MY145564A - Halide anions for metal removal rate control - Google Patents

Halide anions for metal removal rate control

Info

Publication number
MY145564A
MY145564A MYPI20083709A MYPI20083709A MY145564A MY 145564 A MY145564 A MY 145564A MY PI20083709 A MYPI20083709 A MY PI20083709A MY PI20083709 A MYPI20083709 A MY PI20083709A MY 145564 A MY145564 A MY 145564A
Authority
MY
Malaysia
Prior art keywords
rate control
removal rate
metal removal
halide anions
polishing
Prior art date
Application number
MYPI20083709A
Other languages
English (en)
Inventor
Shoutian Li
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY145564A publication Critical patent/MY145564A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
MYPI20083709A 2006-03-23 2008-09-19 Halide anions for metal removal rate control MY145564A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/388,085 US7820067B2 (en) 2006-03-23 2006-03-23 Halide anions for metal removal rate control

Publications (1)

Publication Number Publication Date
MY145564A true MY145564A (en) 2012-02-29

Family

ID=38450247

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20083709A MY145564A (en) 2006-03-23 2008-09-19 Halide anions for metal removal rate control

Country Status (9)

Country Link
US (1) US7820067B2 (https=)
EP (1) EP1996664B1 (https=)
JP (1) JP5313866B2 (https=)
KR (1) KR101364318B1 (https=)
CN (1) CN101389724B (https=)
IL (1) IL192550A0 (https=)
MY (1) MY145564A (https=)
TW (1) TWI343406B (https=)
WO (1) WO2007111855A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8226840B2 (en) * 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
CN113439326B (zh) * 2019-02-13 2025-02-25 株式会社德山 含有次氯酸根离子和pH缓冲剂的半导体晶圆的处理液
CN110052909B (zh) * 2019-03-25 2020-08-04 东阳市恒业钢带有限公司 一种钢带无尘环保型抛光装置
CN114180831B (zh) * 2021-12-29 2024-04-02 中国建筑材料科学研究总院有限公司 一种可光刻玻璃及其微结构加工方法

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US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
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DE69734868T2 (de) * 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
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TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
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KR100444239B1 (ko) * 1999-11-22 2004-08-11 제이에스알 가부시끼가이샤 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법
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US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
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US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
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Also Published As

Publication number Publication date
US20070224822A1 (en) 2007-09-27
JP2009530853A (ja) 2009-08-27
WO2007111855A3 (en) 2007-11-15
IL192550A0 (en) 2009-02-11
EP1996664B1 (en) 2012-12-05
CN101389724B (zh) 2012-05-23
KR20080108562A (ko) 2008-12-15
CN101389724A (zh) 2009-03-18
US7820067B2 (en) 2010-10-26
KR101364318B1 (ko) 2014-02-18
WO2007111855A2 (en) 2007-10-04
EP1996664A2 (en) 2008-12-03
TWI343406B (en) 2011-06-11
JP5313866B2 (ja) 2013-10-09
TW200804548A (en) 2008-01-16

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