JP5313866B2 - 金属の除去速度を制御するためのハロゲン化物アニオン - Google Patents

金属の除去速度を制御するためのハロゲン化物アニオン Download PDF

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JP5313866B2
JP5313866B2 JP2009501475A JP2009501475A JP5313866B2 JP 5313866 B2 JP5313866 B2 JP 5313866B2 JP 2009501475 A JP2009501475 A JP 2009501475A JP 2009501475 A JP2009501475 A JP 2009501475A JP 5313866 B2 JP5313866 B2 JP 5313866B2
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bromide
chloride
polishing
substrate
chemical mechanical
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Japanese (ja)
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JP2009530853A (ja
JP2009530853A5 (https=
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リ，ショウチャン
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キャボット マイクロエレクトロニクス コーポレイション
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
JP2009501475A 2006-03-23 2007-03-16 金属の除去速度を制御するためのハロゲン化物アニオン Expired - Fee Related JP5313866B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,085 2006-03-23
US11/388,085 US7820067B2 (en) 2006-03-23 2006-03-23 Halide anions for metal removal rate control
PCT/US2007/006709 WO2007111855A2 (en) 2006-03-23 2007-03-16 Halide anions for metal removal rate control

Publications (3)

Publication Number Publication Date
JP2009530853A JP2009530853A (ja) 2009-08-27
JP2009530853A5 JP2009530853A5 (https=) 2010-05-06
JP5313866B2 true JP5313866B2 (ja) 2013-10-09

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ID=38450247

Family Applications (1)

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JP2009501475A Expired - Fee Related JP5313866B2 (ja) 2006-03-23 2007-03-16 金属の除去速度を制御するためのハロゲン化物アニオン

Country Status (9)

Country Link
US (1) US7820067B2 (https=)
EP (1) EP1996664B1 (https=)
JP (1) JP5313866B2 (https=)
KR (1) KR101364318B1 (https=)
CN (1) CN101389724B (https=)
IL (1) IL192550A0 (https=)
MY (1) MY145564A (https=)
TW (1) TWI343406B (https=)
WO (1) WO2007111855A2 (https=)

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US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8226840B2 (en) * 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
CN113439326B (zh) * 2019-02-13 2025-02-25 株式会社德山 含有次氯酸根离子和pH缓冲剂的半导体晶圆的处理液
CN110052909B (zh) * 2019-03-25 2020-08-04 东阳市恒业钢带有限公司 一种钢带无尘环保型抛光装置
CN114180831B (zh) * 2021-12-29 2024-04-02 中国建筑材料科学研究总院有限公司 一种可光刻玻璃及其微结构加工方法

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Also Published As

Publication number Publication date
US20070224822A1 (en) 2007-09-27
JP2009530853A (ja) 2009-08-27
WO2007111855A3 (en) 2007-11-15
IL192550A0 (en) 2009-02-11
EP1996664B1 (en) 2012-12-05
MY145564A (en) 2012-02-29
CN101389724B (zh) 2012-05-23
KR20080108562A (ko) 2008-12-15
CN101389724A (zh) 2009-03-18
US7820067B2 (en) 2010-10-26
KR101364318B1 (ko) 2014-02-18
WO2007111855A2 (en) 2007-10-04
EP1996664A2 (en) 2008-12-03
TWI343406B (en) 2011-06-11
TW200804548A (en) 2008-01-16

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