107.

  As the irradiation light, laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less is used as in the first embodiment. By using laser light having a very large frequency and a very small pulse width in this manner, heat conversion in the light absorption layer 104 is efficiently performed, and the material can be efficiently heated.

  In addition, heat is transmitted in the plane direction from the light absorbing layer 104 where light is irradiated to the light absorbing layer 104 where light is not irradiated, so that the range of the heated material layer 105 is not expanded. Thus, it is preferable to shorten the light irradiation time.

In addition, film formation by light irradiation is preferably performed in a reduced pressure atmosphere. Therefore, it is preferable that the film formation chamber has an atmosphere of 5 × 10 ⁻³ Pa or less, preferably 10 ⁻⁴ Pa to 10 ⁻⁶ Pa.

  Laser light with a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less used in the present invention can be irradiated with laser light for a short time, so that heat diffusion can be suppressed and a fine pattern can be formed. It becomes. In addition, since laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be output, a large area can be processed at a time, and the time required for film formation can be reduced. Therefore, productivity can be improved.

  In addition, in the case where there is a possibility that light transmitted through the opening of the reflective layer 102 may circulate, a structure in which the opening of the reflective layer 102 is made small is effective in consideration of the irradiating light. In this case, since the light transmitted through the opening 106 of the reflective layer 102 spreads until the light absorption layer 104 is irradiated, the material layer 105 having a wider range than the region corresponding to the opening 106 of the reflective layer 102 is heated. , Deposited on the second substrate 107.

  3A, the material layer 105 is formed over the entire surface of the light absorption layer 104. However, as illustrated in FIG. 3D, the material layer 105 is formed only on a portion corresponding to the opening 106. It may be formed. By using an inkjet method or the like, the material layer 105 can be formed only in a portion corresponding to the opening 106. In this manner, the material utilization efficiency can be further improved by partially forming the material layer 105 so as to correspond to the film formation region.

  FIG. 4A shows the case where the distance d between the first substrate 101 and the second substrate 107 is 0 mm. That is, the case where the material layer 105 formed over the first substrate 101 is in contact with the insulator 109 which is the outermost layer among the layers formed over the second substrate 107 is described. By reducing the distance d in this manner, the accuracy of the shape of the film formed over the second substrate 107 can be improved when light is irradiated as illustrated in FIG. However, in the case where there is no unevenness on the surface of the second substrate 107, the material layer 105 on the first substrate 101 and the second substrate are prevented from being transmitted to the deposition surface. It is preferable that the film formation surface 107 is not in contact.

  Further, a heat insulating layer may be provided in the deposition substrate. FIG. 5A illustrates an example of a deposition substrate provided with a heat insulating layer. In the deposition substrate illustrated in FIG. 5A, a reflective layer 102 is formed over a first substrate 101 which is a supporting substrate. The reflective layer 102 has an opening 106. The opening 106 is patterned so as to correspond to a region where film formation is desired on the film formation substrate. In addition, a heat insulating layer 103 is formed on the reflective layer 102. Note that in FIG. 5A, part of the heat insulating layer 103 is formed so as to fill the opening 106 of the reflective layer 102. In addition, a light absorption layer 104 is formed on the heat insulating layer 103. A material layer 105 containing a material to be deposited on the deposition target substrate is formed over the light absorption layer 104. In FIG. 5A, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 are formed over the entire surface of the first substrate 101.

  In FIG. 5A, the structure described in Embodiment 1 can be applied to the first substrate 101, the light absorption layer 104, and the material layer 105. Further, the above-described configuration can be applied to the reflective layer 102.

  In the heat insulating layer 103, when a part of the light irradiated by the reflective layer 102 out of the light irradiated at the time of film formation becomes heat and remains in the reflective layer, the heat is absorbed by the light absorption layer 104 and the material. This is a layer for preventing transmission to the layer 105. Therefore, the heat insulating layer 103 needs to use a material whose thermal conductivity is lower than the material forming the reflective layer 102 and the light absorption layer 104. In addition, as shown in FIG. 5, in the case where the light transmitted through the opening 106 of the reflective layer 102 is transmitted through the heat insulating layer 103 and irradiated to the light absorption layer, the heat insulating layer 103 has a light transmitting property. There is a need. In this case, the heat insulating layer 103 needs to be made of a material having a low thermal conductivity and a high light transmittance. Specifically, it is preferable to use a material having a light transmittance of 60% or more for the heat insulating layer 103.

  Examples of the material used for the heat insulating layer 103 include titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, and silicon carbide.

  Note that the heat insulating layer 103 can be formed by various methods. For example, it can be formed by sputtering, electron beam evaporation, vacuum evaporation, CVD, or the like. Moreover, although the film thickness of the heat insulation layer 103 changes with materials, it is preferable to set it as 10 nm or more and 2 micrometers or less, More preferably, you may be 100 nm or more and 600 nm or less. By setting the film thickness to 10 nm or more and 2 μm or less, heat existing in the reflective layer 102 is transmitted to the light absorption layer 104 and the material layer 105 while transmitting the light irradiated through the opening 106 of the reflective layer 102. Has the effect of blocking

  As shown in FIG. 5B, at one surface of the first substrate 101 facing the surface on which the reflective layer 102, the heat insulating layer 103, the light absorbing layer 104, and the material layer 105 are formed. A second substrate 107 which is a deposition target substrate is disposed. The second substrate 107 is a deposition target substrate on which a desired layer is deposited by a deposition process. Over the second substrate 107, a first electrode 108 which serves as one electrode of the light-emitting element, and an insulator 109 are formed. Then, the distance d between the first substrate 101 and the second substrate 107 is a close distance, specifically, the distance d between the surface of the material layer 105 on the first substrate 101 and the surface of the second substrate 107 is 0 mm or more. It is made to face 2 mm or less, preferably 0 mm to 0.05 mm, more preferably 0 mm to 0.03 mm. In particular, it is more desirable that the thickness be 0 μm or more and 3 μm or less.

  Next, as illustrated in FIG. 5C, the light 110 is emitted from the back surface (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 are not formed) of the first substrate 101. Irradiate. At this time, the light applied to the reflective layer 102 formed on the first substrate 101 is reflected, but the light applied to the opening 106 of the reflective layer 102 passes through the heat insulating layer 103 and absorbs light. Absorbed by layer 104. Then, the light absorption layer 104 is formed on the second substrate 107 with at least part of the material included in the material layer 105 by applying heat obtained from the absorbed light to the material included in the material layer 105. A material is formed over the first electrode 108. Thus, the EL layer 111 of the light emitting element is formed over the second substrate 107.

  5A, the material layer 105 is formed over the entire surface of the light absorption layer 104. However, as illustrated in FIG. 5D, the material layer 105 is formed only on a portion corresponding to the opening 106. It may be formed. By using an inkjet method or the like, the material layer 105 can be formed only in a portion corresponding to the opening 106. In this manner, the material utilization efficiency can be further improved by partially forming the material layer 105 so as to correspond to the film formation region.

  As the irradiation light, laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less is used as in the first embodiment. By using laser light having a very large frequency and a very small pulse width in this manner, heat conversion in the light absorption layer 104 is efficiently performed, and the material can be efficiently heated.

  In addition, heat is transmitted in the plane direction from the light absorbing layer 104 where light is irradiated to the light absorbing layer 104 where light is not irradiated, so that the range of the heated material layer 105 is not expanded. Thus, it is preferable to shorten the light irradiation time.

In addition, film formation by light irradiation is preferably performed in a reduced pressure atmosphere. Therefore, it is preferable that the film formation chamber has an atmosphere of 5 × 10 ⁻³ Pa or less, preferably 10 ⁻⁴ Pa to 10 ⁻⁶ Pa.

  Laser light with a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less used in the present invention can be irradiated with laser light for a short time, so that heat diffusion can be suppressed and a fine pattern can be formed. It becomes. In addition, since laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less can be output, a large area can be processed at a time, and the time required for film formation can be reduced. Therefore, productivity can be improved.

  By providing the heat insulating layer 103, when a part of the light reflected by the reflective layer 102 out of the light irradiated at the time of film formation becomes heat and remains in the reflective layer, the heat is absorbed by the light absorption layer. 104 and the material layer 105 can be prevented from being transmitted. Therefore, it is possible to form a film only in a desired region with higher accuracy. In addition, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  FIG. 6A shows the case where the distance d between the first substrate 101 and the second substrate 107 is 0 mm. That is, the case where the material layer 105 formed over the first substrate 101 is in contact with the insulator 109 which is the outermost layer among the layers formed over the second substrate 107 is described. By reducing the distance d in this manner, the accuracy of the shape of the film formed over the second substrate 107 can be improved when light is irradiated as illustrated in FIG. However, in the case where there is no unevenness on the surface of the second substrate 107, the material layer 105 on the first substrate 101 and the second substrate are prevented from being transmitted to the deposition surface. It is preferable that the film formation surface 107 is not in contact.

  Further, the structure of the deposition substrate is not limited to the structure illustrated in FIGS. For example, the structure shown in FIG.

  In the structure illustrated in FIG. 7A, the reflective layer 102 having the opening 106 is formed over the first substrate 101, and the heat insulating layer 103 is formed over the entire surface of the reflective layer 102. A light absorption layer 104 is patterned in a region corresponding to the opening 106, and a material layer 105 is formed on the entire surface thereof. With such a structure, diffusion of heat in the surface direction of the light absorption layer can be suppressed, and blurring of the film formation pattern can be suppressed. In addition, since the light absorption layer 104 is formed only in a region where the film is to be formed, even when the film formation substrate and the film formation substrate are in contact with each other (with a distance d = 0), the film formation is not performed. Heat is not easily transmitted to the film substrate. Therefore, the film can be formed with higher accuracy by reducing the distance d. Therefore, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  In the structure illustrated in FIG. 7B, the reflective layer 102 having the opening 106 is formed over the first substrate 101, and the heat insulating layer 103 is formed over the entire surface of the reflective layer 102. A second heat insulating layer 112 is formed in a region corresponding to the reflective layer 102 on the heat insulating layer 103, and a light absorbing layer 104 is patterned in a region corresponding to the opening 106. A material layer 105 is formed on the entire surface. With such a structure, diffusion of heat in the surface direction of the light absorption layer can be suppressed, and blurring of the film formation pattern can be suppressed. In addition, since the light absorption layer 104 is formed only in a region where the film is to be formed, even when the film formation substrate and the film formation substrate are in contact with each other (with a distance d = 0), the film formation is not performed. Heat is not easily transmitted to the film substrate. Therefore, the film can be formed with higher accuracy by reducing the distance d. Therefore, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  In the structure illustrated in FIG. 7C, the reflective layer 102 having the opening 106 is formed over the first substrate 101, and the heat insulating layer 103 is formed over the reflective layer 102. The heat insulating layer 103 is formed corresponding to the region where the reflective layer 102 is formed. A light absorption layer 104 and a material layer 105 are formed on the entire surface. With such a structure, when a part of the reflected light becomes heat and remains in the reflective layer, the heat can be prevented from being transmitted to the light absorption layer 104 and the material layer 105. Therefore, it is possible to form a film only in a desired region with higher accuracy. In addition, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  The structure illustrated in FIG. 7D is a structure in which the heat insulating layer 103 is thickened (preferably, 1 μm to 10 μm) in the structure illustrated in FIG. By increasing the thickness of the heat insulating layer 103, the light absorption layer 104 can have a discontinuous configuration. That is, a structure in which the light absorption layer formed in the opening 106 and the light absorption layer formed on the heat insulating layer 103 are not connected can be obtained. Therefore, heat from the light absorption layer that has absorbed light in the opening 106 is not transmitted to the light absorption layer formed on the heat insulating layer 103, and diffusion of heat in the surface direction of the light absorption layer is suppressed. Therefore, blurring of the film formation pattern can be suppressed. Further, even when a film is formed so that the film formation substrate and the film formation substrate are in contact with each other (with a distance d = 0), heat is not easily transmitted to the film formation substrate. Therefore, the film can be formed with higher accuracy by reducing the distance d. Therefore, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  The structure illustrated in FIG. 7E is a structure in which the second heat insulating layer 112 is provided between the light absorption layer 104 and the material layer 105 in the structure illustrated in FIG. That is, the reflective layer 102 having the opening 106 is formed over the first substrate 101, and the heat insulating layer 103 is formed over the reflective layer 102. The heat insulating layer 103 is formed corresponding to the region where the reflective layer 102 is formed. On top of this, the light absorption layer 104 is formed on the entire surface, and the second heat insulating layer 112 is formed in a region corresponding to the reflective layer 102 and the heat insulating layer 103. A material layer 105 is formed on the entire surface. With such a configuration, even when heat is diffused in the surface direction of the light absorption layer 104, it is not transmitted to a material layer other than a desired region, so that blurring of a film formation pattern can be suppressed. Further, even when a film is formed so that the film formation substrate and the film formation substrate are in contact with each other (with a distance d = 0), heat is not easily transmitted to the film formation substrate. Therefore, the film can be formed with higher accuracy by reducing the distance d. Therefore, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  The structure illustrated in FIG. 7F is a structure in which the second heat insulating layer 112 is thickened in the structure illustrated in FIG. By increasing the thickness of the second heat insulating layer 112, the material layer 105 can have a discontinuous structure. That is, a structure in which the material layer formed in the opening 106 and the material layer formed over the second heat insulating layer 112 are not connected can be obtained. Therefore, even when heat diffuses in the surface direction of the light absorption layer 104, it is not transmitted to a material layer other than a desired region, so that the film formation pattern can be prevented from being blurred. Further, even when a film is formed so that the film formation substrate and the film formation substrate are in contact with each other (with a distance d = 0), heat is not easily transmitted to the film formation substrate. Therefore, the film can be formed with higher accuracy by reducing the distance d. Therefore, a finer pattern can be formed, and a high-definition light-emitting device can be manufactured.

  The structure illustrated in FIG. 7G is a structure in which the heat insulating layer 103 is formed over the entire surface in the structure illustrated in FIG. In the structure illustrated in FIG. 7G, a finer pattern can be formed as in the structure illustrated in FIG. 7E, so that a high-definition light-emitting device can be manufactured.

  The structure illustrated in FIG. 7H is a structure in which the heat insulating layer 103 is formed over the entire surface in the structure illustrated in FIG. In the structure illustrated in FIG. 7H, a finer pattern can be formed as in the structure illustrated in FIG. 7F, so that a high-definition light-emitting device can be manufactured.

  Note that although the case where the second substrate 107 is located above the first substrate 101 is illustrated in this embodiment mode, the present invention is not limited to this. The direction in which the substrate is installed can be set as appropriate. Note that in the case where the first substrate 101 is formed by a wet method, it is not necessary to invert the first substrate 101 after the first substrate 101 is formed by a wet method. Therefore, the second substrate 107 is formed above the first substrate 101. It is preferable to arrange.

  By using the deposition method described in this embodiment mode, deposition can be performed only in a desired region. Therefore, a film can be formed for each pixel by using the film formation method described in this embodiment. A full-color light-emitting device can be manufactured by forming a light-emitting layer for each light-emitting element by using the deposition method described in this embodiment. For example, in the case where an EL layer other than the light-emitting layer (a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, or the like) is formed, the film formation method described in this embodiment is used. The optimum structure for each light emitting element can be created. For example, optical design such as changing the film thickness of the EL layer in accordance with the emission wavelength, or changing the material used in each light-emitting element can be facilitated.

  The case where three different EL layers are formed using the deposition substrate described in this embodiment will be described below.

  First, for example, three deposition substrates illustrated in FIG. 5A are prepared. Each film-forming substrate is formed with a material layer for forming EL layers having different light emission. Specifically, a first deposition substrate having a material layer (R) containing a material for forming an EL layer that emits red light (EL layer (R)), and an EL layer (EL that emits green light) A second film formation substrate having a material layer (G) including a material for forming the layer (G)) and a material for forming an EL layer (EL layer (B)) that emits blue light. A third film formation substrate having a material layer (B) is prepared.

  In this embodiment mode, one deposition target substrate having a plurality of first electrodes illustrated in FIG. 5B is prepared. Note that since the end portions of the plurality of first electrodes over the deposition target substrate are covered with an insulator, the light-emitting region is part of the first electrode and does not overlap with the insulator. It corresponds to the area exposed to.

  First, as a first film formation step, the film formation substrate and the first film formation substrate are overlapped and aligned as in FIG. 5B. Note that an alignment marker is preferably provided on the deposition target substrate. In addition, it is preferable to provide an alignment marker also on the first film formation substrate. Note that since the first film-formation substrate is provided with the light absorption layer, the light absorption layer around the alignment marker is preferably removed in advance. In addition, since the first deposition substrate is provided with the material layer (R), it is preferable to remove the material layer (R) around the alignment marker in advance.

  Then, light is irradiated from the back surface side (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 illustrated in FIG. 5 are not formed) of the first film formation substrate. The light absorption layer absorbs the irradiated light and applies heat to the material layer (R), thereby heating the material included in the material layer (R), and a part of the first first layer on the deposition target substrate. An EL layer (R) is formed on the electrode. After the first film formation, the first film formation substrate is moved to a location away from the film formation substrate.

  Next, as a second deposition step, the deposition target substrate and the second deposition substrate are overlapped and aligned. The second film-formation substrate is formed with an opening of the reflective layer that is shifted by one pixel from the first film-formation substrate used in the first film-formation.

  Then, light is irradiated from the back surface side (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 shown in FIG. 5 are not formed) of the second deposition substrate. The light absorption layer absorbs irradiated light and applies heat to the material layer (G), thereby heating the material included in the material layer (G), and being a part on the deposition target substrate, The EL layer (G) is formed over the first electrode next to the first electrode on which the EL layer (R) is formed in the first deposition. After the second film formation, the second film formation substrate is moved away from the film formation substrate.

  Next, as a third deposition step, the deposition target substrate and the third deposition substrate are overlapped and aligned. In the third film formation substrate, an opening of the reflective layer is formed by being shifted by two pixels from the first film formation substrate used in the first film formation.

  Then, light is irradiated from the back surface side (the surface on which the reflective layer 102, the heat insulating layer 103, the light absorption layer 104, and the material layer 105 illustrated in FIG. 5 are not formed) of the third deposition substrate. The state immediately before the third film formation corresponds to the top view of FIG. In FIG. 14A, the reflective layer 401 has an opening 402. Therefore, light transmitted through the opening 402 of the reflective layer 401 of the third deposition substrate is transmitted through the heat insulating layer and absorbed by the light absorption layer. A first electrode is formed in a region of the deposition target substrate that overlaps with the opening 402 of the third deposition substrate. Note that an EL layer (R) 411 already formed by the first film formation and an EL layer (G) formed by the second film formation are below the region indicated by the dotted line in FIG. 412 is located.

  Then, the EL layer (B) 413 is formed by the third deposition. The light absorption layer absorbs the irradiated light and applies heat to the material layer (B), thereby heating the material contained in the material layer (B), and being a part on the deposition target substrate, The EL layer (B) 413 is formed over the first electrode next to the first electrode on which the EL layer (G) 412 is formed in the second deposition. After the third deposition, the third deposition substrate is moved to a location away from the deposition target substrate.

  In this manner, the EL layer (R) 411, the EL layer (G) 412, and the EL layer (B) 413 can be formed over the same deposition target substrate at regular intervals. A light emitting element can be formed by forming a second electrode over these films.

  Through the above process, a light-emitting element capable of full color display can be formed by forming light-emitting elements that emit different light on the same substrate.

  FIG. 14 illustrates an example in which the shape of the opening 402 of the reflective layer formed on the deposition substrate is rectangular, but the shape is not particularly limited, and a stripe-shaped opening may be used. In the case of a stripe-shaped opening, a film is also formed between light emitting regions having the same light emission color. However, since the film is formed on the insulator 414, a portion overlapping with the insulator 414 is not a light emitting region. .

  The arrangement of the pixels is not particularly limited, and as shown in FIG. 15A, one pixel shape may be a polygon, for example, a hexagon, and the EL layer (R) 511, the EL layer (G) 512, The EL layer (B) 513 can be provided to realize a full color light emitting device. Note that in order to form the polygonal pixel illustrated in FIG. 15A, a film can be formed using the deposition substrate including the reflective layer 501 having the polygonal opening 502 illustrated in FIG. Good.

  By using the film formation method described in this embodiment, a flat and uniform film can be formed. In addition, since a film can be formed only in a desired region, a fine pattern can be formed, and a high-definition light-emitting device can be manufactured.

  In addition, when the deposition substrate described in this embodiment is prepared in advance and the deposition substrate is replaced, deposition can be successively performed on the deposition target substrate. Therefore, the time (takt time) required for manufacturing the light emitting device can be shortened and productivity can be improved.

  In addition, the deposition substrate once used for deposition can be used a plurality of times by removing the material layer and forming a new material layer again. Thus, the cost for manufacturing the light-emitting device can be reduced. The film formation substrate according to the present invention uses a glass substrate or a quartz substrate as a support substrate. These substrates are less likely to adsorb or adhere impurities (such as moisture) than film substrates. Therefore, the deposition substrate according to the present invention is suitable for reuse.

  In addition, unlike the case where an EL layer is directly formed over a deposition target substrate using a wet method, the deposition method described in this embodiment does not need to consider solubility of a layer that has already been formed. Therefore, the choice of the type of material for film formation is expanded. Further, the number of layers to be stacked can be freely set. Thus, by using the film formation method described in this embodiment, a light-emitting device having a desired stacked structure can be manufactured using a desired material. In particular, when the substrate is increased in size, it is important in terms of improving the performance of the light-emitting device that the type of material used and the laminated structure can be freely designed.

  In addition, when a light-emitting device is manufactured by directly forming a film over a deposition substrate using a wet method, the light emission efficiency is higher than when a light-emitting device is manufactured using a dry method due to the influence of a solvent, impurities, or the like. In many cases, performance such as life span is inferior. However, since the film formation method described in this embodiment forms a film by heating a material to be formed, the influence of a solvent can be reduced.

  Further, in the deposition method described in this embodiment, deposition is performed in a state where the distance between the deposition substrate and the deposition target substrate is small. Therefore, most of the material layer provided over the deposition substrate is deposited over the deposition target substrate, so that the material utilization efficiency is high. Therefore, the manufacturing cost can be reduced. In addition, since the film formation is performed in a state where the distance between the film formation substrate and the film formation substrate is small, the material can be prevented from adhering to the inner wall of the film formation chamber, and the film formation apparatus can be easily maintained.

  In the present invention, since a high-power laser beam can be used as a light source, it is possible to form a film over a large area. Therefore, the time (takt time) required for manufacturing the light emitting device can be shortened, and productivity can be improved.

  In addition, by using the film formation method described in this embodiment mode, the film thickness of the material layer formed over the first substrate is controlled, so that the film is formed over the second substrate which is a deposition target substrate. The thickness of the film to be formed can be controlled. That is, the film thickness of the material layer is set in advance so that the film formed on the second substrate has a desired film thickness by depositing all the materials included in the material layer formed on the first substrate. Since it is controlled, it is not necessary to monitor the film thickness when the film is formed on the second substrate. Therefore, it is not necessary for the user to adjust the film formation rate using the film thickness monitor, and the film formation process can be fully automated. Therefore, productivity can be improved.

  In addition, by using the film formation method described in this embodiment, the material included in the material layer 105 formed over the first substrate can be formed uniformly. Even when the material layer 105 includes a plurality of materials, a film containing the same material as the material layer 105 in substantially the same weight ratio can be formed over the second substrate which is a deposition substrate. Therefore, by using the film formation method described in this embodiment mode, it is not necessary to control the evaporation rate as in the case of co-evaporation even when a film is formed using a plurality of materials having different vaporization temperatures. Therefore, it is possible to easily and accurately form a layer containing different desired materials without complicated control of the deposition rate or the like.

  Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 3)
In this embodiment, a method for manufacturing a light-emitting device by combining the deposition method described in Embodiment 1 and the deposition method described in Embodiment 2 will be described.

  In this embodiment, as an example, a method for manufacturing a full-color light-emitting device in which a light-emitting layer among EL layers is separately formed and a layer other than the light-emitting layer is formed as a common layer will be described.

  First, the hole injecting layer 211 is formed over the first electrode 108 formed over the second substrate 107 which is a deposition target substrate by the deposition method described in Embodiment 1. With the film formation method described in Embodiment 1, the hole injection layer 211 can be formed over the entire surface of the pixel portion and can be used as a common layer in each light-emitting element.

  Next, as shown in FIG. 8, a hole transport layer 212 is formed on the hole injection layer 211. With the deposition method described in Embodiment 1, the hole-transport layer 212 can be formed over the entire surface of the pixel portion and can be used as a common layer in each light-emitting element.

  Next, as shown in FIG. 9, the light emitting layer 213A is formed. Since the light-emitting device of this embodiment can perform full-color display, the light-emitting layer 213A is formed only in a region corresponding to a red pixel, for example. By using the film formation method described in Embodiment 2, the light-emitting layer 213A can be formed only in a region corresponding to a red pixel.

  Next, as shown in FIG. 10, a light emitting layer 213B is formed. Since the light-emitting device of this embodiment can perform full-color display, the light-emitting layer 213B is formed only in a region corresponding to a green pixel, for example. By using the film formation method described in Embodiment 2, the light-emitting layer 213B can be formed only in a region corresponding to a green pixel.

  Next, as shown in FIG. 11, a light emitting layer 213C is formed. Since the light-emitting device of this embodiment can perform full-color display, the light-emitting layer 213C is formed only in a region corresponding to a blue pixel, for example. By using the film formation method described in Embodiment 2, the light-emitting layer 213C can be formed only in a region corresponding to a blue pixel.

  Next, as shown in FIG. 12, the electron transport layer 214 is formed on the light emitting layers 213A to 213C. With the film formation method described in Embodiment 1, the electron-transport layer 214 can be formed over the entire surface of the pixel portion and can be a layer common to each light-emitting element.

  Next, as shown in FIG. 13, an electron injection layer 215 is formed on the electron transport layer 214. With the film formation method described in Embodiment 1, the electron injection layer 215 can be formed over the entire surface of the pixel portion to be a common layer in each light-emitting element.

  After that, a second electrode can be formed over the electron injection layer 215, whereby a light emitting element can be manufactured.

  Note that although a structure in which each light-emitting element includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer is described in this embodiment mode, layers other than the light-emitting layer are provided as appropriate. That's fine. Moreover, you may make it a different structure for every light emitting element. By using the film formation method described in Embodiment Mode 2, a layer can be easily formed for each light-emitting element.

  In this embodiment mode, the method of sequentially forming the light emitting layer of the red pixel, the light emitting layer of the green pixel, and the light emitting layer of the blue pixel is described, but the order of forming is not limited to this. Further, the pixel is not limited to three colors, and other white pixels may be provided. Also in this case, the film forming method shown in Embodiment Mode 1 or Embodiment Mode 2 can be used.

  In the present embodiment, the method of separately forming the light emitting layer for the red pixel, the light emitting layer for the green pixel, and the light emitting layer for the blue pixel has been described. However, by forming the blue light emitting layer over the entire surface, A structure that functions as a light-emitting layer and functions as a hole-transporting layer in other pixels can also be used.

  Further, in the method for manufacturing the light-emitting device described in this embodiment, a film formation substrate is prepared in advance and the film formation substrate can be replaced, whereby a film can be sequentially formed on the film formation substrate. Therefore, the time (takt time) required for manufacturing the light emitting device can be shortened and productivity can be improved.

  In addition, the deposition substrate once used for deposition can be used a plurality of times by removing the material layer and forming a new material layer again. Thus, the cost for manufacturing the light-emitting device can be reduced.

  In addition, the method for manufacturing the light-emitting device described in this embodiment mode needs to consider solubility of an already formed layer, unlike the case where an EL layer is directly formed over a deposition substrate using a wet method. Therefore, the choice of the kind of material for forming a film is widened. Further, the number of layers to be stacked can be freely set. Therefore, by using the method for manufacturing a light-emitting device described in this embodiment, a light-emitting device having a desired stacked structure can be manufactured using a desired material. In particular, when the substrate is increased in size, it is important in terms of improving the performance of the light-emitting device that the type of material used and the laminated structure can be freely designed.

  In addition, when a light-emitting device is manufactured by directly forming a film over a deposition substrate using a wet method, the light emission efficiency is higher than when a light-emitting device is manufactured using a dry method due to the influence of a solvent, impurities, or the like. In many cases, performance such as life span is inferior. However, since the method for manufacturing the light-emitting device described in this embodiment mode forms a film by heating a material to be formed, the influence of a solvent can be reduced.

  In the present invention, since a high-power laser beam can be used as a light source, it is possible to form a film over a large area. Therefore, the time (takt time) required for manufacturing the light emitting device can be shortened, and productivity can be improved.

  In addition, by using the method for manufacturing the light-emitting device described in this embodiment mode, it is not necessary for the user to adjust the deposition rate using a film thickness monitor, and the deposition process can be fully automated. . Therefore, productivity can be improved.

  In addition, by using the manufacturing method of the light-emitting device described in this embodiment mode, it is not necessary to control the evaporation rate as in the case of co-evaporation even when a film is formed using a plurality of materials having different vaporization temperatures. Therefore, it is possible to easily and accurately form a layer containing different desired materials without complicated control of the deposition rate or the like.

  Note that the structure described in this embodiment can be combined with any of the structures described in the other embodiments as appropriate.

(Embodiment 4)
In this embodiment, an example of a film formation apparatus that performs film formation by irradiating a film formation substrate with a laser and a method of irradiating a laser will be described.

  FIG. 16 is a perspective view showing an example of a film forming apparatus using a laser. The emitted laser light is output from a laser oscillation device 803 (YAG laser device, excimer laser device, etc.), and a first optical system 804 for making the beam shape rectangular, and a second optical system for shaping. 805 and the third optical system 806 for making parallel rays pass, and the optical path of the reflection mirror 807 is bent in a direction perpendicular to the first substrate 801 that is a film formation substrate. Thereafter, the film formation substrate is irradiated with a laser beam.

  The structure of the deposition substrate described in this embodiment is the same as that described in Embodiments 1 and 2. That is, at least a light absorption layer, a material layer 815, and the like are formed over the first substrate 801. In FIG. 16, as an example, a deposition substrate having a reflective layer is shown. An opening 814 is formed in the reflective layer. Note that FIG. 16 illustrates the case where the opening 814 has a stripe shape; however, the present invention is not limited to this, and the opening can be formed in a desired shape. For example, it may be dot-shaped or may have the same shape as the shape of the first electrode provided on the first substrate.

  Next, the surface of the first substrate 801 provided with the material layer 815 is faced up so as to face the deposition surface of the second substrate 800. The second substrate 800 and the first substrate 801 are aligned (aligned) by the alignment means, and are held with a certain distance d and at least 5 mm or less.

  In addition, the second substrate 800 is provided with a plurality of first electrodes in advance, but when an insulator serving as a partition for electrically insulating the first electrodes is further provided. The insulator and the material layer 815 may be placed in contact with each other.

  Further, the laser beam is scanned by moving the pair of substrates while maintaining the constant distance d. Here, the substrate moving means moves the pair of substrates in the long side direction or the short side direction of the rectangular window 820. Here, an example in which the substrate is moved and laser light is scanned is shown, but there is no particular limitation, and scanning may be performed by fixing the substrate and moving the laser light.

  The first substrate 801 is provided with a position marker 812 made of the same material as that of the light absorption layer, and the scanning reference position is recognized by the image sensor 808 for recognizing the position marker 812. It is preferable to adopt an apparatus configuration that does not block the visual field of the image sensor 808 such as a CCD. Note that since the first substrate 801 is recognized from below, the first substrate 801 may be irradiated with assisting illumination light. Although the example in which the image sensor 808 recognizes the position marker 812 via the window 820 is shown, the present invention is not particularly limited, and a separate window may be provided, or an image sensor may be provided inside the chamber.

  The emitted laser light is output from a laser oscillation device 803, and a first optical system 804 for making the beam shape rectangular, a second optical system 805 for shaping, and a first optical system for making parallel rays. 3, and the optical path is bent in a direction perpendicular to the first substrate 801 by the reflection mirror 807. After that, the laser beam is allowed to pass through the light transmitting window 120 and the first substrate 801, and the light absorption layer is irradiated with the laser beam. The window 820 can also function as a slit with a size equal to or smaller than the laser beam width.

  As the laser light serving as a light source, laser light having a frequency of 10 MHz or more and a pulse width of 100 fs or more and 10 ns or less is used. By using laser light having a very large frequency and a very small pulse width in this manner, heat conversion in the light absorption layer is efficiently performed. Therefore, the material included in the material layer 815 can be efficiently heated.

  Further, the wavelength of the laser beam is not particularly limited, and laser beams having various wavelengths can be used. For example, laser light having a wavelength such as 355, 515, 532, 1030, or 1064 nm can be used.

The laser light includes Ar laser, Kr laser, excimer laser and other gas laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic). YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants are used as the medium. Lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, fiber lasers and other solid lasers that are oscillated from one or more types can be used. Moreover, the second harmonic or the third harmonic oscillated from the solid-state laser can also be used.

  In addition, the shape of the laser spot irradiated to the first substrate 801 which is a deposition substrate is preferably rectangular or linear. For example, the short side is 1 mm to 5 mm and the long side is 10 mm to 50 mm. The rectangular shape may be used. In the case of using a large-area substrate, it is preferable to set the long side of the laser spot to 20 cm to 100 cm in order to shorten the processing time. Further, a plurality of laser oscillation devices and optical systems shown in FIG. 16 may be provided to process a large area substrate in a short time. Specifically, the processing area of one substrate may be shared by irradiating laser beams from a plurality of laser oscillation devices.

  Further, the control device 816 is preferably interlocked so that the substrate moving means for moving the pair of substrates can also be controlled. Further, the control device 816 is preferably interlocked so that the laser oscillation device 803 can also be controlled. Furthermore, the control device 816 is preferably interlocked with a position alignment mechanism having an image sensor 808 for recognizing the position marker 812.

  When the scanning with the laser light is completed, the material layer 815 that overlaps with the light absorption layer disappears in the first substrate 801, and film formation is selectively performed on the second substrate 800 that is disposed to face the first substrate 801. Note that in the first substrate 801, the material layer 815 that does not overlap with the light absorption layer remains. The first substrate 801 that has finished scanning with the laser light is collected and can be used again if the remaining material layer is removed.

  Note that FIG. 16 is an example, and there is no particular limitation on the positional relationship between the optical systems and electro-optical elements arranged in the optical path of the laser light. For example, the laser oscillation device 803 is disposed below the first substrate 801 that is a film formation substrate so that the laser light emitted from the laser oscillation device 803 is in a direction perpendicular to the main plane of the first substrate 801. If arranged, it is not necessary to use a reflecting mirror. Each optical system may use a condensing lens, a beam expander, a homogenizer, or a polarizer, or a combination thereof. Moreover, you may combine a slit as each optical system.

  By irradiating the irradiation area of the laser beam on the irradiated surface appropriately two-dimensionally, irradiation is performed on a large area of the substrate. In order to scan, the irradiation region of the laser beam and the substrate are relatively moved. Here, scanning is performed by a moving means (not shown) that moves the substrate stage 809 holding the substrate in the XY directions.

  In the case where film formation is performed using the film formation apparatus illustrated in FIG. 16, at least a first substrate 801 that is a film formation substrate and a second substrate 800 that is a film formation substrate are placed in a vacuum chamber. Further, all the configurations shown in FIG. 16 may be installed in the vacuum chamber.

The film formation apparatus shown in FIG. 16 shows an example of a so-called face-down film formation apparatus in which the film formation surface of the second substrate 800 which is a film formation substrate faces downward. A film forming apparatus of a type can also be used. In addition, when the deposition target substrate is a large-area substrate, in order to prevent the center of the substrate from being bent due to the weight of the substrate, the main plane of the deposition target substrate is set perpendicular to the horizontal plane, so-called vertical placement. It can also be a device of the type.

  In addition, a plurality of manufacturing apparatuses described in this embodiment can be provided to form a multi-chamber manufacturing apparatus. Of course, a combination with a film forming apparatus of another film forming method is also possible. Alternatively, a plurality of manufacturing apparatuses described in this embodiment can be arranged in series to form an inline manufacturing apparatus.

  A light-emitting device can be manufactured using such a film formation apparatus. In the present invention, when a wet method is used, a material layer on a deposition substrate can be easily prepared. Further, since the material layer on the deposition substrate may be deposited as it is, a film thickness monitor becomes unnecessary. Therefore, the film forming process can be fully automated, and throughput can be improved. Further, the material can be prevented from adhering to the film formation chamber wall, and the maintenance of the film formation apparatus can be facilitated.

  In the case where a light-emitting device is manufactured using the film formation apparatus described in this embodiment mode, the present invention is applied to selectively form a film in a desired region at the time of film formation using laser light. be able to. Therefore, the material utilization efficiency can be increased, and a flat and uniform film can be formed. In addition, a fine pattern can be formed. Therefore, by applying the present invention, the manufacturing cost of the light-emitting device can be reduced and a light-emitting device having excellent characteristics can be obtained.

  Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 5)
In this embodiment mode, a light-emitting element and a light-emitting device that can be manufactured by applying the present invention will be described.

  For example, the light-emitting element illustrated in FIGS. 17A and 17B can be manufactured by applying the present invention. In the light-emitting element illustrated in FIG. 17A, a first electrode 902, an EL layer 903 formed using only the light-emitting layer 913, and a second electrode 904 are sequentially stacked over a substrate 901. One of the first electrode 902 and the second electrode 904 functions as an anode, and the other functions as a cathode. The holes injected from the anode and the electrons injected from the cathode are recombined in the EL layer 903, so that light emission can be obtained. In this embodiment mode, the first electrode 902 is an electrode that functions as an anode, and the second electrode 904 is an electrode that functions as a cathode.

  In addition, the light-emitting element illustrated in FIG. 17B illustrates the case where the EL layer 903 in FIG. 17A has a structure in which a plurality of layers are stacked. Specifically, the light-emitting element illustrated in FIG. The hole injection layer 911, the hole transport layer 912, the light emitting layer 913, the electron transport layer 914, and the electron injection layer 915 are sequentially provided. Note that the EL layer 903 functions as long as it has at least the light-emitting layer 913 as illustrated in FIG. 17A. Therefore, it is not necessary to provide all of these layers, and the EL layer 903 is appropriately selected as necessary. That's fine.

  As the substrate 901 illustrated in FIG. 17, a substrate having an insulating surface or an insulating substrate is used. Specifically, various glass substrates, quartz substrates, ceramic substrates, sapphire substrates and the like used for the electronic industry such as aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass can be used.

  The first electrode 902 and the second electrode 904 can be formed using various metals, alloys, electrically conductive compounds, mixtures thereof, and the like. Specifically, for example, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (IZO), tungsten oxide, and oxide. Examples thereof include indium oxide containing zinc. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( Pd), or a nitride of a metal material (for example, titanium nitride).

  These materials are usually formed by sputtering. For example, indium oxide-zinc oxide can be formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide. Further, indium oxide containing tungsten oxide and zinc oxide can be formed by a sputtering method using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide. it can. In addition, a sol-gel method or the like may be applied to produce the ink-jet method or the spin coat method.

  Alternatively, aluminum (Al), silver (Ag), an alloy containing aluminum, or the like can be used. In addition, materials having a small work function, elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, alkali metals such as lithium (Li) and cesium (Cs), and magnesium (Mg) and calcium (Ca) Alkaline earth metals such as strontium (Sr), and alloys containing these (aluminum, magnesium and silver alloys, aluminum and lithium alloys), rare earth metals such as europium (Eu), ytterbium (Yb), and the like An alloy containing the same can also be used.

  A film of an alkali metal, an alkaline earth metal, or an alloy containing these can be formed using a vacuum evaporation method. An alloy containing an alkali metal or an alkaline earth metal can also be formed by a sputtering method. Further, a silver paste or the like can be formed by an inkjet method or the like. In addition, the first electrode 902 and the second electrode 904 are not limited to a single layer film and can be formed using a stacked film.

  Note that in order to extract light emitted from the EL layer 903 to the outside, one or both of the first electrode 902 and the second electrode 904 are formed so as to pass light. For example, a light-transmitting conductive material such as indium tin oxide is used, or silver, aluminum, or the like is formed to have a thickness of several nanometers to several tens of nanometers. Alternatively, a stacked structure of a thin metal film such as silver or aluminum and a thin film using a light-transmitting conductive material such as an ITO film can be used.

  Note that the EL layer 903 (a hole injection layer 911, a hole transport layer 912, a light-emitting layer 913, an electron transport layer 914, or an electron injection layer 915) of the light-emitting element described in this embodiment is described in any of Embodiments 1 to 1. The film formation method shown in Embodiment Mode 2 can be applied.

  For example, in the case of forming the light-emitting element illustrated in FIG. 17A, the material layer of the deposition substrate described in any of Embodiments 1 to 2 is formed using a material included in the light-emitting layer 913, and this formation is performed. A light-emitting layer 913 is formed over the first electrode 902 over the substrate 901 using the film substrate. Then, by forming the second electrode 904 over the light-emitting layer 913, the light-emitting element illustrated in FIG. 17A can be obtained.

  As shown in Embodiment Mode 1, when a material layer is formed over a deposition substrate, a wet method is used. In order to form the material layer 105 using a wet method, a desired material may be dissolved or dispersed in a solvent to prepare a solution or dispersion. The solvent is not particularly limited as long as it can dissolve or disperse the material and does not react with the material. For example, halogen solvents such as chloroform, tetrachloromethane, dichloromethane, 1,2-dichloroethane, or chlorobenzene, ketone solvents such as acetone, methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone, or cyclohexanone, benzene, toluene, or Aromatic solvents such as xylene, ethyl acetate, n-propyl acetate, n-butyl acetate, ethyl propionate, γ-butyrolactone, ester solvents such as diethyl carbonate, ether solvents such as tetrahydrofuran or dioxane, dimethylformamide Alternatively, an amide solvent such as dimethylacetamide, dimethyl sulfoxide, hexane, water, or the like can be used. Moreover, you may mix and use these solvent multiple types. By using the wet method, the utilization efficiency of the material can be increased, and the manufacturing cost can be reduced.

  For example, when 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA) is used, 9- [4- (9-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA) and 2PCAPA are dissolved in toluene. A material layer can be formed using the composition manufactured as described above.

For example, when (acetylacetonato) bis (2,3,5-triphenylpyrazinato) iridium (III) (abbreviation: Ir (tppr) ₂ (acac)) is used as a light-emitting material, bis (2- Methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl ] A material layer can be formed using a composition prepared by dissolving -4,4'-diamine (abbreviation: TPD), Ir (tppr) ₂ (acac) in 2-methoxyethanol.

  Various materials can be used for the light-emitting layer 913. For example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used.

As a phosphorescent compound that can be used for the light-emitting layer 913, for example, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ² ′] iridium (III) tetrakis can be used as a blue light-emitting material. (1-pyrazolyl) borate (abbreviation: FIr6), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ² ′] iridium (III) picolinate (abbreviation: FIrpic), bis [2- ( 3 ′, 5′bistrifluoromethylphenyl) pyridinato-N, C ² ′] iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4 ′, 6′-difluoro) Phenyl) pyridinato-N, C ² ′] iridium (III) acetylacetonate (abbreviation: FIracac) and the like. As a green light-emitting material, tris (2-phenylpyridinato-N, C ² ′) iridium (III) (abbreviation: Ir (ppy) ₃ ), bis (2-phenylpyridinato-N, C ² ′) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), bis (1,2-diphenyl-1H-benzimidazolato) iridium (III) acetylacetonate (abbreviation: Ir (pbi) ) ₂ (acac)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: Ir (bzq) ₂ (acac)), and the like. Further, as yellow light-emitting materials, bis (2,4-diphenyl-1,3-oxazolate-N, C ² ′) iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)), bis [2- (4′-perfluorophenylphenyl) pyridinato] iridium (III) acetylacetonate (abbreviation: Ir (p-PF-ph) ₂ (acac)), bis (2-phenylbenzothiazolate-N, C ² ′) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (acac)) and the like. As an orange light-emitting material, tris (2-phenylquinolinato-N, C ² ′) iridium (III) (abbreviation: Ir (pq) ₃ ), bis (2-phenylquinolinato-N, C ² ′) ) Iridium (III) acetylacetonate (abbreviation: Ir (pq) ₂ (acac)) and the like. As a red light-emitting material, bis [2- (2′-benzo [4,5-α] thienyl) pyridinato-N, C ³ ′] iridium (III) acetylacetonate (abbreviation: Ir (btp) ₂ (Acac)), bis (1-phenylisoquinolinato-N, C ² ') iridium (III) acetylacetonate (abbreviation: Ir (piq) ₂ (acac)), (acetylacetonato) bis [2,3 -Bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) 2 (acac)), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin And organometallic complexes such as platinum (II) (abbreviation: PtOEP). In addition, tris (acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: Tb (acac) ₃ (Phen)), tris (1,3-diphenyl-1,3-propanedionate) (monophenanthroline) europium (III) (abbreviation: Eu (DBM) ₃ (Phen)), tris [1- (2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu ( Since rare earth metal complexes such as TTA) ₃ (Phen)) emit light from rare earth metal ions (electron transition between different multiplicity), they can be used as phosphorescent compounds.

  As a fluorescent compound that can be used for the light-emitting layer 913, for example, N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenyl is used as a blue light-emitting material. And stilbene-4,4′-diamine (abbreviation: YGA2S), 4- (9H-carbazol-9-yl) -4 ′-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), and the like. . As green light-emitting materials, N- (9,10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N- [9,10-bis] (1,1′-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9,10-diphenyl-2-anthryl) -N, N ', N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthryl]- N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis (1,1′-biphenyl-2-yl) -N- [4- (9H-carbazole) 9-yl) phenyl] -N- phenyl-anthracene-2-amine (abbreviation: 2YGABPhA), N, N, 9- triphenylamine anthracene-9-amine (abbreviation: DPhAPhA), and the like. In addition, examples of a yellow light-emitting material include rubrene, 5,12-bis (1,1′-biphenyl-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), and the like. As red light-emitting materials, N, N, N ′, N′-tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,13-diphenyl-N, N , N ′, N′-tetrakis (4-methylphenyl) acenaphtho [1,2-a] fluoranthene-3,10-diamine (abbreviation: p-mPhAFD) and the like.

  Alternatively, the light-emitting layer 913 can have a structure in which a substance having high light-emitting properties (dopant material) is dispersed in another substance (host material). By using a structure in which a substance having high luminescence (dopant material) is dispersed in another substance (host material), crystallization of the light emitting layer can be suppressed. In addition, concentration quenching due to a high concentration of a light-emitting substance can be suppressed.

  As a substance that disperses a highly luminescent substance, when the luminescent substance is a fluorescent compound, the singlet excitation energy (energy difference between the ground state and the singlet excited state) is larger than that of the fluorescent compound. It is preferable to use a substance. In the case where the light-emitting substance is a phosphorescent compound, it is preferable to use a substance having a triplet excitation energy (energy difference between the ground state and the triplet excited state) larger than that of the phosphorescent compound.

  As a host material used for the light-emitting layer 913, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), tris (8-quinolinolato) aluminum (III) (abbreviation) : Alq), 4,4′-bis [N- (9,9-dimethylfluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: DFLDPBi), bis (2-methyl-8-quinolinolato) (4 -Phenylphenolato) Aluminum (III) (abbreviation: BAlq), 4,4'-di (9-carbazolyl) biphenyl (abbreviation: CBP), 2-tert-butyl-9,10-di (2- Naphthyl) anthracene (abbreviation: t-BuDNA), 9- [4- (9-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA), etc. And the like.

  Moreover, as a dopant material, the phosphorescent compound and fluorescent compound which were mentioned above can be used.

  In the case where a structure in which a light-emitting substance (dopant material) is dispersed in another substance (host material) is used as the light-emitting layer 913, a host material and a guest material are used as a material layer over a deposition substrate. A mixed layer may be formed. Alternatively, the material layer over the deposition substrate may have a structure in which a layer containing a host material and a layer containing a dopant material are stacked. By forming the light-emitting layer 913 using the deposition substrate having the material layer having such a structure, the light-emitting layer 913 includes a substance that disperses the light-emitting material (host material), a substance having high light-emitting property (dopant material), and the like. The material (host material) in which the light-emitting material is dispersed is dispersed in a material (dopant material) having high light-emitting properties. Note that as the light-emitting layer 913, two or more kinds of host materials and dopant materials may be used, or two or more kinds of dopant materials and host materials may be used. Two or more types of host materials and two or more types of dopant materials may be used.

  In the case of forming the light-emitting element illustrated in FIG. 17B, each layer of the EL layer 903 (a hole injection layer 911, a hole transport layer 912, an electron transport layer 914, and an electron injection layer 915) is formed. The deposition substrate described in any of Embodiments 1 to 2 including a material layer formed using a material to be formed is prepared for each layer. Then, an EL layer 903 is formed over the first electrode 902 over the substrate 901 by a method described in Embodiments 1 to 2 using a different deposition substrate for each layer. Can do. Then, by forming the second electrode 904 over the EL layer 903, the light-emitting element illustrated in FIG. 17B can be obtained.

For example, as the hole injection layer 911, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used. In addition, the hole injection layer can be formed using a phthalocyanine-based compound such as phthalocyanine (abbreviation: H ₂ Pc) or copper phthalocyanine (abbreviation: CuPc).

  As the hole-injecting layer 911, a layer containing a substance having a high hole-transport property and a substance showing an electron-accepting property can be used. A layer including a substance having a high hole-transport property and a substance having an electron-accepting property has a high carrier density and an excellent hole-injection property. In addition, by using a layer containing a substance having a high hole transporting property and a substance showing an electron accepting property as a hole injection layer in contact with the electrode functioning as the anode, the work function of the electrode material functioning as the anode can be reduced. Regardless, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used.

  The layer containing a substance having a high hole-transport property and a substance having an electron-accepting property includes, for example, a material layer in which a layer containing a substance having a high hole-transport property and a layer containing a substance having an electron-accepting property are stacked. It can be formed by using a deposition substrate.

  As a substance having an electron accepting property used for the hole injection layer 911, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and the like can be used. Can be mentioned. Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

As the substance having a high hole-transport property used for the hole-injection layer 911, various compounds such as an aromatic amine compound, a carbazole derivative, and an aromatic hydrocarbon can be used. Note that the substance having a high hole-transport property used for the hole-injection layer is preferably a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Hereinafter, substances having a high hole-transport property that can be used for the hole-injection layer 911 are specifically listed.

  For example, as an aromatic amine compound that can be used for the hole injection layer 911, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ′, 4 ″ -tris ( N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) or the like can be used. N, N′-bis (4-methylphenyl) (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [N- (4-diphenyl) Aminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), 4,4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N— Phenylamino) biphenyl (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), and the like.

  As a carbazole derivative that can be used for the hole-injection layer 911, specifically, 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1) ), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1) and the like can be given.

  Examples of the carbazole derivative that can be used for the hole-injection layer 911 include 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl). Phenyl] benzene (abbreviation: TCPB), 9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 1,4-bis [4- (N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene and the like can be used.

Examples of aromatic hydrocarbons that can be used for the hole injection layer 911 include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert- Butyl-9,10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) ) Anthracene (abbreviation: t-BuDBA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-) BuAnth), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA), 9,10-bis [2 (1-naphthyl) phenyl] -2-tert-butyl-anthracene, 9,10-bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7-tetramethyl-9,10-di ( 1-naphthyl) anthracene, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9′-bianthryl, 10,10′-diphenyl-9,9′-bianthryl, 10,10′-bis (2-phenylphenyl) -9,9′-bianthryl, 10,10′-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9′-bianthryl , Anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene, and the like. In addition, pentacene, coronene, and the like can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1 × 10 ⁻⁶ cm ² / Vs or more and having 14 to 42 carbon atoms.

  Note that the aromatic hydrocarbon that can be used for the hole-injecting layer 911 may have a vinyl skeleton. As the aromatic hydrocarbon having a vinyl group, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.

  The hole injection layer 911 can be formed by using a film formation substrate having a material layer in which a layer containing a substance having a high hole-transport property and a layer containing an electron-accepting substance are stacked. it can. In the case where a metal oxide is used as the substance exhibiting electron acceptability, it is preferable to form a layer containing a metal oxide after forming a layer containing a substance having a high hole-transport property on the deposition substrate. . This is because a metal oxide often has a higher vapor deposition temperature than a substance having a high hole transporting property. By using the deposition substrate having such a structure, a substance having a high hole transporting property and a metal oxide can be efficiently deposited. In addition, local concentration deviation can be suppressed in the formed film. In addition, there are few types of solvents that dissolve or disperse both the substance having a high hole transporting property and the metal oxide, and it is difficult to form a mixed solution. Therefore, it is difficult to directly form the mixed layer using a wet method. However, by using the film formation method of the present invention, a mixed layer containing a substance having a high hole-transport property and a metal oxide can be easily formed.

  In addition, a layer including a substance having a high hole-transport property and a substance having an electron-accepting property has not only a hole-injection property but also a good hole-transport property. It may be used as a transport layer.

The hole transport layer 912 is a layer containing a substance having a high hole transport property, and examples of the substance having a high hole transport property include 4,4′-bis [N- (1-naphthyl) -N -Phenylamino] biphenyl (abbreviation: NPB or α-NPD) and N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (Abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methyl Phenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: Use aromatic amine compounds such as BSPB) It can be. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

The electron-transport layer 914 is a layer containing a substance having a high electron-transport property. For example, tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ). Bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline A metal complex having a skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) A metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4- tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ01) bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any substance that has a property of transporting more electrons than holes may be used for the electron-transport layer. Further, the electron-transport layer is not limited to a single layer, and two or more layers including the above substances may be stacked.

As the electron injection layer 915, an alkali metal compound such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or the like, or an alkaline earth metal compound can be used. Further, a layer in which a substance having an electron transporting property and an alkali metal or an alkaline earth metal are combined can also be used. For example, Alq containing magnesium (Mg) can be used. Note that it is more preferable to use a layer in which an electron-transporting substance and an alkali metal or an alkaline earth metal are combined as the electron-injecting layer because electron injection from the second electrode 904 occurs efficiently.

  Note that there is no particular limitation on the layered structure of the EL layer 903, and a substance having a high electron-transport property, a substance having a high hole-transport property, a substance having a high electron-injection property, a substance having a high hole-injection property, or a bipolar property A layer including a substance (a substance having a high electron and hole transporting property) and the light-emitting layer may be combined as appropriate.

  Light emission obtained in the EL layer 903 is extracted outside through one or both of the first electrode 902 and the second electrode 904. Accordingly, one or both of the first electrode 902 and the second electrode 904 are light-transmitting electrodes. In the case where only the first electrode 902 is a light-transmitting electrode, light is extracted from the substrate 901 side through the first electrode 902. In the case where only the second electrode 904 is a light-transmitting electrode, light is extracted from the side opposite to the substrate 901 through the second electrode 904. In the case where each of the first electrode 902 and the second electrode 904 is a light-transmitting electrode, light passes through the first electrode 902 and the second electrode 904, and is on the substrate 901 side and the opposite side to the substrate 901. Taken from both.

  Note that although FIG. 17 illustrates the structure in which the first electrode 902 functioning as an anode is provided on the substrate 901 side, the second electrode 904 functioning as a cathode may be provided on the substrate 901 side.

  Further, as a formation method of the EL layer 903, the film formation method described in Embodiment Modes 1 to 2 may be used. In the film formation methods described in Embodiments 1 to 2, since a highly accurate film is efficiently formed, not only the characteristics of the light-emitting element are improved, but also productivity and reduction of manufacturing costs can be achieved. it can.

  In addition, the method for manufacturing a light-emitting device of the present invention does not need to consider the solubility of an already formed layer, unlike the case where an EL layer is directly formed over a deposition target substrate using a wet method. The choice of the kind of material for film formation is expanded. Further, the number of layers to be stacked can be freely set. Therefore, by using the method for manufacturing a light-emitting device of the present invention, a light-emitting device having a desired stacked structure can be manufactured using a desired material. In particular, when the substrate is increased in size, it is important in terms of improving the performance of the light-emitting device that the type of material used and the laminated structure can be freely designed.

  Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 6)
In this embodiment, a light-emitting device formed using the light-emitting element described in Embodiment 5 will be described.

  First, a passive matrix light-emitting device is described with reference to FIGS.

  A light emitting device of a passive matrix type (also referred to as a simple matrix type) is provided so that a plurality of anodes arranged in stripes (bands) and a plurality of cathodes arranged in stripes are orthogonal to each other. The light emitting layer is sandwiched between the intersections. Therefore, the pixel corresponding to the intersection between the selected anode (to which voltage is applied) and the selected cathode is turned on.

  18A is a diagram illustrating a top view of the pixel portion before sealing. FIG. 18B is a cross-sectional view taken along the chain line AA ′ in FIG. FIG. 18C is a cross-sectional view taken along −B ′.

  An insulating layer 1004 is formed over the substrate 1001 as a base insulating layer. Note that the base insulating layer is not particularly required if it is not necessary. On the insulating layer 1004, a plurality of first electrodes 1013 are arranged in stripes at regular intervals. Further, a partition wall 1014 having an opening corresponding to each pixel is provided over the first electrode 1013, and the partition wall 1014 having an opening is formed using an insulating material (photosensitive or non-photosensitive organic material (polyimide, acrylic, Polyamide, polyimide amide, resist or benzocyclobutene), or SOG film (for example, an SiOx film containing an alkyl group)). Note that an opening corresponding to each pixel is a light emitting region 1021.

  A plurality of reverse-tapered partition walls 1022 that are parallel to each other and intersect with the first electrode 1013 are provided over the partition wall 1014 having an opening. The reverse-tapered partition wall 1022 is formed by using a positive photosensitive resin as a pattern in the unexposed portion and adjusting the exposure amount or development time so that the lower portion of the pattern is etched more in accordance with the photolithography method.

  The total height of the partition wall 1014 having an opening and the reverse-tapered partition wall 1022 is set to be larger than the film thickness of the EL layer and the second electrode 1016. Thereby, the EL layer separated into a plurality of regions, specifically, an EL layer (R) (1015R) formed of a material that emits red light, and an EL layer (G) (G) (formed of a material that emits green light) ( 1015G), an EL layer (B) (1015B) formed of a material that emits blue light, and a second electrode 1016 are formed. Note that the plurality of regions separated from each other are electrically independent.

  The second electrode 1016 is a stripe-shaped electrode extending in a direction intersecting with the first electrode 1013 and parallel to each other. Note that a part of the conductive layer that forms the EL layer and the second electrode 1016 is also formed over the reverse-tapered partition wall 1022; however, the EL layer (R) (1015R) and the EL layer (G) (1015G) The EL layer (B) (1015B) and the second electrode 1016 are separated from each other. Note that the EL layer in this embodiment includes at least a light-emitting layer, and may include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, or the like in addition to the light-emitting layer. Good.

  Here, an EL layer (R) (1015R), an EL layer (G) (1015G), and an EL layer (B) (1015B) are selectively formed, and three types (red (R), blue (G), green An example of forming a light emitting device capable of full color display capable of obtaining the light emission of (B)) is shown. Note that the EL layers (R) (1015R), the EL layers (G) (1015G), and the EL layers (B) (1015B) are formed in stripe patterns parallel to each other. In order to form these EL layers, the film formation method described in any of Embodiments 1 and 2 may be applied.

  If necessary, sealing is performed using a sealing material such as a sealing can or a glass substrate for sealing. Here, a glass substrate is used as the sealing substrate, and the substrate and the sealing substrate are bonded together using an adhesive such as a sealing material, and the space surrounded by the adhesive such as the sealing material is hermetically sealed. The sealed space is filled with a filler or a dry inert gas. In order to improve the reliability of the light emitting device, a desiccant or the like may be enclosed between the substrate and the sealing material. A very small amount of water is removed by the desiccant, and it is sufficiently dried. In addition, as the desiccant, a substance that absorbs moisture by chemical adsorption, such as an oxide of an alkaline earth metal such as calcium oxide or barium oxide, can be used. In addition, you may use the substance which adsorb | sucks moisture by physical adsorption, such as a zeolite and a silica gel, as another drying material.

  However, in the case where a sealing material that covers and contacts the light emitting element is provided and is sufficiently shielded from the outside air, the drying material is not necessarily provided.

  Next, FIG. 19 shows a top view when an FPC or the like is mounted on the passive matrix light-emitting device shown in FIG.

  In FIG. 19, the pixel portions constituting the image display intersect so that the scanning line group and the data line group are orthogonal to each other.

  Here, the first electrode 1013 in FIG. 18 corresponds to the scanning line 1103 in FIG. 19, the second electrode 1016 in FIG. 18 corresponds to the data line 1102 in FIG. This corresponds to the partition wall 1104. An EL layer is sandwiched between the data line 1102 and the scanning line 1103, and an intersection indicated by a region 1105 corresponds to one pixel.

  Note that the scanning line 1103 is electrically connected to the connection wiring 1108 at a wiring end, and the connection wiring 1108 is connected to the FPC 1109 b through the input terminal 1107. The data line is connected to the FPC 1109a via the input terminal 1106.

  Further, if necessary, an optical film such as a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, etc. is appropriately provided on the exit surface. Also good. Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection.

  Note that FIG. 19 illustrates an example in which the driver circuit is not provided over the substrate; however, the present invention is not particularly limited, and an IC chip having the driver circuit may be mounted over the substrate.

  When an IC chip is mounted, a data line side IC and a scanning line side IC in which a driving circuit for transmitting each signal to the pixel portion is formed in a peripheral (outside) region of the pixel portion by a COG method. . You may mount using TCP and a wire bonding system as mounting techniques other than a COG system. TCP is an IC mounted on a TAB tape, and the IC is mounted by connecting the TAB tape to a wiring on an element formation substrate. The data line side IC and the scanning line side IC may be those using a silicon substrate, or may be a glass substrate, a quartz substrate, or a plastic substrate formed with a drive circuit using TFTs. Further, although an example in which one IC is provided on one side has been described, it may be divided into a plurality of parts on one side.

  Next, an example of an active matrix light-emitting device is described with reference to FIGS. 20A is a top view illustrating the light-emitting device, and FIG. 20B is a cross-sectional view taken along the chain line A-A ′ in FIG. 20A. An active matrix light-emitting device according to this embodiment includes a pixel portion 1202 provided over an element substrate 1210, a driver circuit portion (source side driver circuit) 1201, a driver circuit portion (gate side driver circuit) 1203, and the like. Have. The pixel portion 1202, the driver circuit portion 1201, and the driver circuit portion 1203 are sealed between the element substrate 1210 and the sealing substrate 1204 with a sealant 1205.

  Over the element substrate 1210, an external input terminal that transmits a signal (eg, a video signal, a clock signal, a start signal, or a reset signal) and a potential from the outside to the driver circuit portion 1201 and the driver circuit portion 1203 is provided. A lead wiring 1208 for connection is provided. In this example, an FPC (flexible printed circuit) 1209 is provided as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

  Next, a cross-sectional structure will be described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 1210. Here, a driver circuit portion 1201 which is a source side driver circuit and a pixel portion 1202 are shown.

  The driver circuit portion 1201 shows an example in which a CMOS circuit in which an n-channel TFT 1223 and a p-channel TFT 1224 are combined is formed. Note that the circuit forming the driver circuit portion may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment mode, a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not necessarily required, and the driver circuit can be formed outside the substrate.

  The pixel portion 1202 is formed by a plurality of pixels including a switching TFT 1211 and a first electrode 1213 electrically connected to a wiring (source electrode or drain electrode) of the current control TFT 1212 and the current control TFT 1212. The Note that an insulator 1214 is formed so as to cover an end portion of the first electrode 1213. Here, it is formed by using a positive photosensitive acrylic resin.

  In addition, in order to improve the coverage of the film formed to be stacked on the upper layer, it is preferable that a curved surface having a curvature be formed at the upper end portion or the lower end portion of the insulator 1214. For example, in the case where a positive photosensitive acrylic resin is used as the material of the insulator 1214, it is preferable that the upper end portion of the insulator 1214 has a curved surface having a curvature radius (0.2 μm to 3 μm). As the insulator 1214, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used. For example, both silicon oxide and silicon oxynitride can be used.

  An EL layer 1200 and a second electrode 1216 are stacked over the first electrode 1213. Note that the first electrode 1213 is an ITO film, and a wiring film of a current control TFT 1212 connected to the first electrode 1213 is a laminated film of a titanium nitride film and a film containing aluminum as a main component, or a titanium nitride film and aluminum. When a laminated film including a main component film and a titanium nitride film is applied, the resistance as a wiring is low and good ohmic contact with the ITO film can be obtained. Although not shown here, the second electrode 1216 is electrically connected to an FPC 1209 which is an external input terminal.

  The EL layer 1200 includes at least a light-emitting layer, and includes a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer as appropriate in addition to the light-emitting layer. A light-emitting element 1215 is formed with a stacked structure of the first electrode 1213, the EL layer 1200, and the second electrode 1216.

  In the cross-sectional view illustrated in FIG. 20B, only one light-emitting element 1215 is illustrated; however, in the pixel portion 1202, a plurality of light-emitting elements are arranged in a matrix. In the pixel portion 1202, light emitting elements capable of emitting three types (R, G, and B) of light emission can be selectively formed, so that a light emitting device capable of full color display can be formed. Alternatively, a light emitting device capable of full color display may be obtained by combining with a color filter.

  Further, the sealing substrate 1204 is bonded to the element substrate 1210 with the sealant 1205, whereby the light-emitting element 1215 is provided in the space 1207 surrounded by the element substrate 1210, the sealing substrate 1204, and the sealant 1205. Yes. Note that the space 1207 includes a structure filled with a sealant 1205 in addition to a case where the space is filled with an inert gas (nitrogen, argon, or the like).

  Note that an epoxy-based resin is preferably used for the sealant 1205. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used as a material for the sealing substrate 1204.

  As described above, a light-emitting device can be obtained by applying the present invention. An active matrix light-emitting device is likely to increase the manufacturing cost per sheet because a TFT is manufactured. However, by applying the present invention, a material loss when forming a light-emitting element can be greatly reduced. Is possible. Therefore, the manufacturing cost can be reduced.

  In addition, by applying the present invention, an EL layer included in a light-emitting element can be easily formed, and a light-emitting device including the light-emitting element can be easily manufactured. In addition, since a flat and uniform film can be formed and a fine pattern can be formed, a high-definition light-emitting device can be obtained.

  In addition, the method for manufacturing a light-emitting device of the present invention does not need to consider the solubility of an already formed layer, unlike the case where an EL layer is directly formed over a deposition target substrate using a wet method. The choice of the kind of material for film formation is expanded. Further, the number of layers to be stacked can be freely set. Therefore, by using the method for manufacturing a light-emitting device of the present invention, a light-emitting device having a desired stacked structure can be manufactured using a desired material. In particular, when the substrate is increased in size, it is important in terms of improving the performance of the light-emitting device that the type of material used and the laminated structure can be freely designed.

  Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 7)
In this embodiment mode, various electronic devices completed using a light-emitting device manufactured by applying the present invention will be described with reference to FIGS.

  As an electronic device to which the light emitting device according to the present invention is applied, a television, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook computer, Reproducing a recording medium such as a game machine, a portable information terminal (mobile computer, cellular phone, portable game machine or electronic book), an image reproducing device (specifically, a digital video disc (DVD)), A device provided with a display device capable of displaying the image), and a lighting fixture. Specific examples of these electronic devices are shown in FIGS.

  FIG. 21A illustrates a display device, which includes a housing 8001, a support base 8002, a display portion 8003, speaker portions 8004, a video input terminal 8005, and the like. It is manufactured using a light-emitting device formed using the present invention for the display portion 8003. The display device includes all information display devices such as a computer, a TV broadcast receiver, and an advertisement display. By applying the present invention, it is possible to improve the material utilization efficiency and the production efficiency mainly in the film forming process of the light emitting device, so that the production cost and the productivity in the production of the display device can be reduced. Thus, an inexpensive display device can be provided.

  FIG. 21B illustrates a computer, which includes a main body 8101, a housing 8102, a display portion 8103, a keyboard 8104, an external connection port 8105, a pointing device 8106, and the like. Note that the computer is manufactured by using a light-emitting device formed using the present invention for the display portion 8103. By applying the present invention, it is possible to improve the material utilization efficiency and the manufacturing efficiency mainly in the film forming process of the light-emitting device, thereby reducing the manufacturing cost and improving the productivity in the computer manufacturing. And an inexpensive computer can be provided.

  FIG. 21C illustrates a video camera, which includes a main body 8201, a display portion 8202, a housing 8203, an external connection port 8204, a remote control receiving portion 8205, an image receiving portion 8206, a battery 8207, an audio input portion 8208, operation keys 8209, and an eyepiece. Part 8210 and the like. Note that the video camera is manufactured using a light-emitting device formed using the present invention for the display portion 8202. By applying the present invention, it is possible to improve the material utilization efficiency and the production efficiency mainly in the film forming process of the light emitting device, so that the production cost in the production of the video camera is reduced and the productivity is improved. Therefore, an inexpensive video camera can be provided.

  FIG. 21D illustrates a table lamp, which includes a lighting portion 8301, an umbrella 8302, a variable arm 8303, a column 8304, a base 8305, and a power source 8306. Note that the desk lamp is manufactured by using a light-emitting device formed using the present invention for the lighting portion 8301. The lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture. By applying the present invention, it is possible to improve the material utilization efficiency and the production efficiency mainly in the film forming process of the light emitting device, so that the production cost is reduced and the productivity is improved in the production of the table lamp. Therefore, an inexpensive desk lamp can be provided.

  Here, FIG. 21E illustrates a mobile phone, which includes a main body 8401, a housing 8402, a display portion 8403, an audio input portion 8404, an audio output portion 8405, operation keys 8406, an external connection port 8407, an antenna 8408, and the like. Note that the cellular phone is manufactured using the light-emitting device formed using the present invention for the display portion 8403. By applying the present invention, it is possible to improve the material utilization efficiency and the production efficiency mainly in the film forming process of the light emitting device, thereby reducing the manufacturing cost and improving the productivity in the production of the mobile phone. Therefore, an inexpensive mobile phone can be provided.

  22A is also a mobile phone, FIG. 22A is a front view, FIG. 22B is a rear view, and FIG. 22C is a development view. The main body 1401 is a so-called smartphone that has both functions of a telephone and a portable information terminal, has a built-in computer, and can perform various data processing in addition to voice calls.

  The main body 1401 includes two housings, a housing 1402 and a housing 1403. The housing 1402 includes a display portion 1404, a speaker 1405, a microphone 1406, operation keys 1407, a pointing device 1408, a camera lens 1409, an external connection terminal 1410, an earphone terminal 1411, and the like. The housing 1403 includes a keyboard 1412, An external memory slot 1413, a camera lens 1414, a light 1415, and the like are provided. An antenna is incorporated in the housing 1402.

  In addition to the above structure, a non-contact IC chip, a small recording device, or the like may be incorporated.

  The display device 1404 can incorporate the display device described in the above embodiment, and the display direction can be appropriately changed depending on the usage pattern. Since the camera lens 1409 is provided on the same surface as the display portion 1404, a videophone can be used. Further, the display unit 1404 can be used as a viewfinder, and still images and moving images can be taken with the camera lens 1414 and the light 1415. The speaker 1405 and the microphone 1406 can be used for videophone calls, recording, playing, and the like without being limited to voice calls.

  With the operation key 1407, making and receiving calls, inputting simple information such as e-mail, scrolling the screen, moving the cursor, and the like are possible. Further, the housings 1402 and 1403 (FIG. 22A) which overlap with each other slide and can be developed as illustrated in FIG. 22C, so that the portable information terminal can be used. In this case, smooth operation can be performed using the keyboard 1412 and the pointing device 1408. The external connection terminal 1410 can be connected to an AC adapter and various types of cables such as a USB cable, and charging and data communication with a computer or the like are possible. Further, a recording medium can be inserted into the external memory slot 1413 to cope with storing and moving a larger amount of data.

In addition to the above functions, an infrared communication function, a television reception function, or the like may be provided.

  Note that the above-described mobile phone is manufactured by using a light-emitting device formed using the present invention for the display portion 1404. By applying the present invention, it is possible to improve the material utilization efficiency and the production efficiency mainly in the film forming process of the light emitting device, thereby reducing the manufacturing cost and improving the productivity in the production of the mobile phone. Therefore, an inexpensive mobile phone can be provided.

  As described above, an electronic device or a lighting fixture can be obtained by using the light-emitting device according to the present invention. The applicable range of the light-emitting device according to the present invention is so wide that the light-emitting device can be applied to electronic devices in various fields.

  Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

101 First substrate 102 Reflective layer 103 Heat insulation layer 104 Light absorption layer 105 Material layer 106 Opening 107 Second substrate 108 First electrode 109 Insulator 110 Light 111 EL layer 112 Second heat insulation layer 211 Hole injection layer 212 Hole transport layer 213A Light emission layer 213B Light emission layer 213C Light emission layer 214 Electron transport layer 215 Electron injection layer 401 Reflection layer 402 Opening 411 EL layer (R)
412 EL layer (G)
413 EL layer (B)
414 Insulator 501 Reflective layer 502 Opening 511 EL layer (R)
512 EL layer (G)
513 EL layer (B)
800 Second substrate 801 First substrate 803 Laser oscillation device 804 First optical system 805 Second optical system 806 Third optical system 807 Reflective mirror 808 Image sensor 809 Substrate stage 814 Opening 815 Material layer 816 Control device 901 Substrate 902 First electrode 903 EL layer 904 Second electrode 911 Hole injection layer 912 Hole transport layer 913 Light emitting layer 914 Electron transport layer 915 Electron injection layer 1001 Substrate 1004 Insulating layer 1013 First electrode 1014 Partition 1015 EL Layer 1016 Second electrode 1021 Light emitting region 1022 Partition 1102 Data line 1103 Scanning line 1104 Partition 1105 Region 1106 Input terminal 1107 Input terminal 1108 Connection wiring 1200 EL layer 1201 Driver circuit portion (source side driver circuit)
1202 Pixel portion 1203 Drive circuit portion (gate side drive circuit)
1204 Sealing substrate 1205 Sealing material 1207 Space 1208 Wiring 1209 FPC (flexible printed circuit)
1210 Element substrate 1211 Switching TFT
1212 Current control TFT
1213 1st electrode 1214 Insulator 1215 Light emitting element 1216 2nd electrode 1223 n-channel TFT
1224 p-channel TFT
1401 Main body 1402 Case 1403 Case 1404 Display unit 1405 Speaker 1406 Microphone 1407 Operation key 1408 Pointing device 1409 Camera lens 1410 External connection terminal 1411 Earphone terminal 1412 Keyboard 1413 External memory slot 1414 Camera lens 1415 Light 1501 Substrate 1502 Reflective layer 1503 Heat insulation layer 1504 Light absorption layer 1505 Material layer 1506 Opening portion 1511 Substrate 1512 Reflection layer 1514 Light absorption layer 1515 Material layer 1516 Opening portion 2101 Glass substrate 2102 Reflection layer 2103 Heat insulation layer 2104 Light absorption layer 2105 Material layer 2106 Opening portion 2112 Second Heat insulation layer 2114 Undercoat film 3101 Glass substrate 3102 Reflective layer 3103 Heat insulation layer 3104 Light absorption layer 3105 Material layer 3106 Opening 3114 Base film 4101 Glass substrate 4102 Reflective layer 4104 Light absorption layer 8001 Case 8002 Support base 8003 Display portion 8004 Speaker portion 8005 Video input terminal 8101 Body 8102 Case 8103 Display portion 8104 Keyboard 8105 External connection port 8106 Pointing device 8201 Body 8202 Display unit 8203 Housing 8204 External connection port 8205 Remote control receiving unit 8206 Image receiving unit 8207 Battery 8208 Audio input unit 8209 Operation key 8210 Eyepiece unit 8301 Illuminating unit 8302 Umbrella 8303 Variable arm 8304 Support column 8305 Power supply 8401 Main body 8402 Body 8403 Display unit 8404 Audio input unit 8405 Audio output unit 8406 Operation key 8407 External connection port 8408 Antenna

Claims (6)

Preparing a first deposition substrate and an element substrate having a first electrode;
The first film-formation substrate has a light-transmitting property and is provided on one surface with a reflection layer having an opening, a light absorption layer, and the reflection layer and the light absorption layer. A first heat insulating layer, a material layer formed on the light absorbing layer by a wet method, and a second heat insulating layer provided between the light absorbing layer and the material layer. And
The first heat insulating layer has a region overlapping with the reflective layer,
The second heat insulating layer has a region overlapping with the first heat insulating layer,
The surface on which the first electrode of the element substrate is formed and the surface on which the material layer of the first film formation substrate is formed are arranged to face each other.
The first deposition substrate prior SL materials layer is formed which do not side from the frequency 10MHz above, irradiated with a following laser pulse width 100fs over 10 ns, the material layer in contact with the light absorbing layer Heating and forming at least a part of the material layer on the first electrode of the element substrate,
The first film formation substrate is replaced with a second film formation substrate on which another material layer is formed, and a plurality of layers are formed on at least the first electrode by repeating the process. A method for manufacturing a light-emitting device. In claim 1,
The transmittance of the first heat insulating layer with respect to the laser light is 60% or more, and the heat conductivity of the material used for the first heat insulating layer is the heat conductivity of the material used for the reflective layer and the light absorbing layer. A manufacturing method of a light-emitting device, which is smaller than the rate. In claim 1,
The method for manufacturing a light-emitting device, wherein the first heat insulating layer includes any of titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, and silicon carbide. In any one of Claim 1 thru | or 3,
The method for manufacturing a light-emitting device, wherein the reflective layer includes any one of aluminum, silver, gold, platinum, copper, an alloy containing aluminum, an alloy containing silver, or indium oxide-tin oxide. In any one of Claims 1 thru | or 4,
The method for manufacturing a light-emitting device, wherein the light absorption layer includes any one of metal nitride, metal, and carbon. A reflective layer having a first opening on a light-transmitting substrate;
A first heat insulating layer having a second opening on the reflective layer;
A light absorption layer on the substrate and the first heat insulation layer;
A second heat insulating layer having a third opening on the light absorbing layer;
A material layer on the light absorption layer and the second heat insulation layer;
A film formation substrate comprising a region where the first opening, the second opening, and the third opening overlap.

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