KR101364318B1 - 금속 제거 속도 조절을 위한 할라이드 음이온 - Google Patents

금속 제거 속도 조절을 위한 할라이드 음이온 Download PDF

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Publication number
KR101364318B1
KR101364318B1 KR1020087025806A KR20087025806A KR101364318B1 KR 101364318 B1 KR101364318 B1 KR 101364318B1 KR 1020087025806 A KR1020087025806 A KR 1020087025806A KR 20087025806 A KR20087025806 A KR 20087025806A KR 101364318 B1 KR101364318 B1 KR 101364318B1
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South Korea
Prior art keywords
bromide
chloride
polishing
delete delete
substrate
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KR1020087025806A
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Korean (ko)
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KR20080108562A (ko
Inventor
쇼우티안 리
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캐보트 마이크로일렉트로닉스 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
KR1020087025806A 2006-03-23 2007-03-16 금속 제거 속도 조절을 위한 할라이드 음이온 Expired - Fee Related KR101364318B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,085 2006-03-23
US11/388,085 US7820067B2 (en) 2006-03-23 2006-03-23 Halide anions for metal removal rate control
PCT/US2007/006709 WO2007111855A2 (en) 2006-03-23 2007-03-16 Halide anions for metal removal rate control

Publications (2)

Publication Number Publication Date
KR20080108562A KR20080108562A (ko) 2008-12-15
KR101364318B1 true KR101364318B1 (ko) 2014-02-18

Family

ID=38450247

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087025806A Expired - Fee Related KR101364318B1 (ko) 2006-03-23 2007-03-16 금속 제거 속도 조절을 위한 할라이드 음이온

Country Status (9)

Country Link
US (1) US7820067B2 (https=)
EP (1) EP1996664B1 (https=)
JP (1) JP5313866B2 (https=)
KR (1) KR101364318B1 (https=)
CN (1) CN101389724B (https=)
IL (1) IL192550A0 (https=)
MY (1) MY145564A (https=)
TW (1) TWI343406B (https=)
WO (1) WO2007111855A2 (https=)

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WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8226840B2 (en) * 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
CN113439326B (zh) * 2019-02-13 2025-02-25 株式会社德山 含有次氯酸根离子和pH缓冲剂的半导体晶圆的处理液
CN110052909B (zh) * 2019-03-25 2020-08-04 东阳市恒业钢带有限公司 一种钢带无尘环保型抛光装置
CN114180831B (zh) * 2021-12-29 2024-04-02 中国建筑材料科学研究总院有限公司 一种可光刻玻璃及其微结构加工方法

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US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
WO2002033014A1 (en) * 2000-10-17 2002-04-25 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia and/or halide-containing composition
JP2005518669A (ja) * 2002-02-22 2005-06-23 ユニバーシティ オブ フロリダ 銅または銀の膜を研磨するための改良された化学機械的研磨スラリー

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US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
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US6294027B1 (en) * 1997-10-21 2001-09-25 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6435947B2 (en) * 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
JP2002528903A (ja) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
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JP4264781B2 (ja) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
KR100444239B1 (ko) * 1999-11-22 2004-08-11 제이에스알 가부시끼가이샤 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
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US6783432B2 (en) * 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6719920B2 (en) * 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
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US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
WO2002033014A1 (en) * 2000-10-17 2002-04-25 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia and/or halide-containing composition
JP2005518669A (ja) * 2002-02-22 2005-06-23 ユニバーシティ オブ フロリダ 銅または銀の膜を研磨するための改良された化学機械的研磨スラリー

Also Published As

Publication number Publication date
US20070224822A1 (en) 2007-09-27
JP2009530853A (ja) 2009-08-27
WO2007111855A3 (en) 2007-11-15
IL192550A0 (en) 2009-02-11
EP1996664B1 (en) 2012-12-05
MY145564A (en) 2012-02-29
CN101389724B (zh) 2012-05-23
KR20080108562A (ko) 2008-12-15
CN101389724A (zh) 2009-03-18
US7820067B2 (en) 2010-10-26
WO2007111855A2 (en) 2007-10-04
EP1996664A2 (en) 2008-12-03
TWI343406B (en) 2011-06-11
JP5313866B2 (ja) 2013-10-09
TW200804548A (en) 2008-01-16

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