JP2008053698A5

JP2008053698A5 -

Info

Publication number: JP2008053698A5
Application number: JP2007187768A
Authority: JP
Filing date: 2007-07-19
Publication date: 2010-07-22
Anticipated expiration: 2027-07-19

Claims

Forming a light absorption layer on one surface of the substrate having translucency;
A substrate is provided so as to face the light absorption layer, a mask is provided so as to face the other surface of the light-transmitting substrate,
Irradiating the light absorption layer with a laser beam through the mask, transferring a part of the light absorption layer to the substrate ,
The method for manufacturing a semiconductor device, wherein the mask is a phase shift mask, a binary mask and a phase shift mask overlapped, or has a microlens .

Forming a light absorption layer on one surface of the substrate having translucency;
Forming a mask on the other surface of the light-transmitting substrate;
Irradiating the light absorption layer with a laser beam from the other surface side of the light-transmitting substrate, transferring a part of the light absorption layer to the substrate,
The method for manufacturing a semiconductor device, wherein the mask is a phase shift mask, a binary mask and a phase shift mask overlapped, or has a microlens .

3. The method for manufacturing a semiconductor device according to claim 1, wherein the light absorption layer absorbs the laser beam.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the light absorption layer is a conductive layer, a semiconductor layer, or an insulating layer.

Forming a first layer that absorbs light on one surface of a light-transmitting substrate and a second layer in contact with the first layer;
A substrate is provided so as to face the second layer, and a mask is provided so as to face the other surface of the light-transmitting substrate;
Irradiating the first layer that absorbs the light through the mask with a laser beam, transferring a part of the second layer to the substrate ,
The method for manufacturing a semiconductor device, wherein the mask is a phase shift mask, a binary mask and a phase shift mask overlapped, or has a microlens .

Forming a first layer that absorbs light on one surface of a light-transmitting substrate and a second layer in contact with the first layer;
Forming a mask on the other surface of the light-transmitting substrate;
A substrate is provided to face the second layer;
Irradiating the first layer that absorbs the light from the other surface side of the light-transmitting substrate with a laser beam, and transferring a part of the second layer to the substrate ;
The method for manufacturing a semiconductor device, wherein the mask is a phase shift mask, a binary mask and a phase shift mask overlapped, or has a microlens .

Forming a first layer that absorbs light on one surface of a light-transmitting substrate and a second layer in contact with the first layer;
A substrate is provided so as to face the second layer, and a mask is provided so as to face the other surface of the light-transmitting substrate;
Irradiating the first layer that absorbs the light through the mask with a laser beam, transferring a part of the first layer and a part of the second layer to the substrate ;
The method for manufacturing a semiconductor device, wherein the mask is a phase shift mask, a binary mask and a phase shift mask overlapped, or has a microlens .

Forming a first layer that absorbs light on one surface of a light-transmitting substrate and a second layer in contact with the first layer;
Forming a mask on the other surface of the light-transmitting substrate;
A substrate is provided to face the second layer;
The first layer that absorbs the light is irradiated with a laser beam from the other surface side of the light-transmitting substrate, and a part of the first layer and a part of the second layer are transferred to the substrate. And
The method for manufacturing a semiconductor device, wherein the mask is a phase shift mask, a binary mask and a phase shift mask overlapped, or has a microlens .

9. The method for manufacturing a semiconductor device according to claim 5, wherein the first layer that absorbs light absorbs the laser beam.

10. The method for manufacturing a semiconductor device according to claim 5, wherein the first layer that absorbs light is a conductive layer, a semiconductor layer, or an insulating layer.

11. The method for manufacturing a semiconductor device according to claim 5, wherein the second layer is one or more of a conductive layer, a semiconductor layer, and an insulating layer.

12. The method for manufacturing a semiconductor device according to claim 1, further comprising a light-blocking layer around the microlens.

In any one of claims 1 to 12, a method for manufacturing a semiconductor device substrate and the substrate having the light-transmitting and placed in a vacuum atmosphere, and then irradiating the laser beam to the light absorbing layer .

In any one of claims 1 to 13, a method for manufacturing a semiconductor device, which comprises heating the substrate.