JP5309672B2 - 薄膜素子およびその製造方法 - Google Patents

薄膜素子およびその製造方法 Download PDF

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Publication number
JP5309672B2
JP5309672B2 JP2008109998A JP2008109998A JP5309672B2 JP 5309672 B2 JP5309672 B2 JP 5309672B2 JP 2008109998 A JP2008109998 A JP 2008109998A JP 2008109998 A JP2008109998 A JP 2008109998A JP 5309672 B2 JP5309672 B2 JP 5309672B2
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insulating film
hole
film
forming
gate
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Expired - Fee Related
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JP2008109998A
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Japanese (ja)
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JP2009260166A (ja
JP2009260166A5 (enExample
Inventor
一志 保苅
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008109998A 2008-04-21 2008-04-21 薄膜素子およびその製造方法 Expired - Fee Related JP5309672B2 (ja)

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JP2008109998A JP5309672B2 (ja) 2008-04-21 2008-04-21 薄膜素子およびその製造方法

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JP2008109998A JP5309672B2 (ja) 2008-04-21 2008-04-21 薄膜素子およびその製造方法

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JP2009260166A JP2009260166A (ja) 2009-11-05
JP2009260166A5 JP2009260166A5 (enExample) 2011-01-06
JP5309672B2 true JP5309672B2 (ja) 2013-10-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109564741A (zh) * 2016-08-09 2019-04-02 株式会社半导体能源研究所 显示装置的制造方法、显示装置、显示模块及电子设备

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5483151B2 (ja) * 2009-03-05 2014-05-07 カシオ計算機株式会社 薄膜素子およびその製造方法
KR101695296B1 (ko) * 2012-12-27 2017-01-13 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그의 제조방법
KR102340066B1 (ko) * 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
US10741590B2 (en) 2016-04-12 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Peeling method and manufacturing method of flexible device
KR102378976B1 (ko) * 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
US11637009B2 (en) 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
CN111129036B (zh) * 2019-12-25 2022-07-26 Tcl华星光电技术有限公司 阵列基板及其制备方法、显示面板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3738799B2 (ja) * 1996-11-22 2006-01-25 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109564741A (zh) * 2016-08-09 2019-04-02 株式会社半导体能源研究所 显示装置的制造方法、显示装置、显示模块及电子设备
US11054687B2 (en) 2016-08-09 2021-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device, display device, display module, and electronic device

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