|
US5196353A
(en)
|
1992-01-03 |
1993-03-23 |
Micron Technology, Inc. |
Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
|
|
US6614529B1
(en)
|
1992-12-28 |
2003-09-02 |
Applied Materials, Inc. |
In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
|
|
US5658183A
(en)
|
1993-08-25 |
1997-08-19 |
Micron Technology, Inc. |
System for real-time control of semiconductor wafer polishing including optical monitoring
|
|
US5433651A
(en)
|
1993-12-22 |
1995-07-18 |
International Business Machines Corporation |
In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
|
|
JP3270282B2
(ja)
|
1994-02-21 |
2002-04-02 |
株式会社東芝 |
半導体製造装置及び半導体装置の製造方法
|
|
JP3313505B2
(ja)
|
1994-04-14 |
2002-08-12 |
株式会社日立製作所 |
研磨加工法
|
|
US5893796A
(en)
|
1995-03-28 |
1999-04-13 |
Applied Materials, Inc. |
Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
|
|
US5964643A
(en)
|
1995-03-28 |
1999-10-12 |
Applied Materials, Inc. |
Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
|
|
US5838447A
(en)
|
1995-07-20 |
1998-11-17 |
Ebara Corporation |
Polishing apparatus including thickness or flatness detector
|
|
EP0852615B1
(en)
|
1996-07-25 |
2005-12-14 |
DuPont Air Products NanoMaterials L.L.C. |
Chemical mechanical polishing composition and process
|
|
US5872633A
(en)
|
1996-07-26 |
1999-02-16 |
Speedfam Corporation |
Methods and apparatus for detecting removal of thin film layers during planarization
|
|
US6039891A
(en)
|
1996-09-24 |
2000-03-21 |
Cabot Corporation |
Multi-oxidizer precursor for chemical mechanical polishing
|
|
US5958288A
(en)
*
|
1996-11-26 |
1999-09-28 |
Cabot Corporation |
Composition and slurry useful for metal CMP
|
|
US6294027B1
(en)
|
1997-10-21 |
2001-09-25 |
Lam Research Corporation |
Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
|
|
US6177026B1
(en)
|
1998-05-26 |
2001-01-23 |
Cabot Microelectronics Corporation |
CMP slurry containing a solid catalyst
|
|
US6435947B2
(en)
|
1998-05-26 |
2002-08-20 |
Cabot Microelectronics Corporation |
CMP polishing pad including a solid catalyst
|
|
DE69942615D1
(de)
|
1998-10-23 |
2010-09-02 |
Fujifilm Electronic Materials |
Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend
|
|
TW501197B
(en)
*
|
1999-08-17 |
2002-09-01 |
Hitachi Chemical Co Ltd |
Polishing compound for chemical mechanical polishing and method for polishing substrate
|
|
CN1966548B
(zh)
*
|
1999-08-17 |
2011-03-23 |
日立化成工业株式会社 |
化学机械研磨用研磨剂及基板的研磨法
|
|
US6294072B1
(en)
|
1999-09-20 |
2001-09-25 |
Aeromet Technologies, Inc. |
Removal of metal oxide scale from metal products
|
|
JP4264781B2
(ja)
|
1999-09-20 |
2009-05-20 |
株式会社フジミインコーポレーテッド |
研磨用組成物および研磨方法
|
|
TW534917B
(en)
|
1999-11-22 |
2003-06-01 |
Jsr Corp |
Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and its method of production
|
|
US6461227B1
(en)
*
|
2000-10-17 |
2002-10-08 |
Cabot Microelectronics Corporation |
Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
|
|
US6787061B1
(en)
|
2000-11-16 |
2004-09-07 |
Intel Corporation |
Copper polish slurry for reduced interlayer dielectric erosion and method of using same
|
|
US20020104269A1
(en)
|
2001-01-26 |
2002-08-08 |
Applied Materials, Inc. |
Photochemically enhanced chemical polish
|
|
US20030017785A1
(en)
|
2001-03-02 |
2003-01-23 |
Kazumasa Ueda |
Metal polish composition and polishing method
|
|
US6783432B2
(en)
|
2001-06-04 |
2004-08-31 |
Applied Materials Inc. |
Additives for pressure sensitive polishing compositions
|
|
US6812193B2
(en)
|
2001-08-31 |
2004-11-02 |
International Business Machines Corporation |
Slurry for mechanical polishing (CMP) of metals and use thereof
|
|
US6719920B2
(en)
|
2001-11-30 |
2004-04-13 |
Intel Corporation |
Slurry for polishing a barrier layer
|
|
US6730592B2
(en)
*
|
2001-12-21 |
2004-05-04 |
Micron Technology, Inc. |
Methods for planarization of metal-containing surfaces using halogens and halide salts
|
|
US7316603B2
(en)
*
|
2002-01-22 |
2008-01-08 |
Cabot Microelectronics Corporation |
Compositions and methods for tantalum CMP
|
|
US20030168627A1
(en)
*
|
2002-02-22 |
2003-09-11 |
Singh Rajiv K. |
Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
|
|
US6821309B2
(en)
|
2002-02-22 |
2004-11-23 |
University Of Florida |
Chemical-mechanical polishing slurry for polishing of copper or silver films
|
|
US6641630B1
(en)
*
|
2002-06-06 |
2003-11-04 |
Cabot Microelectronics Corp. |
CMP compositions containing iodine and an iodine vapor-trapping agent
|
|
US7300601B2
(en)
*
|
2002-12-10 |
2007-11-27 |
Advanced Technology Materials, Inc. |
Passivative chemical mechanical polishing composition for copper film planarization
|
|
JP2004343016A
(ja)
*
|
2003-05-19 |
2004-12-02 |
Jsr Corp |
研磨パッド及び研磨方法
|
|
GB2402941B
(en)
*
|
2003-06-09 |
2007-06-27 |
Kao Corp |
Method for manufacturing substrate
|
|
US20050076580A1
(en)
*
|
2003-10-10 |
2005-04-14 |
Air Products And Chemicals, Inc. |
Polishing composition and use thereof
|
|
US20050097825A1
(en)
*
|
2003-11-06 |
2005-05-12 |
Jinru Bian |
Compositions and methods for a barrier removal
|
|
US20050104048A1
(en)
*
|
2003-11-13 |
2005-05-19 |
Thomas Terence M. |
Compositions and methods for polishing copper
|